JPS59229974A - 半導体撮像装置 - Google Patents

半導体撮像装置

Info

Publication number
JPS59229974A
JPS59229974A JP58104636A JP10463683A JPS59229974A JP S59229974 A JPS59229974 A JP S59229974A JP 58104636 A JP58104636 A JP 58104636A JP 10463683 A JP10463683 A JP 10463683A JP S59229974 A JPS59229974 A JP S59229974A
Authority
JP
Japan
Prior art keywords
region
imaging device
gate
semiconductor
control
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58104636A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0444468B2 (enrdf_load_stackoverflow
Inventor
Akimasa Tanaka
章雅 田中
Junichi Nishizawa
潤一 西澤
Naoshige Tamamushi
玉蟲　尚茂
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Priority to JP58104636A priority Critical patent/JPS59229974A/ja
Publication of JPS59229974A publication Critical patent/JPS59229974A/ja
Publication of JPH0444468B2 publication Critical patent/JPH0444468B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/196—Junction field effect transistor [JFET] image sensors; Static induction transistor [SIT] image sensors

Landscapes

  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP58104636A 1983-06-10 1983-06-10 半導体撮像装置 Granted JPS59229974A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58104636A JPS59229974A (ja) 1983-06-10 1983-06-10 半導体撮像装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58104636A JPS59229974A (ja) 1983-06-10 1983-06-10 半導体撮像装置

Publications (2)

Publication Number Publication Date
JPS59229974A true JPS59229974A (ja) 1984-12-24
JPH0444468B2 JPH0444468B2 (enrdf_load_stackoverflow) 1992-07-21

Family

ID=14385930

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58104636A Granted JPS59229974A (ja) 1983-06-10 1983-06-10 半導体撮像装置

Country Status (1)

Country Link
JP (1) JPS59229974A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPH0444468B2 (enrdf_load_stackoverflow) 1992-07-21

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