JPH0359570B2 - - Google Patents
Info
- Publication number
- JPH0359570B2 JPH0359570B2 JP57113858A JP11385882A JPH0359570B2 JP H0359570 B2 JPH0359570 B2 JP H0359570B2 JP 57113858 A JP57113858 A JP 57113858A JP 11385882 A JP11385882 A JP 11385882A JP H0359570 B2 JPH0359570 B2 JP H0359570B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- substrate
- deposited
- present
- insb
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010409 thin film Substances 0.000 claims description 27
- 229910052787 antimony Inorganic materials 0.000 claims description 22
- 229910052738 indium Inorganic materials 0.000 claims description 19
- 229910052733 gallium Inorganic materials 0.000 claims description 18
- 239000010408 film Substances 0.000 claims description 11
- 239000000203 mixture Substances 0.000 claims description 11
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 9
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 9
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 description 29
- 239000000758 substrate Substances 0.000 description 28
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 15
- 238000000151 deposition Methods 0.000 description 13
- 230000008021 deposition Effects 0.000 description 9
- 238000007740 vapor deposition Methods 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 230000008020 evaporation Effects 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000010445 mica Substances 0.000 description 3
- 229910052618 mica group Inorganic materials 0.000 description 3
- 229910005542 GaSb Inorganic materials 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 229910004261 CaF 2 Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000001463 antimony compounds Chemical class 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02549—Antimonides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Physical Vapour Deposition (AREA)
- Hall/Mr Elements (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57113858A JPS595620A (ja) | 1982-07-02 | 1982-07-02 | インジウム−ガリウム−アンチモン系化合物薄膜の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57113858A JPS595620A (ja) | 1982-07-02 | 1982-07-02 | インジウム−ガリウム−アンチモン系化合物薄膜の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS595620A JPS595620A (ja) | 1984-01-12 |
| JPH0359570B2 true JPH0359570B2 (enrdf_load_stackoverflow) | 1991-09-11 |
Family
ID=14622837
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57113858A Granted JPS595620A (ja) | 1982-07-02 | 1982-07-02 | インジウム−ガリウム−アンチモン系化合物薄膜の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS595620A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0210882A (ja) * | 1988-06-29 | 1990-01-16 | Matsushita Electric Ind Co Ltd | 半導体薄膜磁気抵抗素子およびその製造方法 |
-
1982
- 1982-07-02 JP JP57113858A patent/JPS595620A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS595620A (ja) | 1984-01-12 |
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