JPS5923565A - 半導体装置の製法 - Google Patents

半導体装置の製法

Info

Publication number
JPS5923565A
JPS5923565A JP57131929A JP13192982A JPS5923565A JP S5923565 A JPS5923565 A JP S5923565A JP 57131929 A JP57131929 A JP 57131929A JP 13192982 A JP13192982 A JP 13192982A JP S5923565 A JPS5923565 A JP S5923565A
Authority
JP
Japan
Prior art keywords
resist
pattern
coated
polymer resin
etched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57131929A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0358176B2 (enrdf_load_stackoverflow
Inventor
Masaru Miyazaki
勝 宮崎
Susumu Takahashi
進 高橋
Takahiro Kobashi
小橋　隆裕
Kiichi Kamiyanagi
喜一 上柳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57131929A priority Critical patent/JPS5923565A/ja
Priority to US06/517,409 priority patent/US4561169A/en
Priority to CA000433478A priority patent/CA1206626A/en
Priority to DE8383107520T priority patent/DE3378239D1/de
Priority to KR1019830003551A priority patent/KR910006673B1/ko
Priority to EP83107520A priority patent/EP0101960B1/en
Publication of JPS5923565A publication Critical patent/JPS5923565A/ja
Publication of JPH0358176B2 publication Critical patent/JPH0358176B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP57131929A 1982-07-30 1982-07-30 半導体装置の製法 Granted JPS5923565A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP57131929A JPS5923565A (ja) 1982-07-30 1982-07-30 半導体装置の製法
US06/517,409 US4561169A (en) 1982-07-30 1983-07-26 Method of manufacturing semiconductor device utilizing multilayer mask
CA000433478A CA1206626A (en) 1982-07-30 1983-07-28 Method of manufacturing semiconductor device
DE8383107520T DE3378239D1 (en) 1982-07-30 1983-07-29 Method of manufacturing a semiconductor device having a self-aligned gate electrode
KR1019830003551A KR910006673B1 (ko) 1982-07-30 1983-07-29 반도체 장치의 제조방법
EP83107520A EP0101960B1 (en) 1982-07-30 1983-07-29 Method of manufacturing a semiconductor device having a self-aligned gate electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57131929A JPS5923565A (ja) 1982-07-30 1982-07-30 半導体装置の製法

Publications (2)

Publication Number Publication Date
JPS5923565A true JPS5923565A (ja) 1984-02-07
JPH0358176B2 JPH0358176B2 (enrdf_load_stackoverflow) 1991-09-04

Family

ID=15069502

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57131929A Granted JPS5923565A (ja) 1982-07-30 1982-07-30 半導体装置の製法

Country Status (1)

Country Link
JP (1) JPS5923565A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61163662A (ja) * 1985-01-14 1986-07-24 Agency Of Ind Science & Technol 電界効果トランジスタの製造方法
JP2014099463A (ja) * 2012-11-13 2014-05-29 Mitsubishi Electric Corp 半導体装置の製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5852880A (ja) * 1981-09-25 1983-03-29 Oki Electric Ind Co Ltd 半導体素子の製造方法
JPS5896769A (ja) * 1981-12-04 1983-06-08 Oki Electric Ind Co Ltd 半導体素子の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5852880A (ja) * 1981-09-25 1983-03-29 Oki Electric Ind Co Ltd 半導体素子の製造方法
JPS5896769A (ja) * 1981-12-04 1983-06-08 Oki Electric Ind Co Ltd 半導体素子の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61163662A (ja) * 1985-01-14 1986-07-24 Agency Of Ind Science & Technol 電界効果トランジスタの製造方法
JP2014099463A (ja) * 2012-11-13 2014-05-29 Mitsubishi Electric Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
JPH0358176B2 (enrdf_load_stackoverflow) 1991-09-04

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