JPS59169131A - 電子線描画方法および装置 - Google Patents

電子線描画方法および装置

Info

Publication number
JPS59169131A
JPS59169131A JP58042165A JP4216583A JPS59169131A JP S59169131 A JPS59169131 A JP S59169131A JP 58042165 A JP58042165 A JP 58042165A JP 4216583 A JP4216583 A JP 4216583A JP S59169131 A JPS59169131 A JP S59169131A
Authority
JP
Japan
Prior art keywords
rectangular
coil
peculiar
electron beam
deflector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58042165A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0554251B2 (enExample
Inventor
Norio Saito
徳郎 斉藤
Susumu Ozasa
小笹　進
Takashi Matsuzaka
松坂　尚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58042165A priority Critical patent/JPS59169131A/ja
Publication of JPS59169131A publication Critical patent/JPS59169131A/ja
Publication of JPH0554251B2 publication Critical patent/JPH0554251B2/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)
JP58042165A 1983-03-16 1983-03-16 電子線描画方法および装置 Granted JPS59169131A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58042165A JPS59169131A (ja) 1983-03-16 1983-03-16 電子線描画方法および装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58042165A JPS59169131A (ja) 1983-03-16 1983-03-16 電子線描画方法および装置

Publications (2)

Publication Number Publication Date
JPS59169131A true JPS59169131A (ja) 1984-09-25
JPH0554251B2 JPH0554251B2 (enExample) 1993-08-12

Family

ID=12628345

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58042165A Granted JPS59169131A (ja) 1983-03-16 1983-03-16 電子線描画方法および装置

Country Status (1)

Country Link
JP (1) JPS59169131A (enExample)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62206829A (ja) * 1986-03-06 1987-09-11 Nec Corp 荷電粒子線描画装置
JPS62206828A (ja) * 1986-03-06 1987-09-11 Nec Corp 荷電粒子線描画装置
JPS62286274A (ja) * 1986-06-05 1987-12-12 Toshiba Mach Co Ltd 電子ビ−ム露光装置
JPS63114125A (ja) * 1986-10-31 1988-05-19 Toshiba Corp 荷電ビ−ム露光装置
JPS6476656A (en) * 1987-09-16 1989-03-22 Toshiba Corp Charged beam depicting device
JPH02246318A (ja) * 1989-03-20 1990-10-02 Fujitsu Ltd 荷電粒子ビーム露光装置
US5283440A (en) * 1990-10-05 1994-02-01 Hitachi, Ltd. Electron beam writing system used in a cell projection method
US5334845A (en) * 1989-03-24 1994-08-02 Hitachi Limited Charged beam exposure method and apparatus as well as aperture stop and production method thereof
US5334282A (en) * 1990-09-28 1994-08-02 Hitachi, Ltd. Electron beam lithography system and method
US7759660B2 (en) * 2004-04-14 2010-07-20 Micron Technology, Inc. Electron beam lithography system

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5396679A (en) * 1977-02-04 1978-08-24 Hitachi Ltd Electron-beam drawing equipment
JPS548071A (en) * 1977-06-17 1979-01-22 Daishowa Giken Kogyo Method and device for making pouch

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5396679A (en) * 1977-02-04 1978-08-24 Hitachi Ltd Electron-beam drawing equipment
JPS548071A (en) * 1977-06-17 1979-01-22 Daishowa Giken Kogyo Method and device for making pouch

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62206829A (ja) * 1986-03-06 1987-09-11 Nec Corp 荷電粒子線描画装置
JPS62206828A (ja) * 1986-03-06 1987-09-11 Nec Corp 荷電粒子線描画装置
JPS62286274A (ja) * 1986-06-05 1987-12-12 Toshiba Mach Co Ltd 電子ビ−ム露光装置
JPS63114125A (ja) * 1986-10-31 1988-05-19 Toshiba Corp 荷電ビ−ム露光装置
JPS6476656A (en) * 1987-09-16 1989-03-22 Toshiba Corp Charged beam depicting device
JPH02246318A (ja) * 1989-03-20 1990-10-02 Fujitsu Ltd 荷電粒子ビーム露光装置
US5334845A (en) * 1989-03-24 1994-08-02 Hitachi Limited Charged beam exposure method and apparatus as well as aperture stop and production method thereof
US5334282A (en) * 1990-09-28 1994-08-02 Hitachi, Ltd. Electron beam lithography system and method
US5283440A (en) * 1990-10-05 1994-02-01 Hitachi, Ltd. Electron beam writing system used in a cell projection method
US7759660B2 (en) * 2004-04-14 2010-07-20 Micron Technology, Inc. Electron beam lithography system

Also Published As

Publication number Publication date
JPH0554251B2 (enExample) 1993-08-12

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