JPS59178719A - 電子ビームアニール方法 - Google Patents

電子ビームアニール方法

Info

Publication number
JPS59178719A
JPS59178719A JP58052426A JP5242683A JPS59178719A JP S59178719 A JPS59178719 A JP S59178719A JP 58052426 A JP58052426 A JP 58052426A JP 5242683 A JP5242683 A JP 5242683A JP S59178719 A JPS59178719 A JP S59178719A
Authority
JP
Japan
Prior art keywords
electron beam
sample
film
electron
polycrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58052426A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0136970B2 (cg-RX-API-DMAC10.html
Inventor
Kazumichi Omura
大村　八通
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP58052426A priority Critical patent/JPS59178719A/ja
Publication of JPS59178719A publication Critical patent/JPS59178719A/ja
Publication of JPH0136970B2 publication Critical patent/JPH0136970B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/3818—

Landscapes

  • Recrystallisation Techniques (AREA)
JP58052426A 1983-03-30 1983-03-30 電子ビームアニール方法 Granted JPS59178719A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58052426A JPS59178719A (ja) 1983-03-30 1983-03-30 電子ビームアニール方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58052426A JPS59178719A (ja) 1983-03-30 1983-03-30 電子ビームアニール方法

Publications (2)

Publication Number Publication Date
JPS59178719A true JPS59178719A (ja) 1984-10-11
JPH0136970B2 JPH0136970B2 (cg-RX-API-DMAC10.html) 1989-08-03

Family

ID=12914446

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58052426A Granted JPS59178719A (ja) 1983-03-30 1983-03-30 電子ビームアニール方法

Country Status (1)

Country Link
JP (1) JPS59178719A (cg-RX-API-DMAC10.html)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61212012A (ja) * 1985-03-16 1986-09-20 Agency Of Ind Science & Technol Ｓｏｉ構造形成方法
JPS62208620A (ja) * 1986-03-10 1987-09-12 Agency Of Ind Science & Technol 半導体装置の製造方法
JPS62250631A (ja) * 1986-04-24 1987-10-31 Agency Of Ind Science & Technol 半導体薄膜結晶層の製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57133626A (en) * 1981-02-13 1982-08-18 Toshiba Corp Manufacture of semiconductor thin film
JPS58112323A (ja) * 1981-12-26 1983-07-04 Fujitsu Ltd 電子ビ−ムアニ−ル方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57133626A (en) * 1981-02-13 1982-08-18 Toshiba Corp Manufacture of semiconductor thin film
JPS58112323A (ja) * 1981-12-26 1983-07-04 Fujitsu Ltd 電子ビ−ムアニ−ル方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61212012A (ja) * 1985-03-16 1986-09-20 Agency Of Ind Science & Technol Ｓｏｉ構造形成方法
JPS62208620A (ja) * 1986-03-10 1987-09-12 Agency Of Ind Science & Technol 半導体装置の製造方法
JPS62250631A (ja) * 1986-04-24 1987-10-31 Agency Of Ind Science & Technol 半導体薄膜結晶層の製造方法

Also Published As

Publication number Publication date
JPH0136970B2 (cg-RX-API-DMAC10.html) 1989-08-03

Similar Documents

Publication Publication Date Title
KR950015614A (ko) 반도체 장치와 그 제조 방법
US3336159A (en) Method for growing single thin film crystals
JPS59178719A (ja) 電子ビームアニール方法
JPS5863173A (ja) 多結晶薄膜トランジスタ
JPS5856406A (ja) 半導体膜の製造方法
JPS6342112A (ja) 多結晶シリコン薄膜の形成方法
JP3287834B2 (ja) 多結晶半導体薄膜の熱処理方法
JPS5893243A (ja) ポリシリコン薄膜半導体の改善方法
JPS63283013A (ja) 多結晶シリコン薄膜の形成方法
JPH0311727A (ja) 半導体薄膜の製造方法
McMahon et al. Application of electron beams in thermal processing of semiconductor materials and devices
JPH02140916A (ja) 薄膜トランジスタの製造方法
JPS5856405A (ja) 半導体装置の製造方法
JPS5912015B2 (ja) 半導体装置
JP2526378B2 (ja) 半導体単結晶層の製造方法
JPS58139423A (ja) ラテラルエピタキシヤル成長法
JPH0361335B2 (cg-RX-API-DMAC10.html)
JPS6276514A (ja) 半導体装置の製造方法
JPS61201414A (ja) シリコン単結晶層の製造方法
JPH10163109A (ja) 光ビームアニーリング法
JP2569402B2 (ja) 半導体薄膜結晶層の製造方法
JPS62165908A (ja) 単結晶薄膜の形成方法
JPS6140895A (ja) ソリツド物質を再結晶させるための方法および装置
JPS59101822A (ja) 半導体装置用基板の製造方法
JPS63265421A (ja) 半導体単結晶層の製造方法