JP2003249509A - Method for sealing semiconductor and sealed semiconductor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To seal a semiconductor having a very small thickness by attaining superior heat resistance, water resistance, electrical insulation property, chemical resistance, and physical strength, and reducing the thickness after sealing. <P>SOLUTION: A sealing member 3A obtained by coating an epoxy resin 32 that serves as an adhesive on a thin polyimide resin sheet 31, is laid over a semiconductor 2 which is mounted on a substrate 1, so that the whole surface of the semiconductor 2 is covered therewith, and that the side of the epoxy resin 32 faces the surface of the semiconductor 2. Thereafter, the epoxy resin 32 is softened by heating and pressing from the side of the polyimide resin sheet 31 and permitted to have appropriate viscosity and adherence. The epoxy resin 32, having viscosity and adherence, is then bonded to the semiconductor 2 and the substrate 1, thereby sealing the semiconductor 2, while allowing the softened resin material and the polyimide resin sheet 31 to cure after completion of the heat treatment. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor encapsulation method for encapsulating a semiconductor such as a semiconductor chip mounted on a substrate surface and the encapsulated semiconductor.

[0002]

2. Description of the Related Art As a method of sealing a semiconductor such as a semiconductor chip, many methods of sealing a semiconductor with a resin have been proposed and put into practical use. The most widely used method is potting, which drops resin, and sometimes,
A molding method using a mold is also adopted. Further, recently, a method using a sheet-shaped resin or the like has been proposed.

As a method of using a sheet-shaped resin, for example, a technique described in Japanese Patent Application Laid-Open No. 9-129659 (hereinafter referred to as a first conventional technology) is known. The technology described in Japanese Patent No. 257662 (hereinafter referred to as the second conventional technology) and the like are known. Further, as a technique for sealing a semiconductor of a mold system, a technique described in Japanese Patent Laid-Open No. 2001-44222 (hereinafter referred to as a third conventional technique) and the like are known.

The first conventional technique is to provide a resin-sealed semiconductor device in which no internal void is generated by projecting at least the central portion of one surface of a sheet-shaped resin for semiconductor encapsulation. . The second conventional technique is to integrally form at least one layer of glass woven prepreg impregnated with a thermosetting resin on the upper and lower parts of a semiconductor to integrally mold the prepreg, thereby eliminating resin cracks, moisture resistance and reliability. It is intended to raise Also, the third
The prior art is a compression molding apparatus that seals the entire surface of a wafer having a plurality of posts serving as embedded electrodes on one surface with a molding resin, and the thickness of the resin varies depending on the height of the posts of the wafer. Its main purpose is to prevent variations.

[0005]

DISCLOSURE OF THE INVENTION Problems to be Solved by the Invention
Although the conventional technology of (1) has been specially devised in order to achieve each purpose, since the types of semiconductors in recent years are diverse and miniaturization (especially thinness) is progressing, There is a need for a stopping method that can be made thinner.

For example, in order to seal a semiconductor having an extremely thin thickness of several μm to several tens of μm,
The thickness after sealing is also required to be as thin as possible. In addition, even when many semiconductors are mounted in a large mounting area on one board, it is required to collectively seal all semiconductors with the thickness after sealing as small as possible. To be done. Moreover, water resistance, heat resistance,
It is also an important issue that the electrical insulation is excellent, and the chemical resistance and the physical strength are also excellent.

However, such demands and problems cannot be met by the above-mentioned respective prior arts. That is, in the first prior art, since the central portion of the sheet-shaped resin is formed to project, the entire thickness is inevitably increased. Further, in the second conventional technique, the glass prepreg or the like having powdered silica is distributed to the upper and lower portions of the semiconductor chip for integral molding, so that the entire structure is inevitably thick. Further, in the third conventional technique, the post is provided so as to penetrate the mold resin portion, and since the resin is formed into a predetermined shape by the mold, the thickness after sealing is still a certain thickness. It becomes a problem.

Therefore, the present invention aims to provide a semiconductor encapsulation method most suitable for encapsulating a semiconductor having an extremely small thickness, and not only to reduce the encapsulation thickness but also to improve water resistance and heat resistance. It is an object of the present invention to provide a semiconductor encapsulation method and an encapsulated semiconductor which are excellent in electrical insulation and are also excellent in chemical resistance and physical strength.

[0009]

In order to achieve such an object, a semiconductor encapsulation method of the present invention covers a semiconductor mounted on a substrate surface with an encapsulating material and then heats the encapsulating material. A semiconductor encapsulation method for encapsulating the semiconductor by
The encapsulating material is a thin plate-like sheet made of a thermosetting resin, to which a resin material serving as an adhesive is applied, and the encapsulating material serves as an adhesive on the resin material side of the substrate. After covering the entire surface of the semiconductor so as to face the mounted semiconductor, heating from the thin sheet side softens the resin material that functions as an adhesive to give viscosity and adhesive force. In this way, the resin material having the viscosity and the adhesiveness is adhered to the semiconductor and the substrate surface, and the resin material softened after the heat treatment and the thin sheet sheet are cured to seal the semiconductor. .

Thus, the semiconductor can be hermetically sealed on the substrate surface by the sealing material. That is,
Since the resin material serving as an adhesive has a suitable viscosity and adhesiveness by being heated, it is possible to wrap the entire surface of the semiconductor exposed on the substrate surface without a gap, It is possible to obtain a sealed state that is excellent in water resistance, heat resistance, and electrical insulation, and is also excellent in chemical resistance and physical strength. Moreover, since the entire surface thereof is covered with the thin sheet, each characteristic can be further improved and physical strength can be obtained.

The thermosetting resin used for the thin sheet is preferably a polyimide resin. This makes it excellent in water resistance, heat resistance, and electrical insulation, and further,
It also has excellent chemical resistance and physical strength.

Further, the resin which serves as an adhesive is
It is preferably an epoxy resin. When this epoxy resin is heated at an appropriate temperature, it has appropriate viscosity and tackiness. The moderate viscosity here means a moderately softened state in which the fluidity is not very high, which can prevent problems such as the resin material protruding outside the range to be sealed, and end the heat treatment. After that, it can be cured in a short time (about several seconds), and productivity can be improved. In addition, since the adhesiveness is appropriate, the adhesiveness becomes excellent, whereby the reliable sealed state can be maintained for a long period of time. Also,
Epoxy resin has a property that it is difficult for sodium to pass therethrough, and thus is suitable for encapsulation of semiconductors that do not like salt.

The semiconductor to be sealed is a thin semiconductor having a thickness of 5 μm or more and 50 μm or less,
The thin sheet has a thickness of 0.5 of the semiconductor thickness.
It is preferably not less than twice and not more than twice.

Thus, when the thickness is 5 μm or more, it is 50 μm.
When the following semiconductors are used as the main encapsulation material, the use of the sheet-shaped encapsulating material enables easy and reliable encapsulation, and the use of the sheet-shaped encapsulating material is preferable. Moreover, since the thickness of the thin sheet is not less than 0.5 times and not more than twice the thickness of the semiconductor, the thickness from the substrate surface to the surface of the thin sheet after the sealing treatment includes the resin material as an adhesive. However, it is possible to keep the thickness extremely thin, and it is possible to perform sealing with a very small thickness as a whole and also to perform sufficient sealing in terms of strength.

Further, in another invention, in addition to the semiconductor encapsulation method of each of the above inventions, the semiconductor to be encapsulated is a plurality of semiconductors arranged on the substrate surface with a certain interval. After collectively covering all of these semiconductors with an encapsulant, heat the thin sheet from the sheet side to soften the resin material that functions as an adhesive to increase the viscosity. The resin material having the viscosity and the adhesiveness is adhered to the respective semiconductors and the substrate surface in the mounting area of each of the semiconductors by giving the adhesive force to the resin material and the thin plate softened after the heat treatment. By curing the sheet-like sheet, the plurality of semiconductors are entirely sealed.

As described above, even when a large number of semiconductors are mounted in a wide mounting area on one substrate, all the semiconductor groups in the mounting area are collectively sealed. In addition, the thickness after sealing can be made extremely thin. Further, in the case of mounting a large number of semiconductors on a substrate, the substrate may be cut and used for each predetermined portion after the sealing treatment. In such a case, according to the present invention, Since the cut surface is in a state of being sealed with the cured resin material and the thin plate-like sheet, the individual semiconductors are not exposed and the sealed state of each semiconductor can be appropriately maintained.

Further, the sealed semiconductor of the present invention comprises a semiconductor mounted on the surface of a substrate, a resin material serving as an adhesive for covering the semiconductor, and a thermosetting resin covering the resin material. And a thin sheet.

Since the semiconductor is covered with a resin material in a portion exposed on the surface of the substrate without any gaps and further covered with a thin sheet of thermosetting resin, it has water resistance, heat resistance and electrical insulation. In addition, it is possible to obtain an excellent sealed state in terms of chemical resistance and physical strength.
In addition, it is possible to reduce the thickness by utilizing the seat.

[0019]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the semiconductor encapsulation method and the encapsulated semiconductor according to the present invention will be described below with reference to the drawings.

First, as a first embodiment of the semiconductor encapsulation method of the present invention, the case of encapsulating one semiconductor mounted on a substrate will be described with reference to FIGS.

FIG. 1A is a perspective view showing a state in which a semiconductor 2 such as a semiconductor chip is mounted on a substrate 1 such as a multi-layer substrate, and FIG. 1B is a line AA of FIG. FIG. The semiconductor 2 used here is an extremely thin semiconductor having a thickness t0 of about 5 μm to 50 μm in this example. 2 (A) is a perspective view showing a sealing material tape 3 for sealing the semiconductor 2, and FIG. 2 (B) shows the sealing material tape 3 with a predetermined length along its longitudinal direction. FIG. 3 is a side cross-sectional view of a product cut out in FIG.

This encapsulant tape 3 has heat resistance, water resistance,
Thermosetting resin (polyimide resin) with excellent electrical insulation properties and chemical resistance and physical strength
And the epoxy resin 32 serving as an adhesive applied to the entire back surface of the thin plate-like sheet 31.
The carrier 3 covers the entire surface of the epoxy resin 32.
3 is peelably attached. In this embodiment, since a polyimide resin is used as the thermosetting resin, the thin plate sheet 31 will be referred to as a polyimide resin sheet 31 below.

The encapsulating material tape 3 is in the form of a long strip having a predetermined width, and the length and the width can be cut to a required size according to the size of the object to be sealed and used. It has become. The polyimide resin sheet 31 and the epoxy resin 32 forming the sealing material tape 3 are the sealing material 3A.
Is formed.

The thickness t1 of the polyimide resin 31 is
In this embodiment, the thickness is approximately equal to the thickness of the semiconductor 2. For example, the thickness t0 of the semiconductor 2 is 10 μm
Then, the thickness t1 of the polyimide resin 31 may be about 10 μm.

The thickness t of the polyimide resin sheet 31 is
1 is not limited to this, and may have a thickness that is substantially equal to or slightly greater than the thickness of the semiconductor 2, but it is preferable not to increase the thickness too much. As an example, in terms of the relationship with the thickness t0 of the semiconductor 2, it is desirable that the thickness t0 of the semiconductor 2 is from 0.5 times to at most about twice.

In this way, the thickness of the semiconductor 2 should be suppressed to about twice the thickness t0 of the semiconductor 2 as a whole after the encapsulation process shown in FIG. 3B (from the surface of the substrate 1 to the surface of the encapsulant 3A). This is because it is desirable to suppress the thickness t3) to the surface of the polyimide resin sheet 31 as much as possible. Further, the thickness t1 of the polyimide resin sheet 31 is set to 0.5 times or more the thickness t0 of the semiconductor 2 because the semiconductor 2 usually has sharply protruding corners at the upper four corners. This is because 0.5 times or more of the thickness t0 of the semiconductor 2 is required to prevent the polyimide resin sheet 31 from being broken by the portion. In addition, the thickness t2 of the epoxy resin 32
Is preferably about 5 μm to 10 μm.

When the semiconductor 2 is sealed with such a sealing tape 3, the carrier 33 is first peeled from the epoxy resin 32. After that, as shown in FIG. 3A, the epoxy resin 32 side is opposed to the semiconductor 2 from above the semiconductor 2, and a sealing material 3A is covered so as to cover the semiconductor 2. After that, the semiconductor 2 is sealed by applying some pressure while appropriately heating with a hot plate (not shown) or the like.

The heating temperature at this time is the epoxy resin 32.
The temperature is set to a level at which is softened moderately and appropriate viscosity and tackiness are obtained. This is because the epoxy resin 32 has a property that the viscosity does not increase so much even when heated, but if the temperature is increased too much, even if the epoxy resin 32 is used, the viscosity becomes low to some extent and softened. This is because problems such as the epoxy resin 32 sticking out of the sealing range and that it takes too much time for the epoxy resin 32 to cure after the heat treatment is completed occur.

The reason why the epoxy resin 32 is used as the adhesive is that the epoxy resin 32 has excellent water resistance and electrical insulating properties, and also has a chemical property that it is difficult for sodium to pass through. In particular, since the semiconductor 2 generally dislikes the attachment of salt, it is effective that it is difficult for sodium to pass through.

Further, the epoxy resin 32 can obtain an appropriate viscosity and adhesive force when heated at an appropriate temperature. By obtaining an appropriate viscosity, it is possible to wrap the entire semiconductor 2 mounted on the substrate 1 with no space between them, and further, after the heat treatment is completed, the time for curing is extremely short (about several seconds). be able to. Further, by obtaining an appropriate adhesive force, the adhesiveness to the semiconductor 2 and the substrate 1 becomes excellent.

FIG. 3B shows a state in which the semiconductor 2 is thus sealed. The semiconductor 2 is hermetically sealed on the substrate 1 by the sealing material 3A. That is, the epoxy resin 32, which serves as an adhesive, is heated to be in a state of having an appropriate viscosity and an adhesive force, so that the entire surface of the semiconductor 2 exposed on the substrate 1 can be formed without a gap. It will be wrapped up. Then, after the heat treatment is completed, the epoxy resin 32 is immediately cured, so that the entire surface of the semiconductor exposed on the substrate 1 is encapsulated in the epoxy resin 32, and further, the entire surface thereof. Is covered with the polyimide resin sheet 31.

By sealing the semiconductor 2 using the semiconductor sealing method described above, water resistance, heat resistance, and
It is possible to obtain a sealed state that is excellent in electrical insulation and is also excellent in chemical resistance and physical strength. Moreover, the thickness t1 of the polyimide resin sheet 31 is 0.5 times or more the thickness t0 of the semiconductor 2 to about 2 times at the maximum, that is, assuming that the thickness t0 of the semiconductor 2 is about 10 μm, the polyimide resin sheet 31 will be described. Since the thickness t1 of 31 is about 5 μm to about 20 μm at the most, the thickness t3 (see FIG. 3B) from the substrate 1 to the surface of the polyimide resin sheet 31 after the sealing process is the epoxy resin 32 as an adhesive. Even if the thickness of the
Therefore, it is possible to perform sealing with a very thin thickness as a whole.

As described above, the semiconductor sealing method of the first embodiment is particularly effective when the thickness of the semiconductor 2 to be sealed is small, and the thickness t0 of the semiconductor 2 is 5 μm to 50 μm. It can be said that it is effective for sealing up to a certain degree, and is particularly effective for the semiconductor 2 having a thickness of 5 to 30 μm.

Although the above description is about the method of sealing one semiconductor 2 mounted on the substrate 1, the substrate 1
A large number of semiconductors 2 mounted on top can be sealed by the same method as described above.
The embodiment will be described below.

FIG. 4A is a perspective view showing a state in which a large number of semiconductors 2 are mounted on a single substrate 1 with a predetermined gap between the semiconductors, and FIG. , (A) is a sectional view taken along the line AA of FIG. Similarly to the first embodiment, the semiconductor 2 used here has a thickness t0 of 5 μm or more.
It is assumed that the semiconductor is an extremely thin semiconductor with a thickness of about 50 μm.

Since it is necessary to mount a large number of semiconductors 2 on one substrate 1, a mounting area 20 for a large number of semiconductors 2 on the substrate 1 (within the range shown by the broken line in FIG. 4A). Is, for example, the length in the vertical direction × the length in the horizontal direction is 100 mm × 200 mm or 50 mm × 150 mm
As described above, a relatively large area is required. However, when sealing the entire mounting area 20 having such a large area,
This can be performed in the same manner as the above-mentioned first embodiment.

The semiconductor sealing method according to the second embodiment will be described with reference to FIG. The sealing material tape 3 used in the second embodiment has the same structure as that shown in FIG.
Polyimide resin sheet 3 constituting this sealing material tape 3
The thickness t1 of 1 and the like have the same relationship with the thickness t0 of the semiconductor 2 as described in the first embodiment. However, the sealing material tape 3 used in the second embodiment has a mounting area 20 as shown in FIG.
Use a size that can cover the whole.

First, the carrier 33 attached to the epoxy resin 32 is peeled off to form the sealing material 3A. afterwards,
As shown in FIG. 5A, after covering a large number of semiconductors 2 so that the epoxy resin 32 side faces the surface of the semiconductors 2 so as to cover all the semiconductors 2 collectively,
All the semiconductors 2 are sealed by applying a slight pressure while appropriately heating with a hot plate (not shown) or the like.

FIG. 5B shows a state of being sealed in this way. Each semiconductor 2 mounted on the substrate 1 is hermetically sealed on the substrate 1 by the sealing material 3. To be done. That is, the epoxy resin 32, which serves as an adhesive, is heated to be in a state of having appropriate viscosity and adhesiveness, so that all the semiconductors 2 mounted on the substrate 1 are individually separated. Since the semiconductor 2 is wrapped around each semiconductor 2, each semiconductor 2 has its own epoxy resin 3.
It becomes a sealed state at 2.

After the heat treatment is completed, the epoxy resin 32 is hardened immediately, so that all the semiconductors 2 are
Is sealed with an epoxy resin 32, and the entire surface thereof is covered with a polyimide resin sheet 31.

By encapsulating the semiconductor 2 by using the semiconductor encapsulation method as described above, as in the case where the number of the semiconductor 2 is one as described in the above-mentioned first embodiment,
It is possible to obtain a sealed state that is excellent in water resistance, heat resistance, electrical insulation, chemical resistance, and physical strength. Moreover,
The thickness of the polyimide resin sheet 31 is the semiconductor thickness t0.
Half or slightly thicker than the thickness t0, that is, if the thickness t0 of the semiconductor 2 is about 10 μm, the thickness of the polyimide resin sheet 31 is about 5 μm to at most about 20 μm. Thickness t3 from the substrate 1 to the surface of the polyimide resin sheet 31
(See FIG. 5B) shows an epoxy resin 32 as an adhesive.
Including the above, the maximum thickness can be suppressed to several tens of μm, and extremely thin sealing can be performed as a whole.

When a large number of semiconductors 2 are mounted on the substrate 1 as in the second embodiment, the semiconductors 2 are mounted and sealed, and then the substrate 1 is cut into predetermined parts. Sometimes used. In FIG. 5, for example,
Considering the case of cutting off at the portion of broken line x1, it is necessary that the cut portion also surely keeps the sealed state.

In the present embodiment, this point is also taken into consideration. That is, when the substrate is cut along the broken line x1 in FIG. 5B, the substrate 1 after the cutting is divided into two substrates 11 and 12 as shown in FIG. At this time, since the cut surfaces 11a and 12a of the two substrates 11 and 12 are sealed with the hardened epoxy resin 32, the semiconductor 2 is not exposed and the semiconductors 2 are not exposed. The sealed state of is properly maintained.

The above-described embodiments are examples of preferred embodiments of the present invention, but the present invention is not limited to these, and various modifications can be made without departing from the gist of the present invention. Is. For example, in each of the above-described embodiments, a polyimide resin made of a thermosetting resin is used as the thin sheet 31, but the thin sheet 31 is not limited to the polyimide resin, and in short, heat resistance, water resistance, and electrical resistance. Any resin material can be used as long as it can be formed into a thin sheet having excellent insulation properties, chemical resistance and physical strength, and having the same thickness and strength as the polyimide resin sheet 31 described above. As an example, it is possible to use polyethylene terephthalate or the like.

In the above embodiment, the sealing material tape 3 has a three-layer structure having the carrier 33, but only the adhesive material such as the epoxy resin 32 is used as the carrier 33.
The adhesive tape is attached to the semiconductor 2, the adhesive tape is attached on the semiconductor 2, and only the carrier 33 is peeled off to place the epoxy resin 32 or the like serving as the adhesive on the semiconductor 2.
After that, the thin sheet 31 may be attached onto the adhesive. In this case, the subsequent heat treatment and the like are similar to those in the above embodiment.

[0046]

As described above, the semiconductor encapsulation method of the present invention is most suitable for encapsulating a semiconductor having a very small thickness, and not only makes the encapsulation thin,
It is possible to provide a semiconductor encapsulation method excellent in water resistance, heat resistance, electrical insulation, chemical resistance, and physical strength.

According to the semiconductor encapsulation method of another invention, even if a large number of semiconductors are mounted in a wide mounting area on one substrate, all the semiconductors in the mounting area are mounted. It is possible to seal the semiconductor groups as a group, and the thickness after the sealing can be made extremely thin. Further, in this way, in the case of mounting a large number of semiconductors on a substrate, the substrate may be cut and used for each predetermined portion after the sealing process. In such a case, the cut surface after the cutting is Since the cured resin material and the thin plate-shaped sheet are sealed, the individual semiconductors are not exposed and the sealed state of each semiconductor can be appropriately maintained.

Further, the encapsulated semiconductor of the present invention can be made thin and is excellent in water resistance, heat resistance, electrical insulation, chemical resistance and physical strength.

[Brief description of drawings]

FIG. 1 is a diagram showing a mounting state of a semiconductor as a sealing target used in a first embodiment of a semiconductor sealing method of the present invention on a substrate, where (A) is a perspective view and (B) is a perspective view.
FIG. 7A is a sectional view taken along the line AA of (A).

FIG. 2 is a diagram illustrating a configuration of a sealing material used in the semiconductor sealing method according to each embodiment of the present invention, (A) is a perspective view, and (B) is a side sectional view.

FIG. 3 is a diagram illustrating a sealing step of the first embodiment of the semiconductor sealing method of the present invention, FIG. 3A is a diagram showing a state in which a semiconductor is covered with a sealing material. , (B) is (A)
It is a figure which shows the state which heat-processed from the state of FIG.

FIG. 4 is a diagram showing a mounting state of a large number of semiconductors to be sealed, which are used in the second embodiment of the semiconductor sealing method of the present invention, on a substrate, and FIG.
(B) is a sectional view taken along the line AA of (A).

FIG. 5 is a diagram illustrating a sealing step of the second embodiment of the semiconductor sealing method of the present invention, in which (A) shows a state in which a large number of semiconductors are covered with a sealing material. In the figure, (B) is a diagram showing a state where heat treatment is performed from the state of (A), and a diagram showing a sealed semiconductor.

6 is a diagram showing a state in which the substrate is cut at a predetermined position in the sealing process state shown in FIG. 5 (B).

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 substrate 2 semiconductor 3 sealing material tape 3A sealing material 31 polyimide resin sheet (thin sheet) 32 epoxy resin (resin material serving as an adhesive) 33 carrier 20 semiconductor mounting areas 11 and 12 cut substrates 11a Cut Surface of Substrate 11 Cut 12a Cut Surface of Cut Substrate 12

Claims (6)

[Claims] 1. A semiconductor encapsulation method for encapsulating a semiconductor mounted on a substrate surface with a sealing material and then heating the sealing material to seal the semiconductor. Is a thin sheet made of a thermosetting resin coated with a resin material that functions as an adhesive, and the resin material side that functions as an adhesive for this sealing material is mounted on the substrate. After covering the entire surface of the semiconductor so as to face the semiconductor, it is heated from the side of the thin sheet to soften the resin material serving as the adhesive so that it has a viscosity and an adhesive force. By allowing the resin material having the viscosity and the adhesiveness to adhere to the semiconductor and the substrate surface, the softened resin material and the thin sheet sheet are cured after the heat treatment to seal the semiconductor. A method for encapsulating a semiconductor, comprising: 2. The method for encapsulating a semiconductor according to claim 1, wherein the thermosetting resin used for the thin sheet is a polyimide resin. 3. The resin serving as the adhesive is
It is an epoxy resin, It is characterized by the above-mentioned.
The semiconductor encapsulation method described. 4. The semiconductor to be sealed is a thin semiconductor having a thickness of 5 μm or more and 50 μm or less,
4. The semiconductor encapsulation method according to claim 1, wherein the thin sheet has a thickness of 0.5 times or more and 2 times or less the thickness of the semiconductor. 5. The semiconductor to be sealed is a plurality of semiconductors arranged on the surface of the substrate with a certain interval, and the plurality of semiconductors are grouped together to form the plurality of semiconductors. After covering with a sealing material, heating from the side of the thin plate sheet to soften the resin material serving as the adhesive to give viscosity and adhesive force, and thereby the viscosity and adhesiveness By bonding the resin material having the respective semiconductors and the substrate surface in the mounting region of each of the semiconductors, the softened resin and the thin plate-like sheet are cured after the heat treatment, whereby the plurality of semiconductors The semiconductor encapsulation method according to claim 1, wherein the whole is encapsulated. 6. A sealing comprising a semiconductor mounted on a substrate surface, a resin material serving as an adhesive for covering the semiconductor, and a thin plate-like sheet made of a thermosetting resin for covering the resin material. Semiconductors.