JPS59211220A - プラズマｃｖｄ装置 - Google Patents

プラズマｃｖｄ装置

Info

Publication number
JPS59211220A
JPS59211220A JP58087087A JP8708783A JPS59211220A JP S59211220 A JPS59211220 A JP S59211220A JP 58087087 A JP58087087 A JP 58087087A JP 8708783 A JP8708783 A JP 8708783A JP S59211220 A JPS59211220 A JP S59211220A
Authority
JP
Japan
Prior art keywords
heating element
cylindrical surface
rotary plate
jig
group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58087087A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0462168B2 (enrdf_load_html_response
Inventor
Tomitaro Koyama
小山　富太郎
Nobuo Kawakami
川上　伸男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shimadzu Corp
Shimazu Seisakusho KK
Original Assignee
Shimadzu Corp
Shimazu Seisakusho KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shimadzu Corp, Shimazu Seisakusho KK filed Critical Shimadzu Corp
Priority to JP58087087A priority Critical patent/JPS59211220A/ja
Publication of JPS59211220A publication Critical patent/JPS59211220A/ja
Publication of JPH0462168B2 publication Critical patent/JPH0462168B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)
  • Chemical Vapour Deposition (AREA)
JP58087087A 1983-05-17 1983-05-17 プラズマｃｖｄ装置 Granted JPS59211220A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58087087A JPS59211220A (ja) 1983-05-17 1983-05-17 プラズマｃｖｄ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58087087A JPS59211220A (ja) 1983-05-17 1983-05-17 プラズマｃｖｄ装置

Publications (2)

Publication Number Publication Date
JPS59211220A true JPS59211220A (ja) 1984-11-30
JPH0462168B2 JPH0462168B2 (enrdf_load_html_response) 1992-10-05

Family

ID=13905162

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58087087A Granted JPS59211220A (ja) 1983-05-17 1983-05-17 プラズマｃｖｄ装置

Country Status (1)

Country Link
JP (1) JPS59211220A (enrdf_load_html_response)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018098980A1 (zh) * 2016-11-30 2018-06-07 江苏菲沃泰纳米科技有限公司 一种等离子体聚合涂层装置
US11332829B2 (en) 2016-11-30 2022-05-17 Jiangsu Favored Nanotechnology Co., LTD Plasma polymerization coating with uniformity control
US11339477B2 (en) 2016-11-30 2022-05-24 Jiangsu Favored Nanotechnology Co., LTD Plasma polymerization coating apparatus and process

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018098980A1 (zh) * 2016-11-30 2018-06-07 江苏菲沃泰纳米科技有限公司 一种等离子体聚合涂层装置
US10424465B2 (en) 2016-11-30 2019-09-24 Jiangsu Favored Nanotechnology Co., LTD Plasma polymerization coating apparatus
US11332829B2 (en) 2016-11-30 2022-05-17 Jiangsu Favored Nanotechnology Co., LTD Plasma polymerization coating with uniformity control
US11339477B2 (en) 2016-11-30 2022-05-24 Jiangsu Favored Nanotechnology Co., LTD Plasma polymerization coating apparatus and process
US12065740B2 (en) 2016-11-30 2024-08-20 Jiangsu Favored Nanotechnology Co., LTD Plasma polymerization coating with uniformity control

Also Published As

Publication number Publication date
JPH0462168B2 (enrdf_load_html_response) 1992-10-05

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