JPS59181042A - 樹脂封止型半導体装置 - Google Patents

樹脂封止型半導体装置

Info

Publication number
JPS59181042A
JPS59181042A JP58056260A JP5626083A JPS59181042A JP S59181042 A JPS59181042 A JP S59181042A JP 58056260 A JP58056260 A JP 58056260A JP 5626083 A JP5626083 A JP 5626083A JP S59181042 A JPS59181042 A JP S59181042A
Authority
JP
Japan
Prior art keywords
semiconductor device
organic polymer
resin
fine metal
wirings
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58056260A
Other languages
English (en)
Inventor
Saburo Omori
大森　三郎
Kazuyuki Kuwata
和幸 桑田
Yasuhito Momota
百田　康仁
Kazuyuki Miki
三木　和幸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nitto Denko Corp
Original Assignee
Nitto Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nitto Electric Industrial Co Ltd filed Critical Nitto Electric Industrial Co Ltd
Priority to JP58056260A priority Critical patent/JPS59181042A/ja
Publication of JPS59181042A publication Critical patent/JPS59181042A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49517—Additional leads
    • H01L23/4952—Additional leads the additional leads being a bump or a wire
    • H—ELECTRICITY
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/4554—Coating
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 本発明は樹脂封止型半導体装置に関する。
近年ＩＣ，ＬＳＩの如き半導体素子を熱硬化性樹脂成形
材料によって封止してなる、いわゆるプラスチックバー
ケージが盛んに採用され、経済性の面で非常に大きな効
果をもたらしている。
上記成形材料としては低圧成形用エポキシ樹脂成形材料
が代表的に使用されているが、これらを用いて封止して
得られた半導体装置では、成形材料硬化物の耐湿性が劣
るため、金属細線が腐食し、ひどい場合には断線に至る
欠点を有する。
本発明はこのような欠点を改良してなるもので、半導体
素子上の電極パッドと外部リードを接続するための金属
細線として、有機高分子被膜形成金属細線を用いること
を特徴とする樹脂封止型半導体装置に関するものである
。
以下図面により本考案を説明する。
第１図において、１はパワートランジスタラ封止してな
る半導体装置で、（２）は放熱フィン、（３）は銀ペー
スト等よりなるグイボンド、（４）は半導体素子、（５
）ハシリコーン樹脂、ポリイミド樹脂等のジャンクショ
ンコーティングレジン、（６）は外ｇｌＪｌビードーム
、（７）はこれらを一体内にモールドしてなるエポキシ
樹脂成形材料の如き熱硬化性樹脂成形材料の硬化物であ
る。
（８）は半導体素子の電極パッドと外部リードを接続す
る、有機高分子被膜を形成した金属細線で、７その一部
拡大斜視図は第２図に示される。
第２図において（８１）はアルミニー−ム、金等よりな
る金属細線、（８２）は有機高分子被膜で、シリコーン
樹脂、ボリイミ１″樹脂、ポリエステル樹脂ポリエチレ
ン、アクリル系樹脂等よりなるが、特にビニル基を分子
中に有するシリコーン樹脂（たとえば信越化学工業社製
、商品名ＫＲ−２１９等）が好ましい。
第１図の如き半導体装置を得るには、 放熱フィン上にダイポンド用接着剤を用すて半導体素子
全ダイボンドして後、有機高分子被膜形成金属細線を用
いて、素子と外部リードフレームをワイヤーボンドし、
さらにジャンクションコーティングレジンで素子近傍を
被覆して後、これらをエポキシ樹脂成形材料゛を用いて
一体モールＦすることにより製造できる。
また上記において裸の金属細線を用いて素子と外部リー
ドフレームをワイヤーボンドし几場合には、ジャンクシ
冒ンコーテイングレジンによる素子近傍の被覆に先立っ
て、有機高分子材料で金属細線を被覆し、他は上記と同
様の要領で半導体装置を得ることができる。
さらに本発ＦＩＡにおいては、上記におｈてジャンクシ
曽ンコーティングレジンのコーチインフラ省略してエポ
キシ樹脂成形材料により一体モールド本発明において金
属細線に有機高分子被覆を形成させるには、たとえば、
前記ビニルを分子中に有するシリコーン樹脂（信越化学
工業社製、商品名ＫＲ−２１９、棄Ｖシリコーン社製商
品名ＪＣＲ−６１０６，６１０８等）１００重量部に対
し、光増１ｉ１１１Ｊ（ベンゾイン−７１−ブチルエー
テル、ベンゾインエチルエーテル、ベンゾインイソブチ
ルエーテル、ベンゾインイソプロピルエーテル、ベンジ
ルジメチルケタール、Ｎ−Ｎ−テトラエチル−４・４−
ジアミノベンゾフェノン、ジベンゾスベロン等）　０，
０１〜５重量部好ましくは１．０〜２．０重量部を添加
してｈる塗料を通常のエナメル電線と同様の製造方法（
ダイス引塗布法、フェルト引塗布法）により塗布し、紫
外線ランプ照射等により、硬化させ硬化塗膜（たとえば
厚み１〜３０μ）を形成させればよい。
半導体素子に金属細線をワイヤーボンドｌ−で後有機高
分子被膜を施すときには、金属細線にたとえば上記シリ
コーン樹脂を塗５１−１熱硬化（たとえば１６０℃で５
時間）および／または前記の紫外線硬化操作を施すこと
ができる。
本考案によると、上記の如く金属細線は半導体装置で有
機高分子被膜により被覆されているので湿気により金属
細線が腐食されることもなく、従って湿気雰囲気下で用
いても半導体装置の特性が劣化することはない。
以下本発明を実施例を用いて説明する。
実施例中の部は重量部である。
実施例１〜９ 下記第１表に示す配合により各配合成分を均一に混合し
て塗料を製造した。
次いでアルミニューム細線に前記配合の塗料を塗布し、
３基の紫外線ランプ（２ＫＷＵＶランプ、長さ１００６
）を用いて、線速１０１８　／　ｉの条件で硬化させ、
厚み１ｏμの被膜を形成させて、有機高分子被覆金属細
線を得た。
放熱フィン上にダイボンド用接着剤（日東電工社製、ポ
リイミド系銀ペースト商品名Ｊ　Ｒ−１０００）を用す
て半導体素子（パワートランジスタ）を１２０℃で３０
分、２００℃で１時間とそれに引き続＜２５０ｔで１時
間の条件でダイボンドし、さらに前記素子と外部リード
フレーム間を上記有機高分子被覆形成金属細線によりワ
イヤーボンドし、次いでエポキシ樹脂成形材料（日東電
工社製、商品名ＭＰ−３０００）により１７０℃２分の
条件で一体モールドし、第１図に示す如き半導体装置を
得た。
比較例 有機高分子被覆形成金属細線の代りにアルミニューム細
線を用いる以外は、すべて前記実施例記載の要領で半導
体装置を得た。
実施例１〜９および比較例により得られた半導体装置に
ついて、プレッシャークッカーテス）？行なった結果を
下記第２表に示す。
第　　　２　　　表 第２表においてプレッシャークツカーテストは、半導体
装置の各５０ケを１２１℃、２気圧の水蒸気圧下に、第
２表に示す時間放置し、アルミニー−ム細線が断線（抵
抗値４００以上）となったちび）を不良とした。
第２表の結果において分母は半導体装置の試料個数、分
子は不良数を示す。
【図面の簡単な説明】
第１図は本発明の実例を示す半導体装置の断面図、第２
図は本発明の半導体装置の一構成要素である竹機高分子
被債金属細線の実例を示す斜視図である。 １・・・・・・半導体装置　　２・・・・・・放熱フィ
ン４・・・・・・半導体素子 特許出頭人 日東電気工業株式会社 代表者　土　方　三　部 第１図

Claims (1)

    【特許請求の範囲】
  1. 半導体素子上の電極パッドと外部リードを接続するため
    の金属細線として、有機高分子被膜形成金属細線を用い
    ることを特徴とする樹脂封止型半導体装置。
JP58056260A 1983-03-30 1983-03-30 樹脂封止型半導体装置 Pending JPS59181042A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58056260A JPS59181042A (ja) 1983-03-30 1983-03-30 樹脂封止型半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58056260A JPS59181042A (ja) 1983-03-30 1983-03-30 樹脂封止型半導体装置

Publications (1)

Publication Number Publication Date
JPS59181042A true JPS59181042A (ja) 1984-10-15

Family

ID=13022106

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58056260A Pending JPS59181042A (ja) 1983-03-30 1983-03-30 樹脂封止型半導体装置

Country Status (1)

Country Link
JP (1) JPS59181042A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0540342U (ja) * 1991-09-06 1993-06-01 大和コンクリート工業株式会社 マンホールの筒壁ブロツクと通水管の接合構造

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0540342U (ja) * 1991-09-06 1993-06-01 大和コンクリート工業株式会社 マンホールの筒壁ブロツクと通水管の接合構造

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