JPS59213700A - ＳｉＣウイスカ−の製造方法 - Google Patents

ＳｉＣウイスカ−の製造方法

Info

Publication number
JPS59213700A
JPS59213700A JP58085906A JP8590683A JPS59213700A JP S59213700 A JPS59213700 A JP S59213700A JP 58085906 A JP58085906 A JP 58085906A JP 8590683 A JP8590683 A JP 8590683A JP S59213700 A JPS59213700 A JP S59213700A
Authority
JP
Japan
Prior art keywords
carbon black
carbon
oil absorption
surface area
specific surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58085906A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6310120B2 (enExample
Inventor
Toshio Nakada
仲田　俊夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokai Carbon Co Ltd
Original Assignee
Tokai Carbon Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokai Carbon Co Ltd filed Critical Tokai Carbon Co Ltd
Priority to JP58085906A priority Critical patent/JPS59213700A/ja
Publication of JPS59213700A publication Critical patent/JPS59213700A/ja
Publication of JPS6310120B2 publication Critical patent/JPS6310120B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/005—Growth of whiskers or needles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP58085906A 1983-05-18 1983-05-18 ＳｉＣウイスカ−の製造方法 Granted JPS59213700A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58085906A JPS59213700A (ja) 1983-05-18 1983-05-18 ＳｉＣウイスカ−の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58085906A JPS59213700A (ja) 1983-05-18 1983-05-18 ＳｉＣウイスカ−の製造方法

Publications (2)

Publication Number Publication Date
JPS59213700A true JPS59213700A (ja) 1984-12-03
JPS6310120B2 JPS6310120B2 (enExample) 1988-03-03

Family

ID=13871875

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58085906A Granted JPS59213700A (ja) 1983-05-18 1983-05-18 ＳｉＣウイスカ−の製造方法

Country Status (1)

Country Link
JP (1) JPS59213700A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3541238A1 (de) * 1984-11-21 1986-05-22 Tokai Carbon Co. Ltd., Tokio/Tokyo Verfahren zur herstellung von siliziumkohlenstoffwhiskern
JPH02141499A (ja) * 1987-02-23 1990-05-30 Pechiney Electrometall 炭化ケイ素ウィスカーの製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5228760A (en) * 1975-08-30 1977-03-03 Matsushita Electric Works Ltd Adiabatic material
JPS57209813A (en) * 1981-06-18 1982-12-23 Tokai Carbon Co Ltd Preparation of silicon carbide whisker
JPS5845197A (ja) * 1981-09-14 1983-03-16 Tokai Carbon Co Ltd 高品位ｓｉｃホイスカ−の製造方法
JPS5845198A (ja) * 1981-09-14 1983-03-16 Tokai Carbon Co Ltd ｓｉｃホイスカ−の製造方法
JPS5845196A (ja) * 1981-09-14 1983-03-16 Tokai Carbon Co Ltd ｓｉｃホイスカ−の製造法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5228760A (en) * 1975-08-30 1977-03-03 Matsushita Electric Works Ltd Adiabatic material
JPS57209813A (en) * 1981-06-18 1982-12-23 Tokai Carbon Co Ltd Preparation of silicon carbide whisker
JPS5845197A (ja) * 1981-09-14 1983-03-16 Tokai Carbon Co Ltd 高品位ｓｉｃホイスカ−の製造方法
JPS5845198A (ja) * 1981-09-14 1983-03-16 Tokai Carbon Co Ltd ｓｉｃホイスカ−の製造方法
JPS5845196A (ja) * 1981-09-14 1983-03-16 Tokai Carbon Co Ltd ｓｉｃホイスカ−の製造法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3541238A1 (de) * 1984-11-21 1986-05-22 Tokai Carbon Co. Ltd., Tokio/Tokyo Verfahren zur herstellung von siliziumkohlenstoffwhiskern
JPH02141499A (ja) * 1987-02-23 1990-05-30 Pechiney Electrometall 炭化ケイ素ウィスカーの製造方法

Also Published As

Publication number Publication date
JPS6310120B2 (enExample) 1988-03-03

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