KR0125237Y1 - Wafer chuck for an etching apparatus - Google Patents

Wafer chuck for an etching apparatus Download PDF

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Publication number
KR0125237Y1
KR0125237Y1 KR2019940026787U KR19940026787U KR0125237Y1 KR 0125237 Y1 KR0125237 Y1 KR 0125237Y1 KR 2019940026787 U KR2019940026787 U KR 2019940026787U KR 19940026787 U KR19940026787 U KR 19940026787U KR 0125237 Y1 KR0125237 Y1 KR 0125237Y1
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South Korea
Prior art keywords
wafer
electrode portion
seated
center
etching apparatus
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KR2019940026787U
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Korean (ko)
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KR960015594U (en
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백인기
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문정환
엘지반도체주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection

Abstract

본 고안에 의한 웨이퍼 식각장치에서의 웨이퍼안착기구는 웨이퍼가 안착되는 전극부와, 전극부를 지지하는 포코스링과, 전극부와 포코스링 사이의 경계원상에 웨이퍼가 전극부의 정중앙에 안착되었는지를 감지하는 감지수단과, 전극부의 중앙에서 웨이퍼의 상하이동시에 사용되는 포코스침을 포함하여 이루어지며, 식각시킬 웨이퍼가 전극부의 정중앙에 안착되었는지를 감지하여 웨이퍼의 오염 혹은 불량을 방지한다.In the wafer etching apparatus according to the present invention, the wafer seating mechanism detects whether the wafer is seated at the center of the electrode part on the boundary circle between the electrode part, the focal ring supporting the electrode part, and the electrode part and the focal ring. It comprises a sensing means and a focal needle used at the same time of the wafer at the center of the electrode portion, and detects whether the wafer to be etched in the center of the electrode portion to prevent contamination or defect of the wafer.

Description

웨이퍼 식각장치에서의 웨이퍼안착기구Wafer Seating Mechanism in Wafer Etching Equipment

제1도는 종래의 웨이퍼안착기구를 도시한 도면.1 shows a conventional wafer seating mechanism.

제2도는 본 고안에 의한 웨이퍼안착기구를 도시한 도면.2 is a view showing a wafer seating mechanism according to the present invention.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

10,20 : 웨이퍼안착기구 11,21 : 전극부10,20: wafer seating mechanism 11,21: electrode part

11-1,21-1 : 전극부면 12,22 : 포코스링11-1,21-1: electrode face 12,22: focal ring

13,23 : 포코스침 24 : 감지수단13,23: Pocos needle 24: Detection means

25 : 웨이퍼 27 : 센싱부25 wafer 27 sensing unit

본 고안은 반도체 제작장비에서의 웨이퍼(wafer) 식각장치에 관한 것으로 특히, 반도체 웨이퍼 제작에서 한 장의 웨이퍼를 웨이퍼 식각장치에서의 웨이퍼안착기구에 안착되어지는 웨이퍼의 정확한 안착에 적당하도록 한 웨이퍼 식각장치에서의 웨이퍼안착기구에 관한 것이다.The present invention relates to a wafer etching apparatus in a semiconductor manufacturing equipment, and more particularly, a wafer etching apparatus in which a single wafer is suitable for accurate mounting of a wafer seated on a wafer seating mechanism in a wafer etching apparatus in semiconductor wafer manufacturing. A wafer seating mechanism in

반도체 제조장비에서 웨이퍼 식각장치는 개략적으로 웨이퍼 입구부(wafer entrance load lock)와, 메인 챔버(main chamber)와, 웨이퍼 출구부(wafer exit lock)로 이루어지며, 식각시킬 웨이퍼는 웨이퍼 입구부에서 메인 챔버와 웨이퍼 출구부의 순서로 전송되어 식각공정이 진행되고, 웨이퍼표면의 식각은 메인 챔버내에 설치된 웨이퍼안착기구에 안착되어 진행된다. 이때, 웨이퍼 식각장치내에서 웨이퍼의 전송 및 안착은 대부분 로보트 팔(Robert arm)에 의해 수행되어지며, 로보트 팔의 펴짐 정도에 따라 메인 챔버에 설치된 웨이퍼안착기구의 중심면에 웨이퍼가 정확하게 안착되었는가 하는 웨이퍼 정렬정도가 조종되어진다.In the semiconductor manufacturing equipment, the wafer etching apparatus is roughly composed of a wafer entrance load lock, a main chamber, and a wafer exit lock, and the wafer to be etched is main at the wafer inlet. The etching process is performed by transferring the chamber and the wafer exit portion, and the etching of the wafer surface is carried out by being seated on the wafer seating mechanism installed in the main chamber. At this time, the transfer and seating of the wafer in the wafer etching apparatus is mostly performed by the robot arm, and according to whether the robot arm is unfolded, is the wafer correctly placed on the center surface of the wafer seating mechanism installed in the main chamber? Wafer alignment is controlled.

그런데, 로보트 팔의 펴짐정도는 웨이퍼 식각장치의 정기적인 정비때에 웨이퍼의 정렬도를 점검하여 결정되나, 식각공정 진행중에는 발생할 수 있는 웨이퍼안착기구에서 안착되는 웨이퍼의 오정렬이 고려되어지지 않고, 식각공정의 프로그램 래시피(program recipe)에 의해서만 웨이퍼 식각을 수행하고, 웨이퍼의 전송이 행하여진다.By the way, the degree of straightening of the robot arm is determined by checking the wafer alignment during regular maintenance of the wafer etching apparatus, but the misalignment of the wafer seated in the wafer seating mechanism that may occur during the etching process is not taken into consideration. The wafer etching is carried out only by the program recipe of the process, and the wafer is transferred.

제1도는 종래의 웨이퍼안착기구를 도시한 단면으로, 첨부된 도면을 참고하여 종래의 웨이퍼안착기구의 구성을 설명하면 다음과 같다.1 is a cross-sectional view showing a conventional wafer seating mechanism, the configuration of the conventional wafer seating mechanism with reference to the accompanying drawings as follows.

종래의 웨이퍼안착기구(10)는 제1도에 도시된 바와 같이, 전극부(11)와 포코스링(focus ring)(12)과 포코스침(focus pin)(13)으로 이루어졌으며, 웨이퍼 식각장치의 로보트 팔에 의해서 웨이퍼는 웨이퍼안착기구의 중심면인 전극부면(11-1)에 안착되어 웨이퍼 뒷면과 전극부면이 접촉하게 된다.As shown in FIG. 1, the conventional wafer seating mechanism 10 includes an electrode part 11, a focus ring 12, and a focus pin 13, and a wafer etching apparatus. By the robot arm of the wafer, the wafer is seated on the electrode part surface 11-1, which is the center surface of the wafer mounting mechanism, and the back surface of the wafer and the electrode part surface come into contact with each other.

이때, 웨이퍼안착기구(10)에서 포코스링(12)은 웨이퍼가 안착되어지는 전극부(11)를 지지하며 포코스링의 표면높이는 전극부 표면보다 약간 높게 형성되어 있고, 포코스침(13)은 전극부(11)의 중앙에 형성되어 웨이퍼(25)를 상하이동시키는 역할을 한다.At this time, the focal ring 12 in the wafer seating mechanism 10 supports the electrode portion 11 on which the wafer is to be seated, and the surface height of the focal ring is slightly higher than the surface of the electrode portion, and the focal needle 13 is the electrode. It is formed in the center of the portion 11 and serves to move the wafer 25 up and down.

그러나, 웨이퍼 식각장치에서 로보트 팔에 의해 전송된 웨이퍼가 종래의 웨이퍼안착기구에서 전극부면에 정확하게 안착되지 않아도 웨이퍼 식각장치에 의한 웨이퍼의 식각공정이 진행되므로, 웨이퍼 표면의 식각정도의 균일도가 일정하게 되지 않고, 웨이퍼 표면의 특정부위가 과대식각되거나 과소식각되었다.However, even if the wafer transferred by the robot arm in the wafer etching apparatus is not accurately seated on the electrode portion in the conventional wafer mounting apparatus, the etching process of the wafer is performed by the wafer etching apparatus, so that the uniformity of the etching degree of the wafer surface is constant. Instead, certain portions of the wafer surface were overetched or underetched.

또한, 웨이퍼 식각장치에서 메인 챔버에 웨이퍼안착기구의 전극부에 웨이퍼가 수평하게 안착되지 않고 기울어져 안착됨에 따라, 로보트 팔에 의해 수행되는 웨이퍼의 전송 도중에 웨이퍼의 떨어뜨림 또는 파손이 유발되어 웨이퍼 전체의 오염 혹은 불량에 따른 웨이퍼 생산수율이 저하되는 문제가 발생하였다.In addition, as the wafer is tilted and seated on the electrode portion of the wafer seating mechanism in the main chamber in the wafer etching apparatus, the wafer is dropped or broken during transfer of the wafer performed by the robot arm, thereby causing the entire wafer to be broken. A problem arises in that the yield of wafers is reduced due to contamination or defects.

본 고안에서는 이러한 문제를 해결하기 위하여 안출된 것으로, 웨이퍼안착기구의 전극부에 안착되는 웨이퍼가 전극부의 정 중앙에 안착되었는지를 감지할 수 있도록 하여 웨이퍼의 오염 혹은 불량을 방지하는데에, 그 목적이 있다.The present invention has been made to solve such a problem, and to prevent the contamination or defect of the wafer by detecting whether the wafer seated on the electrode portion of the wafer seating mechanism is located in the center of the electrode portion. have.

본 고안에 의한 웨이퍼 식각장치에서의 웨이퍼안착기구는 웨이퍼가 안착되는 전극부와, 전극부를 지지하는 포코스링과, 전극부와 포코스링 사이의 경계원상에 웨이퍼가 전극부의 정중앙에 안착되었는지를 감지하는 감지수단과, 전극부의 중앙에서 웨이퍼의 상하이동시에 사용되는 포코스침을 포함하여 이루어진다.In the wafer etching apparatus according to the present invention, the wafer seating mechanism detects whether the wafer is seated at the center of the electrode part on the boundary circle between the electrode part, the focal ring supporting the electrode part, and the electrode part and the focal ring. It comprises a sensing means and a focal needle used at the same time of the wafer at the center of the electrode portion.

제2도 (a)와 (b)는 본 고안에 의한 웨이퍼안착기구를 도시한 도면으로, 이하 도면을 참고하여 본 고안에 의한 웨이퍼안착기구의 구조를 설명하면 다음과 같다.Figure 2 (a) and (b) is a view showing a wafer seating mechanism according to the present invention, the structure of the wafer seating mechanism according to the present invention with reference to the drawings as follows.

본 고안에 의한 웨이퍼안착기구(20)는 제2도 (a)에 도시된 바와 같이, 식각시킬 웨이퍼(25)가 안착되는 전극부(21)와, 전극부를 지지하는 포코스링(22)과, 전극부와 포코스링 사이의 경계원상에 웨이퍼(25)가 전극부의 정중앙에 안착되었는지를 감지하는 감지수단(24)과, 전극부의 중앙에서 웨이퍼의 상하이동시에 사용되는 포코스침(23)으로 이루어진다.The wafer seating mechanism 20 according to the present invention has an electrode portion 21 on which the wafer 25 to be etched is seated, a focal ring 22 supporting the electrode portion, as shown in FIG. Sensing means 24 for detecting whether the wafer 25 is seated at the center of the electrode portion on the boundary circle between the electrode portion and the focusing, and a focusing 23 used at the same time as the wafer at the center of the electrode portion.

이때 상기 감지수단(24)은 센싱부(27)가 상부면을 향하도록 형성되어 웨이퍼(25)의 저부 소정면이 감지수단(24)의 센서 상부면에 접촉하는지의 여부에 따라 경고장치를 가동하거나 공정을 중지하도록 형성된다.In this case, the sensing means 24 is formed such that the sensing unit 27 faces the upper surface, so that the warning device is operated depending on whether the predetermined surface of the bottom of the wafer 25 contacts the sensor upper surface of the sensing means 24. It is formed to stop the process.

따라서 상기 감지수단(24)은 웨이퍼(25)와의 접촉여부를 감지하는 접촉방식의 센서 또는 발광부와 수광부를 각각 형성하고 웨이퍼가 사이에 개재되어 광신호가 전달되지 않으면 웨이퍼가 불완전하게 안착된 것으로 판단하는 광센서 등을 사용한다. 본 고안에서는 접촉방식의 센서를 사용한 것을 바람직한 실시예로 하여 설명한다.Therefore, the sensing means 24 forms a contact sensor or a light emitting unit and a light receiving unit, respectively, for detecting contact with the wafer 25, and determines that the wafer is incompletely seated if the optical signal is not transmitted because the wafer is interposed therebetween. Use an optical sensor or the like. In the present invention, the use of a contact type sensor will be described as a preferred embodiment.

본 고안에 의한 웨이퍼 식각장치의 웨이퍼안착기구(20)에서도 웨이퍼(25)는 로보트 팔에 의해 전송되어 제2도 (a)에서 도시된 바와 같이 전극부면(21-1)의 정중앙에 정확하게 안착되는 경우에는 포코스링(22)과 전극부(21) 사이의 경계원상에 상부면을 향하여 형성된 감지수단(24)의 센싱부(27)와 상호 접촉되지 않는다. 따라서 상기 감지수단(24)과 연결된 경고장치 및 공정장치에 아무런 영향을 미치지 않는다.In the wafer seating mechanism 20 of the wafer etching apparatus according to the present invention, the wafer 25 is transferred by the robot arm to be accurately seated at the center of the electrode portion 21-1 as shown in FIG. In this case, the sensing unit 27 of the sensing means 24 formed on the boundary circle between the focal ring 22 and the electrode unit 21 is not in contact with each other. Therefore, it does not affect the warning device and the process equipment connected to the sensing means 24.

한편, 웨이퍼(25)가 전극부면(21-1)에 정확하게 안착되지 않고 제2도 (b)에서와 같이 포코스링(22)과 전극부(21) 사이의 경계원상의 상부면에 안착되는 경우에는 감지수단(24)이 이를 감지하여 웨이퍼(25)의 식각공정의 실시를 중단하게 한다.On the other hand, when the wafer 25 is not correctly seated on the electrode portion surface 21-1 and is seated on the upper surface on the boundary circle between the focal ring 22 and the electrode portion 21 as shown in FIG. 2B. The sensing means 24 detects this and stops the etching process of the wafer 25.

즉, 웨이퍼안착기구(20)의 감지수단(24)은 웨이퍼(25)가 안착되는 전극부(21)의 가장자리에 형성되고 센싱부(27)가 상부면을 향하도록 되어, 웨이퍼(25)가 전극부의 가장자리에 걸쳐져서 수평하지 않게 안착되었을 경우에, 상기 센싱부(27)와 웨이퍼(25)의 저부면 소정부위가 상호 맞닿아서 웨이퍼(25)가 전극부(21)상에 정확하게 안착되지 않았음이 감지되고 이러한 결과로 공정을 중지시키거나 생산 작업자가 측각적인 조치를 취할 수 있도록 경보음을 울리도록 되어 있다.That is, the sensing means 24 of the wafer seating mechanism 20 is formed at the edge of the electrode portion 21 on which the wafer 25 is seated and the sensing portion 27 faces the upper surface, so that the wafer 25 When it is not horizontally seated over the edge of the electrode portion, the sensing portion 27 and a predetermined portion of the bottom surface of the wafer 25 abut each other so that the wafer 25 is not accurately seated on the electrode portion 21. Not detected and the result is an alarm to stop the process or allow the production worker to take lateral measures.

본 고안에 의한 웨이퍼안착기구의 효과로는 식각시킬 웨이퍼가 전극부에 정확하게 안착되지 않은 경우에, 이를 전극부와 포코스링 사이의 경계원상에 형성시킨 감지수단이 감지하여 공정을 중단시키므로 생산 작업자의 즉각적인 조치가 가능하게 되며, 따라서 웨이퍼의 오염 또는 불량에 의한 손실을 방지할 수 있어서 웨이퍼의 생산수률의 향상된다.According to the effect of the wafer seating mechanism according to the present invention, when the wafer to be etched is not accurately seated on the electrode part, the sensing means formed on the boundary circle between the electrode part and the focal ring senses and stops the process. Immediate action is possible, so that loss due to contamination or defect of the wafer can be prevented, thereby improving the yield of the wafer.

Claims (3)

웨이퍼 식각장치에서의 웨이퍼안착기구에 있어서, 웨이퍼가 안착되는 전극부와, 상기 전극부를 지지하는 포코스링과, 상기 전극부와 포코스링 사이에 형성되어 웨이퍼가 전극부의 정중앙에 안착되었는지를 감지하는 감지수단과, 상기 전극부의 중앙에서 웨이퍼의 상하이동시에 사용되는 포코스침을 포함하여 이루어진 웨이퍼 식각장치에서의 웨이퍼안착기구.A wafer mounting mechanism in a wafer etching apparatus, comprising: an electrode portion on which a wafer is seated, a focal ring for supporting the electrode portion, and a sensing formed between the electrode portion and the focal ring to detect whether the wafer is seated at the center of the electrode portion And a focusing needle used at the same time as the wafer is moved at the center of the electrode portion. 제1항에 있어서, 상기 감지수단은 원형의 전극부의 가장자리에 형성시키는 것이 특징인 웨이퍼 식각장치에서의 웨이퍼안착기구.The wafer seating mechanism of claim 1, wherein the sensing unit is formed at an edge of a circular electrode unit. 제1항에 있어서, 상기 감지수단으로 센서를 사용하는 것이 특징인 웨이퍼 식각장치에서의 웨이퍼안착기구.The wafer seating mechanism of claim 1, wherein a sensor is used as the sensing means.
KR2019940026787U 1994-10-14 1994-10-14 Wafer chuck for an etching apparatus KR0125237Y1 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100843960B1 (en) * 2003-11-17 2008-07-03 동부일렉트로닉스 주식회사 Wafer mis-centering alarm apparatus and operating method of semiconductor fabrication equipment using the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100843960B1 (en) * 2003-11-17 2008-07-03 동부일렉트로닉스 주식회사 Wafer mis-centering alarm apparatus and operating method of semiconductor fabrication equipment using the same

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