JPH05235213A - Semiconductor device and method for forming heat radiating path of semiconductor device - Google Patents

Abstract

PURPOSE:To provide the method for manufacturing a semiconductor device which can fully radiate the heat generated by a semiconductor element even when the consumption power of the semiconductor element increases and to provide the method for manufacturing a radiating path of the semiconductor device. CONSTITUTION:A semiconductor element 3 which has a protruding electode 4 installed on the surface is face-down-mounted on a semiconductor mounting substrate 1 having an electrode terminal on its surface. Nextly, a recessed section 7 of a cap 5 which is attached tightly to the semiconductor mounting substrate l is filled with a spherical substance 8 having an excellent elasticity and heat conductivity and resin 9 having a good heat curing property and heat conductivity. After that, the cap 5 is attached tightly to the surface of the semiconductor mounting substrate 1 to bring the spherical substance 8 and the resin 9 into close contact with the semiconductor element 3 and a projection 6 of the cap 5 which face each other.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device in which a semiconductor such as an IC chip having a large number of high density connection terminals is mounted face down on a semiconductor mounting substrate, and a method for forming a heat dissipation path of the semiconductor device.

[0002]

2. Description of the Related Art With the increase in speed and multifunction of electronic equipment, the speed and density of integrated circuits used in electronic circuits of electronic equipment have been increasing. As a result, higher integration and higher density of semiconductor elements have progressed, and based on this higher integration and higher density of semiconductor elements, there has been a strong demand for a technology that corresponds to an increase in the number of external connection terminals and high-density mounting. There is.

As a mounting method to meet this demand, conventionally, a method has been adopted in which bumps, which are convex projecting electrodes, are projected on the electrode terminals of a semiconductor element and the semiconductor element is faced down on a semiconductor mounting substrate. .. However, in this mounting method, since the contact area between the semiconductor element and the semiconductor mounting board is extremely small, the thermal resistance between the semiconductor element and the semiconductor mounting board increases, and when a semiconductor element with high power consumption is used, , I had to consider a new heat dissipation path.

Therefore, as a technique for dealing with this problem, a method of filling a resin having good thermal conductivity between the semiconductor element and the cap has been conventionally considered.

[0005]

As described above, a method of filling a resin having a good thermal conductivity between the semiconductor element and the cap has been considered in the past, but a resin having a sufficiently low thermal resistance is used. Therefore, if the power consumption of the semiconductor element increases, the method of filling the resin with good thermal conductivity between the semiconductor element and the cap can sufficiently dissipate the heat generated from the semiconductor element. There wasn't.

The present invention has been made in view of the above, and provides a semiconductor device and a method for forming a heat dissipation path for the semiconductor device, which can sufficiently dissipate the heat generated from the semiconductor device even when the power consumption of the semiconductor device increases. The purpose is to do.

[0007]

In order to achieve the above-mentioned object, the present invention has a semiconductor mounting board having electrode terminals provided on the surface thereof, and a protruding electrode which is overlapped with the electrode terminals provided on the surface of the semiconductor mounting board. A semiconductor element that is mounted face down on a substrate, a cap that is crimped onto the surface of the semiconductor mounting substrate, a protrusion that is provided on the inner surface of the cap and that is located directly above the semiconductor element, and has excellent elasticity and thermal conductivity. A spherical substance filled in the recess of the protrusion and interposed between the semiconductor element and the cap, and a spherical substance excellent in thermosetting and thermal conductivity and interposed between the semiconductor element and the cap in the recess of the protrusion. It is characterized in that it is provided with a resin.

In order to achieve the above-mentioned object in the present invention, a semiconductor element having projecting electrodes on its surface is mounted face down on a semiconductor mounting substrate having electrode terminals on its surface, and then the semiconductor element is mounted. The concave portion of the projection of the cap that is crimped to the semiconductor mounting board is filled with a spherical substance having excellent elasticity and thermal conductivity and a resin having excellent thermosetting and thermal conductivity, and then the semiconductor mounting board It is characterized in that the cap is pressure-bonded to the surface of, and the spherical substance and the resin are pressed against the projections of the semiconductor element and the cap which face each other.

[0009]

According to the present invention, the heat generated from the semiconductor element is conducted to the cap through the spherical substance from the resin that is pressed against the semiconductor element, and then is smoothly dissipated to the outside. The power generated by the semiconductor element can be sufficiently dissipated even when the power consumption of the semiconductor is significantly increased, and the adhesion between the electrode terminal and the protruding electrode that are mutually polymerized by the elastic pressing force of the spherical substance and the resin can be improved. It is possible to greatly increase.

[0010]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described in detail below based on an embodiment shown in FIGS. A semiconductor device and a method of forming a heat dissipation path for a semiconductor device according to the present invention include face-down mounting of a semiconductor element 3 having projecting electrodes 4 projecting on the surface thereof on a semiconductor mounting substrate 1 having electrode terminals provided on the surface thereof. , The concave portion 7 of the cap 5 to be pressure-bonded to the semiconductor mounting substrate 1 is filled with the spherical substance 8 having excellent elasticity and thermal conductivity and the resin 9 having excellent thermosetting property and thermal conductivity, and thereafter, By pressing the cap 5 onto the surface of the semiconductor mounting substrate 1,
The semiconductor element 3 and the protrusion 6 of the cap 5 facing each other,
The spherical substance 8 and the resin 9 are pressed against each other.

As shown in FIGS. 1 and 4, the semiconductor mounting substrate 1 is made of ceramics or the like, and a printed pattern (not shown) is printed on the surface of the substrate and a plurality of electrode terminals (not shown) are arranged. A plurality of lead wires 2 are connected to both sides.

On the other hand, as shown in FIGS. 2 and 3, the semiconductor element 3 such as GaAs / IC has its surface (circuit forming surface).
A plurality of projecting electrodes (bumps) 4 are provided on the surface of the semiconductor mounting substrate 1 so that the projecting electrodes 4 are connected and polymerized to the plurality of electrode terminals, respectively.

Further, as shown in FIGS. 1 to 4, the cap 5 has a substantially concave cross section, and a plurality of protrusions 6 are provided on the inner flat surface thereof at predetermined intervals. The flat surfaces of the plurality of protrusions 6 are respectively provided with recesses 7 that perform a storage function, and are pressed to both sides of the semiconductor mounting substrate 1 so as to cover the semiconductor elements 3 and the plurality of semiconductor elements 3 are formed. The protrusions 6 are located directly above.

On the other hand, the spherical substance 8 has a diameter of 1 to 1.
Consists of a spherical material body composed of about 5 mm silicon rubber spheres and the like with excellent elasticity and thermal conductivity, and a coating material composed of soft gold etc. having good thermal conductivity and deposited on the surface of the spherical material body. Then, a large number of particles are filled in the recess 7 so as to fill the upper surface of the opening (see FIG. 2).

Further, the resin 9 is composed of an epoxy resin or the like having excellent thermosetting property and thermal conductivity, and a large number of spherical substances 8 inside the recess 7 are stacked and filled so as to be slightly raised from the upper surface of the opening (see FIG. 3).

Next, a method of forming a heat radiation path for a semiconductor device according to the present invention will be described with reference to FIGS. First, although not shown, a plurality of semiconductor elements 3 are mounted face down on the semiconductor mounting substrate 1, and the protruding electrodes 4 are connected and polymerized to the plurality of electrode terminals of the semiconductor mounting substrate 1, respectively. Then, as shown in FIG. 2, a plurality of spherical substances 8 are filled in the plurality of recesses 7 of the cap 5 so as to fill the upper surface of the opening. Next, as shown in FIG. 3, a large number of resins 9 are stacked and filled in each of the spherical substances 8 in the plurality of recesses 7 so as to slightly rise from the upper surface of the opening. Finally, as shown in FIG. 4, the semiconductor mounting substrate 1 is arranged on both upper sides of the cap 5 in a face-down manner, the back surface of the semiconductor element 3 is superposed on the resin 9, and then the upper side of both sides of the cap 5 is applied while applying pressure. Semiconductor mounting board 1
Is pressed to connect the semiconductor element 3 and the cap 5 while interposing and compressing the resin 9 and the spherical substance 8, and at the same time as the pressing, heat is applied to the resin 9 to solidify it to form a heat dissipation path of the semiconductor device. The back surface of the semiconductor element 3 and the recess 7
The shortest distance is 500 μm.

According to the above construction, when heat is generated from the semiconductor element 3, the generated heat is conducted to the cap 5 via the resin 9 and the spherical substance 8 connected from the semiconductor element 3 which is a heat radiation path, Then, the heat is radiated smoothly and sufficiently to the outside. Therefore, even when the power consumption of the semiconductor element 3 is significantly increased, the heat generated from the semiconductor element 3 can be sufficiently radiated. Furthermore, since the spherical material 8 and the resin 9 that are intervened and compressed exert a springing action, it can be expected that an appropriate pressure is applied to the semiconductor element 3, and the adhesion between the electrode terminal and the protruding electrode 4 that are mutually polymerized is improved. It is possible to greatly increase.

[0018]

As described above, according to the present invention, the heat generated from the semiconductor element is conducted to the cap from the semiconductor element, which is the heat dissipation path, through the resin and the spherical substance, and then smoothly and externally. Since the heat is sufficiently radiated, there is a remarkable effect that the heat generated from the semiconductor element can be sufficiently and smoothly radiated even when the power consumption of the semiconductor element is significantly increased. Moreover, since the spherical material and the resin that are interposed and compressed exert an elastic force urging action, it is possible to exert an appropriate pressure on the semiconductor element, and further, the adhesion and reliability of the electrode terminal and the protruding electrode that are polymerized with each other are improved. There is a remarkable effect that it can be greatly increased. Furthermore, since the contact adhesion between the electrode terminal and the protruding electrode can be greatly increased, there is a remarkable effect that productivity in the mounting process can be expected to be significantly improved.

[Brief description of drawings]

FIG. 1 is a vertical sectional view showing an embodiment of a semiconductor device and a method for forming a heat dissipation path of the semiconductor device according to the present invention.

FIG. 2 is a vertical cross-sectional view showing a step of filling a spherical material in the semiconductor device and the method for forming a heat dissipation path of the semiconductor device according to the present invention.

FIG. 3 is a vertical cross-sectional view showing a resin filling step in the semiconductor device and the method for forming a heat dissipation path of the semiconductor device according to the present invention.

FIG. 4 is a vertical cross-sectional view showing a pressure bonding step of the semiconductor mounting substrate and the cap in the semiconductor device and the heat dissipation path forming method of the semiconductor device according to the present invention.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Semiconductor mounting substrate, 3 ... Semiconductor element, 4 ... Projection electrode (bump), 5 ... Cap, 6 ... Projection part, 7 ... Recessed part, 8
… Spherical substance, 9… resin.

Claims (2)

[Claims] 1. A semiconductor mounting board having electrode terminals provided on its surface, a semiconductor element projectingly provided on its surface with projecting electrodes that overlap with the electrode terminals and mounted facedown on the semiconductor mounting board, and a semiconductor mounting board of the semiconductor mounting board. A cap that is crimped to the surface, a protrusion that is provided on the inner surface of the cap and that is located immediately above the semiconductor element, and a gap between the semiconductor element and the cap that is excellent in elasticity and thermal conductivity and that is filled in the concave portion of the protrusion. A semiconductor device comprising: a spherical substance interposed between the semiconductor element and a cap, which is excellent in thermosetting property and thermal conductivity and is filled in the recessed portion of the protrusion and interposed between the semiconductor element and the cap. 2. A semiconductor mounting substrate having electrode terminals provided on the surface thereof, a semiconductor element having projecting electrodes protruding from the surface is face-down mounted, and then in a protrusion of a cap to be crimped to the semiconductor mounting substrate. The dents are filled with a spherical substance having excellent elasticity and thermal conductivity, and also filled with a resin having excellent thermosetting and thermal conductivity, and then a cap is pressure-bonded to the surface of the semiconductor mounting substrate to face each other. A method for forming a heat dissipation path of a semiconductor device, characterized in that the spherical substance and a resin are pressed against the protruding portion of the semiconductor element and the cap.