JPS5932131A - Ｘ線露光転写法および転写用マスク - Google Patents
Ｘ線露光転写法および転写用マスクInfo
- Publication number
- JPS5932131A JPS5932131A JP57142117A JP14211782A JPS5932131A JP S5932131 A JPS5932131 A JP S5932131A JP 57142117 A JP57142117 A JP 57142117A JP 14211782 A JP14211782 A JP 14211782A JP S5932131 A JPS5932131 A JP S5932131A
- Authority
- JP
- Japan
- Prior art keywords
- mask
- ray
- exposure
- thin film
- distance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 24
- 239000010409 thin film Substances 0.000 claims abstract description 28
- 238000012546 transfer Methods 0.000 claims description 45
- 238000005530 etching Methods 0.000 claims description 16
- 230000005855 radiation Effects 0.000 claims description 15
- 230000002093 peripheral effect Effects 0.000 claims description 8
- 230000005540 biological transmission Effects 0.000 claims description 7
- 238000003892 spreading Methods 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 4
- 239000002184 metal Substances 0.000 abstract description 3
- 229910052751 metal Inorganic materials 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 238000010521 absorption reaction Methods 0.000 abstract description 2
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 abstract 3
- 230000000717 retained effect Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 22
- 239000010931 gold Substances 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000012545 processing Methods 0.000 description 5
- 241000257465 Echinoidea Species 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 229910000831 Steel Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013256 coordination polymer Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 231100000989 no adverse effect Toxicity 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57142117A JPS5932131A (ja) | 1982-08-18 | 1982-08-18 | Ｘ線露光転写法および転写用マスク |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57142117A JPS5932131A (ja) | 1982-08-18 | 1982-08-18 | Ｘ線露光転写法および転写用マスク |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61109500A Division JPS621231A (ja) | 1986-05-15 | 1986-05-15 | Ｘ線露光転写用マスク |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5932131A true JPS5932131A (ja) | 1984-02-21 |
| JPH0368531B2 JPH0368531B2 (en, 2012) | 1991-10-28 |
Family
ID=15307797
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57142117A Granted JPS5932131A (ja) | 1982-08-18 | 1982-08-18 | Ｘ線露光転写法および転写用マスク |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5932131A (en, 2012) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60198726A (ja) * | 1984-03-23 | 1985-10-08 | Hitachi Ltd | Ｘ線露光装置の露光量調整方法と装置 |
| JPH04263416A (ja) * | 1991-02-18 | 1992-09-18 | Nippon Telegr & Teleph Corp <Ntt> | Ｘ線マスク |
| US6403475B1 (en) * | 1999-06-18 | 2002-06-11 | Hitachi, Ltd. | Fabrication method for semiconductor integrated device |
| US11156123B2 (en) | 2017-10-30 | 2021-10-26 | Mitsubishi Heavy Industries Engine & Turbocharger, Ltd. | Turbocharger |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5720434A (en) * | 1980-07-11 | 1982-02-02 | Mitsubishi Electric Corp | X-ray exposure transferring method and transferring apparatus therefor |
| JPS5745235A (en) * | 1980-09-02 | 1982-03-15 | Fujitsu Ltd | Exposure by x-ray |
-
1982
- 1982-08-18 JP JP57142117A patent/JPS5932131A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5720434A (en) * | 1980-07-11 | 1982-02-02 | Mitsubishi Electric Corp | X-ray exposure transferring method and transferring apparatus therefor |
| JPS5745235A (en) * | 1980-09-02 | 1982-03-15 | Fujitsu Ltd | Exposure by x-ray |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60198726A (ja) * | 1984-03-23 | 1985-10-08 | Hitachi Ltd | Ｘ線露光装置の露光量調整方法と装置 |
| JPH04263416A (ja) * | 1991-02-18 | 1992-09-18 | Nippon Telegr & Teleph Corp <Ntt> | Ｘ線マスク |
| US6403475B1 (en) * | 1999-06-18 | 2002-06-11 | Hitachi, Ltd. | Fabrication method for semiconductor integrated device |
| US11156123B2 (en) | 2017-10-30 | 2021-10-26 | Mitsubishi Heavy Industries Engine & Turbocharger, Ltd. | Turbocharger |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0368531B2 (en, 2012) | 1991-10-28 |
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