JPS59169369U - 液相エピタキシヤル成長装置 - Google Patents

液相エピタキシヤル成長装置

Info

Publication number
JPS59169369U
JPS59169369U JP6318883U JP6318883U JPS59169369U JP S59169369 U JPS59169369 U JP S59169369U JP 6318883 U JP6318883 U JP 6318883U JP 6318883 U JP6318883 U JP 6318883U JP S59169369 U JPS59169369 U JP S59169369U
Authority
JP
Japan
Prior art keywords
raw material
crucible
epitaxial growth
substrate holder
liquid phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6318883U
Other languages
English (en)
Japanese (ja)
Other versions
JPS6120042Y2 (enrdf_load_stackoverflow
Inventor
勝井　明憲
税男 上村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP6318883U priority Critical patent/JPS59169369U/ja
Publication of JPS59169369U publication Critical patent/JPS59169369U/ja
Application granted granted Critical
Publication of JPS6120042Y2 publication Critical patent/JPS6120042Y2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP6318883U 1983-04-27 1983-04-27 液相エピタキシヤル成長装置 Granted JPS59169369U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6318883U JPS59169369U (ja) 1983-04-27 1983-04-27 液相エピタキシヤル成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6318883U JPS59169369U (ja) 1983-04-27 1983-04-27 液相エピタキシヤル成長装置

Publications (2)

Publication Number Publication Date
JPS59169369U true JPS59169369U (ja) 1984-11-13
JPS6120042Y2 JPS6120042Y2 (enrdf_load_stackoverflow) 1986-06-17

Family

ID=30193380

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6318883U Granted JPS59169369U (ja) 1983-04-27 1983-04-27 液相エピタキシヤル成長装置

Country Status (1)

Country Link
JP (1) JPS59169369U (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS6120042Y2 (enrdf_load_stackoverflow) 1986-06-17

Similar Documents

Publication Publication Date Title
JPS59169369U (ja) 液相エピタキシヤル成長装置
JPS59169368U (ja) 液相エピタキシヤル成長装置
JPS59169367U (ja) 液相エピタキシヤル成長装置
JP2885268B2 (ja) 液相成長方法及び装置
CN223356453U (zh) 一种四氢甲基嘧啶羧酸制备用存储罐
CN214853923U (zh) 一种免疫细胞冷存装置
JPH0367075U (enrdf_load_stackoverflow)
JP2508687Y2 (ja) 熱処理炉
JPS5991378U (ja) 液相エピタキシヤル成長用ボ−ト
JPH03227014A (ja) 液相エピタキシャル成長装置
JPS61202411A (ja) 液相エピタキシヤル成長法
JPH03193697A (ja) 気相エピタキシャル成長装置
JPS6042734U (ja) 液相エピタキシャル成長装置
JPH0416591A (ja) 化合物半導体の単結晶引き上げ装置
JPS59113358U (ja) 単結晶育成装置
JPS59112931U (ja) 液相エピタキシヤル成長装置
JPS6049150U (ja) 真空蒸着装置
JPS61198279U (enrdf_load_stackoverflow)
JPH01106575U (enrdf_load_stackoverflow)
JPH0456766U (enrdf_load_stackoverflow)
JPH01177276U (enrdf_load_stackoverflow)
JPS59189875U (ja) 液体封止結晶引上成長装置
JPS63102770U (enrdf_load_stackoverflow)
JPH0227234A (ja) 液槽式熱衝撃試験装置
JPS60373U (ja) 単結晶引上装置