JPS59181531A - 拡散領域の形成方法 - Google Patents
拡散領域の形成方法Info
- Publication number
- JPS59181531A JPS59181531A JP5367283A JP5367283A JPS59181531A JP S59181531 A JPS59181531 A JP S59181531A JP 5367283 A JP5367283 A JP 5367283A JP 5367283 A JP5367283 A JP 5367283A JP S59181531 A JPS59181531 A JP S59181531A
- Authority
- JP
- Japan
- Prior art keywords
- silicon substrate
- type silicon
- diffusion region
- treatment
- oxidizing atmosphere
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000009792 diffusion process Methods 0.000 title claims abstract description 25
- 230000015572 biosynthetic process Effects 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 238000010438 heat treatment Methods 0.000 claims abstract description 23
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 22
- 239000010703 silicon Substances 0.000 claims abstract description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 18
- 230000001590 oxidative effect Effects 0.000 claims abstract description 11
- 239000012298 atmosphere Substances 0.000 claims abstract description 9
- 230000004913 activation Effects 0.000 claims abstract description 5
- 238000005468 ion implantation Methods 0.000 claims abstract description 3
- 150000002500 ions Chemical class 0.000 claims description 9
- 230000003213 activating effect Effects 0.000 claims description 2
- 230000007547 defect Effects 0.000 abstract description 16
- 239000013078 crystal Substances 0.000 abstract description 9
- -1 Boron fluoride ions Chemical class 0.000 abstract description 6
- 238000000137 annealing Methods 0.000 abstract description 6
- 238000005224 laser annealing Methods 0.000 abstract description 4
- 238000005530 etching Methods 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910015900 BF3 Inorganic materials 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 239000012535 impurity Substances 0.000 description 13
- 229910052796 boron Inorganic materials 0.000 description 12
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 238000004969 ion scattering spectroscopy Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 210000003323 beak Anatomy 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000005465 channeling Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000000790 scattering method Methods 0.000 description 2
- YMHOBZXQZVXHBM-UHFFFAOYSA-N 2,5-dimethoxy-4-bromophenethylamine Chemical compound COC1=CC(CCN)=C(OC)C=C1Br YMHOBZXQZVXHBM-UHFFFAOYSA-N 0.000 description 1
- 241000545067 Venus Species 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- General Physics & Mathematics (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5367283A JPS59181531A (ja) | 1983-03-31 | 1983-03-31 | 拡散領域の形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5367283A JPS59181531A (ja) | 1983-03-31 | 1983-03-31 | 拡散領域の形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59181531A true JPS59181531A (ja) | 1984-10-16 |
| JPS641925B2 JPS641925B2 (enrdf_load_stackoverflow) | 1989-01-13 |
Family
ID=12949319
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5367283A Granted JPS59181531A (ja) | 1983-03-31 | 1983-03-31 | 拡散領域の形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59181531A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61145818A (ja) * | 1984-12-20 | 1986-07-03 | Sony Corp | 半導体薄膜の熱処理方法 |
| JPS61283133A (ja) * | 1985-06-10 | 1986-12-13 | Hitachi Ltd | 半導体素子の製造方法 |
| JP2003059856A (ja) * | 2001-08-09 | 2003-02-28 | Fuji Electric Co Ltd | 半導体装置の製造方法 |
-
1983
- 1983-03-31 JP JP5367283A patent/JPS59181531A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61145818A (ja) * | 1984-12-20 | 1986-07-03 | Sony Corp | 半導体薄膜の熱処理方法 |
| JPS61283133A (ja) * | 1985-06-10 | 1986-12-13 | Hitachi Ltd | 半導体素子の製造方法 |
| JP2003059856A (ja) * | 2001-08-09 | 2003-02-28 | Fuji Electric Co Ltd | 半導体装置の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS641925B2 (enrdf_load_stackoverflow) | 1989-01-13 |
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