JP2002368030A - Resin-sealed semiconductor device and method of manufacturing the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain a resin-sealed semiconductor device of high reliability without using an underfill resin. SOLUTION: In the resin-sealed semiconductor device, a wiring terminal at a wiring board and an external terminal (a pad) at a semiconductor chip are electrically connected with a metal ball, and the semiconductor chip, the gap between the wiring board and the semiconductor chip and the metal ball part are resin-sealed by transfer molding. A plurality of through holes are formed in the central part of the wiring board.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin-encapsulated semiconductor device and a method of manufacturing the same, and more particularly, to a semiconductor device using a chip-on-film type package or a flip-chip type package. The present invention relates to a technology that is effective when applied to a semiconductor device.

[0002]

2. Description of the Related Art Conventionally, chip-on-film (Chip)
A method of manufacturing a semiconductor device using an On Film package or a flip chip package or a flip chip ball grid Arey (BGA) is a method of manufacturing a semiconductor device using a wiring terminal and a semiconductor chip on a wiring substrate. A semiconductor chip is mounted by electrically connecting external terminals (pads) with metal balls, and an underfill resin (liquid resin) having good permeability is applied to a gap between the wiring board and the semiconductor chip. The semiconductor chip and the metal ball portion are sealed by potting a molding material (epoxy resin), and a metal ball (external device connection terminal) for electrically connecting to an external device is provided on the back surface of the wiring board. Has formed.

[0003]

SUMMARY OF THE INVENTION As a result of studying the above prior art, the present inventor has found the following problems. (1) The gap between the wiring board and the semiconductor chip is 70 μm.
If it is less than m, the underfill resin cannot be sufficiently filled only by coating. (2) It takes a long time to cure the underfill resin and the potting material (epokiresin) that has been potted thereafter, resulting in poor productivity. (3) The material cost of the underfill resin having good permeability and the molding material (epoxy resin) is high. (4) The reliability of the package is low because the method of filling the underfill resin is a coating / low pressure injection method.

An object of the present invention is to provide a technique capable of obtaining a highly reliable resin-encapsulated semiconductor device without using an underfill resin. The above and other objects and novel features of the present invention will become apparent from the description of the present specification and the accompanying drawings.

[0005]

SUMMARY OF THE INVENTION Among the inventions disclosed in the present application, the outline of a representative one will be briefly described.
It is as follows.

According to a first aspect of the invention, a wiring terminal of a wiring board is electrically connected to an external terminal (pad) of a semiconductor chip by a metal ball, and the semiconductor chip, a gap between the wiring substrate and the semiconductor chip, and a metal ball are provided. In a resin-encapsulated semiconductor device in which a portion is resin-encapsulated by a transfer molding method, a plurality of through holes are provided in a central portion of the wiring substrate.

According to a second aspect of the present invention, a plurality of through holes are formed in a central portion of the wiring board, and the wiring terminals and the external terminals (pads) of the semiconductor chip are electrically connected to the wiring board with metal balls. Mounting a semiconductor chip by electrically connecting the semiconductor chip, a step of resin-sealing the semiconductor chip, a gap between the wiring board and the semiconductor chip, and a metal ball portion by a transfer mode method, and forming an external device on a back surface of the wiring board. Forming a terminal for external device connection for electrical connection with the semiconductor device.

The point of the present invention is that a plurality of through-holes are provided at the center of a wiring board to be used, and by using a transfer mode, resin is pressed into a gap between the wiring board and the semiconductor chip to cause a defective filling ( The occurrence of voids is reduced, so that the reliability can be improved.

In addition, since the underfill resin and the potting resin are not used by using the transfer mode method, it is possible to manufacture at low cost and shorten the manufacturing period.

Hereinafter, the present invention will be described in detail with reference to the drawings together with embodiments (examples). In all the drawings for explaining the embodiments, parts having identical functions are given same symbols and their repeated explanation is omitted.

[0011]

(Embodiment 1) FIG. 1 is a partially cutaway perspective view of a flip-chip type semiconductor device according to Embodiment 1 of the present invention, and FIG. 2 is a sectional view taken along line AA 'of FIG. FIG.

As shown in FIGS. 1 and 2, a flip chip BGA type semiconductor device according to a first embodiment has wiring terminals of a wiring board 1 provided with a plurality of through holes (air vent holes) 11 at the center. An external terminal (pad) of the semiconductor chip 2 is electrically connected to the semiconductor chip 2 by a metal ball.
The gap between the wiring board 1 and the semiconductor chip 2 and the metal ball portion 3 are sealed by forming a normal sealing resin (resin) 4 by a transfer mode method, and electrically connected to an external device on the back surface of the wiring board. An external device connection terminal (for example, a solder bump) 5 for connection is provided.

The wiring substrate 1 has a protective film 1B on its surface.
This is a printed circuit board on which the two-layer wiring 1A is formed, and a plurality of through holes 11 are provided in the center of the printed circuit board before assembly. 1B is a protective film of the wiring board 1.

The gap between the wiring board 1 and the semiconductor chip 2 is 30 μm to 50 μm. Although a large number of metal balls are provided in this gap, a predetermined injection pressure is applied when sealing with the ordinary sealing resin 4 by the transfer mode method. The sealing resin 4 is easily injected into the plurality of through-holes 11 provided in the substrate, and gas is exhausted from the through-holes 11.

As described above, a plurality of through holes 11 are provided in the center of the wiring board 1 to be used, and the transfer board method is used to seal the normal sealing resin 4 so that the wiring board 1 and the semiconductor chip 2 are formed. The normal sealing resin 4 is press-fitted into the gap between the first and second portions to reduce defective filling (such as generation of voids), so that reliability can be improved.

Next, a method of manufacturing the resin-sealed semiconductor device of the first embodiment will be described. FIG. 3 is a cross-sectional view illustrating each step of the method for manufacturing the resin-encapsulated semiconductor device according to the first embodiment.

As shown in FIG. 3A, before assembling,
In advance, a plurality of through holes (air vent holes) 11 are formed in the center of the printed circuit board (wiring board) 1 on which the two-layer wiring 1A is formed. A plurality of through holes 1
On the printed circuit board 1 on which the wiring terminals 1 are formed, the wiring terminals and the external terminals (pads) of the semiconductor chip 2 are placed on metal balls 3.
The semiconductor chip is mounted by being electrically connected by A. Then, a heat sink 13 is bonded to the upper surface of the semiconductor chip 2 with an adhesive 12.

Next, as shown in FIG. 3B, the semiconductor chip 2, the gap between the printed circuit board 1 and the semiconductor chip 2, and the metal ball portion 3 are formed by a transfer mode method using an ordinary sealing resin (resin). 4 is formed. At the time of resin encapsulation by the transfer mode method, a laminate film 14 is stuck on the back surface of the
5A, and an ordinary sealing resin 4 is injected with the semiconductor device sandwiched between the lower mold 15A and the upper mold 15B.

Next, as shown in FIG. 3 (c), the lower die 15A and the upper die 15B are removed, and unnecessary ordinary sealing resin is removed to obtain a flip chip BGA type semiconductor device. Manufacturing ends.

The gap between the wiring board 1 and the semiconductor chip 2 is 30 μm to 50 μm. By applying a predetermined pressure to the ordinary sealing resin 4 by the transfer mode method and injecting the gap into the gap, the drawing is performed. As shown in FIG. 4, a plurality of through holes 11 provided in the center of the wiring board 1 are provided.
The ordinary sealing resin 4 is easily injected,
Gas is also exhausted from this through hole 11. Thereby, the defective filling of the ordinary sealing resin 4 (the occurrence of voids or the like) is reduced, so that the reliability can be improved.

Further, by using the transfer mode method, since the ordinary sealing resin 4 is used without using the underfill resin and the potting resin, the manufacturing can be performed at low cost and the manufacturing period can be shortened. be able to.

(Embodiment 2) FIG. 5 is a partially cutaway perspective view of a flip chip BGA type semiconductor device according to Embodiment 2 of the present invention, and FIG. 6 is a sectional view taken along line AA 'of FIG. is there.

As shown in FIGS. 1 and 2, the flip chip BGA type semiconductor device according to the second embodiment has wiring terminals of a wiring board 1 provided with a plurality of through-holes 11 at the center and external parts of the semiconductor chip 2. Terminals (pads) are electrically connected with metal balls, and the semiconductor chip 2, the gap between the wiring board 1 and the semiconductor chip 2, and the metal ball portions 3 are formed with a normal sealing resin 4 by a transfer mode method. And external device connection terminals (for example, solder bumps) 5 for electrically connecting to an external device are provided on the back surface of the wiring substrate.

The wiring board 1 is a printed board on which a two-layer wiring 1A is formed, and a plurality of through holes 11 are provided in the center thereof before assembly.

The gap between the wiring board 1 and the semiconductor chip 2 is 30 μm to 50 μm. Although a large number of metal balls are provided in this gap, a predetermined injection pressure is applied when sealing with the ordinary sealing resin 4 by the transfer mode method. The sealing resin 4 is easily injected into the plurality of through-holes 11 provided in the substrate, and gas is exhausted from the through-holes 11.

As described above, a plurality of through-holes 11 are provided at the center of the wiring board 1 to be used, and by using the transfer mode method for sealing the ordinary sealing resin 4, the wiring board 1 is formed.
The normal sealing resin 4 is press-fitted into the gap between the semiconductor chip 2 and the semiconductor chip 2 to reduce defective filling (such as generation of voids), so that reliability can be improved.

Next, a method of manufacturing the resin-sealed semiconductor device of the second embodiment will be described. FIG. 7 is a cross-sectional view illustrating each step of the method for manufacturing the resin-encapsulated semiconductor device according to the first embodiment.

As shown in FIG. 7A, before assembling,
In advance, a plurality of through holes 11 are formed in the center of the printed circuit board (wiring board) 1 on which the two-layer wiring 1A is formed. On the printed circuit board 1 in which a plurality of through holes 11 are formed in the center, the wiring terminals and the external terminals (pads) of the semiconductor chip 2 are electrically connected by metal balls 3A to mount the semiconductor chip. .

Next, as shown in FIG. 7B, an ordinary sealing resin 4 is formed on the semiconductor chip 2, the gap between the printed board 1 and the semiconductor chip 2, and the metal ball portion 3 by a transfer mode method. I do. The step of resin sealing by the transfer mode method is performed in the same manner as in the first embodiment.

Next, solder bumps (external device connection terminals) 5 for electrically connecting to an external device are formed on the back surface of the wiring board 1 to obtain a flip chip BGA type semiconductor device.

The gap between the wiring board 1 and the semiconductor chip 2 is 30 μm to 50 μm, and the gap is injected into the gap by applying a predetermined pressure to the ordinary sealing resin 4 by a transfer mode method. The gas is easily injected into the plurality of through holes 11 provided at the center of the wiring board 1, and gas is exhausted from the through holes 11. Thereby, the defective filling of the ordinary sealing resin 4 (the occurrence of voids or the like) is reduced, so that the reliability can be improved.

Further, by using the transfer mode method, since the ordinary sealing resin 4 is used without using the underfill resin and the potting resin, the manufacturing can be performed at low cost and the manufacturing period can be shortened. be able to.

As described above, the present invention has been specifically described based on the above-described embodiment. However, the present invention is not limited to the above-described embodiment, and may be variously modified without departing from the gist thereof. Of course.

[0034]

The effects obtained by typical ones of the inventions disclosed in the present application will be briefly described as follows.

According to the present invention, a plurality of through holes (air vent holes) provided in the central portion of the wiring board 1 are formed by injecting ordinary sealing resin under a predetermined pressure.
The gas is also easily exhausted from this through hole. Thereby, the defective filling of the ordinary sealing resin (such as generation of voids) is reduced, so that the reliability can be improved.

Also, by using the transfer mode method, since an ordinary sealing resin is used without using an underfill resin and a potting resin, it can be manufactured at low cost, and the manufacturing period can be shortened. Can be.

[Brief description of the drawings]

FIG. 1 is a partially cutaway perspective view of a flip chip BGA type semiconductor device according to a first embodiment of the present invention.

FIG. 2 is a cross-sectional view taken along line A-A ′ of FIG.

FIG. 3 is a cross-sectional view illustrating each step of the method for manufacturing the resin-encapsulated semiconductor device according to the first embodiment.

FIG. 4 is an enlarged sectional view of a main part in the step of FIG. 3;

FIG. 5 is a partially cutaway perspective view of a flip chip BGA type semiconductor device according to a second embodiment of the present invention.

FIG. 6 is a sectional view taken along line A-A ′ of FIG. 5;

FIG. 7 is a cross-sectional view of each step of the method for manufacturing the resin-encapsulated semiconductor device according to the second embodiment.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Wiring board 1A ... 2 layer wiring 1B ... Protective film of wiring board 2 ... Semiconductor chip 3 ... Metal ball part 4 ... Normal sealing resin (resin) 5 ... Terminal for external device connection (solder bump) 11 ... Through-hole (Air vent hole) 12 ... Adhesive 13 ... Heat radiation plate 14A ... Laminated film 15A ... Mold lower mold 15B ... Mold upper mold

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Fukumi Shimizu, 3-3-2, Fujibashi, Ome-shi, Tokyo Within Hitachi Tokyo Electronics Co., Ltd. (72) Kenichi Imura 5-2-1, Josuihoncho, Kodaira-shi, Tokyo No. F-term in Hitachi Semiconductor Group 5F061 AA01 BA03 CA21

Claims (2)

[Claims] A wiring terminal of a wiring board is electrically connected to an external terminal (pad) of a semiconductor chip by a metal ball, and the semiconductor chip, a gap between the wiring substrate and the semiconductor chip, and a metal ball portion are transfer-molded. A resin-sealed semiconductor device, wherein a plurality of through holes are provided in a central portion of the wiring board. 2. A step of forming a plurality of through holes in a central portion of a wiring board, and electrically connecting the wiring terminals and external terminals (pads) of a semiconductor chip on the wiring board with metal balls. Mounting the semiconductor chip, and the step of resin-sealing the semiconductor chip, the gap between the wiring board and the semiconductor chip, and the metal ball portion by a transfer mode method,
Forming a terminal for external device connection for electrical connection with an external device on the back surface of the wiring substrate.