JPS5933982B2 - Lead frame manufacturing method - Google Patents
Lead frame manufacturing methodInfo
- Publication number
- JPS5933982B2 JPS5933982B2 JP8750076A JP8750076A JPS5933982B2 JP S5933982 B2 JPS5933982 B2 JP S5933982B2 JP 8750076 A JP8750076 A JP 8750076A JP 8750076 A JP8750076 A JP 8750076A JP S5933982 B2 JPS5933982 B2 JP S5933982B2
- Authority
- JP
- Japan
- Prior art keywords
- lead frame
- side edge
- frame manufacturing
- lead
- copper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Lead Frames For Integrated Circuits (AREA)
Description
【発明の詳細な説明】
本発明はリードフレームの製造方法に関し、特に帯状金
属板に半導体装置用リードフレームを連結して形成する
とき生ずる蛇行を防止することを目的とするものである
。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a lead frame, and in particular, an object of the present invention is to prevent meandering that occurs when a lead frame for a semiconductor device is connected to a band-shaped metal plate.
一例の半導体装置のパワートランジスタ、IC等の製造
において、リードフレームに素子を配設し、素子の電極
導出を施す工程がある。2. Description of the Related Art In the manufacture of semiconductor devices such as power transistors and ICs, there is a step of arranging elements on a lead frame and leading out electrodes of the elements.
上記リードフレームは銅、銅合金、鉄、鉄ニッケル合金
等でなり、パワートランジスタ、パワーIC等には銅、
銅合金が主に使用されるが、半導体装置としてのアウタ
リードの耐折曲強度の問題のため銅、銅合金条の硬度を
低くしてこれを満足させている。第1図に一例のフレー
ム状リードの1個を示し、これが十数個連接された第2
図に示す如き形状にプレスにより抜き加工が施され形成
される。このとき広幅wの側縁バー1の送り孔間の間隔
Aと、狭い幅wの側縁バー2の送り孔間の間隔BとでB
>Aとなり、Aが金型寸法に等しいのに対し、Bは数ミ
クロンないし数十ミクロン金型寸法より長くなる。この
ようにリードフレームの全長にわたり「わん曲」を生じ
、中央部で図中をにて示す長さの偏倚をみる。上記をは
実際にはリードを14個連接した長さ16cmのものに
ついて条材の硬度が−H(JIS)の場合O、05u)
硬度が−Hの場合0.3關に達する。The above lead frames are made of copper, copper alloy, iron, iron-nickel alloy, etc., and power transistors, power ICs, etc. are made of copper, copper alloy, iron, iron-nickel alloy, etc.
Copper alloys are mainly used, but due to the problem of bending strength of the outer leads as semiconductor devices, the hardness of copper and copper alloy strips is lowered to satisfy this requirement. Figure 1 shows one example of a frame-shaped lead, which is connected to a second
The shape shown in the figure is punched out using a press. At this time, the distance A between the spout holes of the side edge bar 1 with the wide width w and the distance B between the spout holes of the side edge bar 2 with the narrow width w are B.
>A, and while A is equal to the mold dimension, B is several microns to several tens of microns longer than the mold dimension. In this way, a ``curvature'' occurs over the entire length of the lead frame, and the length deviation shown in the figure is seen at the center. The above is actually 16 cm long with 14 connected leads and the hardness of the strip is -H (JIS) O, 05u)
When the hardness is -H, it reaches 0.3 degrees.
またこの傾向は条の側縁に設けられる側縁バーの幅に差
が大なるもの程著るしく、避けられない変形であり、次
に挙げる欠点がある。即ち半導体組立工程のダイボンダ
、ワイヤボンダ、エンキヤツプ、プレフオーム等の工程
での各マシンにおいてリードフレームの位置決め精度を
悪くする。Moreover, this tendency becomes more pronounced as the difference in width of the side edge bars provided on the side edges of the strip increases, and deformation is unavoidable, resulting in the following drawbacks. That is, the positioning accuracy of the lead frame is deteriorated in each machine used in the die bonder, wire bonder, encap, preform, etc. processes of the semiconductor assembly process.
このため半導体組立の歩留が大幅に低下する。本発明は
上記従来の欠点を除去するための改良されたリードフレ
ームの製造方法を提供するものである。As a result, the yield of semiconductor assembly is significantly reduced. The present invention provides an improved lead frame manufacturing method to eliminate the above-mentioned conventional drawbacks.
即ち本発明は比較的軟質の金属条にプレス加工を施しそ
の金属条の両側縁に異なる幅の側縁バーを有するリード
フレームに形成するものにおいて、広幅の側縁バーに条
体の幅方向のコイン加工を施す工程を備えたことを特徴
とする。That is, the present invention applies press working to a relatively soft metal strip to form a lead frame having side edge bars of different widths on both sides of the metal strip. It is characterized by having a process for processing coins.
次に本発明を一実施例のリードフレームの製造方法につ
き詳細に説明する。Next, the present invention will be explained in detail regarding a lead frame manufacturing method according to an embodiment.
一例のリードフレームのプレスによる抜き加工を第3図
に示す。即ち図において矢印にて示す方向に型抜きが施
される。図中密斜線を施した「抜型」 (Ila、ll
b・・・)がm/ cに設けられ、打点を施した型12
、12’、13は「押型」で12、12’はリードの一
部を曲げるため、13は第4図に断面表示する如き「コ
イン加工部」である。これはリードフレームの材質(特
に硬度−H以下)に応じ加工深さt、溝の開度θ、溝端
の径rを実験的に調節し適宜選定して用いる。このよう
にして形成されたリードフレームは第5図に示す如く「
わん曲」のないものとなる。即ちこの場合、広幅wの側
縁バ一21の送り孔間の間隔A′と、狭い幅wの側縁バ
一22の送り孔間の間隔B′とでB′二Nとなり、とも
に金型に対して数ミクロンないし数十ミクロン大である
が「わん曲」は皆無となる。この種のリードフレームは
lピツチにつき上記の程度大きくとも半導体組立上全く
問題にならないが、問題となるものについては予め金型
寸法を1ピツチにつき数ミクロンから数十ミクロン短く
製作し、コイン加工後に正規のピツチに合わせる如くす
ればよく、これも容易に達成しうる。本発明には次に挙
げる利点を備える。FIG. 3 shows an example of punching a lead frame by pressing. That is, die cutting is performed in the direction shown by the arrow in the figure. "Cutting die" with dense diagonal lines in the figure (Ila, ll
b...) is provided at m/c, and the mold 12 is dotted with dots.
, 12', and 13 are "pressing molds", and 12, 12' are for bending a part of the lead, and 13 is a "coin processing part" as shown in cross section in FIG. This is used by experimentally adjusting the machining depth t, groove opening degree θ, and groove end diameter r depending on the material of the lead frame (particularly hardness less than -H) and selecting appropriate values. The lead frame formed in this way is shown in FIG.
It becomes something without "one song". That is, in this case, the distance A' between the spout holes in the side edge bar 21 with the wide width w and the distance B' between the spout holes in the side edge bar 22 with the narrow width w are B'2N, and both of the mold The size of the particles is several microns to several tens of microns, but there are no "wand curves". For this type of lead frame, even if the pitch is as large as above, it will not cause any problem in semiconductor assembly. However, for lead frames that pose a problem, the mold dimensions should be made shorter by several microns to several tens of microns per pitch in advance, and after coin processing, All you have to do is match it to the regular pitch, and this can be easily accomplished. The present invention has the following advantages.
(1) リードフレームの材質が硬度−H質以下の軟い
銅材、銅合金材その他材の場合に「わん曲」なしで製作
できる。(1) If the material of the lead frame is a soft copper material, copper alloy material, or other material with hardness below -H quality, it can be manufactured without "curving".
(2) リードフレームが軟質材で製作できるのでこれ
を使用した半導体装置の耐足折曲強度が高い。(2) Since the lead frame can be made of a soft material, a semiconductor device using the lead frame has high bending strength.
(3)わん曲がないためダイボンダー、ワイヤボンダー
、エンキヤツプ、プレフオーム等の組立工程にて各m/
cでの位置決め精度が良好となる。(4)上項の如く位
置決め精度が良好のため各組立工程の法留が大幅に向上
する。またオートボンデイングにはわん曲等のない高精
度リードフレームを必要とするがこれに対しても充分対
処しうる。(3) Since there is no bending, each meter/
The positioning accuracy at c becomes better. (4) As mentioned above, since the positioning accuracy is good, the accuracy of each assembly process is greatly improved. Furthermore, auto bonding requires a high-precision lead frame with no curvature, but this can also be satisfactorily handled.
第1図は1のフレーム状リードの正面図、第2図は従来
のリードフレームの正面図、第3図以降は本発明にか\
り、第3図は一実施例のリードフレームのプレス加工を
説明するための図、第4図はコイン加工を説明するため
の断面図、第5図は−実施例のリードフレームの正面図
である。
13・・・コイン加工部、21・・・広幅の側縁バ一、
22・・・狭い幅の側縁バ一。FIG. 1 is a front view of a frame-shaped lead 1, FIG. 2 is a front view of a conventional lead frame, and FIG.
Fig. 3 is a diagram for explaining the press working of the lead frame of one embodiment, Fig. 4 is a sectional view for explaining the coin processing, and Fig. 5 is a front view of the lead frame of the embodiment. be. 13... Coin processing section, 21... Wide side edge bar,
22... Narrow width side edge bar.
Claims (1)
ドフレーム形成のプレス加工工程において、広幅の側縁
バーに帯体の幅方向のコイン加工部を形成することを特
徴とするリードフレームの製造方法。1. A lead frame characterized in that, in a press working process for forming a lead frame having side edge bars of different widths on both sides of a metal band, coin-processed portions in the width direction of the band are formed on wide side edge bars. Production method.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8750076A JPS5933982B2 (en) | 1976-07-22 | 1976-07-22 | Lead frame manufacturing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8750076A JPS5933982B2 (en) | 1976-07-22 | 1976-07-22 | Lead frame manufacturing method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5313358A JPS5313358A (en) | 1978-02-06 |
JPS5933982B2 true JPS5933982B2 (en) | 1984-08-20 |
Family
ID=13916688
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8750076A Expired JPS5933982B2 (en) | 1976-07-22 | 1976-07-22 | Lead frame manufacturing method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5933982B2 (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5472963A (en) * | 1977-11-24 | 1979-06-11 | Hitachi Ltd | Lead frame for semiconductor element |
JPS57210651A (en) * | 1981-06-19 | 1982-12-24 | Toshiba Corp | Lead frame and manufacture thereof |
JPS58593U (en) * | 1981-06-25 | 1983-01-05 | 松下電器産業株式会社 | speaker |
JPS5947780A (en) * | 1982-09-13 | 1984-03-17 | Toshiba Corp | Lead frame for semiconductor |
JPS60144248U (en) * | 1984-03-02 | 1985-09-25 | ロ−ム株式会社 | lead frame |
JPS60186048A (en) * | 1984-11-21 | 1985-09-21 | Hitachi Ltd | Forming method of lead frame |
-
1976
- 1976-07-22 JP JP8750076A patent/JPS5933982B2/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS5313358A (en) | 1978-02-06 |
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