JP2001135662A - Semiconductor element and method for manufacturing semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor element for flip-chip mounting which allows a small manufacturing cost and high reliability and productivity and a method for manufacturing a semiconductor device. SOLUTION: A semiconductor element 1 comprising a conductive post 4 formed in an I/O electrode terminal part 2 on the semiconductor element and a resin film 3 semi-hardened (B-staged) on the surface of the semiconductor element in the conductive post side is flip-chip mounted with face down on a circuit board by pressing and heat treating.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor element structure and a method of manufacturing a semiconductor device, and more particularly to a semiconductor element for flip-chip mounting and a method of manufacturing a semiconductor device for mounting the semiconductor element on a circuit board by flip-chip mounting. It is about.

[0002]

2. Description of the Related Art In recent years, with the miniaturization and high performance of portable electronic devices and the like, the degree of integration of semiconductor elements has increased, and the miniaturization of semiconductor devices and the narrow pitch between connection terminals have been progressing. For this reason, development of semiconductor devices using flip-chip mounting technology has been actively conducted. Hereinafter, an example of a conventional semiconductor device using the flip chip mounting technique will be described.

Conventionally, as a semiconductor mounting technology, Japanese Patent Application Laid-Open
The thing described in 3-275127 gazette is known.

FIGS. 7 and 8 show an example of a conventional semiconductor device manufacturing process.

FIG. 7 shows that the semiconductor element 101 on which the bumps 111 are formed is mounted face down on a circuit board 109 to which an anisotropic conductive sheet 112 is adhered, and then pressed by a pressure heating head 108. And a step of performing a heat treatment. In this step, the bumps 111 provided on the semiconductor element 101 are electrically connected to the electrode terminals 110 on the circuit board 109 side, and the semiconductor element is connected via the anisotropic conductive sheet 112. The semiconductor device is completed by bonding the substrate 101 and the circuit board 109.

FIG. 8 shows that the semiconductor element 101 on which the bumps 111 are formed is mounted face down on a circuit board 109, and then a sealing material 113 is provided in a gap between the semiconductor element 101 and the circuit board 109 by utilizing a capillary phenomenon. This shows the filling process. After this step, the filled sealing material 113 is cured by heating to complete the semiconductor device.

[0007]

In the conventional example shown in FIG. 7, the anisotropic conductive sheet 112 needs to be pasted on the circuit board 109 side in advance, and the anisotropic conductive sheet 112 has a low thermal expansion coefficient. There is a problem in the initial connection state and reliability due to the problem that the particle size of silica or the like contained in the conductive sheet 112 is larger than the conductive particles.

[0008] The manufacturing cost is also disadvantageous in that the anisotropic conductive sheet 112 is expensive, and in the conventional examples shown in FIGS. 7 and 8, it is necessary to individually form the bumps 111 using a bump bonder. Have.

In the conventional example shown in FIG. 8, the semiconductor element size is 10 × 10 mm, and the semiconductor element 101 and the circuit board 109 are mounted.
Is set to 0.05 mm, the substrate temperature when filling the sealing material 113 is set to 40 to 70 ° C., and the inclination angle at the time of filling is set to 15 °, a fillet is formed from the start of the filling of the sealing material 113. It takes 3 to 15 minutes until the sealing material 113
It takes 30 to 400 minutes to heat and cure, and a filling device and a curing device are required as manufacturing equipment.

Accordingly, an object of the present invention is to provide a method of manufacturing a semiconductor element and a semiconductor device for flip-chip mounting, which has low manufacturing cost and high reliability and productivity.

[0011]

In order to achieve the above-mentioned object, a semiconductor device according to the present invention is a semiconductor device which is flip-chip mounted face-down on a circuit board, and an input / output electrode terminal of the semiconductor device. And a semi-cured (B-staged) resin film formed on the surface of the semiconductor element on the side where the conductive posts are formed.

In the semiconductor element of the present invention, it is preferable that the resin film is a sealing material that fills a gap between the semiconductor element and the circuit board when mounting the semiconductor element on the circuit board. .

In the semiconductor device according to the present invention, it is preferable that inorganic insulating particles are mixed in the resin film.

Further, in the semiconductor device of the present invention,
The resin film is made of a photosensitive resin, has an opening formed in a portion corresponding to the input / output electrode terminal portion by photolithography, and the conductive post formed in the opening is formed by electroplating. Alternatively, the metal post is preferably formed by electroless plating.

In the semiconductor device according to the present invention,
The resin film is made of a photosensitive resin, has an opening formed in a portion corresponding to the input / output electrode terminal portion by photolithography, and the conductive post formed in the opening has a conductive property. The conductive resin post is preferably formed of a resin containing particles.

In the semiconductor device of the present invention,
The resin film is made of a photosensitive resin, has an opening formed in a portion corresponding to the input / output electrode terminal portion by photolithography, and the conductive post formed in the opening is formed by plating. It is preferable to have a two-stage structure of the formed metal post and a conductive resin post formed of a resin containing conductive particles.

Further, in the semiconductor device according to the present invention, it is preferable that the conductive post includes a conductive resin post made of a photosensitive conductive resin.

In order to achieve the above object, the first aspect of the present invention is described.
Is a method for manufacturing a semiconductor device in which semiconductor elements are flip-chip mounted face-down on a circuit board, wherein a photosensitive resin film is formed on a wafer on which a large number of the semiconductor elements are formed. Forming, by photolithography, forming openings in the photosensitive resin film corresponding to the input / output electrode terminal portions provided on the semiconductor element, and using the formed photosensitive resin film as a mask, A metal post is formed by plating on the input / output electrode terminal portion of the semiconductor element corresponding to the opening of the resin film, the wafer is divided and separated into individual semiconductor elements, and the individual semiconductor elements are face-down. And pressurizing and heating at a predetermined position on the circuit board for mounting.

In order to achieve the above object, the second aspect of the present invention
Is a method for manufacturing a semiconductor device in which semiconductor elements are flip-chip mounted face-down on a circuit board, wherein a photosensitive resin film is formed on a wafer on which a large number of the semiconductor elements are formed. Forming, by photolithography, forming openings in the photosensitive resin film corresponding to the input / output electrode terminals provided on the semiconductor element, and forming the openings of the semiconductor element corresponding to the openings in the photosensitive resin film. A conductive resin post is formed at the input / output electrode terminal, the wafer is divided into individual semiconductor elements, and the individual semiconductor elements are pressed down and heated at predetermined positions on a circuit board face down. It is characterized by processing and implementation.

In order to achieve the above object, a third aspect of the present invention is provided.
Is a method for manufacturing a semiconductor device in which semiconductor elements are flip-chip mounted face-down on a circuit board, wherein a photosensitive resin film is formed on a wafer on which a large number of the semiconductor elements are formed. Forming, by photolithography, forming openings in the photosensitive resin film corresponding to the input / output electrode terminals provided on the semiconductor element, and forming the openings of the semiconductor element corresponding to the openings in the photosensitive resin film. A metal post is formed as a first layer on the input / output electrode terminal portion by plating, and a conductive resin post is formed thereon as a second layer, thereby forming a conductive post having a two-layer structure. The wafer is divided into individual semiconductor elements, and the semiconductor elements are mounted face down in a predetermined position on a circuit board by applying pressure and heat.

In the second and third methods of manufacturing a semiconductor device, the conductive resin post is preferably formed by printing and filling a conductive paste.

In the second and third methods of manufacturing a semiconductor device, it is preferable that the conductive post is formed by patterning a photosensitive conductive resin by photolithography.

In the first to third methods of manufacturing a semiconductor device, the photosensitive resin film is preferably a semi-cured (B-staged) resin film.

In this configuration, it is preferable that the B-staged resin film is mainly composed of an acid anhydride-based or phenol-based epoxy resin.

In order to achieve the above object, the fourth aspect of the present invention
Is a method of manufacturing a semiconductor device in which a semiconductor element is flip-chip mounted face-down on a circuit board, and the semiconductor element is provided on an input / output electrode terminal portion on a wafer on which a large number of the semiconductor elements are formed. Forming protruding electrodes,
A semi-cured (B-stage) resin film is formed on the wafer, the wafer is divided and separated into individual semiconductor elements, and the semiconductor elements are applied face-down to predetermined positions on a circuit board. It is characterized by mounting by performing pressure and heat treatment.

According to the above configuration and method, when the semiconductor element is mounted on the circuit board side or after the mounting, pressure and heat treatment are performed, so that the B-staged resin film on the semiconductor element surface is once softened. After that, it is cured and adhered again, so that it functions as a sealing material for filling the gap between the semiconductor element and the circuit board. Therefore, the step of filling the sealing material or the step of attaching the anisotropic conductive film as in the related art can be eliminated, and the workability is greatly improved.

In addition, conventionally, it has been performed in a semiconductor mounting process.
In the process of forming a bump and filling a sealing material, a resin film serving as a sealing material and conductive posts (bumps) can be collectively formed in a semiconductor element manufacturing process, so that productivity can be improved and a semiconductor device can be improved. Can be manufactured at low cost.

Further, an inorganic filler (such as SiO ₂ ), which is a drawback when using the conventional anisotropic conductive film, enters between the conductive post and the electrode on the circuit board side, and hinders electrical connection. Is greatly reduced and reliability is greatly improved.

[0029]

Embodiments of the present invention will be described below with reference to the drawings. However, the present invention is not limited to the embodiments specifically described below.

(First Embodiment) A method for fabricating a semiconductor device and a semiconductor device according to a first embodiment of the present invention will be described below with reference to FIGS.

FIG. 1 is a sectional view showing the structure of the semiconductor device according to the first embodiment of the present invention. FIG. 2 is a partially enlarged view of FIG. FIG. 5 is a manufacturing process diagram of the semiconductor device. 1, 2, and 5, the same portions are denoted by the same reference numerals.

As shown in the figure, the semiconductor element 1 has a resin film 3 which has been semi-cured (hereinafter referred to as B-stage) except for the input / output electrode terminals 2, and has a B-stage resin. In the opening of the film 3, a metal post 5 (FIG. 2) is formed by plating as a conductive post 4 (FIG. 1).

A semiconductor device using the semiconductor element configured as described above can be manufactured, for example, as shown in FIGS. 5 (a) to 5 (f).

First, for example, a photosensitive epoxy resin is applied and formed as a resin film 3 on the surface of the semiconductor elements 1 (only one element is shown in FIG. 5) formed on a large number of wafers shown in FIG. After pre-baking to form a B stage (FIG. 5 (b)), the semiconductor element 1 is exposed and developed.
An opening 7 is formed in the resin film 3 corresponding to the input / output electrode terminal 2 (FIG. 5C). Using the B-staged resin film as a mask, a metal post 5 is formed in the opening 7 by electroplating or electroless plating (FIG. 5D). Examples of the resin constituting the photosensitive resin film 3 include cationic, acid anhydride or phenolic epoxy resins, BT resins,
A silicone resin or the like can be used, and a thermosetting epoxy resin is particularly preferable. The resin is not limited to one type, and the resin film 3 may be formed by using two or more types in combination.

As the metal post 5, for example, Au, C
A conductive metal such as u, Pd, Ni, Sn, and In can be used. As a common electrode when performing electroplating, a common bias electrode line (not shown) is provided in a cutting space between the semiconductor elements, and an input / output electrode terminal 2 of the semiconductor element 1 is provided therefrom.
There is a method such as connection to the Internet.

Next, the wafer is divided and the semiconductor elements 1 are individually cut out. As shown in FIG. 5 (e), the semiconductor elements are sucked and held face down on the surface of the pressurizing and heating head 8, and The metal posts 5 formed on the element 1 are aligned with the circuit board side terminals 10 and arranged on the circuit board 9. By applying pressure and heat to the pressurizing and heating head 8 in this state, the B-staged resin 3 is softened and bonded to the circuit board 9. Thus, the input / output electrode terminal 2 of the semiconductor element 1 and the circuit board side terminal 10 are electrically connected via the metal post 5. The processing conditions are appropriately determined depending on the size of the semiconductor element 1 and the characteristics of the resin film 3 which has been B-staged.
× 10 ^{4 to} 490 × 10 ⁴ Pa, temperature 150 to 350 ° C.,
The time is 1 to 60 seconds.

As described above, the semiconductor element and the semiconductor device of this embodiment can be manufactured.

The height of the metal post 5 formed by plating as the conductive post 4 is the same as the resin film thickness formed in the B stage in the drawing, but the material of the conductive post 4 and the material of the resin film 3 are shown. There is no problem if the characteristics are different.

(Second Embodiment) The method for fabricating the semiconductor element and the semiconductor device according to the present embodiment will be explained with reference to FIG. FIG. 3 is a partial sectional view of a semiconductor device according to a second embodiment of the present invention.

As shown in the figure, on the surface of the semiconductor element 1, a resin film 3 which is B-staged except for the portion of the input / output electrode terminal 2 is formed. A conductive resin post 6 is formed in the opening 7 (FIG. 5C) of the B-staged resin film 3.

A semiconductor device using the semiconductor element configured as described above can be manufactured, for example, as follows. First
As in the first embodiment, the B-staged resin film 3 having the opening 7 is formed on the semiconductor element 1. As a method of forming the conductive resin post 6, for example, the resin film 3
There is a method of printing or transferring a conductive resin paste using as a mask, filling the opening 7 with the conductive resin paste, and then heating or curing the paste. As the conductive resin paste, Ag, Cu, A
A conductive metal material such as gPd, Au, AgPt, Pd, and Ni, or a resin powder material coated with the metal is added. There is no problem in using either thermosetting or thermoplastic as the resin binder.

As a method of forming the conductive resin post 6, a pattern may be formed in the opening 7 of the B-staged resin film 3 by using a photosensitive conductive resin and a photolithography technique.

The semiconductor device 1 manufactured as described above
Is mounted on the circuit board 9 in the same manner as in the first embodiment.

(Third Embodiment) The method for fabricating the semiconductor element and the semiconductor device according to the present embodiment will be explained with reference to FIG. FIG. 4 is a partial cross-sectional view of a semiconductor device according to a third embodiment of the present invention.

As shown in the figure, on the surface of the semiconductor element 1, a resin film 3 which is B-staged except for the portion of the input / output electrode terminal 2 is formed, and an opening 7 (see FIG. 5 (c)), a metal post 5 and a conductive resin post 6 are formed by plating.

A semiconductor device using the semiconductor element configured as described above can be manufactured, for example, as follows. First
Similarly to the embodiment, after forming the B-staged resin film 3 having an opening on the semiconductor element 1, the metal post 5 is formed to be thinner than the resin film 3 by plating, and the remaining metal post 5 is formed. The conductive resin post 6 is formed on the portion by using the method of the second embodiment to form a conductive post having a two-stage structure.

The semiconductor device 1 manufactured as described above
Is mounted on the circuit board 9 in the same manner as in the first embodiment.

(Fourth Embodiment) The method for fabricating the semiconductor device according to the present embodiment will be explained with reference to FIG.
FIG. 6 is a manufacturing process diagram of the semiconductor device according to the fourth embodiment of the present invention.

As shown in the figure, bumps 11 (conductive posts) are formed on input / output electrode terminals 2 of a large number of semiconductor elements 1 formed on a wafer by, for example, a bump bonder or plating (FIG. 6 (a)). )), A resin film 12 serving as a sealing material is applied to the entire surface of the semiconductor element 1, and prebaked to make the resin film 12 into the B stage (FIG. 6B).

Next, similarly to the first embodiment, the wafer is divided and the semiconductor elements 1 are individually cut out, and the semiconductor elements 1 are sucked and held face-down on the surface of the pressure heating head 8. The bumps 11 formed on the element 1 are aligned with the circuit board side terminals 10 and are arranged on the circuit board 9. By applying pressure and heat to the pressure heating head 8 in this state, the B-staged resin film 3 is softened and adhesively bonded to the circuit board 9. The input / output electrode terminal 2 of the semiconductor element 1 and the circuit board side terminal 10 are electrically connected via a bump 11.

It is preferable that the height of the bump 11 is equal to or greater than the thickness of the resin film 3 which has been made into the B-stage. Even after the resin film 3 is formed, the tip of the bump 11 may be polished and flattened. Good.

[0052]

As described above, according to the method of manufacturing a semiconductor element and a semiconductor device of the present invention, a resin film which has been B-staged is formed on the surface of the semiconductor element in advance.
When the semiconductor element is mounted on the circuit board, the semiconductor element and the circuit board can be adhesively bonded by applying pressure and heating. Thereby, the conventional sealing material filling step or the anisotropic conductive film sticking step can be eliminated, and workability is greatly improved.

Further, the steps of forming a bump and filling a sealing material, which were conventionally performed in the semiconductor mounting step, are replaced by a B-staged resin film formed on the surface of the semiconductor element as a mask during the semiconductor element manufacturing process. By forming a conductive post by metal plating, printing or transfer of a conductive resin film or photolithography, or by forming a conductive post (bump) first and then forming a B-staged resin film. , Resin film and conductive post (bump) as sealing material
Can be easily and collectively formed on a wafer, so that productivity can be improved and a semiconductor device can be manufactured at low cost.

Furthermore, a drawback of using an anisotropic conductive film is that an inorganic filler (such as SiO ₂ ) enters between the conductive post and the electrode on the circuit board side to hinder electrical connection. Is greatly reduced and reliability is greatly improved.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view showing a configuration of a semiconductor device of the present invention.

FIG. 2 is a partial sectional view showing the structure of the semiconductor device according to the first embodiment of the present invention;

FIG. 3 is a partial sectional view showing a structure of a semiconductor device according to a second embodiment of the present invention;

FIG. 4 is a partial sectional view showing the structure of a semiconductor device according to a third embodiment of the present invention;

FIG. 5 is a process chart showing a method for manufacturing a semiconductor device using the semiconductor element according to the first to third embodiments of the present invention;

FIG. 6 is a process chart showing a method for manufacturing a semiconductor device using a semiconductor element according to a fourth embodiment of the present invention;

FIG. 7 is a partial process view showing a method for manufacturing a semiconductor device according to a conventional example.

FIG. 8 is a partial process chart showing a method for manufacturing a semiconductor device according to another conventional example.

[Explanation of symbols]

 REFERENCE SIGNS LIST 1 semiconductor element 2 input / output electrode terminal 3, 12 resin film 4 conductive post 5 metal post 6 conductive resin post 7 opening 8 pressure heating head 9 circuit board 10 circuit board side terminal 11 bump

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H01L 21/92 603C 604B 604E 23/12 L

Claims (15)

[Claims] 1. A semiconductor element to be flip-chip mounted face-down on a circuit board, comprising: a conductive post formed on an input / output electrode terminal of the semiconductor element; and a conductive post formed on a side on which the conductive post is formed. A semi-cured (B-staged) resin film formed on the surface of the semiconductor element. 2. The semiconductor element according to claim 1, wherein the resin film is a sealing material that fills a gap between the semiconductor element and the circuit board when mounting the semiconductor element on the circuit board. 3. The semiconductor device according to claim 1, wherein said resin film is mixed with inorganic insulating particles. 4. The resin film is made of a photosensitive resin, has an opening formed in a portion corresponding to the input / output electrode terminal portion by photolithography, and has a conductive film formed in the opening. The semiconductor device according to claim 1, wherein the post is a metal post formed by plating. 5. The resin film is made of a photosensitive resin, has an opening formed in a portion corresponding to the input / output electrode terminal portion by photolithography, and has the conductive film formed in the opening. The post is a conductive resin post formed of a resin containing conductive particles.
The semiconductor device according to any one of the above. 6. The resin film is made of a photosensitive resin, has an opening formed in a portion corresponding to the input / output electrode terminal portion by photolithography, and has a conductive film formed in the opening. 4. The semiconductor device according to claim 1, wherein the post has a two-stage structure of a metal post formed by plating and a conductive resin post formed of a resin containing conductive particles. 7. The method according to claim 1, wherein the conductive post includes a conductive resin post made of a photosensitive conductive resin.
The semiconductor device according to any one of claims 6 and 7. 8. A method for manufacturing a semiconductor device in which a semiconductor element is flip-chip mounted face-down on a circuit board, wherein a photosensitive resin film is formed on a wafer on which a large number of the semiconductor elements are formed. Thus, an opening corresponding to the input / output electrode terminal provided on the semiconductor element is formed in the photosensitive resin film, and the opening of the photosensitive resin film is formed using the formed photosensitive resin film as a mask. Forming metal posts by plating on the input / output electrode terminals of the semiconductor elements corresponding to the above, dividing the wafer into individual semiconductor elements, and face-down the individual semiconductor elements to form a circuit board. A method for manufacturing a semiconductor device, comprising: performing mounting by applying pressure and heat to a predetermined position. 9. A method of manufacturing a semiconductor device in which semiconductor elements are flip-chip mounted face-down on a circuit board, wherein a photosensitive resin film is formed on a wafer on which a large number of the semiconductor elements are formed. Accordingly, an opening corresponding to the input / output electrode terminal provided on the semiconductor element is formed in the photosensitive resin film, and the input / output electrode terminal of the semiconductor element corresponding to the opening of the photosensitive resin film. Forming a conductive resin post on the substrate, dividing the wafer into individual semiconductor elements, and mounting the individual semiconductor elements by applying pressure and heat to predetermined positions on a circuit board face down. A method of manufacturing a semiconductor device. 10. A method of manufacturing a semiconductor device in which semiconductor elements are flip-chip mounted face-down on a circuit board, wherein a photosensitive resin film is formed on a wafer on which a large number of the semiconductor elements are formed. Accordingly, an opening corresponding to the input / output electrode terminal provided on the semiconductor element is formed in the photosensitive resin film, and the input / output electrode terminal of the semiconductor element corresponding to the opening of the photosensitive resin film. After forming a metal post by plating as a first layer, a conductive resin post is formed thereon as a second layer, thereby forming a conductive post having a two-layer structure, and dividing the wafer. Manufacturing a semiconductor device, wherein the semiconductor device is separated into individual semiconductor elements, and the semiconductor elements are mounted face to face at predetermined positions on a circuit board by applying pressure and heat. Method. 11. The method according to claim 9, wherein the conductive resin post is formed by printing and filling a conductive paste. 12. The conductive post is formed by patterning a photosensitive conductive resin by photolithography.
Or the method of manufacturing a semiconductor device according to item 10. 13. The method of manufacturing a semiconductor device according to claim 8, wherein the photosensitive resin film is a semi-cured (B-staged) resin film. 14. The method according to claim 13, wherein the B-staged resin film is mainly composed of an acid anhydride-based or phenol-based epoxy resin. 15. A method of manufacturing a semiconductor device in which semiconductor elements are flip-chip mounted face-down on a circuit board, wherein a projecting electrode is formed on an input / output electrode terminal on a wafer on which a large number of the semiconductor elements are formed. Forming a semi-cured (B-staged) resin film on the wafer, dividing the wafer into individual semiconductor elements, and placing the semiconductor elements face down to predetermined positions on a circuit board. A method for manufacturing a semiconductor device, wherein the semiconductor device is mounted by performing pressure and heat treatments.