JPS59208741A - Attracting chuck device for semiconductor wafer - Google Patents
Attracting chuck device for semiconductor waferInfo
- Publication number
- JPS59208741A JPS59208741A JP8430983A JP8430983A JPS59208741A JP S59208741 A JPS59208741 A JP S59208741A JP 8430983 A JP8430983 A JP 8430983A JP 8430983 A JP8430983 A JP 8430983A JP S59208741 A JPS59208741 A JP S59208741A
- Authority
- JP
- Japan
- Prior art keywords
- suction
- semiconductor wafer
- attracting
- vacuum
- light beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Gripping Jigs, Holding Jigs, And Positioning Jigs (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
この発明は、半導体ウェーハを処理するため、真空吸着
して保持しておく、半導体ウェーハ用吸着ナヤツク装置
に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a suction device for semiconductor wafers that vacuum suctions and holds semiconductor wafers in order to process them.
従来この種の装置として、第１図に縦断面図で示すもの
があった。ｔｌ）は半導体ウェーハの吸着板で、上面は
吸着面（ｌａ）になっており、複数の吸引孔（ｌｂ）か
設りられている。（２）は吸着板＋１＋の裏面に気密に
固着された囲い体で、真空吸引連結管（３）が接続され
、真空ポンプ（図示は略す）に結合されている。A conventional device of this type is shown in FIG. 1 in a vertical cross-sectional view. tl) is a suction plate for semiconductor wafers, the upper surface of which is a suction surface (la), and a plurality of suction holes (lb) are provided. (2) is an enclosure hermetically fixed to the back surface of the adsorption plate +1+, to which a vacuum suction connecting pipe (3) is connected and coupled to a vacuum pump (not shown).
上記従来の吸着チャック装置の動作は、次のよう（こな
る。半導体ウェーハ（４）を吸着板（１）の吸着面（１
ａ）上に載せ、真空ポンプにより囲い体（２）内を排気
すると、吸引孔（１ｂ）の負圧吸引作用により半導体ウ
ェーハ（４）は吸着面（１ａ）に密着する。The operation of the conventional suction chuck device described above is as follows: The semiconductor wafer (4) is held on the suction surface (1) of the suction plate (1).
a) When the enclosure (2) is evacuated using a vacuum pump, the semiconductor wafer (4) is brought into close contact with the suction surface (1a) by the negative pressure suction action of the suction hole (1b).
従来の吸着チャック装置は、半導体ウェーハ（４）を吸
引蜜漬するのみで、半導体ウェーハ（４）自体がもって
いるひずみによる反り状態を知ることはできなかった。The conventional suction chuck device only suctions and immerses the semiconductor wafer (4), but it is not possible to know the warpage state due to the strain that the semiconductor wafer (4) itself has.
このため、半導体ウェーハ（４）は処理工程において、
パターン乱れやプローブ接触不良など生じるおそれかあ
った。Therefore, in the processing process, the semiconductor wafer (4)
There was a risk of pattern disturbances and poor probe contact.
この発明は、上記従来装置の欠点を除くためになされた
もので、半導体ウェーハを真空吸着する吸着板に、１対
宛の吸引孔を光ビームの入射角と反射角をなす角度に傾
斜して複数個所に設け、これらの入射側の吸引孔に対し
光ビーム源から光ビームを投射し、吸着板上の半導体ウ
ェーハ面からの反射光ビームを反射側の吸引孔を通して
出し、光検出器で光量を検出するようにし、真空吸着前
と吸着後での双方の光量を比較し、半導体ウェーハの反
り状態が検出されるようにし、反りの著しい半導体ウェ
ーハを未然に排除１選別ができ、生産性が向上される半
導体ウェーハ用吸着チャック装置を提供することを目的
としている。This invention was made in order to eliminate the drawbacks of the above-mentioned conventional apparatus, and a suction plate for vacuum suctioning a semiconductor wafer has a pair of suction holes inclined at an angle that is the angle of incidence and reflection angle of the light beam. A light beam is projected from a light beam source to the suction holes on the entrance side, and the reflected light beam from the semiconductor wafer surface on the suction plate is output through the suction holes on the reflection side, and a photodetector measures the light intensity. By comparing the light intensity before and after vacuum suction, the warped state of the semiconductor wafer can be detected, and it is possible to eliminate and sort semiconductor wafers that are significantly warped, increasing productivity. It is an object of the present invention to provide an improved suction chuck device for semiconductor wafers.
第２図はこの発明の一実施例による半導体ウェーハ用吸
着チャック装置の縦断面図である。（＋＋口ま半導体ウ
ェーハの吸着板で、（ｌｌａ）は吸着面である。吸着板
（１１）には、中心部に吸引孔（ｌｌｂ）が設けられ、
中心部から所定の半径位置に円周方向に対し複数個所に
、吸着面（ｌｌａ）側から所定の傾斜角で１対宛の吸引
孔（ｌｌｃ）、 （ｌｌｄ）が貫通している。FIG. 2 is a longitudinal sectional view of a suction chuck device for semiconductor wafers according to an embodiment of the present invention. (++ Mouth This is a suction plate for semiconductor wafers, (lla) is the suction surface. The suction plate (11) is provided with a suction hole (llb) in the center,
A pair of suction holes (llc) and (lld) penetrate at a predetermined angle of inclination from the suction surface (lla) side at a plurality of locations in the circumferential direction at predetermined radial positions from the center.
（１２）は吸着板（１１）の裏面に気密に固着てれ機械
的に保持し、かつ、真２ｍを形成する囲い体で、真空吸
引連結管（３）が接続され、真空ポンプ（図示は略す）
に結合されている。（１２ａ）及び（１２ｂ）は上記各
吸引孔（，１ｌｃ）及び（ｌｉｄ）の傾斜方向に連通ず
る窓孔で、光を透す透明拐からなる透明カバー（ｌ鵠に
よりそれぞれ気密にふさがれている。（１４）は各入射
側の吸引孔（１１０）に光ビームを投射する光ビーム源
、０５）は各反射側の吸引孔（１１ｄ）から出た反射光
を検出する光検出器である。(12) is an enclosure that is airtightly fixed to the back surface of the suction plate (11) and mechanically held, and forms a 2m long enclosure, to which the vacuum suction connecting pipe (3) is connected, and a vacuum pump (not shown). omitted)
is combined with (12a) and (12b) are window holes that communicate with each of the suction holes (, 1lc) and (lid) in the inclination direction, and are each airtightly covered by a transparent cover (l) made of transparent glass that allows light to pass through. (14) is a light beam source that projects a light beam to the suction hole (110) on each incident side, and 05) is a photodetector that detects the reflected light coming out of the suction hole (11d) on each reflection side. .
１対宛の吸引孔（ｌｌｃ）と（ｌｌａ）とは、吸着面（
１１ａ）に接した半導体ウェーハの面が整反射平面であ
ったとした場合の、入射角と反射角をなす角度関係にし
て設けである。A pair of suction holes (llc) and (lla) are attached to the suction surface (
11a) is provided in an angular relationship that forms the angle of incidence and the angle of reflection, assuming that the surface of the semiconductor wafer in contact with 11a is a regular reflection plane.
上記一実施例の吸着チャック装置の動作は、次のように
なる。第３図に示すように、吸着板（＋＋）の吸着面（
ｌｌａ ）に半導体ウェーハ（４）を載せる。このとき
は１だ真空吸引前であり、半導体ウェーハ（４）は１点
鎖線で示すようにひずみにより反っており、吸糸面（ｌ
ｌａ）との間にすき間ができている。The operation of the suction chuck device of the above embodiment is as follows. As shown in Figure 3, the suction surface (
lla) and place the semiconductor wafer (4) on it. At this time, 1 is before vacuum suction, and the semiconductor wafer (4) is warped due to strain as shown by the dashed line, and the suction surface (l
There is a gap between the
ここで各党ビーム源（１４）から入射光ビームＰを投射
すると、透明カバー（１３）を透過して吸引孔（ｌｌｃ
）を通り、半導体ウェーハ（４）面に当り迷光ビームＱ
が現われ、吸引孔（ｌｌｄ）内を通って出る反射光ビー
ムＲは光お−が減少する。続いて、真空ポンプにより囲
い体（１２１内を真空状態に吸引すると、半導体ウェー
ハ（４）は真空吸引でれ２点鎖線で示すように、Ｉｆｉ
府面（ｌｌａ ）に密浴しすき間がなくなって平面状態
になり、反射光ビームＲの光量は最大となる。Here, when the incident light beam P is projected from each party beam source (14), it passes through the transparent cover (13) and passes through the suction hole (llc).
), the stray light beam Q hits the semiconductor wafer (4) surface.
appears, and the reflected light beam R passing through the suction hole (lld) is reduced in light intensity. Next, when the inside of the enclosure (121) is vacuumed by a vacuum pump, the semiconductor wafer (4) is vacuum-suctioned, and as shown by the two-dot chain line, Ifi
The surface (lla) is bathed tightly and there are no gaps, resulting in a flat state, and the amount of reflected light beam R becomes maximum.
したがって、光検出器（１５）により、真空ポンプの動
作前と動作中とに対する、各吸引孔（ｌｌｄ）を通って
出る反射光ビームＲの光量を検出し比較することにより
、半導体ウェーノｉ４）の反り状態が検知され、これに
対する処置をとることができ、処理工程における不具合
をなくすることができる。Therefore, by detecting and comparing the light intensity of the reflected light beam R exiting through each suction hole (lld) before and during operation of the vacuum pump with the photodetector (15), the semiconductor wafer no. A warped state can be detected and countermeasures can be taken to eliminate problems in the processing process.
なお、上記実施例では、吸着板（１１）に１対宛の吸引
孔（ｌｌｃ）と（ｌＸａ）を半径方向に対し両側の２箇
所宛設けたが、必要によりさらに多く配設し、これらの
各吸引孔（ｌｌｃ）及び（Ｉｎ）に対応する光ビーム源
（１４）及び光検出器（１６）を設置してもよく、多数
個所からの光量データ群により、半導体ウェーノ・（４
）の反り状態の分布を知ることができる。In the above embodiment, a pair of suction holes (llc) and (lXa) are provided in the suction plate (11) at two locations on both sides in the radial direction, but more can be provided if necessary. A light beam source (14) and a photodetector (16) corresponding to each suction hole (llc) and (In) may be installed, and a semiconductor wafer (4)
) can know the distribution of warpage states.
以上のように、この発明によれは、半導体ウェーハを真
空吸引により保持する吸着板に、１対宛の吸引孔を光ビ
ームの入射角と反射角をなす角度に傾斜して設け、光ビ
ームを入射側の吸引孔に入射し、吸着板の吸着面上の半
導体ウェーノ・下面からの反射光ビームを反射側の吸引
孔を通して出し、光検出器で光量を検出するようにした
ので、真空吸着前と吸着状態とにおける双方の反射光ビ
ームの光搦、を比較すること（こより、反導体ウェーハ
の反り状態が検出、把握でき、処理工程でパターン描画
装置や自動ウエーハブローバ等へ適用することにより、
バクーン乱れやプローブ接触不良を起こずような、反り
の著しい半導体ウェーハを検出して未然に排除１選別す
ることができ、生産性が向上される。As described above, according to the present invention, a suction plate for holding a semiconductor wafer by vacuum suction is provided with a pair of suction holes inclined at an angle that forms the incident angle and reflection angle of the light beam, and the light beam is The light beam enters the suction hole on the entrance side and is reflected from the semiconductor wafer and bottom surface on the suction surface of the suction plate, and is output through the suction hole on the reflection side, and the light intensity is detected by a photodetector. By comparing the light beams of both reflected light beams in the adsorption state and the adsorption state (from this, the warped state of the anti-conductor wafer can be detected and understood, and by applying it to pattern writing equipment, automatic wafer blowers, etc. in the processing process,
Semiconductor wafers with significant warpage can be detected and sorted out before they occur without causing buckling disturbance or probe contact failure, thereby improving productivity.
第１図は従来の半導体ウェーハ用真空チャック装置眞の
縦断面１メ）、第２図はこの発明の一実施例による半導
体ウェーハ用真空チャック装置の概要縦断面図、第３図
は第２図の装置の動作状態を示す部分拡大断面図である
。
図において、４・・・半導体ウェーハ、１１・・・吸着
板、１１ ａ−＝吸着面、ｌｌｂ 、 ｌｌｃ 、 １
ｌｄ−吸引孔、コ、２・・・囲い体、１２ａ 、 １２
ｂ・・・窓孔、１３・・・透明カバー、１４・・・光ビ
ーム源、１５・・・光検出器。
なり、図中同一符号は同−又は相当部分を示す。
代理人 大岩増雄FIG. 1 is a vertical cross-sectional view of a conventional vacuum chuck device for semiconductor wafers, FIG. 2 is a schematic vertical cross-sectional view of a vacuum chuck device for semiconductor wafers according to an embodiment of the present invention, and FIG. FIG. 3 is a partially enlarged cross-sectional view showing the operating state of the device. In the figure, 4... semiconductor wafer, 11... suction plate, 11 a-= suction surface, llb, llc, 1
ld-suction hole, 2... enclosure, 12a, 12
b... Window hole, 13... Transparent cover, 14... Light beam source, 15... Photodetector. The same reference numerals in the figures indicate the same or equivalent parts. Agent Masuo Oiwa
Claims (1)
する半導体ウェーハ面に対し入射角と反射角とをなす角
展に双方が傾斜してありられたｌ討死の吸引孔が複数個
所に配設された吸着板、この吸着板の裏面を気密に囲っ
て固尤妊れ真空室を形成し外部の真空ポンプにより負圧
にされるようにしてあり、底部に上記各１対宛の吸引孔
に対応するｔ′Ｌ置にそれぞれ窓孔があけられ、これら
の窓孔が透明カバーで気密にふ坏がれである囲い体、こ
の囲い体の背部にそれぞれ配置てれ、光ビームを上記透
明カバーを透し上記入射側の吸引穴全通して上記吸着面
上の半導体ウェーハの面（こ投射する複数の元ビーム源
、及び上記囲い体の背部にそれぞれ配置され、上記半導
体ウェーハ面から反射し上記反射側の吸引孔を通り上記
透明カバーを透して出た反射光ビームの光量を検出する
複数の光検出器を備え、上記半導体ウェーハの真空吸着
前と吸着後とにおける反射光ビームの光量を比較し、半
導体ウェーハの反りの状態が検知されるようにした半導
体ウェーハ用吸着チャック装置。The upper surface serves as a suction surface for semiconductor wafers, and suction holes are provided at multiple locations, both sides of which are inclined at an angle that forms an angle of incidence and an angle of reflection with respect to the semiconductor wafer surface that is in contact with this suction surface. The reverse side of the suction plate is airtightly surrounded to form a solid-impact vacuum chamber, which is made to have a negative pressure by an external vacuum pump, and the bottom has suction holes for each pair. An enclosure is provided with window holes at the corresponding positions t'L, and these windows are hermetically surrounded by a transparent cover. A plurality of original beam sources are placed on the back of the enclosure, and are reflected from the semiconductor wafer surface and projected onto the surface of the semiconductor wafer on the suction surface. A plurality of photodetectors are provided for detecting the light intensity of the reflected light beam that passes through the suction hole on the reflection side and passes through the transparent cover, and the light intensity of the reflected light beam before and after vacuum suction of the semiconductor wafer is detected. A suction chuck device for semiconductor wafers allows the state of warpage of semiconductor wafers to be detected.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8430983A JPS59208741A (en) | 1983-05-12 | 1983-05-12 | Attracting chuck device for semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8430983A JPS59208741A (en) | 1983-05-12 | 1983-05-12 | Attracting chuck device for semiconductor wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59208741A true JPS59208741A (en) | 1984-11-27 |
| JPS6311776B2 JPS6311776B2 (en) | 1988-03-16 |
Family
ID=13826890
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8430983A Granted JPS59208741A (en) | 1983-05-12 | 1983-05-12 | Attracting chuck device for semiconductor wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59208741A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6484728A (en) * | 1987-09-28 | 1989-03-30 | Tokyo Electron Ltd | Alignment |
| JPH0989997A (en) * | 1995-09-20 | 1997-04-04 | Hioki Ee Corp | Suction type board fixture for base board inspecting device |
| EP0926708A2 (en) * | 1997-12-23 | 1999-06-30 | Siemens Aktiengesellschaft | Method and apparatus for processing semiconductor wafers |
| JP2008053302A (en) * | 2006-08-22 | 2008-03-06 | Tokyo Electron Ltd | Substrate detecting mechanism and substrate storing case |
| JP2010029929A (en) * | 2008-07-31 | 2010-02-12 | Disco Abrasive Syst Ltd | Laser beam machining apparatus and laser beam machining method |
| JP2014033057A (en) * | 2012-08-02 | 2014-02-20 | Murata Mfg Co Ltd | Substrate sucking device |
| JP2019016714A (en) * | 2017-07-07 | 2019-01-31 | 東京エレクトロン株式会社 | Substrate warp detector and substrate warp detection method, and substrate processing device and method using the detector and detection method |
-
1983
- 1983-05-12 JP JP8430983A patent/JPS59208741A/en active Granted
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6484728A (en) * | 1987-09-28 | 1989-03-30 | Tokyo Electron Ltd | Alignment |
| JPH0989997A (en) * | 1995-09-20 | 1997-04-04 | Hioki Ee Corp | Suction type board fixture for base board inspecting device |
| EP0926708A2 (en) * | 1997-12-23 | 1999-06-30 | Siemens Aktiengesellschaft | Method and apparatus for processing semiconductor wafers |
| EP0926708A3 (en) * | 1997-12-23 | 2003-08-20 | Siemens Aktiengesellschaft | Method and apparatus for processing semiconductor wafers |
| JP2008053302A (en) * | 2006-08-22 | 2008-03-06 | Tokyo Electron Ltd | Substrate detecting mechanism and substrate storing case |
| JP2010029929A (en) * | 2008-07-31 | 2010-02-12 | Disco Abrasive Syst Ltd | Laser beam machining apparatus and laser beam machining method |
| JP2014033057A (en) * | 2012-08-02 | 2014-02-20 | Murata Mfg Co Ltd | Substrate sucking device |
| JP2019016714A (en) * | 2017-07-07 | 2019-01-31 | 東京エレクトロン株式会社 | Substrate warp detector and substrate warp detection method, and substrate processing device and method using the detector and detection method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6311776B2 (en) | 1988-03-16 |
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