JPS59184523A - バイポーラトランジスタの製造方法 - Google Patents

バイポーラトランジスタの製造方法

Info

Publication number
JPS59184523A
JPS59184523A JP58059526A JP5952683A JPS59184523A JP S59184523 A JPS59184523 A JP S59184523A JP 58059526 A JP58059526 A JP 58059526A JP 5952683 A JP5952683 A JP 5952683A JP S59184523 A JPS59184523 A JP S59184523A
Authority
JP
Japan
Prior art keywords
semiconductor integrated
region
integrated circuit
film
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58059526A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0257703B2 (enrdf_load_stackoverflow
Inventor
Tadashi Kishi
正 岸
Kenji Kanezaki
金崎 賢治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yokogawa Electric Corp
Original Assignee
Yokogawa Hokushin Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yokogawa Hokushin Electric Corp filed Critical Yokogawa Hokushin Electric Corp
Priority to JP58059526A priority Critical patent/JPS59184523A/ja
Publication of JPS59184523A publication Critical patent/JPS59184523A/ja
Publication of JPH0257703B2 publication Critical patent/JPH0257703B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Formation Of Insulating Films (AREA)
JP58059526A 1983-04-05 1983-04-05 バイポーラトランジスタの製造方法 Granted JPS59184523A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58059526A JPS59184523A (ja) 1983-04-05 1983-04-05 バイポーラトランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58059526A JPS59184523A (ja) 1983-04-05 1983-04-05 バイポーラトランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS59184523A true JPS59184523A (ja) 1984-10-19
JPH0257703B2 JPH0257703B2 (enrdf_load_stackoverflow) 1990-12-05

Family

ID=13115801

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58059526A Granted JPS59184523A (ja) 1983-04-05 1983-04-05 バイポーラトランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS59184523A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009018193A (ja) * 2008-10-03 2009-01-29 Twinbird Corp ブラシ装置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0416004U (enrdf_load_stackoverflow) * 1990-05-31 1992-02-10

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53115173A (en) * 1977-03-18 1978-10-07 Hitachi Ltd Production of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53115173A (en) * 1977-03-18 1978-10-07 Hitachi Ltd Production of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009018193A (ja) * 2008-10-03 2009-01-29 Twinbird Corp ブラシ装置

Also Published As

Publication number Publication date
JPH0257703B2 (enrdf_load_stackoverflow) 1990-12-05

Similar Documents

Publication Publication Date Title
JPS59184523A (ja) バイポーラトランジスタの製造方法
JPH0465528B2 (enrdf_load_stackoverflow)
JPS60113967A (ja) 半導体装置の製造方法
JPS5984543A (ja) バイポ−ラ集積回路装置およびその製造方法
JPS5965465A (ja) 半導体装置の製造方法
JPS5929458A (ja) 半導体装置
JPH02278736A (ja) 半導体装置
JPH0258367A (ja) 半導体装置
JPS5966168A (ja) 半導体装置の製法
JPS63144567A (ja) 半導体装置の製造方法
JPH0582985B2 (enrdf_load_stackoverflow)
JPH01189159A (ja) 半導体集積回路装置の製造方法
JPS60182736A (ja) 半導体装置の製造方法
JPH0334330A (ja) 半導体装置
JPS63284855A (ja) 半導体装置の製造方法
JPS6020555A (ja) 半導体装置
JPS63273354A (ja) 半導体集積回路の製造方法
JPS58212171A (ja) 半導体装置
JPS60103640A (ja) 半導体装置
JPS5916369A (ja) 半導体集積回路装置の製法
JPS60101966A (ja) 半導体集積回路の製造方法
JPH0488637A (ja) 縦型バイポーラトランジスタを有する半導体集積回路装置
JPS61108162A (ja) 半導体装置およびその製造方法
JPS5898956A (ja) 半導体装置の製造方法
JPH0786418A (ja) 半導体装置の製造方法及び半導体装置