JPS633448B2 - - Google Patents

Info

Publication number
JPS633448B2
JPS633448B2 JP54125047A JP12504779A JPS633448B2 JP S633448 B2 JPS633448 B2 JP S633448B2 JP 54125047 A JP54125047 A JP 54125047A JP 12504779 A JP12504779 A JP 12504779A JP S633448 B2 JPS633448 B2 JP S633448B2
Authority
JP
Japan
Prior art keywords
type
layer
germanium substrate
germanium
guard ring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54125047A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5649523A (en
Inventor
Shuzo Kagawa
Takao Kaneda
Tatsuaki Shirai
Yasuo Baba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP12504779A priority Critical patent/JPS5649523A/ja
Priority to US06/187,419 priority patent/US4415370A/en
Priority to EP80303334A priority patent/EP0026629B1/en
Priority to DE8080303334T priority patent/DE3071864D1/de
Publication of JPS5649523A publication Critical patent/JPS5649523A/ja
Publication of JPS633448B2 publication Critical patent/JPS633448B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/265Bombardment with radiation with high-energy radiation producing ion implantation

Landscapes

  • Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
JP12504779A 1979-09-28 1979-09-28 Manufacture of semiconductor device Granted JPS5649523A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP12504779A JPS5649523A (en) 1979-09-28 1979-09-28 Manufacture of semiconductor device
US06/187,419 US4415370A (en) 1979-09-28 1980-09-15 Method of beryllium implantation in germanium substrate
EP80303334A EP0026629B1 (en) 1979-09-28 1980-09-24 Methods of manufacturing semiconductor devices, for example photodiodes, and devices so manufactured
DE8080303334T DE3071864D1 (en) 1979-09-28 1980-09-24 Methods of manufacturing semiconductor devices, for example photodiodes, and devices so manufactured

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12504779A JPS5649523A (en) 1979-09-28 1979-09-28 Manufacture of semiconductor device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP57216037A Division JPS5943834B2 (ja) 1982-12-09 1982-12-09 半導体受光装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5649523A JPS5649523A (en) 1981-05-06
JPS633448B2 true JPS633448B2 (enrdf_load_stackoverflow) 1988-01-23

Family

ID=14900513

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12504779A Granted JPS5649523A (en) 1979-09-28 1979-09-28 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5649523A (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58182225A (ja) * 1982-04-20 1983-10-25 Nec Corp pn接合の形成方法
JPS5936978A (ja) * 1982-08-24 1984-02-29 Fujitsu Ltd 半導体装置の製造方法
JPS60168325U (ja) * 1984-04-16 1985-11-08 株式会社クボタ 歩行型芝刈機
JPS60168324U (ja) * 1984-04-16 1985-11-08 株式会社クボタ 歩行型芝刈機

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2728711A1 (de) * 1976-08-10 1978-02-16 Ibm Verfahren zum herstellen von halbleiterbauelementen aus verbindungshalbleitermaterial

Also Published As

Publication number Publication date
JPS5649523A (en) 1981-05-06

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