JPS59208802A - 厚膜型正特性半導体素子の製造方法 - Google Patents

厚膜型正特性半導体素子の製造方法

Info

Publication number
JPS59208802A
JPS59208802A JP58084440A JP8444083A JPS59208802A JP S59208802 A JPS59208802 A JP S59208802A JP 58084440 A JP58084440 A JP 58084440A JP 8444083 A JP8444083 A JP 8444083A JP S59208802 A JPS59208802 A JP S59208802A
Authority
JP
Japan
Prior art keywords
thick film
positive temperature
semiconductor element
temperature coefficient
glass frit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58084440A
Other languages
English (en)
Japanese (ja)
Other versions
JPH04362B2 (enrdf_load_html_response
Inventor
野井　慶一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP58084440A priority Critical patent/JPS59208802A/ja
Publication of JPS59208802A publication Critical patent/JPS59208802A/ja
Publication of JPH04362B2 publication Critical patent/JPH04362B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Thermistors And Varistors (AREA)
JP58084440A 1983-05-13 1983-05-13 厚膜型正特性半導体素子の製造方法 Granted JPS59208802A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58084440A JPS59208802A (ja) 1983-05-13 1983-05-13 厚膜型正特性半導体素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58084440A JPS59208802A (ja) 1983-05-13 1983-05-13 厚膜型正特性半導体素子の製造方法

Publications (2)

Publication Number Publication Date
JPS59208802A true JPS59208802A (ja) 1984-11-27
JPH04362B2 JPH04362B2 (enrdf_load_html_response) 1992-01-07

Family

ID=13830647

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58084440A Granted JPS59208802A (ja) 1983-05-13 1983-05-13 厚膜型正特性半導体素子の製造方法

Country Status (1)

Country Link
JP (1) JPS59208802A (enrdf_load_html_response)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04324901A (ja) * 1991-04-25 1992-11-13 Sekisui Plastics Co Ltd チタン酸バリウム系磁器半導体の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04324901A (ja) * 1991-04-25 1992-11-13 Sekisui Plastics Co Ltd チタン酸バリウム系磁器半導体の製造方法

Also Published As

Publication number Publication date
JPH04362B2 (enrdf_load_html_response) 1992-01-07

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