JPS5931072A - 高移動度電界効果トランジスタ - Google Patents

高移動度電界効果トランジスタ

Info

Publication number
JPS5931072A
JPS5931072A JP57141047A JP14104782A JPS5931072A JP S5931072 A JPS5931072 A JP S5931072A JP 57141047 A JP57141047 A JP 57141047A JP 14104782 A JP14104782 A JP 14104782A JP S5931072 A JPS5931072 A JP S5931072A
Authority
JP
Japan
Prior art keywords
region
doped
semiconductor
semiconductor layer
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57141047A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0371775B2 (cs
Inventor
Takayuki Sugata
孝之 菅田
Yoshifumi Takanashi
高梨　良文
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP57141047A priority Critical patent/JPS5931072A/ja
Publication of JPS5931072A publication Critical patent/JPS5931072A/ja
Publication of JPH0371775B2 publication Critical patent/JPH0371775B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/472—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having lower bandgap active layer formed on top of wider bandgap layer, e.g. inverted HEMT

Landscapes

  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP57141047A 1982-08-16 1982-08-16 高移動度電界効果トランジスタ Granted JPS5931072A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57141047A JPS5931072A (ja) 1982-08-16 1982-08-16 高移動度電界効果トランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57141047A JPS5931072A (ja) 1982-08-16 1982-08-16 高移動度電界効果トランジスタ

Publications (2)

Publication Number Publication Date
JPS5931072A true JPS5931072A (ja) 1984-02-18
JPH0371775B2 JPH0371775B2 (cs) 1991-11-14

Family

ID=15283010

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57141047A Granted JPS5931072A (ja) 1982-08-16 1982-08-16 高移動度電界効果トランジスタ

Country Status (1)

Country Link
JP (1) JPS5931072A (cs)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61280674A (ja) * 1985-06-06 1986-12-11 Nec Corp 半導体装置
JPS62199049A (ja) * 1986-02-27 1987-09-02 Hitachi Ltd 半導体装置
US4908325A (en) * 1985-09-15 1990-03-13 Trw Inc. Method of making heterojunction transistors with wide band-gap stop etch layer
US4987462A (en) * 1987-01-06 1991-01-22 Texas Instruments Incorporated Power MISFET
US5091759A (en) * 1989-10-30 1992-02-25 Texas Instruments Incorporated Heterostructure field effect transistor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55132074A (en) * 1979-04-02 1980-10-14 Max Planck Gesellschaft Hetero semiconductor and method of using same

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55132074A (en) * 1979-04-02 1980-10-14 Max Planck Gesellschaft Hetero semiconductor and method of using same

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61280674A (ja) * 1985-06-06 1986-12-11 Nec Corp 半導体装置
US4908325A (en) * 1985-09-15 1990-03-13 Trw Inc. Method of making heterojunction transistors with wide band-gap stop etch layer
JPS62199049A (ja) * 1986-02-27 1987-09-02 Hitachi Ltd 半導体装置
US4987462A (en) * 1987-01-06 1991-01-22 Texas Instruments Incorporated Power MISFET
US5091759A (en) * 1989-10-30 1992-02-25 Texas Instruments Incorporated Heterostructure field effect transistor

Also Published As

Publication number Publication date
JPH0371775B2 (cs) 1991-11-14

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