JPS5932161A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5932161A JPS5932161A JP57142845A JP14284582A JPS5932161A JP S5932161 A JPS5932161 A JP S5932161A JP 57142845 A JP57142845 A JP 57142845A JP 14284582 A JP14284582 A JP 14284582A JP S5932161 A JPS5932161 A JP S5932161A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- film
- semiconductor element
- thin
- sides
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/50—Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
本発明はフィルムキャリア方式により製造され樹脂封Ｉ
Ｉ−，された半導体装置の構造に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention is manufactured by a film carrier method and is resin-sealed.
This relates to the structure of a semiconductor device.
フィルムキャリア方式とは、ポリイミド、ガラスエポキ
シ等の絶縁フィルム上にＣｕ箔をラミネートし、エツチ
ング等でリードパターン等を形成したイ・のを半導体素
子の同辺に配列された突起電極に熱圧着によるボンディ
ングを行う方式である。The film carrier method consists of laminating Cu foil on an insulating film made of polyimide, glass epoxy, etc., forming a lead pattern by etching, etc., and bonding it to protruding electrodes arranged on the same side of a semiconductor element by thermocompression. This method performs bonding.
半導体素子はボンディング後樹脂により封止される。こ
のような半導体装置の封止は、液状樹脂をポツテングし
熱硬化させたりＥベレットといわれるタブレットを半導
体素子に乗せ熱で溶かし７封由。After bonding, the semiconductor element is sealed with resin. Semiconductor devices can be sealed by potting liquid resin and curing it with heat, or by placing a tablet called an E-vellet on the semiconductor element and melting it with heat.
していた。しかし、技術的進歩により薄型化が要求され
、従来の方法で封止すると両面に盛り」−りができ薄く
できなかった。また、粘度の低い樹脂で行なうと横に広
がったシ、リードのすきまから流れ出し作業性が非常に
悪かった。Was. However, due to technological progress, thinning is required, and when sealed using the conventional method, bulges are formed on both sides, making it impossible to make thinner. Furthermore, when using resin with low viscosity, the resin spread laterally and flowed out from the gaps in the leads, resulting in very poor workability.
本発明は、従来の上記欠点を解消する構造を提供するも
のである。The present invention provides a structure that overcomes the above-mentioned drawbacks of the conventional technology.
すなわち、半導体素子の一主面にだとえ目：シト状の紫
外線硬化性樹脂を使用し、他面は従来の熱硬性樹脂を使
用する。この方法で側止された半導体装置は、両面盛り
上りやリ ドのすきまからの流れ出しを防止することが
でき、要求を満足する薄型化が可能となった。That is, a sheet-like ultraviolet curable resin is used on one main surface of the semiconductor element, and a conventional thermosetting resin is used on the other surface. Semiconductor devices side-mounted using this method can be prevented from rising on both sides and flowing out through gaps in the leads, and can be made thinner to meet the requirements.
以下、図を用いて説明する。This will be explained below using figures.
第１図は従来の構造を示す。すなわち、ポリイミド、ガ
ラスエポキシ等の絶縁フィルムＪＪ上にＣｕ （銅）箔
をラミネートし、エツチング等でリードパターン１２等
を形成したものを半導体素子１３の周辺に配列された突
起電極に熱圧着によるボンディングを行ない、ボンディ
ング後封止用樹脂１４を両面にボッティングし、熱硬化
させたりＥペレット等のタブレットを半導体素子に乗せ
熱で溶かし封止する。この様に従来から行なっている卦
１止方法では、両面盛り上り等により薄型化が非常にむ
ずかしく作業性も悪かった。FIG. 1 shows a conventional structure. That is, Cu (copper) foil is laminated on an insulating film JJ made of polyimide, glass epoxy, etc., and lead patterns 12 etc. are formed by etching, etc., and then bonded to protruding electrodes arranged around the semiconductor element 13 by thermocompression bonding. After bonding, a sealing resin 14 is bonded to both sides and cured by heat, or a tablet such as an E-pellet is placed on the semiconductor element and melted and sealed with heat. As described above, in the conventional Hexagram 1 stop method, it was very difficult to reduce the thickness due to the bulges on both sides, and the workability was also poor.
÷
そこで、本発明は第２図にの実施例を示す様に半導体素
子２３の主面にシート状の紫外線硬化性（θ１脂フィル
ノ・支持体２５を乗せ紫外線を尚て、瞬時に硬化させる
。このシート状の樹脂支持体２５はたとえば、第３図に
示すようにフィルム支持体２６」二に紫外線硬化性樹脂
２６を設けたものである。÷ Therefore, in the present invention, as shown in the embodiment shown in FIG. 2, a sheet-like ultraviolet curable (θ1 fat filler support 25) is placed on the main surface of the semiconductor element 23, and ultraviolet rays are applied to instantly cure it. This sheet-shaped resin support 25 is, for example, a film support 26'' provided with an ultraviolet curable resin 26, as shown in FIG.
尚、第２図で、２１Ｖ′Ｊ、絶縁フィルム、２２は金属
リード、２４は中１止樹脂である。In FIG. 2, 21V'J is an insulating film, 22 is a metal lead, and 24 is a stopper resin.
この際使用する薄いシート状の紫外線硬化性フィルムは
、熱可朔性又は熱硬化性の薄い支持樹脂フィルム（厚さ
４〜１０ミクロン）である塩化ビニールやポリエステル
やエポキシやポリイミドフィルム２６上に、紫外線硬化
樹脂２７を薄く塗布して得たものである。この紫外線硬
化樹脂は、エボギシ系でもシリコーン系でもポリエステ
ル系でもよく、前記支持樹脂フィルム上に薄く塗布出来
ていれば使用上問題ない。The thin sheet-like ultraviolet curable film used at this time is placed on a thermoplastic or thermosetting thin support resin film (4 to 10 microns thick) of vinyl chloride, polyester, epoxy, or polyimide film 26. It was obtained by applying a thin layer of ultraviolet curing resin 27. This ultraviolet curable resin may be an epoxy type, a silicone type, or a polyester type, and there is no problem in use as long as it can be applied thinly onto the support resin film.
との他に支持フィルムとしては、薄いアルミナ・膜やガ
ラス膜でもよいことは明らかであるがこれまでに述べた
例は、すべて支持フィルトを通して紫外線を照射するも
のであるが、紫外線硬化樹脂側から照射してもよく、そ
の際には支持フィルムは、紫外線透過タイプでない薄い
金属板や化成膜付きの金属板でもよい。It is clear that a thin alumina film or glass film can also be used as the supporting film. In all of the examples described so far, ultraviolet rays are irradiated through the supporting filter, but The support film may be a thin metal plate that does not transmit ultraviolet rays or a metal plate coated with a chemically formed film.
以上のような形態のフィルムを使用して半導体素子の主
面上を支持した後に該半導体素子の裏面である他面に、
粘度の低い熱硬化性樹脂（２４）をボッティングし硬化
する。この方法で封止された半導体装置は、両面盛り上
りやリードのすきまからの樹脂の流れ出し等を防止する
こともでき、要求されている薄型化が可能となった。After supporting the main surface of the semiconductor element using the above-described film, on the other surface, which is the back surface of the semiconductor element,
A thermosetting resin (24) with low viscosity is potted and cured. Semiconductor devices sealed by this method can also be prevented from swelling on both sides and from flowing out of resin from gaps between leads, and can be made thinner as required.
第１図は従来の半導体装置を示す断面構造である。第２
図は本発明の実施例を示す断面構造であり、第３図は紫
外線硬化性樹脂フィルム支持体の拡大断面図である
１１．２１・・・・・・絶縁フィルム、１２．２２・・
・・・・金属リード、１３．２３・・・・・・半導体素
子、１４゜２４・・・・・・封止用樹脂、２５・・・・
・・紫外線硬化性樹脂シイルム支持体、２６・・・・・
・フィルム支持体、２７・・・・・・紫外線硬化性樹脂
。
代理人 弁理士 内 原 晋１ ハ、＋：：、
ノ
７FIG. 1 is a cross-sectional structure showing a conventional semiconductor device. Second
The figure shows a cross-sectional structure showing an example of the present invention, and FIG. 3 is an enlarged cross-sectional view of an ultraviolet curable resin film support.
...Metal lead, 13.23...Semiconductor element, 14°24...Sealing resin, 25...
...Ultraviolet curable resin film support, 26...
- Film support, 27... UV curable resin. Agent Patent Attorney Susumu Uchihara 1 Ha, +::,
No.7
Claims (1)
体装置において、−主面に紫外線硬化性樹脂を用い、他
の面には熱硬化性樹脂により樹脂封止されたことを特徴
とする半導体装置。A semiconductor device of a film carrier type in which a semiconductor element is sealed with a resin, characterized in that: - a main surface is made of an ultraviolet curable resin, and the other surfaces are resin-sealed with a thermosetting resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57142845A JPS5932161A (en) | 1982-08-18 | 1982-08-18 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57142845A JPS5932161A (en) | 1982-08-18 | 1982-08-18 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5932161A true JPS5932161A (en) | 1984-02-21 |
Family
ID=15324945
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57142845A Pending JPS5932161A (en) | 1982-08-18 | 1982-08-18 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5932161A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4850105A (en) * | 1987-07-04 | 1989-07-25 | Horiba, Ltd. | Method of taking out lead of semiconductor tip part |
| US5518957A (en) * | 1991-10-10 | 1996-05-21 | Samsung Electronics Co., Ltd. | Method for making a thin profile semiconductor package |
-
1982
- 1982-08-18 JP JP57142845A patent/JPS5932161A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4850105A (en) * | 1987-07-04 | 1989-07-25 | Horiba, Ltd. | Method of taking out lead of semiconductor tip part |
| US5518957A (en) * | 1991-10-10 | 1996-05-21 | Samsung Electronics Co., Ltd. | Method for making a thin profile semiconductor package |
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