JPS5927519A - インジウム−アンチモン−ヒ素系化合物半導体薄膜の製造方法 - Google Patents
インジウム−アンチモン−ヒ素系化合物半導体薄膜の製造方法Info
- Publication number
- JPS5927519A JPS5927519A JP57135460A JP13546082A JPS5927519A JP S5927519 A JPS5927519 A JP S5927519A JP 57135460 A JP57135460 A JP 57135460A JP 13546082 A JP13546082 A JP 13546082A JP S5927519 A JPS5927519 A JP S5927519A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- vacuum
- substrate
- antimony
- deposited
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02549—Antimonides
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Hall/Mr Elements (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57135460A JPS5927519A (ja) | 1982-08-03 | 1982-08-03 | インジウム−アンチモン−ヒ素系化合物半導体薄膜の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57135460A JPS5927519A (ja) | 1982-08-03 | 1982-08-03 | インジウム−アンチモン−ヒ素系化合物半導体薄膜の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5927519A true JPS5927519A (ja) | 1984-02-14 |
| JPH0359572B2 JPH0359572B2 (enrdf_load_stackoverflow) | 1991-09-11 |
Family
ID=15152225
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57135460A Granted JPS5927519A (ja) | 1982-08-03 | 1982-08-03 | インジウム−アンチモン−ヒ素系化合物半導体薄膜の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5927519A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4761300A (en) * | 1983-06-29 | 1988-08-02 | Stauffer Chemical Company | Method of vacuum depostion of pnictide films on a substrate using a pnictide bubbler and a sputterer |
| JPH06170262A (ja) * | 1992-12-03 | 1994-06-21 | Nissei Plastics Ind Co | 粉砕機及びそのクリーニング方法 |
| JP2014157994A (ja) * | 2013-02-18 | 2014-08-28 | Asahi Kasei Corp | 化合物半導体積層体及びその製造方法 |
-
1982
- 1982-08-03 JP JP57135460A patent/JPS5927519A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4761300A (en) * | 1983-06-29 | 1988-08-02 | Stauffer Chemical Company | Method of vacuum depostion of pnictide films on a substrate using a pnictide bubbler and a sputterer |
| JPH06170262A (ja) * | 1992-12-03 | 1994-06-21 | Nissei Plastics Ind Co | 粉砕機及びそのクリーニング方法 |
| JP2014157994A (ja) * | 2013-02-18 | 2014-08-28 | Asahi Kasei Corp | 化合物半導体積層体及びその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0359572B2 (enrdf_load_stackoverflow) | 1991-09-11 |
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