JPS59208779A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS59208779A
JPS59208779A JP58083835A JP8383583A JPS59208779A JP S59208779 A JPS59208779 A JP S59208779A JP 58083835 A JP58083835 A JP 58083835A JP 8383583 A JP8383583 A JP 8383583A JP S59208779 A JPS59208779 A JP S59208779A
Authority
JP
Japan
Prior art keywords
film
region
ion implantation
base
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58083835A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0478008B2 (enrdf_load_stackoverflow
Inventor
Akihiro Kanda
神田　彰弘
Hideaki Sadamatsu
定松　英明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP58083835A priority Critical patent/JPS59208779A/ja
Publication of JPS59208779A publication Critical patent/JPS59208779A/ja
Publication of JPH0478008B2 publication Critical patent/JPH0478008B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Bipolar Transistors (AREA)
JP58083835A 1983-05-12 1983-05-12 半導体装置の製造方法 Granted JPS59208779A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58083835A JPS59208779A (ja) 1983-05-12 1983-05-12 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58083835A JPS59208779A (ja) 1983-05-12 1983-05-12 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS59208779A true JPS59208779A (ja) 1984-11-27
JPH0478008B2 JPH0478008B2 (enrdf_load_stackoverflow) 1992-12-10

Family

ID=13813753

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58083835A Granted JPS59208779A (ja) 1983-05-12 1983-05-12 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS59208779A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPH0478008B2 (enrdf_load_stackoverflow) 1992-12-10

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