JP4408015B2 - Manufacturing method of semiconductor device - Google Patents

Manufacturing method of semiconductor device Download PDF

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JP4408015B2
JP4408015B2 JP2002316076A JP2002316076A JP4408015B2 JP 4408015 B2 JP4408015 B2 JP 4408015B2 JP 2002316076 A JP2002316076 A JP 2002316076A JP 2002316076 A JP2002316076 A JP 2002316076A JP 4408015 B2 JP4408015 B2 JP 4408015B2
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Prior art keywords
resin layer
semiconductor element
semiconductor device
filling resin
semi
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JP2004152983A (en
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雅光 生雲
哲也 藤沢
光孝 佐藤
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Fujitsu Semiconductor Ltd
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Fujitsu Semiconductor Ltd
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Priority to JP2002316076A priority Critical patent/JP4408015B2/en
Priority to CN03104458A priority patent/CN1463038A/en
Priority to EP14193115.4A priority patent/EP2866258B1/en
Priority to EP03253279A priority patent/EP1367645A3/en
Priority to TW092114595A priority patent/TWI234253B/en
Priority to CNB03138174XA priority patent/CN100435334C/en
Priority to KR1020030034580A priority patent/KR100907232B1/en
Priority to US10/448,444 priority patent/US6836025B2/en
Publication of JP2004152983A publication Critical patent/JP2004152983A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/19—Manufacturing methods of high density interconnect preforms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/12105—Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/19—Manufacturing methods of high density interconnect preforms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73267—Layer and HDI connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92222—Sequential connecting processes the first connecting process involving a bump connector
    • H01L2224/92224—Sequential connecting processes the first connecting process involving a bump connector the second connecting process involving a build-up interconnect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
    • H01L2924/15155—Shape the die mounting substrate comprising a recess for hosting the device the shape of the recess being other than a cuboid

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device wherein a resin filling layer is in close contact with the side face of a semiconductor element, and also to provide a method of manufacturing the same. <P>SOLUTION: The semiconductor element 2 is mounted on a substrate 1, and the resin filling layer 4 is formed around the semiconductor element 2. The resin filling layer 4 is semi-cured resin having such a property that, when heated in a semi-cured state, it is softened and liquidated. By heating the resin filling layer 4 in a semi-cured state, a space between the resin filling layer 4 and the semiconductor element 2 is filled with the liquidated resin filling layer 4. <P>COPYRIGHT: (C)2004,JPO

Description

【０００１】
【発明の属する技術分野】
本発明は半導体装置に係り、より詳細には半導体素子の周囲に樹脂層が設けられた半導体装置及びその製造方法に関る。
【０００２】
【従来の技術】
基板上に半導体素子を搭載して形成する半導体装置では、一般的に半導体素子の周囲を樹脂で覆うことにより、半導体素子を確実に基板に固定する。またマルチチップモジュール等のように基板上に複数の半導体素子が搭載される場合、半導体素子の間に樹脂が充填される。この充填樹脂層により各半導体素子は確実に基板へ固定され、また、半導体素子間が確実に絶縁される。
【０００３】
充填樹脂層は、半導体素子を基板に搭載する前に予め形成しておくこともでき、また、半導体素子を基板に搭載した後に充填することもできる。
【０００４】
【特許文献１】
特開２００２−１１０７１４号公報
【０００５】
【発明が解決しようとする課題】
上述の充填樹脂層を半導体素子の搭載前に予め形成しておく場合、基板上に形成された充填樹脂層の一部を除去して基板の表面が露出した開口を形成し、この開口に半導体素子を配置して搭載する。したがって、開口は半導体素子よりも僅かに大きい寸法で形成されるため、開口の内壁と半導体素子の側面との間に間隙が形成される。
【０００６】
また、充填樹脂層を半導体素子の搭載後に形成する場合、例えば、半導体素子をマスキングして基板上に樹脂を印刷塗布し、塗布した樹脂硬化させるといった方法がある。この場合でも、充填樹脂層を半導体素子の側面に密着させることは難しく、充填樹脂層と半導体素子の側面との間に間隙が形成される。
【０００７】
上述のように、半導体素子側面と充填樹脂層との間に隙間が形成されると、充填樹脂による半導体素子の固定効果を得ることができない。また、この間隙は、半導体素子と充填樹脂層の上での配線形成の妨げとなる。半導体素子及び充填樹脂層の上に樹脂絶縁層をもうける場合、樹脂絶縁層の形成段階で、樹脂絶縁層の一部が隙間に入り込むことで、この隙間が充填されるが、隙間を完全に充填することはできない。
【０００８】
本発明は上記の点に鑑みてなされたものであり、充填樹脂層が半導体素子の側面に密着した半導体装置の製造方法を提供することを目的とする。
【０００９】
【課題を解決するための手段】
上記の課題を解決するために本発明によれば、回路形成面が基板と反対方向に向いた半導体素子が間に配置された半硬化状態の充填樹脂層を該基板上に形成し、該半硬化状態の充填樹脂層を加熱して流動化させ、前記半導体素子と前記充填樹脂層の間の間隙に前記充填樹脂層を流動させて間隙をなくし、前記充填樹脂層を加熱して完全に硬化させることを特徴とする半導体装置の製造方法が提供される。
【００１１】
上述の発明によれば、充填樹脂層の材料として半硬化性樹脂を用いることにより、半導体素子と充填樹脂層との間の間隙を、軟化した半硬化性樹脂で充填することができ、半導体素子と充填樹脂層との間に間隙がない半導体装置を容易に製造することができる。
【００１２】
また、本発明によれば、開口を有する充填樹脂層を基板上に形成し、且つ半硬化性樹脂よりなる接着剤が設けられた半導体素子を準備し、該開口に前記半導体素子を配置し、半硬化状態における前記接着剤を加熱して流動化させながら、前記半導体素子を前記接着剤を介して前記基板に対して押圧し、前記半導体素子の上面が前記充填樹脂層の上面と同一面となる位置で前記半導体素子を維持しながら、前記接着剤を加熱し硬化させることを特徴とする半導体装置の製造方法が提供される。
【００１３】
上述の発明によれば、半導体素子と充填樹脂層との間の間隙を接着剤により充填することができ、且つ半導体素子の上面と充填樹脂層の上面とを精度よく同一平面とすることができる。また、接着剤間隙を充填することができるような量が塗布され、半導体素子による押圧力により間隙を充填していくので、接着材は基板と完全に密着し、接着剤の濡れ不足や這い上がり現象が防止される。
【発明の実施の形態】
次に、本発明の実施の形態について図面と共に説明する。
【００１４】
図１は本発明の第１実施例による半導体装置の製造工程を説明するための図である。図１（ａ）は半導体装置の形成工程の途中の状態を示す断面図であり、充填樹脂層と半導体素子との間に間隙が形成されている。図１（ｂ）は充填樹脂層を流動させて、間隙を埋めた状態の半導体装置の断面図である。
【００１５】
図１（ｂ）に示すように、本発明の第１実施例による半導体装置は、基板１上に半導体素子２が搭載された構成を有する。半導体素子２は接着材３により基板に固定される。半導体素子２の周囲には充填樹脂層４が形成される。充填樹脂層４は半導体素子２の側面に密着しており、間隙は形成されていない。
【００１６】
充填樹脂層４を形成し、且つ半導体素子２を基板１上に搭載した状態では、図１（ａ）に示すように充填樹脂層４と半導体素子２の側面２ａとの間に間隙が形成されている。この間隙を埋めるため、本実施例では充填樹脂層４を形成する樹脂として、いわゆるＢ−ステージ樹脂を用いている。Ｂ−ステージ樹脂とは、一般的にエポキシ樹脂であり、液体状の樹脂から完全に硬化するまでの途中で硬化を止めることができる樹脂である。硬化が途中で止まった状態を半硬化状態と称する。この半硬化状態での硬化率は５０％程度である。
【００１７】
Ｂ-ステージ樹脂は、半硬化状態においては個体であるが、加熱することにより軟化して流動性を示すようになる。すなわち、Ｂ-ステージ樹脂は、半硬化状態において加熱することにより、軟化して流動する特性を有している。また、Ｂ−ステージ樹脂は、半硬化状態から加熱して流動性が増した後に更に加熱することにより完全に硬化させることができる。
【００１８】
本実施例では、充填樹脂層４を形成する材料として上述のＢ−ステージ樹脂を用いている。これにより、半硬化状態の充填樹脂層４を基板１上に形成して、半導体素子２を基板１に搭載した状態（図１（ａ）に示す状態）において、充填樹脂層４を加熱して流動させることにより、図１（ｂ）に示すように半導体素子２の側面２ａと充填樹脂層４との間の間隙に充填樹脂層４が流動して間隙が充填される。その後、更に充填樹脂層４を加熱することにより、充填樹脂層４を完全に硬化させる。したがって、充填樹脂層４は半導体素子２の側面に密着して半導体素子２を側面から支持し、半導体素子２の固定をより確実にすることができる。
【００１９】
ここで、充填樹脂層４は、図２に示すように半導体素子２を基板１に搭載した後に、半硬化状態で形成することとしてもよく、あるいは、図３に示すように半硬化状態の充填樹脂層４を基板１上に予め形成しておき、開口４ａ内に半導体素子２を配置して基板１に搭載することとしてもよい。また、半硬化状態の充填樹脂層４を、周知の刷法を用いて基板１に転写することとしてもよい。
【００２０】
半硬化状態の充填樹脂層４は加熱して流動性が増しても液体のように自由に流動するものではなく、間隙の幅（ギャップＧ）が半導体素子２の厚み（チップ厚Ｔｃ）より大きくなると、充填樹脂層４が流動して変形しても間隙を完全に埋めることができなくなる。半硬化状態の充填樹脂層４を流動させて半導体素子２との間の間隙を完全になくすには、図４に示すように、半導体素子２の厚み（チップ厚Ｔｃ）が間隙の幅（ギャップＧ）より大きいこと、すなわちＴｃ＞Ｇとすることが好ましい。
【００２１】
充填樹脂層４を形成するＢ−ステージ樹脂は、半硬化状態において流動性が現れる温度（軟化点）が６０℃以上であることが好ましい。これは、軟化点が６０℃より低いと、室温あるいは製造工程中の温度において充填樹脂層４が流動してしまうおそれがあるからである。
【００２２】
半硬化状態の充填樹脂層４の厚みは、半導体素子２を固定するために基板との間に設けられる接着剤３の厚みを考慮し、また、完全に硬化した後の充填樹脂層４の高さと半導体素子２の高さをほぼ同じ高さとするために、半導体素子２の厚みより５μｍ〜２０μｍ大きいことが好ましい。
【００２３】
上述の実施例では、充填樹脂層として、Ｂ−ステージエポキシ樹脂を用いたが、同様な特性を示す樹脂であれば、例えば、ノボラックやフェノール樹脂等も用いることができる。
【００２４】
次に、本発明の第２実施例による半導体装置について、図５を参照しながら説明する。図５は本発明の第２実施例による半導体装置の製造工程を説明するための図である。本発明の第２実施例による半導体装置は、図５（ｄ）に示すように、充填樹脂層４の上面４ｂと半導体素子２の上面２ｂとが同一面となっている。
【００２５】
まず、上述の第１実施例と同様に、基板１上に半硬化状態の充填樹脂層４を形成し、且つ半導体素子２を搭載する。ここで、半硬化状態の充填樹脂層４には、後工程で使用するビアホールのような貫通孔４ｃが形成されている。次に、図５（ａ）に示すように、充填樹脂層４と半導体素子２とにまたがって、感光性フィルム５を貼り付ける。本実施例では充填樹脂層４に貫通孔４ｃを形成するため、貫通孔４ｃの部分では充填樹脂層４が流動しないことが好ましい。そこで、図５（ｂ）に示すように、貫通孔４ｃを覆っている部分の感光性フィルム５を感光させ、この部分を取り除く。すなわち、充填樹脂層４の流動させたくない部分は、感光性フィルム５により覆われないようにする。
【００２６】
そして、図５（ｃ）に示すように、半硬化状態の充填樹脂層４を加熱して流動させる。これにより、感光性フィルム５により覆われている間隙には充填樹脂層４が流動して間隙がなくなる。一方、感光性フィルム５により覆われていない貫通孔４ｃの部分では、充填樹脂層４はほとんど流動することはなく、貫通孔４ｃが塞がれることはない。すなわち、充填樹脂層４をテープやフィルムで覆うことにより、充填樹脂層４の流動を促進することができる。
【００２７】
その後、図５（ｄ）に示すように、充填樹脂層４を完全に硬化させてから感光性フィルム５を剥離して取り除く。この状態では、半導体素子２と充填樹脂層４の間の間隙がなく、且つ半導体素子２の上面２ｂと充填樹脂層４の上面４ｂとが同一面となっている。また、充填樹脂層４には半硬化状態において形成された貫通孔４ｃはそのまま残っている。
【００２８】
なお、感光性フィルム５で覆われない部分に充填樹脂層４が流動しないことは、実験で明らかになったものであり、詳細な理由については明らかではないが、十分に再現性のある現象であり、実用上問題なく実施することができる。
【００２９】
また、上述の実施例では流動させたくない部分（貫通孔４ｃ）の位置に開口を設けるために感光性フィルム５を用いたが、そのような必要がない場合には、感光性フィルム以外のフィルムあるいはテープを用いることができる。例えば、ダイシングテープを貼り付けることとしてもよい。
【００３０】
次に、本発明の第３実施例による半導体装置について、図６を参照しながら説明する。図６は本発明の第３実施例による半導体装置の断面図である。
【００３１】
本発明の第３実施例による半導体装置は、複数の半導体素子（図６では２個の半導体素子２Ａ，２Ｂが示されている）を有するマルチチップモジュールである。半導体素子２Ａ，２Ｂの各々は、回路形成面を上に向けた状態で、背面が接着剤３により基板１に接合されて搭載される。
【００３２】
半導体素子２Ａ，２Ｂの周囲及びそれらの間には充填樹脂層４が設けられ、充填樹脂層４の上面と各半導体素子２Ａ，２Ｂの上面（回路形成面）とは略同一面となっている。充填樹脂層４は上述の第１実施例と同様の材料で形成され、各半導体素子２Ａ，２Ｂの側面に密着している。また、半導体素子２Ａ，２Ｂの回路形成面及び充填樹脂層４の上面にまたがって、絶縁層及び導電層を重ねた配線層６が形成され、配線層６の上面に外部接続端子としてハンダボール７が設けられる。各半導体素子２Ａ，２Ｂの回路形成面に設けられた電極は、配線層６内の配線を介して対応するハンダボール７に電気的に接続される。なお、配線層の形成は周知の半導体製造技術を用いることにより可能であり、その説明は省略する。
【００３３】
半導体素子２Ａ，２Ｂの厚みは５０μｍ程度であり、接着剤３の厚みは５μｍ〜２０μｍ程度である。したがって、充填樹脂層４を、厚みが５０＋５〜２０μｍとなるように形成することにより、半導体素子２Ａ，２Ｂの上面（回路形成面）と充填樹脂層４の上面とを略同一平面とすることができる。接着剤３の厚みは半導体素子の厚みには依存しないため、充填樹脂層４の厚みを、（半導体素子の厚み）＋（５μｍ〜２０μｍ）とすることで半導体素子の上面（回路形成面）と充填樹脂層４の上面とを略同一平面とすることができる。
【００３４】
なお、上述の実施例では、接着剤３は半導体素子２Ａ，２Ｂの背面を固定するためであり、回路形成面に塗布されるものではない。このため、接着剤３は特別な特性を必要とせず、充填樹脂層４と同じ材料とすることもできる。この場合、充填樹脂層４を流動させる工程において、接着剤３も流動させることができ、接着剤３と充填樹脂層４の密着性をより一層向上することができる。
【００３５】
次に、本発明の第４実施例について図７を参照しながら説明する。本発明の第４実施例による半導体装置は、半導体素子を基板に固定するための接着剤を、上述の第１実施例と同様な半硬化特性を有する樹脂としたものである。
【００３６】
まず、図７（ａ）に示すように、基板１上に形成した充填樹脂層８に開口８ａを形成し、半導体素子２を開口８ａ内に配置する。充填樹脂層８は、上述の実施例とは異なり、完全に硬化した状態である。半導体素子２の背面には上述の充填樹脂層４と同様な材料の接着剤３Ａが予め塗布され、半硬化状態とされている。次に、図７（ｂ）に示すように接着剤３Ａを加熱して流動可能な状態としながら、ボンディングツール１０を下降させる。この際、接着剤３Ａは半導体素子２により押圧されて流動し、半導体素子２と充填樹脂層８の側面８ｂとの間に入り込む。流動性の増した充填樹脂層８は、基板１への粘着性が増すため、半導体素子２を基板１に接着することができる。そして、ボンディングツール１０の下面が充填樹脂層８の上面８ｃに当接した位置でボンディングツール１０の下降を止め、この状態で接着剤３Ａを２００℃以上に加熱して、ほぼ完全（９０％以上）に硬化させる。
【００３７】
以上の方法によれば、半導体素子２と充填樹脂層８との間の間隙を接着剤３Ａにより充填することができ、且つ半導体素子２の上面と充填樹脂層８の上面８ｃとを精度よく同一平面とすることができる。
【００３８】
また、ボンディングツール１０の下面が充填樹脂層８の上面に当接して充填樹脂層８を押さえているため、接着剤３Ａの硬化時の収縮に起因して半導体素子２が変形することを防止することができる。さらに、接着剤３Ａは間隙を充填することができるような量が塗布され、半導体素子２による押圧力により間隙を充填していくので、接着材３Ａは基板１と完全に密着し、接着剤の濡れ不足や這い上がり現象が防止される。
【００３９】
ここで、図７に示す半導体素子２に接着剤３Ａを塗布して半硬化状態とする工程について、図８を参照しながら説明する。
【００４０】
まず、図８（ａ）に示すように、ウェハ９上に回路を形成して複数の半導体素子を形成する。次に、図８（ｂ）に示すように、ウェハ９の回路形成面とは反対側の背面に接着剤３Ａを塗布し、１００℃以下で硬化させて接着剤３Ａを半硬化状態とする。接着剤３Ａを１００℃以下で硬化させることにより、５０μｍ程度の厚みの薄型ウェハを用いた半導体素子に対しても、本実施例による方法を適用することが可能となる。そして、図８（ｃ）に示すように、ウェハ９を個片化して、半硬化状態の接着剤３Ａが背面に設けられた半導体素子２とする。この状態が、図７（ａ）に示すボンディングツール１０に支持された半導体素子２に相当する。
【００４１】
なお、上述のように、ボンディングツール１０の下面を充填樹脂層８の上面８ｃに当接させながら接着剤を硬化させる方法は、半硬化状態の接着剤でなくても適用することができる。すなわち、半導体素子２を基板１に固定するための接着剤が、Ｂ−ステージ樹脂ではなく通常の接着剤であっても、半導体素子２の上面と充填樹脂層８の上面８ｃとを精度よく同一平面とすることができるとういう効果を得ることができる。
【００４２】
まず、基板１上に形成した充填樹脂層８に開口８ａを形成し、半導体素子２を開口８ａ内に配置する。充填樹脂層８は、完全に硬化した状態である。半導体素子２の背面には通常の接着剤３Ｂが予め塗布されている。次に、図９（ａ）に示すように、ボンディングツール１０を下降させて、ボンディングツール１０の下面が充填樹脂層８の上面８ｃに当接した位置でボンディングツール１０の下降を止める。この状態で接着剤３Ｂを加熱して完全に硬化させる。接着剤３Ｂが硬化した後、ボンディングツール１０を充填樹脂層８の上面８ｃから離すと、図９（ｂ）に示すように、充填樹脂層８の上面８ｃと半導体素子の上面とは精度よく同一平面となる。
【００４３】
以上のように、本明細書は以下の発明を開示する。
【００４４】
（付記１） 基板と、
該基板上に搭載された半導体素子と、
該半導体素子の周囲に設けられ、前記半導体素子の高さを同じ高さになるように形成された樹脂充填層と
を有する半導体装置であって、
前記充填樹脂層は、半硬化状態において加熱された際に軟化し流動化する特性を有する半硬化性樹脂であり、前記充填樹脂層は前記半導体素子の側面に密着していることを特徴とする半導体装置。
【００４５】
（付記２） 付記１記載の半導体装置であって、
前記充填樹脂層を形成する半硬化性樹脂の、半硬化状態における軟化点は６０℃以上であることを特徴とする半導体装置。
【００４６】
（付記３） 付記１記載の半導体装置であって、
前記充填樹脂層を形成する半硬化性樹脂は、Ｂ−ステージエポキシ樹脂であることを特徴とする半導体装置。
【００４７】
（付記４） 付記１記載の半導体装置であって、
前記半導体素子は接着剤により前記基板に固定され、該接着剤は前記半硬化性樹脂よりなることを特徴とする半導体装置。
【００４８】
（付記５） 付記１記載の半導体装置であって、
前記半導体素子の厚みは５０μｍ以下であることを特徴とする半導体装置。
【００４９】
（付記６） 付記１記載の半導体装置であって、
複数個の半導体素子が前記基板上に搭載され、半導体素子間に前記充填樹脂層が設けられていることを特徴とする半導体装置。
【００５０】
（付記７） 半導体素子が間に配置された半硬化状態の充填樹脂層を基板上に形成し、
該半硬化状態の充填樹脂層を加熱して流動化させ、半導体素子と前記充填樹脂層の間の間隙に前記充填樹脂層を流動させて間隙をなくし、
前記充填樹脂層を加熱して完全に硬化させる
ことを特徴とする半導体装置の製造方法。
【００５１】
（付記８） 付記７記載の半導体装置の製造方法であって、
前記半導体素子を前記基板に搭載した後に、前記半硬化状態の充填樹脂層を前記半導体素子の周囲に形成することを特徴とする半導体装置の製造方法。
【００５２】
（付記９） 付記７記載の半導体装置の製造方法であって、
前記半導体素子を前記基板に搭載する前に、前記半導体素子配置するための開口を有する前記半硬化状態の充填樹脂層を前記基板上に形成することを特徴とする半導体装置の製造方法。
【００５３】
（付記１０） 付記７記載の半導体装置の製造方法であって、
前記半硬化状態の充填樹脂層を、印刷法を用いて前記基板に転写することを特徴とする半導体装置の製造方法。
【００５４】
（付記１１） 付記７記載の半導体装置の製造方法であって、
前記半硬化状態の充填樹脂層の側面と前記半導体素子の側面との間の距離を、前記半導体素子の厚みより小さくなるように前記半硬化状態の充填樹脂層を前記基板上に形成することを特徴とする半導体装置の製造方法。
【００５５】
（付記１２） 付記７記載の半導体装置の製造方法であって、
前記硬化状態の充填樹脂層を加熱して流動化させる前に、前記充填樹脂層と前記半導体素子にわたってフィルムを貼り付けることを特徴とする半導体装置の製造方法。
【００５６】
（付記１３） 付記１２記載の半導体装置の製造方法であって、
前記半硬化状態の充填樹脂層において流動化させたくない部分の前記フィルムの部分を除去しておくことを特徴とする半導体装置の製造方法。
【００５７】
（付記１４） 付記１３記載の半導体装置の製造方法であって、
前記フィルムとして感光性フィルムを用い、部分的に感光させて除去することを特徴とする半導体装置の製造方法。
【００５８】
（付記１５） 付記７記載の半導体装置の製造方法であって、
前記半硬化状態の充填樹脂層を、１００℃以上の温度で加熱して流動化させることを特徴とする半導体装置の製造方法。
【００５９】
（付記１６） 付記７記載の半導体装置の製造方法であって、
前記半硬化状態の充填樹脂層の厚みが、前記半導体素子の厚みより大きくなるように形成することを特徴とする半導体装置の製造方法。
【００６０】
（付記１７） 付記７記載の半導体装置の製造方法であって、
前記半導体素子に接着剤を５μｍ〜２０μｍの厚みに塗布し、該接着剤により前記半導体素子を前記基板に固定することを特徴とする半導体装置の製造方法。
【００６１】
（付記１８） 付記１７記載の半導体装置の製造方法であって、
前記接着剤として前記半硬化性樹脂を用いることを特徴とする半導体装置の製造方法。
【００６２】
（付記１９） 付記１８記載の半導体装置の製造方法であって、
前記接着剤を１００℃以下の温度で加熱して半硬化状態とすることを特徴とする半導体装置の製造方法。
【００６３】
（付記２０） 付記７記載の半導体装置の製造方法であって、
前記半導体素子として、厚みが５０μｍ以下の半導体素子を用いることを特徴とする半導体装置の製造方法。
【００６４】
（付記２１） 開口を有する充填樹脂層を基板上に形成し、且つ半硬化性樹脂よりなる接着剤が設けられた半導体素子を準備し、
該開口に前記半導体素子を配置し、
半硬化状態における前記接着剤を加熱して流動化させながら、前記半導体素子を前記接着剤を介して前記基板に対して押圧し、
前記半導体素子の上面が前記充填樹脂層の上面と同一面となる位置で前記半導体素子を維持しながら、前記接着剤を加熱し硬化させる
ことを特徴とする半導体装置の製造方法。
【００６５】
（付記２２） 付記２１記載の半導体装置の製造方法であって、
前記半導体装置の上面をボンディングツールの下面で支持し、該ボンディングツールの下面が前記充填樹脂層の上面に当接した状態で、前記接着剤を硬化させることを特徴とする半導体装置の製造方法。
【００６６】
（付記２３） 開口を有する充填樹脂層を基板上に形成し、且つ接着剤が設けられた半導体素子を準備し、
前記半導体装置の上面をボンディングツールの下面で支持して該開口に前記半導体素子を配置し、
ボンディングツールの下面が前記充填樹脂層の上面に当接した状態で、前記接着剤を硬化させる
ことを特徴とする半導体装置の製造方法。
【００６７】
【発明の効果】
上述の発明によれば、充填樹脂層の材料として半硬化性樹脂を用いることにより、半導体素子と充填樹脂層との間の間隙を、軟化した半硬化性樹脂で充填することができ、半導体素子と充填樹脂層との間に間隙がない半導体装置を容易に製造することができる。
【００６８】
また、本発明によれば、半導体素子と充填樹脂層との間の間隙を接着剤により充填することができ、且つ半導体素子の上面と充填樹脂層の上面とを精度よく同一平面とすることができる。接着剤間隙を充填することができるような量が塗布され、半導体素子による押圧力により間隙を充填していくので、接着材は基板と完全に密着し、接着剤の濡れ不足や這い上がり現象が防止される。
【図面の簡単な説明】
【図１】本発明の第１実施例による半導体装置の製造工程を説明するための図である。
【図２】充填樹脂層の形成工程を説明するための図である。
【図３】充填樹脂層の形成工程を説明するための図である。
【図４】充填樹脂層と半導体素子の厚みとの関係を説明するための図である。
【図５】本発明の第２実施例による半導体装置の製造工程を説明するための図である。
【図６】本発明の第３実施例による半導体装置の断面図である。
【図７】本発明の第４実施例による半導体装置の製造工程を説明するための図である。
【図８】半導体素子に接着剤を塗布して半硬化状態とする工程を説明するための図である。
【図９】充填樹脂層の上面と半導体素子の上面とを同一平面にする方法を説明するための図である。
【符号の説明】
１ 基板
２ 半導体素子
３，３Ａ，３Ｂ 接着剤
４，８ 充填樹脂層
６ 配線層
５ 感光性フィルム
７ ハンダボール
９ ウェハ
１０ ボンディングツール[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a semiconductor device, and more particularly to a semiconductor device in which a resin layer is provided around a semiconductor element and a manufacturing method thereof.
[0002]
[Prior art]
In a semiconductor device formed by mounting a semiconductor element on a substrate, generally, the semiconductor element is securely fixed to the substrate by covering the periphery of the semiconductor element with a resin. When a plurality of semiconductor elements are mounted on a substrate such as a multichip module, a resin is filled between the semiconductor elements. Each semiconductor element is securely fixed to the substrate by the filled resin layer, and the semiconductor elements are reliably insulated from each other.
[0003]
The filling resin layer can be formed in advance before the semiconductor element is mounted on the substrate, or can be filled after the semiconductor element is mounted on the substrate.
[0004]
[Patent Document 1]
Japanese Patent Laid-Open No. 2002-110714
[Problems to be solved by the invention]
When the above-described filling resin layer is formed in advance before mounting the semiconductor element, an opening in which the surface of the substrate is exposed is formed by removing a part of the filling resin layer formed on the substrate, and the semiconductor is formed in this opening. Arrange the elements and mount them. Therefore, since the opening is formed with a size slightly larger than that of the semiconductor element, a gap is formed between the inner wall of the opening and the side surface of the semiconductor element.
[0006]
Further, when the filling resin layer is formed after mounting the semiconductor element, for example, there is a method in which the semiconductor element is masked, a resin is printed on the substrate, and the applied resin is cured. Even in this case, it is difficult to bring the filling resin layer into close contact with the side surface of the semiconductor element, and a gap is formed between the filling resin layer and the side surface of the semiconductor element.
[0007]
As described above, if a gap is formed between the side surface of the semiconductor element and the filling resin layer, the effect of fixing the semiconductor element by the filling resin cannot be obtained. Further, the gap hinders the formation of wiring on the semiconductor element and the filling resin layer. When a resin insulation layer is provided on the semiconductor element and the filling resin layer, this gap is filled by part of the resin insulation layer entering the gap at the formation stage of the resin insulation layer, but the gap is completely filled. I can't do it.
[0008]
The present invention has been made in view of the above, and an object thereof is to provide a method of manufacturing a semiconductor equipment which filling resin layer is in close contact with the side surface of the semiconductor element.
[0009]
[Means for Solving the Problems]
In order to solve the above problems, according to the present invention, a semi-cured filled resin layer having a semiconductor element with a circuit forming surface facing in the opposite direction to the substrate is formed on the substrate, and the semi-cured resin layer is formed on the substrate. Heating and fluidizing the filled resin layer in a cured state, flowing the filled resin layer into the gap between the semiconductor element and the filled resin layer to eliminate the gap, and heating the filled resin layer to completely cure A method for manufacturing a semiconductor device is provided.
[0011]
According to the above-described invention, by using a semi-curable resin as a material for the filling resin layer, the gap between the semiconductor element and the filling resin layer can be filled with the softened semi-curable resin. And a filled resin layer can be easily manufactured.
[0012]
According to the present invention, a filling resin layer having an opening is formed on a substrate, and a semiconductor element provided with an adhesive made of a semi-curable resin is prepared, and the semiconductor element is disposed in the opening, While heating and fluidizing the adhesive in a semi-cured state, the semiconductor element is pressed against the substrate through the adhesive, and the upper surface of the semiconductor element is flush with the upper surface of the filled resin layer A method of manufacturing a semiconductor device is provided, wherein the adhesive is heated and cured while maintaining the semiconductor element at a position.
[0013]
According to the above-described invention, the gap between the semiconductor element and the filling resin layer can be filled with the adhesive, and the upper surface of the semiconductor element and the upper surface of the filling resin layer can be accurately flush with each other. . In addition, the amount that can fill the adhesive gap is applied, and the gap is filled by the pressing force of the semiconductor element, so that the adhesive completely adheres to the substrate, insufficient wetting of the adhesive or scooping up The phenomenon is prevented.
DETAILED DESCRIPTION OF THE INVENTION
Next, embodiments of the present invention will be described with reference to the drawings.
[0014]
FIG. 1 is a view for explaining a manufacturing process of a semiconductor device according to a first embodiment of the present invention. FIG. 1A is a cross-sectional view showing a state in the process of forming a semiconductor device, and a gap is formed between the filling resin layer and the semiconductor element. FIG. 1B is a cross-sectional view of the semiconductor device in a state where the filling resin layer is flowed to fill the gap.
[0015]
As shown in FIG. 1B, the semiconductor device according to the first embodiment of the present invention has a configuration in which a semiconductor element 2 is mounted on a substrate 1. The semiconductor element 2 is fixed to the substrate by an adhesive material 3. A filled resin layer 4 is formed around the semiconductor element 2. The filled resin layer 4 is in close contact with the side surface of the semiconductor element 2 and no gap is formed.
[0016]
In the state where the filling resin layer 4 is formed and the semiconductor element 2 is mounted on the substrate 1, a gap is formed between the filling resin layer 4 and the side surface 2a of the semiconductor element 2 as shown in FIG. ing. In order to fill this gap, a so-called B-stage resin is used as the resin for forming the filling resin layer 4 in this embodiment. The B-stage resin is generally an epoxy resin, and is a resin that can be cured in the course of being completely cured from a liquid resin. A state where the curing has stopped midway is referred to as a semi-cured state. The curing rate in this semi-cured state is about 50%.
[0017]
The B-stage resin is an individual in a semi-cured state, but softens and exhibits fluidity when heated. That is, the B-stage resin has the property of softening and flowing when heated in a semi-cured state. The B-stage resin can be completely cured by further heating after heating from a semi-cured state to increase fluidity.
[0018]
In this embodiment, the above-described B-stage resin is used as a material for forming the filling resin layer 4. Thereby, the filling resin layer 4 in a semi-cured state is formed on the substrate 1 and the filling resin layer 4 is heated in a state where the semiconductor element 2 is mounted on the substrate 1 (the state shown in FIG. 1A). By flowing, the filling resin layer 4 flows into the gap between the side surface 2a of the semiconductor element 2 and the filling resin layer 4 as shown in FIG. Thereafter, the filled resin layer 4 is further heated to completely cure the filled resin layer 4. Therefore, the filling resin layer 4 is in close contact with the side surface of the semiconductor element 2 to support the semiconductor element 2 from the side surface, and the semiconductor element 2 can be fixed more reliably.
[0019]
Here, the filling resin layer 4 may be formed in a semi-cured state after the semiconductor element 2 is mounted on the substrate 1 as shown in FIG. 2, or may be filled in a semi-cured state as shown in FIG. The resin layer 4 may be formed on the substrate 1 in advance, and the semiconductor element 2 may be disposed in the opening 4a and mounted on the substrate 1. Alternatively, the semi-cured filling resin layer 4 may be transferred to the substrate 1 using a known printing method.
[0020]
The semi-cured filled resin layer 4 does not flow freely like a liquid even when heated to increase fluidity, and the gap width (gap G) is larger than the thickness of the semiconductor element 2 (chip thickness Tc). Then, even if the filling resin layer 4 flows and deforms, the gap cannot be completely filled. In order to make the filling resin layer 4 in a semi-cured state flow and completely eliminate the gap between the semiconductor element 2, as shown in FIG. 4, the thickness of the semiconductor element 2 (chip thickness Tc) is set to the width of the gap (gap). G) is preferably larger, that is, Tc> G.
[0021]
The B-stage resin forming the filled resin layer 4 preferably has a temperature (softening point) at which fluidity appears in a semi-cured state of 60 ° C. or higher. This is because if the softening point is lower than 60 ° C., the filled resin layer 4 may flow at room temperature or a temperature during the manufacturing process.
[0022]
The thickness of the filling resin layer 4 in the semi-cured state takes into consideration the thickness of the adhesive 3 provided between the substrate 3 and the substrate in order to fix the semiconductor element 2, and the thickness of the filling resin layer 4 after being completely cured is high. And the thickness of the semiconductor element 2 is preferably 5 μm to 20 μm larger than the thickness of the semiconductor element 2.
[0023]
In the above-described embodiment, the B-stage epoxy resin is used as the filling resin layer. However, for example, a novolac or a phenol resin can be used as long as the resin exhibits similar characteristics.
[0024]
Next, a semiconductor device according to a second embodiment of the present invention will be described with reference to FIG. FIG. 5 is a diagram for explaining a manufacturing process of a semiconductor device according to the second embodiment of the present invention. In the semiconductor device according to the second embodiment of the present invention, the upper surface 4b of the filling resin layer 4 and the upper surface 2b of the semiconductor element 2 are flush with each other as shown in FIG.
[0025]
First, as in the first embodiment, a semi-cured filling resin layer 4 is formed on the substrate 1 and the semiconductor element 2 is mounted. Here, the filling resin layer 4 in a semi-cured state is formed with a through hole 4c such as a via hole used in a subsequent process. Next, as shown in FIG. 5A, the photosensitive film 5 is pasted across the filling resin layer 4 and the semiconductor element 2. In this embodiment, since the through hole 4c is formed in the filled resin layer 4, it is preferable that the filled resin layer 4 does not flow in the portion of the through hole 4c. Therefore, as shown in FIG. 5B, the portion of the photosensitive film 5 covering the through hole 4c is exposed to light, and this portion is removed. That is, the portion of the filled resin layer 4 that is not desired to flow is not covered with the photosensitive film 5.
[0026]
And as shown in FIG.5 (c), the filling resin layer 4 of a semi-hardened state is heated and made to flow. Thereby, the filling resin layer 4 flows in the gap covered with the photosensitive film 5 and the gap disappears. On the other hand, in the part of the through hole 4c not covered with the photosensitive film 5, the filled resin layer 4 hardly flows and the through hole 4c is not blocked. That is, the flow of the filled resin layer 4 can be promoted by covering the filled resin layer 4 with a tape or a film.
[0027]
Thereafter, as shown in FIG. 5D, after the filled resin layer 4 is completely cured, the photosensitive film 5 is peeled off and removed. In this state, there is no gap between the semiconductor element 2 and the filling resin layer 4, and the upper surface 2b of the semiconductor element 2 and the upper surface 4b of the filling resin layer 4 are flush with each other. Moreover, the through-hole 4c formed in the semi-cured state remains in the filling resin layer 4 as it is.
[0028]
Note that the fact that the filled resin layer 4 does not flow in a portion not covered with the photosensitive film 5 has been clarified by experiments, and the detailed reason is not clear, but it is a sufficiently reproducible phenomenon. Yes, it can be carried out without problems in practical use.
[0029]
Further, in the above-described embodiment, the photosensitive film 5 is used to provide an opening at the position of the portion (through hole 4c) that is not desired to flow. However, when such a necessity is not required, a film other than the photosensitive film is used. Alternatively, a tape can be used. For example, a dicing tape may be attached.
[0030]
Next, a semiconductor device according to a third embodiment of the present invention will be described with reference to FIG. FIG. 6 is a cross-sectional view of a semiconductor device according to a third embodiment of the present invention.
[0031]
The semiconductor device according to the third embodiment of the present invention is a multi-chip module having a plurality of semiconductor elements (two semiconductor elements 2A and 2B are shown in FIG. 6). Each of the semiconductor elements 2 </ b> A and 2 </ b> B is mounted with the back surface bonded to the substrate 1 with the adhesive 3 with the circuit formation surface facing upward.
[0032]
A filling resin layer 4 is provided around and between the semiconductor elements 2A and 2B, and the upper surface of the filling resin layer 4 and the upper surfaces (circuit formation surfaces) of the semiconductor elements 2A and 2B are substantially flush with each other. . The filling resin layer 4 is formed of the same material as that in the first embodiment, and is in close contact with the side surfaces of the semiconductor elements 2A and 2B. Further, a wiring layer 6 in which an insulating layer and a conductive layer are overlapped is formed across the circuit formation surfaces of the semiconductor elements 2A and 2B and the upper surface of the filling resin layer 4, and solder balls 7 as external connection terminals are formed on the upper surface of the wiring layer 6. Is provided. The electrodes provided on the circuit formation surfaces of the semiconductor elements 2A and 2B are electrically connected to the corresponding solder balls 7 via the wirings in the wiring layer 6. The wiring layer can be formed by using a well-known semiconductor manufacturing technique, and the description thereof is omitted.
[0033]
The thickness of the semiconductor elements 2A and 2B is about 50 μm, and the thickness of the adhesive 3 is about 5 μm to 20 μm. Therefore, by forming the filling resin layer 4 so as to have a thickness of 50 + 5 to 20 μm, the upper surfaces (circuit formation surfaces) of the semiconductor elements 2A and 2B and the upper surface of the filling resin layer 4 can be made substantially flush with each other. it can. Since the thickness of the adhesive 3 does not depend on the thickness of the semiconductor element, the thickness of the filling resin layer 4 is set to (semiconductor element thickness) + (5 μm to 20 μm). The upper surface of the filling resin layer 4 can be made substantially flush.
[0034]
In the above-described embodiment, the adhesive 3 is for fixing the back surfaces of the semiconductor elements 2A and 2B, and is not applied to the circuit formation surface. For this reason, the adhesive 3 does not require special characteristics and can be made of the same material as the filling resin layer 4. In this case, in the step of flowing the filled resin layer 4, the adhesive 3 can also be flowed, and the adhesion between the adhesive 3 and the filled resin layer 4 can be further improved.
[0035]
Next, a fourth embodiment of the present invention will be described with reference to FIG. In the semiconductor device according to the fourth embodiment of the present invention, the adhesive for fixing the semiconductor element to the substrate is a resin having a semi-curing characteristic similar to that of the first embodiment.
[0036]
First, as shown in FIG. 7A, the opening 8a is formed in the filling resin layer 8 formed on the substrate 1, and the semiconductor element 2 is disposed in the opening 8a. Unlike the above-described embodiments, the filled resin layer 8 is in a completely cured state. An adhesive 3A made of the same material as that of the above-described filling resin layer 4 is applied in advance to the back surface of the semiconductor element 2 so as to be in a semi-cured state. Next, as shown in FIG. 7B, the bonding tool 10 is lowered while heating the adhesive 3 </ b> A so that it can flow. At this time, the adhesive 3 </ b> A is pressed and flows by the semiconductor element 2 and enters between the semiconductor element 2 and the side surface 8 b of the filling resin layer 8. The filled resin layer 8 having increased fluidity increases the adhesiveness to the substrate 1, so that the semiconductor element 2 can be bonded to the substrate 1. Then, the lowering of the bonding tool 10 is stopped at a position where the lower surface of the bonding tool 10 is in contact with the upper surface 8c of the filling resin layer 8, and in this state, the adhesive 3A is heated to 200 ° C. or higher to be almost completely (90% or higher ) To cure.
[0037]
According to the above method, the gap between the semiconductor element 2 and the filling resin layer 8 can be filled with the adhesive 3A, and the upper surface of the semiconductor element 2 and the upper surface 8c of the filling resin layer 8 are precisely the same. It can be a plane.
[0038]
In addition, since the lower surface of the bonding tool 10 is in contact with the upper surface of the filling resin layer 8 and presses the filling resin layer 8, the semiconductor element 2 is prevented from being deformed due to shrinkage when the adhesive 3A is cured. be able to. Further, the adhesive 3A is applied in such an amount that the gap can be filled, and the gap is filled by the pressing force of the semiconductor element 2, so that the adhesive 3A is in close contact with the substrate 1 and the adhesive 3A Insufficient wetting and creeping are prevented.
[0039]
Here, the process of applying the adhesive 3A to the semiconductor element 2 shown in FIG. 7 to obtain a semi-cured state will be described with reference to FIG.
[0040]
First, as shown in FIG. 8A, a circuit is formed on the wafer 9 to form a plurality of semiconductor elements. Next, as shown in FIG. 8B, the adhesive 3A is applied to the back surface of the wafer 9 opposite to the circuit forming surface, and cured at 100 ° C. or lower to make the adhesive 3A semi-cured. By curing the adhesive 3A at 100 ° C. or lower, the method according to this embodiment can be applied to a semiconductor element using a thin wafer having a thickness of about 50 μm. And as shown in FIG.8 (c), the wafer 9 is separated into pieces and it is set as the semiconductor element 2 with which the adhesive 3A of the semi-hardened state was provided in the back surface. This state corresponds to the semiconductor element 2 supported by the bonding tool 10 shown in FIG.
[0041]
As described above, the method of curing the adhesive while bringing the lower surface of the bonding tool 10 into contact with the upper surface 8c of the filling resin layer 8 can be applied even if it is not a semi-cured adhesive. That is, even if the adhesive for fixing the semiconductor element 2 to the substrate 1 is not a B-stage resin but a normal adhesive, the upper surface of the semiconductor element 2 and the upper surface 8c of the filling resin layer 8 are accurately the same. The effect that it can be a flat surface can be obtained.
[0042]
First, the opening 8a is formed in the filling resin layer 8 formed on the substrate 1, and the semiconductor element 2 is disposed in the opening 8a. The filled resin layer 8 is in a completely cured state. A normal adhesive 3 </ b> B is applied to the back surface of the semiconductor element 2 in advance. Next, as shown in FIG. 9A, the bonding tool 10 is lowered, and the lowering of the bonding tool 10 is stopped at a position where the lower surface of the bonding tool 10 contacts the upper surface 8 c of the filling resin layer 8. In this state, the adhesive 3B is heated to be completely cured. When the bonding tool 10 is separated from the upper surface 8c of the filling resin layer 8 after the adhesive 3B is cured, the upper surface 8c of the filling resin layer 8 and the upper surface of the semiconductor element are precisely the same as shown in FIG. 9B. It becomes a plane.
[0043]
As described above, this specification discloses the following invention.
[0044]
(Appendix 1) a substrate,
A semiconductor element mounted on the substrate;
A semiconductor device including a resin-filled layer provided around the semiconductor element and formed to have the same height as the semiconductor element;
The filled resin layer is a semi-curable resin having a property of softening and fluidizing when heated in a semi-cured state, and the filled resin layer is in close contact with a side surface of the semiconductor element. Semiconductor device.
[0045]
(Supplementary note 2) The semiconductor device according to supplementary note 1, wherein
The semiconductor device, wherein the semi-curing resin forming the filling resin layer has a softening point in a semi-cured state of 60 ° C. or higher.
[0046]
(Supplementary note 3) The semiconductor device according to supplementary note 1, wherein
The semi-curable resin forming the filling resin layer is a B-stage epoxy resin.
[0047]
(Supplementary note 4) The semiconductor device according to supplementary note 1, wherein
The semiconductor device is fixed to the substrate by an adhesive, and the adhesive is made of the semi-curable resin.
[0048]
(Supplementary note 5) The semiconductor device according to supplementary note 1, wherein
The semiconductor device is characterized in that the thickness of the semiconductor element is 50 μm or less.
[0049]
(Supplementary note 6) The semiconductor device according to supplementary note 1, wherein
A semiconductor device, wherein a plurality of semiconductor elements are mounted on the substrate, and the filling resin layer is provided between the semiconductor elements.
[0050]
(Appendix 7) Forming a semi-cured filling resin layer with a semiconductor element disposed therebetween on a substrate,
Heating and fluidizing the semi-cured filled resin layer, flowing the filled resin layer in a gap between a semiconductor element and the filled resin layer, eliminating the gap,
A method of manufacturing a semiconductor device, wherein the filling resin layer is heated to be completely cured.
[0051]
(Appendix 8) A method of manufacturing a semiconductor device according to appendix 7,
A semiconductor device manufacturing method, wherein the semi-cured filling resin layer is formed around the semiconductor element after the semiconductor element is mounted on the substrate.
[0052]
(Additional remark 9) It is a manufacturing method of the semiconductor device of Additional remark 7, Comprising:
Before mounting the semiconductor element on the substrate, the semi-cured filling resin layer having an opening for arranging the semiconductor element is formed on the substrate.
[0053]
(Additional remark 10) It is a manufacturing method of the semiconductor device of Additional remark 7, Comprising:
A method of manufacturing a semiconductor device, wherein the semi-cured filled resin layer is transferred to the substrate by a printing method.
[0054]
(Additional remark 11) It is a manufacturing method of the semiconductor device of Additional remark 7, Comprising:
Forming the semi-cured filling resin layer on the substrate so that the distance between the side surface of the semi-cured filling resin layer and the side surface of the semiconductor element is smaller than the thickness of the semiconductor element; A method of manufacturing a semiconductor device.
[0055]
(Additional remark 12) It is a manufacturing method of the semiconductor device of Additional remark 7, Comprising:
A method of manufacturing a semiconductor device, comprising: pasting a film across the filling resin layer and the semiconductor element before heating and fluidizing the filling resin layer in a cured state.
[0056]
(Additional remark 13) It is a manufacturing method of the semiconductor device of Additional remark 12, Comprising:
A method of manufacturing a semiconductor device, wherein a portion of the film that is not desired to be fluidized in the semi-cured filled resin layer is removed.
[0057]
(Supplementary note 14) A method for manufacturing a semiconductor device according to supplementary note 13, comprising:
A method of manufacturing a semiconductor device, wherein a photosensitive film is used as the film, and the film is partially exposed to be removed.
[0058]
(Additional remark 15) It is a manufacturing method of the semiconductor device of Additional remark 7, Comprising:
A method for manufacturing a semiconductor device, wherein the semi-cured filled resin layer is fluidized by heating at a temperature of 100 ° C. or higher.
[0059]
(Additional remark 16) It is a manufacturing method of the semiconductor device of Additional remark 7, Comprising:
A method of manufacturing a semiconductor device, wherein the semi-cured filled resin layer is formed to have a thickness greater than that of the semiconductor element.
[0060]
(Supplementary note 17) A method of manufacturing a semiconductor device according to supplementary note 7,
A manufacturing method of a semiconductor device, wherein an adhesive is applied to the semiconductor element to a thickness of 5 μm to 20 μm, and the semiconductor element is fixed to the substrate by the adhesive.
[0061]
(Supplementary note 18) A method of manufacturing a semiconductor device according to supplementary note 17,
A method for manufacturing a semiconductor device, wherein the semi-curable resin is used as the adhesive.
[0062]
(Supplementary note 19) A method of manufacturing a semiconductor device according to supplementary note 18, comprising:
A method of manufacturing a semiconductor device, wherein the adhesive is heated at a temperature of 100 ° C. or lower to be in a semi-cured state.
[0063]
(Supplementary note 20) A method of manufacturing a semiconductor device according to supplementary note 7,
A semiconductor device manufacturing method using a semiconductor element having a thickness of 50 μm or less as the semiconductor element.
[0064]
(Supplementary note 21) A semiconductor element provided with a filling resin layer having an opening on a substrate and provided with an adhesive made of a semi-curable resin is prepared,
Placing the semiconductor element in the opening;
While heating and fluidizing the adhesive in a semi-cured state, the semiconductor element is pressed against the substrate through the adhesive,
A method of manufacturing a semiconductor device, comprising: heating and curing the adhesive while maintaining the semiconductor element at a position where an upper surface of the semiconductor element is flush with an upper surface of the filling resin layer.
[0065]
(Appendix 22) A method of manufacturing a semiconductor device according to appendix 21,
A method of manufacturing a semiconductor device, comprising: supporting an upper surface of the semiconductor device with a lower surface of a bonding tool; and curing the adhesive in a state where the lower surface of the bonding tool is in contact with the upper surface of the filling resin layer.
[0066]
(Supplementary Note 23) A filled resin layer having an opening is formed on a substrate, and a semiconductor element provided with an adhesive is prepared.
The upper surface of the semiconductor device is supported by the lower surface of a bonding tool, and the semiconductor element is disposed in the opening.
A method of manufacturing a semiconductor device, comprising: curing the adhesive in a state where a lower surface of a bonding tool is in contact with an upper surface of the filling resin layer.
[0067]
【The invention's effect】
According to the above-described invention, by using a semi-curable resin as a material for the filling resin layer, the gap between the semiconductor element and the filling resin layer can be filled with the softened semi-curable resin. And a filled resin layer can be easily manufactured.
[0068]
In addition, according to the present invention, the gap between the semiconductor element and the filling resin layer can be filled with the adhesive, and the upper surface of the semiconductor element and the upper surface of the filling resin layer can be accurately flush with each other. it can. An amount that can fill the adhesive gap is applied, and the gap is filled by the pressing force of the semiconductor element, so that the adhesive completely adheres to the substrate, causing insufficient wetting of the adhesive and creeping phenomenon. Is prevented.
[Brief description of the drawings]
FIG. 1 is a diagram for explaining a manufacturing process of a semiconductor device according to a first embodiment of the invention;
FIG. 2 is a view for explaining a filling resin layer forming step.
FIG. 3 is a view for explaining a filling resin layer forming step.
FIG. 4 is a diagram for explaining a relationship between a filling resin layer and a thickness of a semiconductor element.
FIG. 5 is a diagram illustrating a manufacturing process of a semiconductor device according to a second embodiment of the present invention.
FIG. 6 is a cross-sectional view of a semiconductor device according to a third embodiment of the present invention.
FIG. 7 is a diagram illustrating a manufacturing process of a semiconductor device according to a fourth embodiment of the present invention.
FIG. 8 is a diagram for explaining a step of applying a bonding agent to a semiconductor element to make it a semi-cured state.
FIG. 9 is a view for explaining a method of making the upper surface of the filling resin layer and the upper surface of the semiconductor element flush with each other.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Substrate 2 Semiconductor element 3, 3A, 3B Adhesive 4,8 Filling resin layer 6 Wiring layer 5 Photosensitive film 7 Solder ball 9 Wafer 10 Bonding tool

Claims (6)

回路形成面が基板と反対方向に向いた半導体素子が間に配置された半硬化状態の充填樹脂層を該基板上に形成し、
該半硬化状態の充填樹脂層を加熱して流動化させ、前記半導体素子と前記充填樹脂層の間の間隙に前記充填樹脂層を流動させて間隙をなくし、
前記充填樹脂層を加熱して完全に硬化させる
ことを特徴とする半導体装置の製造方法。Forming a semi-cured filling resin layer on the substrate with a semiconductor element having a circuit forming surface facing away from the substrate,
Heating and fluidizing the semi-cured filling resin layer, causing the filling resin layer to flow in a gap between the semiconductor element and the filling resin layer, and eliminating the gap,
The method for manufacturing a semiconductor device, wherein the filling resin layer is heated to be completely cured. 請求項１記載の半導体装置の製造方法であって、
前記半硬化状態の充填樹脂層の側面と前記半導体素子の側面との間の距離を、前記半導体素子の厚みより小さくなるように前記半硬化状態の充填樹脂層を前記基板上に形成することを特徴とする半導体装置の製造方法。A method of manufacturing a semiconductor device according to claim 1 ,
Forming the semi-cured filling resin layer on the substrate so that the distance between the side surface of the semi-cured filling resin layer and the side surface of the semiconductor element is smaller than the thickness of the semiconductor element; A method of manufacturing a semiconductor device. 請求項１記載の半導体装置の製造方法であって、
前記硬化状態の充填樹脂層を加熱して流動化させる前に、前記充填樹脂層と前記半導体素子にわたってフィルムを貼り付けることを特徴とする半導体装置の製造方法。A method of manufacturing a semiconductor device according to claim 1 ,
A method of manufacturing a semiconductor device, comprising: pasting a film across the filling resin layer and the semiconductor element before heating and fluidizing the filling resin layer in a cured state. 請求項３記載の半導体装置の製造方法であって、
前記半硬化状態の充填樹脂層において流動化させたくない部分の前記フィルムの部分を除去しておくことを特徴とする半導体装置の製造方法。A method of manufacturing a semiconductor device according to claim 3 ,
A method of manufacturing a semiconductor device, wherein a portion of the film that is not desired to be fluidized in the semi-cured filled resin layer is removed. 開口を有する充填樹脂層を基板上に形成し、且つ半硬化性樹脂よりなる接着剤が設けられた半導体素子を準備し、
該開口に前記半導体素子を配置し、
半硬化状態における前記接着剤を加熱して流動化させながら、前記半導体素子を前記接着剤を介して前記基板に対して押圧し、
前記半導体素子の上面が前記充填樹脂層の上面と同一面となる位置で前記半導体素子を維持しながら、前記接着剤を加熱し硬化させる
ことを特徴とする半導体装置の製造方法。Forming a filled resin layer having an opening on a substrate and preparing a semiconductor element provided with an adhesive made of a semi-curable resin;
Placing the semiconductor element in the opening;
While heating and fluidizing the adhesive in a semi-cured state, the semiconductor element is pressed against the substrate through the adhesive,
The manufacturing method of a semiconductor device, wherein the adhesive is heated and cured while maintaining the semiconductor element at a position where the upper surface of the semiconductor element is flush with the upper surface of the filling resin layer. 請求項５記載の半導体装置の製造方法であって、
前記半導体装置の上面をボンディングツールの下面で支持し、該ボンディングツールの下面が前記充填樹脂層の上面に当接した状態で、前記接着剤を硬化させることを特徴とする半導体装置の製造方法。A method of manufacturing a semiconductor device according to claim 5 ,
A method of manufacturing a semiconductor device, comprising: supporting an upper surface of the semiconductor device with a lower surface of a bonding tool; and curing the adhesive in a state where the lower surface of the bonding tool is in contact with the upper surface of the filling resin layer.
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EP03253279A EP1367645A3 (en) 2002-05-31 2003-05-23 Semiconductor device and manufacturing method thereof
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CNB03138174XA CN100435334C (en) 2002-05-31 2003-05-30 Semiconductor device and its mfg. method
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