JPS59193016A - Method of producing laminated condenser - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

[Detailed description of the invention] (Technical field of invention The present invention relates to a horn method for manufacturing a retention layer capacitor.

(a) Prior Art and Problems Conventionally, multilayer capacitors have been manufactured by applying and baking an electrode paste containing Ag/Pd metal particles and an appropriate amount of glassy frit as terminal electrodes. However, this method has the disadvantage that soldering due to oxidation of the metal causes poor quality, and that the terminal electrode is transferred into the semicircle due to soldering, resulting in damage to the terminal electrode.

In order to improve this drawback, a method has been proposed in which a nickel layer and a solder layer (or Sn) are provided on the terminal electrode by plating to improve solderability and solder breakage.

However, this method has the disadvantage that during plating, the plating solution enters into the extremely small voids (gaps) in the terminal electrode portion, deteriorating the electrical characteristics (particularly Qi1111).

(c) Purpose of the Invention The present invention has been devised to eliminate such disadvantages, and is aimed at improving the solderability of multilayer capacitors.

The purpose of this project is to improve its characteristics and to manufacture high-quality bond capacitors.

In order to achieve this object, the present invention has a large number of internal electrodes embedded in a ceramic dielectric, and the internal electrodes at the side ends are W6.
4. In the sawing method for manufacturing a capacitor in which a terminal electrode is provided on the surface to be exposed, 2) when providing a nickel layer and a solder layer on the single electrode portion, a silicon layer is provided on the terminal electrode portion. The composition is 7.

(E) Examples of the invention Next, the present invention will be explained with reference to the drawings.

According to the seat method, first, as shown in Fig. 1, a laminated ceramic element with internal electrodes 3 embedded in a ceramic dielectric 2 in multiples is made, and then this laminated ceramic element is made as shown in Fig. 2. H1 inside the side end of l; end surface 1 where electrode 3 is exposed
A multilayer capacitor element body 4 is prepared in which terminal electrodes 5 for plating resistance are provided at a and la.

Next, this G'fl? ii: The 1-densor element body 4 is soaked in, for example, a 1 to 20% silicone solution, and vacuum impregnated for, for example, 2 to 0 minutes. After that, this multilayer capacitor body 4
Take it out, use a centrifugal dehydrator for 20 seconds to 5 minutes to remove excess silicone, and then heat it at 150 to 250℃ for 1 hour.
After drying for a while and hardening the silicon, a silicon layer 7 is formed on the terminal electrode portion 5 of the capacitor element body 4 as shown in FIG.
Jru.

In history, after forming a nickel layer 9 by a plating method on a portion (i'f) of the silicon layer 7 of the MH capacitor body 6 shown in FIG. 3 corresponding to the terminal electrode 5, as shown in FIG. Further on top of 9, half 1 (((Pd Sn
) MlO is set to form a multilayer capacitor C of the present invention.

An example of a plating method for forming the nickel layer 9 and the solder layer 10 will now be described.

First, the multilayer capacitor body 6 shown in FIG. 3 was degreased with alkali and washed with ion-exchanged water. Next, it was immersed in oil in a surface treatment solution for surface activation, and then washed with ion-exchanged water. Wash. Next, the tar (current-carrying medium) and the capacitor element body 6 are mixed together and subjected to Haller's plating using a nickel sulfamate plating solution to form the condenser element body 8 shown in FIG. Next, washing is performed with ion-exchanged water, and solder plating is performed using a solder plating bath using the Hallel Menogi force method as described above. Next, the capacitor is washed with ion-exchanged water, dried and heat-treated again to form a multilayer capacitor C shown in FIG.

In the plating process, pH, /I! ! degree, liquid concentration.

Needless to say, time, voltage, current, and cleaning are control points. In addition, the above plating method is an example,
It is not limited to this.

Next, the experimental results according to the present invention are shown in the table.

Medium No, l is 2125 type C 100)) F and No
.

2 used the same type SF, 470 PF, and the Q value was determined to be defective when Qi*2000 or more was considered good and less than 2000 was considered bad. Furthermore, the conventional method refers to a method in which a nickel layer and a solder layer are formed by plating without providing a silicon layer.

In the present invention, the electrical properties (Q (A
) The main purpose is to prevent the deterioration of the silicon layer, but since the silicon layer is formed based on the immersion force/l:, it is formed on the entire surface including the ceramic part. However, 5. the formation of this silicon layer does not cause any damage to the ceramic part, and it is thought that the same effect as that of the terminal electrode is exerted on the ceramic part as well.

(G) Effects of the Invention As described above, according to the present invention, without directly providing a nickel layer and a solder layer on a multilayer capacitor body provided with terminal electrodes,
Once the silicon sphere is provided, the plating solution will not penetrate into the extremely small voids in the terminal electrode part during the plating process for forming the nickel layer and the solder layer, and the plating process will be (i(f) Actually, half of the multilayer capacitor is 131 (N
Scratchability and solder cracking (11゛) are improved, and deterioration of electrical characteristics, especially Q value, can be prevented.

Further, since the silicon layer covers the entire surface of the ceramic dielectric, the inside of the ceramic dielectric is reliably protected, and a high-quality multilayer capacitor can be obtained.

[Brief explanation of drawings]

FIG. 5 is a cross-sectional view showing the manufacturing process in an embodiment of the present invention, and FIG. 6 is an enlarged cross-sectional view of the entrance in FIG. 5. ■... Multilayer capacitor element, 2... Ceramic dielectric, 3... Internal electrode, 4.6.8... Multilayer capacitor element, 5... Terminal electrode, 7... Silicon layer, 9・
...Nickel ILIO...solder layer, C...M layer capacitor. Figure 1 Figure 5 Figure 9 °/ Figure 2] Figure 14 Figure 6

Claims (1)

[Scope of Claims] (11) A method for manufacturing a multilayer capacitor in which a large number of internal electrodes are buried in a ceramic dielectric and terminal electrodes are provided on the surfaces where the internal electrodes are exposed at the side ends, wherein the terminal electrode portions include a nickel layer and A method for manufacturing a multilayer capacitor, characterized in that when providing a solder layer, a silicon layer is provided on the terminal electrode portion. (2) Claims characterized in that the silicon layer is provided by a t+?N method. 2. The method for manufacturing a multilayer capacitor according to item 1.