JPS6259898B2 - - Google Patents

Info

Publication number
JPS6259898B2
JPS6259898B2 JP57059235A JP5923582A JPS6259898B2 JP S6259898 B2 JPS6259898 B2 JP S6259898B2 JP 57059235 A JP57059235 A JP 57059235A JP 5923582 A JP5923582 A JP 5923582A JP S6259898 B2 JPS6259898 B2 JP S6259898B2
Authority
JP
Japan
Prior art keywords
light
layer
dose
dark current
guard ring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57059235A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58176978A (ja
Inventor
Shuzo Kagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57059235A priority Critical patent/JPS58176978A/ja
Publication of JPS58176978A publication Critical patent/JPS58176978A/ja
Publication of JPS6259898B2 publication Critical patent/JPS6259898B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes

Landscapes

  • Light Receiving Elements (AREA)
JP57059235A 1982-04-09 1982-04-09 受光素子の製造方法 Granted JPS58176978A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57059235A JPS58176978A (ja) 1982-04-09 1982-04-09 受光素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57059235A JPS58176978A (ja) 1982-04-09 1982-04-09 受光素子の製造方法

Publications (2)

Publication Number Publication Date
JPS58176978A JPS58176978A (ja) 1983-10-17
JPS6259898B2 true JPS6259898B2 (enrdf_load_stackoverflow) 1987-12-14

Family

ID=13107513

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57059235A Granted JPS58176978A (ja) 1982-04-09 1982-04-09 受光素子の製造方法

Country Status (1)

Country Link
JP (1) JPS58176978A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0311816A1 (de) * 1987-10-15 1989-04-19 BBC Brown Boveri AG Halbleiterbauelement und Verfahren zu dessen Herstellung

Also Published As

Publication number Publication date
JPS58176978A (ja) 1983-10-17

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