JPH0462168B2 - - Google Patents
Info
- Publication number
- JPH0462168B2 JPH0462168B2 JP58087087A JP8708783A JPH0462168B2 JP H0462168 B2 JPH0462168 B2 JP H0462168B2 JP 58087087 A JP58087087 A JP 58087087A JP 8708783 A JP8708783 A JP 8708783A JP H0462168 B2 JPH0462168 B2 JP H0462168B2
- Authority
- JP
- Japan
- Prior art keywords
- cylindrical surface
- heating element
- rotary plate
- gas introduction
- jig
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000463 material Substances 0.000 claims description 121
- 238000010438 heat treatment Methods 0.000 claims description 53
- 238000005192 partition Methods 0.000 claims description 10
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims 6
- 239000010408 film Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000012777 electrically insulating material Substances 0.000 description 2
- 230000003028 elevating effect Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
- Light Receiving Elements (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58087087A JPS59211220A (ja) | 1983-05-17 | 1983-05-17 | プラズマｃｖｄ装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58087087A JPS59211220A (ja) | 1983-05-17 | 1983-05-17 | プラズマｃｖｄ装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59211220A JPS59211220A (ja) | 1984-11-30 |
| JPH0462168B2 true JPH0462168B2 (enrdf_load_html_response) | 1992-10-05 |
Family
ID=13905162
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58087087A Granted JPS59211220A (ja) | 1983-05-17 | 1983-05-17 | プラズマｃｖｄ装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59211220A (enrdf_load_html_response) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106756888B (zh) | 2016-11-30 | 2018-07-13 | 江苏菲沃泰纳米科技有限公司 | 一种纳米镀膜设备旋转货架装置 |
| US11339477B2 (en) | 2016-11-30 | 2022-05-24 | Jiangsu Favored Nanotechnology Co., LTD | Plasma polymerization coating apparatus and process |
| CN106622824B (zh) * | 2016-11-30 | 2018-10-12 | 江苏菲沃泰纳米科技有限公司 | 一种等离子体聚合涂层装置 |
-
1983
- 1983-05-17 JP JP58087087A patent/JPS59211220A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59211220A (ja) | 1984-11-30 |