JPH0379319B2 - - Google Patents
Info
- Publication number
- JPH0379319B2 JPH0379319B2 JP14332382A JP14332382A JPH0379319B2 JP H0379319 B2 JPH0379319 B2 JP H0379319B2 JP 14332382 A JP14332382 A JP 14332382A JP 14332382 A JP14332382 A JP 14332382A JP H0379319 B2 JPH0379319 B2 JP H0379319B2
- Authority
- JP
- Japan
- Prior art keywords
- diameter
- crystal
- single crystal
- weight
- control
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 claims description 63
- 238000000034 method Methods 0.000 claims description 32
- 230000004044 response Effects 0.000 claims description 26
- 238000004033 diameter control Methods 0.000 claims description 15
- 238000010438 heat treatment Methods 0.000 claims description 12
- 230000008859 change Effects 0.000 claims description 11
- 150000001875 compounds Chemical class 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 9
- 239000000155 melt Substances 0.000 description 10
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910005542 GaSb Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000001444 catalytic combustion detection Methods 0.000 description 1
- 230000015271 coagulation Effects 0.000 description 1
- 238000005345 coagulation Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000005499 meniscus Effects 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
- C30B15/28—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using weight changes of the crystal or the melt, e.g. flotation methods
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14332382A JPS5935089A (ja) | 1982-08-20 | 1982-08-20 | ３−５族化合物半導体単結晶の直径制御方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14332382A JPS5935089A (ja) | 1982-08-20 | 1982-08-20 | ３−５族化合物半導体単結晶の直径制御方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5935089A JPS5935089A (ja) | 1984-02-25 |
| JPH0379319B2 true JPH0379319B2 (enrdf_load_stackoverflow) | 1991-12-18 |
Family
ID=15336110
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14332382A Granted JPS5935089A (ja) | 1982-08-20 | 1982-08-20 | ３−５族化合物半導体単結晶の直径制御方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5935089A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59184796A (ja) * | 1983-04-04 | 1984-10-20 | Agency Of Ind Science & Technol | ３−５族化合物半導体単結晶の製造方法 |
| JPS62159356A (ja) * | 1986-01-08 | 1987-07-15 | Victor Co Of Japan Ltd | 光学的情報信号再生装置 |
-
1982
- 1982-08-20 JP JP14332382A patent/JPS5935089A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5935089A (ja) | 1984-02-25 |
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