JPS59167058A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS59167058A JPS59167058A JP4089783A JP4089783A JPS59167058A JP S59167058 A JPS59167058 A JP S59167058A JP 4089783 A JP4089783 A JP 4089783A JP 4089783 A JP4089783 A JP 4089783A JP S59167058 A JPS59167058 A JP S59167058A
- Authority
- JP
- Japan
- Prior art keywords
- film
- wiring
- electrode wiring
- titanium silicide
- titanium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 12
- 229910021341 titanium silicide Inorganic materials 0.000 claims abstract description 21
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 8
- 238000000034 method Methods 0.000 abstract description 6
- 239000000758 substrate Substances 0.000 abstract description 5
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 4
- 239000000377 silicon dioxide Substances 0.000 abstract description 4
- 239000010936 titanium Substances 0.000 abstract description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052719 titanium Inorganic materials 0.000 abstract description 3
- 238000009792 diffusion process Methods 0.000 abstract description 2
- 230000003647 oxidation Effects 0.000 abstract description 2
- 238000007254 oxidation reaction Methods 0.000 abstract description 2
- 229910008479 TiSi2 Inorganic materials 0.000 abstract 2
- DFJQEGUNXWZVAH-UHFFFAOYSA-N bis($l^{2}-silanylidene)titanium Chemical compound [Si]=[Ti]=[Si] DFJQEGUNXWZVAH-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 150000004767 nitrides Chemical class 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 9
- 229910021332 silicide Inorganic materials 0.000 description 9
- 238000002844 melting Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 7
- 230000008018 melting Effects 0.000 description 6
- 238000007740 vapor deposition Methods 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 239000005368 silicate glass Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- GICWIDZXWJGTCI-UHFFFAOYSA-I molybdenum pentachloride Chemical compound Cl[Mo](Cl)(Cl)(Cl)Cl GICWIDZXWJGTCI-UHFFFAOYSA-I 0.000 description 2
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- 229910016006 MoSi Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910004217 TaSi2 Inorganic materials 0.000 description 1
- 229910008814 WSi2 Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- -1 that is Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
【発明の詳細な説明】
（ａ） 発明の技術分野
本発明は半導体装置、特に集積回路（ＩＣ）などの半導
体装置に設けられる電極配線の構造に関する。DETAILED DESCRIPTION OF THE INVENTION (a) Technical Field of the Invention The present invention relates to a semiconductor device, and particularly to the structure of electrode wiring provided in a semiconductor device such as an integrated circuit (IC).
山） 技術の背景
周知のようにＩＣでは表面に多数の素子を接続するため
の電極配線が設けられており、また高密度高集積化され
たＬＳＩでは電極配線が絶縁膜を介して多層に積層され
ている。Background of the Technology As is well known, ICs have electrode wiring on their surface to connect a large number of elements, and in high-density and highly integrated LSIs, electrode wiring is laminated in multiple layers with insulating films interposed between them. has been done.
従来、かような電極配線はアルミニウムあるいはその合
金が多かったが、柔らかいアルミニウムを多層に形成す
ることが難しく、多層構造では多結晶シリコンが電極配
線として用いられるようになってきた。しかし、多結晶
シリコンは高抵抗で電気伝導度が低いため、それに代わ
る電極配線材料が検討され、その結果高融点金属あるい
は高融点金属シリサイドが注目され使用されるようにな
った。Conventionally, such electrode wiring has often been made of aluminum or its alloy, but it is difficult to form multiple layers of soft aluminum, so polycrystalline silicon has come to be used as the electrode wiring in multilayer structures. However, since polycrystalline silicon has high resistance and low electrical conductivity, alternative electrode wiring materials have been investigated, and as a result, high melting point metals or high melting point metal silicides have attracted attention and come to be used.
高融点金属とはモリブデン（Ｍｏ） 、タングステン（
Ｗ）、タンタル（Ｔａ） 、チタン（Ｔｉ）などであり
、高融点金属シリサイドはそのシリサイド即ちＭｏＳｉ
２ 、 ＷＳｉ２ 、 ＴａＳｉ２ 、 ＴｉＳｉ２な
どである。High melting point metals include molybdenum (Mo), tungsten (
W), tantalum (Ta), titanium (Ti), etc., and the high melting point metal silicide is the silicide, that is, MoSi.
2, WSi2, TaSi2, TiSi2, etc.
その内、高融点金属シリサイドは多結晶シリコンに類似
の加工性を有しており、しかも抵抗率が多結晶シリコン
より２桁程度低いために特に重用されつつある。Among them, high-melting point metal silicide has processability similar to that of polycrystalline silicon, and has a resistivity that is about two orders of magnitude lower than that of polycrystalline silicon, so it is becoming particularly important.
（Ｃ１従来技術と問題点
このような高融点金属シリサイドにおいてモリブデンシ
リサイド（ＭｏＳｉ２ ）が最も良く利用されているが
、モリブデンシリサイドをプラズマ気相成長法で被着形
成すると安定した膜質のものが得られない問題がある。(C1 Prior art and problems) Molybdenum silicide (MoSi2) is most commonly used as a high melting point metal silicide, but when molybdenum silicide is deposited by plasma vapor deposition, a stable film quality cannot be obtained. There is no problem.
それはソース（気相源）の五塩化モリブデン（ＭｏＣ１
５）が常温で固体であり、容器を一定温度（約１００℃
）に加熱して送入管も絶えず一定に保温しなければなら
ない難問題に原因があるものと考えられる。It is the molybdenum pentachloride (MoC1) source (gas phase source).
5) is solid at room temperature, and the container is kept at a constant temperature (approximately 100℃).
This is thought to be due to the difficult problem of having to keep the inlet pipe at a constant temperature.
また、プラズマ気相成長法は他の被膜形成法に比べて最
もステップカバレージが良く、凹凸の多い表面に被着す
る電極配線の形成には最も適した被着方法である。Furthermore, the plasma vapor deposition method has the best step coverage compared to other film forming methods, and is the most suitable deposition method for forming electrode wiring on a surface with many irregularities.
従って、ソースが常温で液体の材料からなる高融点金属
シリサイドをプラズマ気相成長法で被着することが望ま
れる。かような高融点金属シリサイドはチタンシリサイ
ド（ＴｉＳｉ２）で、四塩化チタン（ＴｉＣ１４）が常
温で液状である。しかも、チタンシリサイドは多数のシ
リサイド材料のうち、最も電気伝導度が良い。Therefore, it is desirable for the source to deposit high-melting point metal silicide made of a material that is liquid at room temperature by plasma vapor deposition. Such high melting point metal silicide is titanium silicide (TiSi2), and titanium tetrachloride (TiC14) is liquid at room temperature. Furthermore, titanium silicide has the best electrical conductivity among many silicide materials.
しかし一方、チタンシリサイドは化学的に活性で、酸化
しやすい等の欠点がある。However, on the other hand, titanium silicide has drawbacks such as being chemically active and easily oxidized.
＋ｄ） 発明の目的
本発明はこのような問題に解決を与えて、チタンシリサ
イドを電極配線とした構造の半導体装置を提案するもの
である。+d) Purpose of the Invention The present invention provides a solution to such problems and proposes a semiconductor device having a structure in which titanium silicide is used as electrode wiring.
（ｅ） 発明の構成
その目的は、チタンシリサイド層と酸化物層との間に窒
化シリコン膜が介在してなる半導体装置によって達成す
ることができる。(e) Structure of the Invention The object can be achieved by a semiconductor device in which a silicon nitride film is interposed between a titanium silicide layer and an oxide layer.
（ｆｌ 発明の実施例 以下２図面を参照して実施例によって詳細に説明する。(fl Embodiments of the invention Examples will be described in detail below with reference to two drawings.
第１図は本発明にかかる一実施例の断面図を示し、半導
体基板１のＮ型領域２からチタンシリサイド電極配線３
を導出しており、このチタンシリサイド電極配線の下層
と上層とを膜厚１０００人の窒化シリコン（Ｓｔ、Ｎ４
）膜４．５で被覆している。６は二酸化シリコン（Ｓｉ
Ｏ２）ＭＬ７は燐シリケートガラス（Ｐ Ｓ Ｇ）膜で
ある。FIG. 1 shows a cross-sectional view of one embodiment of the present invention, and shows a titanium silicide electrode wiring 3 from an N-type region 2 of a semiconductor substrate 1.
The lower and upper layers of this titanium silicide electrode wiring are made of silicon nitride (St, N4) with a thickness of 1000.
) coated with membrane 4.5. 6 is silicon dioxide (Si
O2) ML7 is a phosphorus silicate glass (PSG) membrane.
このような構造にすると、チタンシリサイドが５ｉ０２
膜やｐｓｃ膜のような酸化膜と直接接触することがない
から、チタンが拡散したりチタンシリサイドが酸化した
りすることが防止され安定である。その形成方法は、下
層の窒化シリコン膜４をプラズマ気相成長法で被着した
後にチタンシリサイド３をプラズマ気相成長法で被着し
てパターンニングする。次いで、上層の窒化シリコン膜
５をプラズマ気相成長法で被着し、更に不必要な部分に
被着した窒化シリコン膜はフォトプロセスによって除去
する。このようにすれば、完全にチタンシリサイドを窒
化シリコン膜で被覆することができる。With this structure, titanium silicide becomes 5i02
Since there is no direct contact with an oxide film such as a film or a PSC film, diffusion of titanium and oxidation of titanium silicide are prevented and stability is maintained. Its formation method is to deposit the lower silicon nitride film 4 by plasma vapor phase epitaxy, then deposit titanium silicide 3 by plasma vapor phase epitaxy and pattern it. Next, an upper silicon nitride film 5 is deposited by plasma vapor deposition, and the silicon nitride film deposited on unnecessary portions is removed by a photo process. In this way, titanium silicide can be completely covered with the silicon nitride film.
次ぎに、第２図は本発明にかかる他の実施例の断面図で
ある。本例は半導体基板１１上にゲート絶縁膜１２を介
して多結晶シリコン膜（ゲート電極）１３が設けられ、
多結晶シリコン膜は導電性が悪いため多結晶シリコン膜
１３に接着してチタンシリサイド１４を形成した構造で
、電極配線は多結晶シリコン１３とチタンシリサイド１
４とから構成されている。この場合は、上層のみ窒化シ
リコン膜１５で被覆すれば十分にチタンシリサイドの変
質が防がれる。尚、１６は二酸化シリコン膜、１７は燐
シリケートガラス膜である。Next, FIG. 2 is a sectional view of another embodiment according to the present invention. In this example, a polycrystalline silicon film (gate electrode) 13 is provided on a semiconductor substrate 11 via a gate insulating film 12,
Since the polycrystalline silicon film has poor conductivity, it has a structure in which titanium silicide 14 is bonded to the polycrystalline silicon film 13, and the electrode wiring is made of polycrystalline silicon 13 and titanium silicide 1.
It is composed of 4. In this case, if only the upper layer is covered with the silicon nitride film 15, deterioration of the titanium silicide can be sufficiently prevented. Note that 16 is a silicon dioxide film and 17 is a phosphorus silicate glass film.
（梢 発明の効果
以上の説明から明らかなように、本発明は高融点金属シ
リサイドの中で最も電気伝導度の良いチタンシリサイド
を安定して電極配線にする構造である。従って、本発明
によればＩＣ，、ＬＳＩなどの半導体装置を高性能化す
ることができる。(Kozue) Effects of the Invention As is clear from the above explanation, the present invention has a structure in which titanium silicide, which has the highest electrical conductivity among refractory metal silicides, is stably used as electrode wiring. For example, it is possible to improve the performance of semiconductor devices such as ICs and LSIs.
第１図および第２図は何れも本発明にかかる実施例の断
面構造図である。
図中、１．１１は半導体基板、２はＮ型領域。
３．１４はチタンシリサイド、４，５．１５は窒化シリ
コン１ｇ、６．１６は二酸化シリコン膜、７゜１７は燐
シリケートガラス膜、１２はゲート絶縁膜１，１３は多
結晶シリコン膜を示している。Both FIG. 1 and FIG. 2 are cross-sectional structural views of an embodiment according to the present invention. In the figure, 1.11 is a semiconductor substrate, and 2 is an N-type region. 3.14 is titanium silicide, 4, 5.15 is 1 g of silicon nitride, 6.16 is a silicon dioxide film, 7°17 is a phosphorus silicate glass film, 12 is a gate insulating film 1, 13 is a polycrystalline silicon film. There is.
Claims (1)
が介在してなることを特徴とする半導体装置。A semiconductor device characterized in that a silicon nitride film is interposed between a titanium silicide layer and an oxide layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4089783A JPS59167058A (en) | 1983-03-11 | 1983-03-11 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4089783A JPS59167058A (en) | 1983-03-11 | 1983-03-11 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59167058A true JPS59167058A (en) | 1984-09-20 |
Family
ID=12593298
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4089783A Pending JPS59167058A (en) | 1983-03-11 | 1983-03-11 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59167058A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6350043A (en) * | 1986-08-19 | 1988-03-02 | Mitsubishi Electric Corp | Inter-layer insulating film for semiconductor device |
| JPS6444044A (en) * | 1987-08-12 | 1989-02-16 | Fujitsu Ltd | Manufacture of semiconductor device |
| US4807015A (en) * | 1984-12-24 | 1989-02-21 | Hitachi, Ltd. | Semiconductor device having electrodes and or interconnections of refractory metal film containing silicon oxide |
| JP2013084829A (en) * | 2011-10-12 | 2013-05-09 | Mitsubishi Electric Corp | Semiconductor device and manufacturing method of the same |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5487175A (en) * | 1977-12-23 | 1979-07-11 | Cho Lsi Gijutsu Kenkyu Kumiai | Method of fabricating semiconductor |
-
1983
- 1983-03-11 JP JP4089783A patent/JPS59167058A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5487175A (en) * | 1977-12-23 | 1979-07-11 | Cho Lsi Gijutsu Kenkyu Kumiai | Method of fabricating semiconductor |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4807015A (en) * | 1984-12-24 | 1989-02-21 | Hitachi, Ltd. | Semiconductor device having electrodes and or interconnections of refractory metal film containing silicon oxide |
| JPS6350043A (en) * | 1986-08-19 | 1988-03-02 | Mitsubishi Electric Corp | Inter-layer insulating film for semiconductor device |
| JPS6444044A (en) * | 1987-08-12 | 1989-02-16 | Fujitsu Ltd | Manufacture of semiconductor device |
| JP2013084829A (en) * | 2011-10-12 | 2013-05-09 | Mitsubishi Electric Corp | Semiconductor device and manufacturing method of the same |
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