JPS6311776B2 - - Google Patents
Info
- Publication number
- JPS6311776B2 JPS6311776B2 JP8430983A JP8430983A JPS6311776B2 JP S6311776 B2 JPS6311776 B2 JP S6311776B2 JP 8430983 A JP8430983 A JP 8430983A JP 8430983 A JP8430983 A JP 8430983A JP S6311776 B2 JPS6311776 B2 JP S6311776B2
- Authority
- JP
- Japan
- Prior art keywords
- suction
- semiconductor wafer
- light beam
- angle
- enclosure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 235000012431 wafers Nutrition 0.000 claims description 39
- 239000004065 semiconductor Substances 0.000 claims description 37
- 238000001179 sorption measurement Methods 0.000 claims 1
- 238000000034 method Methods 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Gripping Jigs, Holding Jigs, And Positioning Jigs (AREA)
Description
【発明の詳細な説明】
〔発明の技術分野〕
この発明は、半導体ウエーハを処理するため、
真空吸着して保持しておく、半導体ウエーハ用吸
着チヤツク装置に関する。[Detailed Description of the Invention] [Technical Field of the Invention] The present invention provides a method for processing semiconductor wafers.
This invention relates to a suction chuck device for holding semiconductor wafers by vacuum suction.
従来この種の装置として、第１図に縦断面図で
示すものがあつた。１は半導体ウエーハの吸着板
で、上面は吸着面１ａになつており、複数の吸引
孔１ｂが設けられている。２は吸着板１の裏面に
気密に固着された囲い体で、真空吸引連結管３が
接続され、真空ポンプ（図示は略す）に結合され
ている。
A conventional device of this type has been shown in FIG. 1 as a vertical sectional view. Reference numeral 1 denotes a suction plate for semiconductor wafers, the upper surface of which is a suction surface 1a, and a plurality of suction holes 1b are provided. Reference numeral 2 denotes an enclosure hermetically fixed to the back surface of the suction plate 1, to which a vacuum suction connecting pipe 3 is connected and coupled to a vacuum pump (not shown).
上記従来の吸着チヤツク装置の動作は、次のよ
うになる。半導体ウエーハ４を吸着板１の吸着面
１ａ上に載せ、真空ポンプにより囲い体２内を排
気すると、吸引孔１ｂの負圧吸引作用により半導
体ウエーハ４は吸着面１ａに密着する。 The operation of the conventional suction chuck device described above is as follows. When the semiconductor wafer 4 is placed on the suction surface 1a of the suction plate 1 and the inside of the enclosure 2 is evacuated by a vacuum pump, the semiconductor wafer 4 is brought into close contact with the suction surface 1a by the negative pressure suction action of the suction hole 1b.
従来の吸着チヤツク装置は、半導体ウエーハ４
を吸引密着するのみで、半導体ウエーハ４自体が
もつているひずみによる反り状態を知ることはで
きなかつた。このため、半導体ウエーハ４は処理
工程において、パターン乱れやプロープ接触不良
など生じるおそれがあつた。 A conventional suction chuck device is capable of holding a semiconductor wafer 4
It was not possible to know the warped state of the semiconductor wafer 4 due to the strain that the semiconductor wafer 4 itself had. For this reason, the semiconductor wafer 4 may suffer from pattern disturbances, probe contact failures, etc. during the processing steps.
この発明は、上記従来装置の欠点を除くために
なされたもので、半導体ウエーハを真空吸着する
吸着板に、１対宛の吸引孔を光ビームの入射角と
反射角をなす角度に傾斜して複数個所に設け、こ
れらの入射側の吸引孔に対し光ビーム源から光ビ
ームを投射し、吸着板上の半導体ウエーハ面から
の反射光ビームを反射側の吸引孔を通して出し、
光検出器で光量を検出するようにし、真空吸着前
と吸着後での双方の光量を比較し、半導体ウエー
ハの反り状態が検出されるようにし、反りの著し
い半導体ウエーハを未然に排除、選別ができ、生
産性が向上される半導体ウエーハ用吸着チヤツク
装置を提供することを目的としている。
This invention was made in order to eliminate the drawbacks of the above-mentioned conventional devices, and a suction plate for vacuum suctioning a semiconductor wafer has a pair of suction holes inclined at an angle that is the angle of incidence and reflection angle of the light beam. Provided at multiple locations, a light beam is projected from a light beam source to these suction holes on the entrance side, and a reflected light beam from the semiconductor wafer surface on the suction plate is output through the suction holes on the reflection side.
A photodetector is used to detect the amount of light, and the amount of light before and after vacuum suction is compared to detect the warped state of the semiconductor wafer, eliminating and sorting severely warped semiconductor wafers. It is an object of the present invention to provide a suction chuck device for semiconductor wafers, which can improve productivity.
第２図はこの発明の一実施例による半導体ウエ
ーハ用吸着チヤツク装置の縦断面図である。１１
は半導体ウエーハの吸着板で、１１ａは吸着面で
ある。吸着板１１には、中心部に吸引孔１１ｂが
設けられ、中心部から所定の半径位置に円周方向
に対し複数個所に、吸着面１１ａ側から所定の傾
斜角で１対宛の吸引孔１１ｃ，１１ｄが貫通して
いる。１２は吸着板１１の裏面に気密に固着され
機械的に保持し、かつ、真空室を形成する囲い体
で、真空吸引連結管３が接続され、真空ポンプ
（図示は略す）に結合されている。１２ａ及び１
２ｂは上記各吸引孔１１ｃ及び１１ｄの傾斜方向
に連通する窓孔で、光を透す透明材からなる透明
カバー１３によりそれぞれ気密にふさがれてい
る。１４は各入射側の吸引孔１１ｃに光ビームを
投射する光ビーム源、１５は各反射側の吸引孔１
１ｄから出た反射光を検出する光検出器である。
FIG. 2 is a longitudinal sectional view of a suction chuck device for semiconductor wafers according to an embodiment of the present invention. 11
1 is a suction plate for a semiconductor wafer, and 11a is a suction surface. The suction plate 11 is provided with a suction hole 11b in the center, and a pair of suction holes 11c are provided at a predetermined radial position from the center in a plurality of locations in the circumferential direction at a predetermined inclination angle from the suction surface 11a side. , 11d pass through. Reference numeral 12 denotes an enclosure that is airtightly fixed to the back surface of the suction plate 11 to mechanically hold it and form a vacuum chamber, to which the vacuum suction connecting pipe 3 is connected and coupled to a vacuum pump (not shown). . 12a and 1
Reference numeral 2b denotes a window hole which communicates with each of the suction holes 11c and 11d in the inclination direction, and each of which is airtightly covered by a transparent cover 13 made of a transparent material that transmits light. 14 is a light beam source that projects a light beam to each suction hole 11c on the incident side, and 15 is a suction hole 1 on each reflection side.
This is a photodetector that detects the reflected light emitted from 1d.
１対宛の吸引孔１１ｃと１１ｄとは、吸着面１
１ａに接した半導体ウエーハの面が整反射平面で
あつたとした場合の、入射角と反射角をなす角度
関係にして設けてある。 A pair of suction holes 11c and 11d are attached to the suction surface 1.
They are provided in an angular relationship that forms the angle of incidence and the angle of reflection, assuming that the surface of the semiconductor wafer in contact with 1a is a regular reflection plane.
上記一実施例の吸着チヤツク装置の動作は、次
のようになる。第３図に示すように、吸着板１１
の吸着面１１ａに半導体ウエーハ４を載せる。こ
のときはまだ真空吸引前であり、半導体ウエハー
４は１点鎖線で示すようにひずみにより反つてお
り、吸着面１１ａとの間にすき間ができている。
ここで各光ビーム源１４から入射光ビームＰを投
射すると、透明カバー１３を透過して吸引孔１１
ｃを通り、半導体ウエーハ４面に当り透光ビーム
Ｑが現われ、吸引孔１１ｄ内を通つて出る反射光
ビームＲは光量が減少する。続いて、真空ポンプ
により囲い体１２内を真空状態に吸引すると、半
導体ウエーハ４は真空吸引され２点鎖線で示すよ
うに、吸着面１１ａに密着しすき間がなくなつて
平面状態になり、反射光ビームＲの光量は最大と
なる。したがつて、光検出器１５により、真空ポ
ンプの動作前と動作中とに対する、各吸引孔１１
ｄを通つて出る反射光ビームＲの光量を検出し比
較することにより、半導体ウエーハ４の反り状態
が検知され、これに対する処置をとることがで
き、処理工程における不具合をなくすことができ
る。 The operation of the suction chuck device of the above embodiment is as follows. As shown in FIG.
The semiconductor wafer 4 is placed on the suction surface 11a. At this time, the vacuum has not yet been suctioned, and the semiconductor wafer 4 is warped due to strain, as shown by the dashed line, and a gap is formed between it and the suction surface 11a.
Here, when the incident light beam P is projected from each light beam source 14, it passes through the transparent cover 13 and passes through the suction hole 11.
A transmitted light beam Q appears after passing through the wafer 11c and hits the 4th surface of the semiconductor wafer, and the reflected light beam R exiting through the suction hole 11d is reduced in light intensity. Next, when the inside of the enclosure 12 is vacuumed by a vacuum pump, the semiconductor wafer 4 is vacuum-suctioned and adheres to the suction surface 11a, as shown by the two-dot chain line, and becomes flat with no gaps, and the reflected light is removed. The amount of light of beam R becomes maximum. Therefore, the photodetector 15 detects each suction hole 11 before and during operation of the vacuum pump.
By detecting and comparing the light intensity of the reflected light beam R exiting through d, the warped state of the semiconductor wafer 4 can be detected, countermeasures can be taken against it, and problems in the processing process can be eliminated.
なお、上記実施例では、吸着板１１に１対宛の
吸引孔１１ｃと１１ｄを半径方向に対し両側の２
箇所宛設けたが、必要によりさらに多く配設し、
これらの各吸引孔１１ｃ及び１１ｄに対応する光
ビーム源１４及び光検出器１５を設置してもよ
く、多数個所からの光量データ群により、半導体
ウエーハ４の反り状態の分布を知ることができ
る。 In the above embodiment, a pair of suction holes 11c and 11d are provided in the suction plate 11 on two sides in the radial direction.
We have set up the number for each location, but we will set up more if necessary.
A light beam source 14 and a photodetector 15 may be installed corresponding to each of these suction holes 11c and 11d, and the distribution of the warped state of the semiconductor wafer 4 can be known from a group of light amount data from multiple locations.
以上のように、この発明によれば、半導体ウエ
ーハを真空吸引により保持する吸着板に、１対宛
の吸引孔を光ビームの入射角と反射角をなす角度
に傾斜して設け、光ビームを入射側の吸引孔に入
射し、吸着板の吸着面上の半導体ウエーハ下面か
らの反射光ビームを反射側の吸引孔を通して出
し、光検出器で光量を検出するようにしたので、
真空吸着前と吸着状態とにおける双方の反射光ビ
ームの光量を比較することにより、反導体ウエー
ハの反り状態が検出、把握でき、処理工程でパタ
ーン描画装置や自動ウエーハプローパ等へ適用す
ることにより、パターン乱れやプロープ接触不良
を起こすような、反りの著しい半導体ウエーハを
検出して未然に排除、選別することができ、生産
性が向上される。
As described above, according to the present invention, a suction plate that holds a semiconductor wafer by vacuum suction is provided with a pair of suction holes that are inclined at an angle that forms the angle of incidence and reflection angle of the light beam, so that the light beam is The light beam enters the suction hole on the entrance side and is reflected from the lower surface of the semiconductor wafer on the suction surface of the suction plate, and exits through the suction hole on the reflection side, and the amount of light is detected by a photodetector.
By comparing the light intensity of both reflected light beams before vacuum suction and in the suction state, the warped state of the anti-conductor wafer can be detected and understood. It is possible to detect, eliminate, and sort semiconductor wafers that are severely warped and cause pattern disturbances or poor probe contact, thereby improving productivity.
第１図は従来の半導体ウエーハ用真空チヤツク
装置の縦断面図、第２図はこの発明の一実施例に
よる半導体ウエーハ用真空チヤツク装置の概要縦
断面図、第３図は第２図の装置の動作状態を示す
部分拡大断面図である。
図において、４…半導体ウエーハ、１１…吸着
板、１１ａ…吸着面、１１ｂ，１１ｃ，１１ｄ…
吸引孔、１２…囲い体、１２ａ，１２ｂ…窓孔、
１３…透明カバー、１４…光ビーム源、１５…光
検出器。なお、図中同一符号は同一又は相当部分
を示す。
FIG. 1 is a vertical cross-sectional view of a conventional vacuum chuck device for semiconductor wafers, FIG. 2 is a schematic vertical cross-sectional view of a vacuum chuck device for semiconductor wafers according to an embodiment of the present invention, and FIG. 3 is a longitudinal cross-sectional view of a conventional vacuum chuck device for semiconductor wafers. FIG. 3 is a partially enlarged sectional view showing an operating state. In the figure, 4... semiconductor wafer, 11... suction plate, 11a... suction surface, 11b, 11c, 11d...
Suction hole, 12... Enclosure, 12a, 12b... Window hole,
13...Transparent cover, 14...Light beam source, 15...Photodetector. Note that the same reference numerals in the figures indicate the same or equivalent parts.
Claims (1)
吸着面に接する半導体ウエーハ面に対し入射角と
反射角とをなす角度に双方が傾斜してあけられた
１対宛の吸引孔が複数個所に配設された吸着板、
この吸着板の裏面を気密に囲つて固着され真空室
を形成し外部の真空ポンプにより負圧にされるよ
うにしてあり、底部に上記各１対宛の吸引孔に対
応する位置にそれぞれ窓孔があけられ、これらの
窓孔が透明カバーで気密にふさがれてある囲い
体、この囲い体の背部にそれぞれ配置され、光ビ
ームを上記透明カバーを透し上記入射側の吸引穴
を通して上記吸着面上の半導体ウエーハの面に投
射する複数の光ビーム源、及び上記囲い体の背部
にそれぞれ配置され、上記半導体ウエーハ面から
反射し上記反射側の吸引孔を通り上記透明カバー
を透して出た反射光ビームの光量を検出する複数
の光検出器を備え、上記半導体ウエーハの真空吸
着前と吸着後とにおける反射光ビームの光量を比
較し、半導体ウエーハの反りの状態が検知される
ようにした半導体ウエーハ用吸着チヤツク装置。1 The upper surface serves as a suction surface for the semiconductor wafer, and a pair of suction holes are arranged at multiple locations, both of which are inclined at an angle that is the angle of incidence and the angle of reflection with respect to the semiconductor wafer surface that is in contact with the suction surface. Adsorption plate installed,
The back side of this suction plate is airtightly surrounded and fixed to form a vacuum chamber, which is made to have a negative pressure by an external vacuum pump, and there are window holes in the bottom at positions corresponding to each pair of suction holes. An enclosure is provided at the back of each enclosure, and the light beam passes through the transparent cover and passes through the suction hole on the incident side to the suction surface. A plurality of light beam sources projecting onto the surface of the upper semiconductor wafer, and each light beam source is arranged at the back of the enclosure, and the light beam is reflected from the semiconductor wafer surface, passes through the suction hole on the reflection side, and exits through the transparent cover. A plurality of photodetectors are provided to detect the light intensity of the reflected light beam, and the light intensity of the reflected light beam before and after vacuum suction of the semiconductor wafer is compared to detect the state of warpage of the semiconductor wafer. Suction chuck device for semiconductor wafers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8430983A JPS59208741A (en) | 1983-05-12 | 1983-05-12 | Attracting chuck device for semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8430983A JPS59208741A (en) | 1983-05-12 | 1983-05-12 | Attracting chuck device for semiconductor wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59208741A JPS59208741A (en) | 1984-11-27 |
| JPS6311776B2 true JPS6311776B2 (en) | 1988-03-16 |
Family
ID=13826890
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8430983A Granted JPS59208741A (en) | 1983-05-12 | 1983-05-12 | Attracting chuck device for semiconductor wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59208741A (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2554341B2 (en) * | 1987-09-28 | 1996-11-13 | 東京エレクトロン株式会社 | Probe device |
| JPH0989997A (en) * | 1995-09-20 | 1997-04-04 | Hioki Ee Corp | Suction type board fixture for base board inspecting device |
| US5872694A (en) * | 1997-12-23 | 1999-02-16 | Siemens Aktiengesellschaft | Method and apparatus for determining wafer warpage for optimized electrostatic chuck clamping voltage |
| JP4795893B2 (en) * | 2006-08-22 | 2011-10-19 | 東京エレクトロン株式会社 | Substrate detection mechanism and substrate container |
| JP5243139B2 (en) * | 2008-07-31 | 2013-07-24 | 株式会社ディスコ | Laser processing apparatus and laser processing method |
| JP2014033057A (en) * | 2012-08-02 | 2014-02-20 | Murata Mfg Co Ltd | Substrate sucking device |
| JP6789187B2 (en) * | 2017-07-07 | 2020-11-25 | 東京エレクトロン株式会社 | Substrate warpage detection device and substrate warpage detection method, and substrate processing device and substrate processing method using these |
-
1983
- 1983-05-12 JP JP8430983A patent/JPS59208741A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59208741A (en) | 1984-11-27 |
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