JPS59222901A - Method of producing ceramic electronic part - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing ceramic electronic components such as positive temperature coefficient thermistors and capacitors.

Conventionally, in this type of ceramic electronic components, Ni and C
It has been practiced to apply an electroless plating film such as U as an electrode. However, this plating film is usually heat-treated in order to obtain stability as an electrode. However, when the plated film is heat-treated in an oxidizing atmosphere, the surface becomes oxidized, which greatly affects the subsequent soldering of lead terminals.

Therefore, when actually soldering the lead terminals, use a strong
However, this flux has problems such as significantly lowering the withstand voltage level as an electronic component and deteriorating its characteristics. In particular, deterioration of resistance-temperature characteristics in the case of positive temperature coefficient thermistors has been a major problem.

In view of this problem, in the past, the heat treatment was neutral or the equipment and conditions were special, making it difficult to mass produce and increasing costs. A new problem has arisen in that the characteristics deteriorate when exposed to this atmosphere. In addition, in the past, A
G electrodes have also been added, but expensive Ag
The use of electrodes significantly increases the product cost, which is also a major problem in practice.

SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a method for manufacturing ceramic electronic components of excellent quality, constant production, and low cost.

In summary, the present invention polishes the surface of an electroless plating film that has been irradiated and heat-treated on the surface of a ceramic substrate by ω1 polishing with granular semi-finish, removes the oxide film on the surface, and then attaches the lead terminals. Akizuru Relami kicks Handa. In the following description, a barium ditanate-based semiconductor substrate is used as the ceramic element.

FIG. 1 shows a state in which electroless Ni plating films 2, 2 are applied to both surfaces of a ceramic unit 1.

In order to avoid ohmic contact with the ceramic substrate 1, the plating films 2, 2 are heat-treated at a temperature of about 300°C. As shown in the nail diagram Z, an abrasive material is added to the oxide film layer (NiOx > 3.3 is not a forming material). Store with. This abrasive is approximately 0.
Particulate solder having a particle size of about 1 to 2.5 μm takes out the base body 1 . As shown in Figure 3, the taken out ceramic substrate has the Ni oxide film layers 3, 3 removed by grinding with the granular solder as the rtll Ia material, and the granular solder is replaced with N.
It is attached as shown in 4.4 while remaining on the i-plated films 2, 2. This is because the granular solder, which acts as an abrasive, is attached during rubbing. Further, the surfaces of the Ni plating films 2, 2 are roughened by being polished.

Thereafter, as shown in FIG. 4, the lead terminals 5.5 are brought into contact with the Ni plating films 2, 2 on which the remaining 11 pieces of solder 4, 4 are attached, and soldered with new solder. This soldering is performed, for example, by dipping oil into molten solder. In this case, the solder 4.4 remaining on the N1 plating films 2, 2 will naturally melt and be mixed into the new solder, but at this time, it is necessary to improve the adhesion of the new solder. It has an effect. From this, solder as an abrasive material and new solder are
It is desirable to use one that is available or of the same quality. In FIG. 4, solder 4.4 is shown to be interposed between the lead terminals 5, 5 and the Ni plating films 2, 2, but this is due to the solder remaining after polishing.
, 5 are prevented from coming into direct contact with the N1 plating film. According to this, the lead terminals 5.5 are essentially buried in the solder, so the lead terminals 5.5.
The fixation strength of No. 5 increases. Note that such a state can be easily obtained by adjusting the amount of remaining solder.

In the above embodiment, a semiconductor substrate is used as the ceramic substrate, but other dielectric materials may be used, and the material of the plating film, the polishing method, etc. can be arbitrarily selected.

As described above, in the method for manufacturing ceramic electronic components of the present invention, by adding the step of polishing and removing the oxide film layer on the plating film with granular solder, the lead terminals can be soldered well without using flux. This makes it possible to obtain products with stable characteristics. In addition, in the present invention, since the surface of the plating film is roughened by polishing, it not only improves the adhesive strength of the lead terminal, but also eliminates the need for the use of expensive Ag, making it possible to save resources at low cost. The effect is human.

[Brief explanation of drawings]

1 to 4 are side sectional views showing the manufacturing process of the present invention. 1...Ceramic base, 2...Plating film 3...Oxide film layer, 4...Solder 5...
...Lead terminal patent applicant Murata Manufacturing Co., Ltd.

Claims (1)

[Claims] A ceramic electronic device characterized in that a ceramic substrate having an electroless plating film applied to its surface is heat-treated, the surface of the plating film is polished off with granular solder, and then a lead terminal is soldered to the top of the plating. How the parts are manufactured.