JPH0461169A - Semiconductor device and manufacture thereof - Google Patents
Semiconductor device and manufacture thereofInfo
- Publication number
- JPH0461169A JPH0461169A JP16461790A JP16461790A JPH0461169A JP H0461169 A JPH0461169 A JP H0461169A JP 16461790 A JP16461790 A JP 16461790A JP 16461790 A JP16461790 A JP 16461790A JP H0461169 A JPH0461169 A JP H0461169A
- Authority
- JP
- Japan
- Prior art keywords
- melting point
- high melting
- silicide film
- film
- tungsten
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 12
- 238000004519 manufacturing process Methods 0.000 title description 11
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 55
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 55
- 239000000203 mixture Substances 0.000 claims abstract description 52
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 41
- 229910052751 metal Inorganic materials 0.000 claims abstract description 38
- 239000002184 metal Substances 0.000 claims abstract description 38
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 22
- 239000010703 silicon Substances 0.000 claims abstract description 22
- 238000002844 melting Methods 0.000 claims description 84
- 230000008018 melting Effects 0.000 claims description 74
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 abstract description 17
- 229910021342 tungsten silicide Inorganic materials 0.000 abstract description 17
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract description 10
- 229910052721 tungsten Inorganic materials 0.000 abstract description 10
- 239000010937 tungsten Substances 0.000 abstract description 10
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 5
- 229910000077 silane Inorganic materials 0.000 abstract description 5
- 239000000758 substrate Substances 0.000 abstract description 5
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 abstract description 5
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 4
- 238000000034 method Methods 0.000 description 16
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000003870 refractory metal Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 235000013305 food Nutrition 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、多結晶シリコン層上に高融点シリサイド膜
か形成された半導体装置及びその製造方法に関するもの
である。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device in which a high melting point silicide film is formed on a polycrystalline silicon layer, and a method for manufacturing the same.
多結晶シリコンは、従来よりゲート材料として長く用い
られてきた材料であるが、一般的に金属と比較して比抵
抗が高く、デバイスの微細化に伴い信号伝達遅延の原因
の一つとなりはじめた。そのため、新たなゲート材料と
して、モリブデン。Polycrystalline silicon has long been used as a gate material, but it generally has a higher resistivity than metals, and as devices become smaller, it begins to become one of the causes of signal transmission delays. . Therefore, molybdenum is used as a new gate material.
タングステン、タンタル、チタン等の高融点金属とシリ
コンとの合金膜、いわゆる高融点シリサイド膜が用いら
れようとしている。高融点シリサイド膜の長所は以Ｆの
とおりである。An alloy film of silicon and a high melting point metal such as tungsten, tantalum, or titanium, or a so-called high melting point silicide film, is being used. The advantages of the high melting point silicide film are as follows.
■ 多結晶シリコンと比較（７て比抵抗かおおむね１−
けた小さい。■ Comparison with polycrystalline silicon (resistivity of 7 is approximately 1-
An order of magnitude smaller.
■ 化学的性質が多結晶シリコンに酷似しており、プロ
セス上、はぼ多結晶シリコンと同様に取り扱うことがで
きる。■ Its chemical properties are very similar to polycrystalline silicon, and it can be handled in the same way as polycrystalline silicon in the process.
ただし、高融点シリサイド膜をＭＯＳトランジスタのゲ
ート電極の材料とし“ご用いる場合、ＭＯＳトランジス
タのしきい値特性を従来の多結晶シリコンゲートの場合
と同一にするため、及びＭＯＳトランジスタの安定性を
損なわないために、現在では高融点シリサイド膜の下部
に多結晶シリコン膜を敷いたいわゆるポリサイド膜が広
く用いられている。However, when using a high-melting-point silicide film as a material for the gate electrode of a MOS transistor, it is necessary to make the threshold characteristics of the MOS transistor the same as that of a conventional polycrystalline silicon gate, and to impair the stability of the MOS transistor. Therefore, a so-called polycide film, in which a polycrystalline silicon film is laid under a high melting point silicide film, is currently widely used.
第２図はポリサイド膜を用いた従来のＭＯＳ）ランジス
タのゲート電極構造を示す断面図である。FIG. 2 is a sectional view showing the gate electrode structure of a conventional MOS transistor using a polycide film.
図において、１はシリコン基板、２はシリコン基板１上
に形成されたゲート酸化膜、３はゲート酸化膜２上に形
成された多結晶シリコン膜、６は多結晶シリコン膜３上
に形成された高融点シリサイド膜を示す。In the figure, 1 is a silicon substrate, 2 is a gate oxide film formed on the silicon substrate 1, 3 is a polycrystalline silicon film formed on the gate oxide film 2, and 6 is a polycrystalline silicon film formed on the polycrystalline silicon film 3. Shows a high melting point silicide film.
第３Ａ図〜第３Ｄ図はポリサイド膜を用いたＭＯＳトラ
ンジスタのゲート・電極の従来の製造方法を示す断面上
程図である。FIGS. 3A to 3D are cross-sectional views showing a conventional method for manufacturing gates and electrodes of a MOS transistor using a polycide film.
第１３Ａ図に示すように、シリコン基板１十に熱酸化法
によりゲート酸化膜２を形成ｊる。As shown in FIG. 13A, a gate oxide film 2 is formed on a silicon substrate 10 by thermal oxidation.
次に、第３Ｂ図に示すように、ゲート酸化膜′、２上に
化学的気相成長法（以下ＣＶ ｉ）法と略Ｊ）により、
多結晶シリコン膜３を形成づ”る。Next, as shown in FIG. 3B, a chemical vapor deposition method (hereinafter referred to as CV i) is applied on the gate oxide film ′, 2.
A polycrystalline silicon film 3 is formed.
次に、第３ Ｃ図に示すように、高融点シリサイド膜６
を形成する前の前処理と１、“Ｃ１多結晶ンリコン膜３
上に形成された自然酸化膜７を例えばＡｒイオン８を用
いたスパッタエッチ法により除去する。Next, as shown in FIG. 3C, a high melting point silicide film 6 is formed.
Pretreatment before forming 1.C1 polycrystalline silicon film 3
The native oxide film 7 formed thereon is removed by sputter etching using Ar ions 8, for example.
次に、第３Ｄ図に示すように、スパッタ法により多結晶
シリコン膜３上に高融点シリサイド膜６を形成する。そ
して高融点シリサイド膜６及び多結晶シリコン膜３の一
部を除去すると、第２図に示すようなＭＯＳ）ランジス
タのゲー ト電極が形成される。Next, as shown in FIG. 3D, a high melting point silicide film 6 is formed on the polycrystalline silicon film 3 by sputtering. Then, by removing a portion of the high melting point silicide film 6 and the polycrystalline silicon film 3, a gate electrode of a MOS transistor as shown in FIG. 2 is formed.
従来のＭＯＳトランジスタのゲート電極は上記のような
工程を経て製造され、高融点シリサイド膜６を形成する
のにスノク・ツタ法を用（１て０るので、高融点シリサ
イド膜６を構成する高融点金属とシリコンとの組成比が
均一である。The gate electrode of a conventional MOS transistor is manufactured through the steps described above, and the Snoku-Tsuta method is used to form the high melting point silicide film 6. The composition ratio of melting point metal and silicon is uniform.
ところで、高融点シリサイド膜６を構成しＣＬＮる高融
点金属とシリコンのうち、高融点金属の組成比が化学量
論的組成より高すぎると高融点シリサイド膜６と下部の
多結晶シリコン膜３との反紀；が進行し、ゲート電極全
体の機械的ストレスカ虫増大してＭＯＳトランジスタの
特性を劣化させる。By the way, if the composition ratio of the high melting point metal of the high melting point metal and silicon that constitute the high melting point silicide film 6 and the CLN is too high than the stoichiometric composition, the high melting point silicide film 6 and the lower polycrystalline silicon film 3 will be separated. As this process progresses, the mechanical stress on the entire gate electrode increases, degrading the characteristics of the MOS transistor.
一方、高融点金属の組成比が低すぎると連番こ高融点シ
リサイド膜６と多結晶シリコン膜３との反紀、が乏しく
なり高融点シリサイド膜６と多結晶シリコン膜３の界面
で膜剥がれが生じる等の問題力（生じる。前述のように
、高融点シリサイド膜６中の高融点金属とシリコンとの
組成比が均一であるため、半導体装置を製造中に何らか
の要因で高融点金属とシリコンの組成比に変動が生じ、
高融点金属の組成比か化学量論的組成より高くなりすぎ
たり、低くなりずぎたりすると簡η１・に上述のような
問題が４１でしまう。つまり、プロセス的余裕、言い換
えれば食製品の製造のためのマージンか少ないという問
題点があった。On the other hand, if the composition ratio of the high melting point metal is too low, the relationship between the high melting point silicide film 6 and the polycrystalline silicon film 3 will be insufficient, and the film will peel off at the interface between the high melting point silicide film 6 and the polycrystalline silicon film 3. Problems such as the occurrence of problems such as the occurrence of problems such as the occurrence of Fluctuations occur in the composition ratio of
If the composition ratio of the high melting point metal becomes too high or too low compared to the stoichiometric composition, the above-mentioned problems will easily occur. In other words, there was a problem in that the process margin, or in other words, the margin for manufacturing food products was small.
この発明は上記のような問題点を解消するためになされ
たもので、多結晶シリコン層と高融点シリサイド膜との
密着性にすくれ、機械的ストレスが４（二に＜＜、プロ
セス的な余裕の高い半導体装置及びその製造り法を得る
ことを目的とする。This invention was made in order to solve the above-mentioned problems.The adhesiveness between the polycrystalline silicon layer and the high melting point silicide film is poor, and the mechanical stress is 4 (secondary). An object of the present invention is to obtain a semiconductor device with high margin and a method for manufacturing the same.
〔課題を解決するだめの手段〕
この発明に係る半導体装置は、多結晶シリ−１ン層と、
前記多結晶シリコン層上に形成され、高融点金属とシリ
コンから成り、高融点金属の組成比が化学量論的組成よ
りも高い第１の高融点シリサイド膜と、前記第１の高融
点シリサイド膜上に形成され、前記第１の高融点シリサ
イド膜を構成している高融点金属と同種の高融点金属と
シリコンから成り、高融点金属の組成比が化学量論的組
成と同一あるいは化学量論的組成よりも低い第２の高融
点シリサイド膜と４備えている。[Means for solving the problem] A semiconductor device according to the present invention includes a polycrystalline silicon layer,
a first high melting point silicide film formed on the polycrystalline silicon layer, consisting of a high melting point metal and silicon, and having a composition ratio of the high melting point metal higher than the stoichiometric composition; and the first high melting point silicide film. The film is formed on the first high melting point silicide film and is made of silicon and a high melting point metal of the same type as the high melting point metal forming the first high melting point silicide film, and the composition ratio of the high melting point metal is the same as the stoichiometric composition or is stoichiometric. and a second high melting point silicide film having a lower composition than the standard composition.
この発明に係る半導体装置の製造ｊＪ法は、多結晶シリ
コン屓を準備する−１．程と、高融点金属とジノコンか
ら成り、高融点金属の組成比か化学量論的組成よりも高
い第１−の高融点シリザイド膜苓前記多結晶シリコン層
」に形成する１程と、前記第１の高融点シリサイド膜を
構成Ｉ７ている高融点金属と同種の高融点金属とシリ；
１ンから成り、高融点金属の組成比が化学量論的組成と
同〜あるいは化学量論的組成よりも低い第２の高融点シ
リサイド膜を前記第１の高融点シリサイド膜上に形成す
る１、程とを備えている。The JJ method for manufacturing a semiconductor device according to the present invention includes preparing a polycrystalline silicon layer-1. and a first high-melting point silicide film formed on the polycrystalline silicon layer, which is made of a high-melting point metal and a silicide and whose composition ratio of the high-melting point metal is higher than the stoichiometric composition; A high melting point metal of the same type as the high melting point metal I7 constituting the high melting point silicide film of No. 1 and silica;
forming a second high melting point silicide film on the first high melting point silicide film, the second high melting point silicide film having a composition ratio of a high melting point metal of 1 to 1, which is the same as or lower than the stoichiometric composition; , and has a degree.
この発明における第１の高融点シリサイド膜は、多結晶
シリコン層Ｊに形成され、高融点金属とシリコンから成
り、高融点金属の組成比が化学ＩＩ論的組成よりも高い
。第２の高融点シリサイド膜は、第１の高融点シリサイ
ド膜十に形成され、第１の高融点シリサイド膜を構成（
、ている高融点金属と同種の高融点金属とシリコンから
成り、高融点金属の組成比か化学量論的組成と同一・あ
るいは化学量論的組成よりもれい。そのため、多結晶シ
リコン層は、第１の高融点シリサイド膜とは反応Ｉ２、
第２の高融点シリ１ノイド膜Ｊは反応（ない。The first high melting point silicide film in this invention is formed on the polycrystalline silicon layer J, and is made of a high melting point metal and silicon, and the composition ratio of the high melting point metal is higher than the chemical composition. The second high melting point silicide film is formed on the first high melting point silicide film and constitutes the first high melting point silicide film (
It consists of the same type of refractory metal and silicon as the refractory metal, and the composition ratio of the refractory metal is the same as or greater than the stoichiometric composition. Therefore, the polycrystalline silicon layer reacts with the first high melting point silicide film by I2.
The second high-melting point silinoid film J does not react.
第１八図ないし、第１ Ｃ図はこの発明に係る！ｆ導体
装置の製造方法の一実施例を示す断面工程図である。Figures 18 to 1C relate to this invention! FIG. 3 is a cross-sectional process diagram showing an example of a method for manufacturing an f-conductor device.
第１Ａ図に小すように、従来の製造方法と同様にシリニ
ｌン基板１上にゲート酸化膜２．多結晶シリコン膜３を
形成する。多結晶シリコン膜３十の自然酸化膜は、スパ
ッタ−ツチ等により除去し、てお く 。As shown in FIG. 1A, a gate oxide film 2 is formed on a silicon substrate 1 as in the conventional manufacturing method. A polycrystalline silicon film 3 is formed. The natural oxide film of the polycrystalline silicon film 30 is removed by sputtering or the like and set aside.
次に、第１Ｂ図に示すように、Ｃ，Ｖ Ｄ法を用い、タ
ングステンシリサイド膜のソー・スガスである六フッ化
タングステンガスとシランガスとの流量比を調整するこ
とにより、高融点金属たるタングステンとシリコンのう
ち、タングステンの組成比が化学量論的組成よりも高い
タングステンシリサイド膜４を形成する。このとき、タ
ングステンシリサイド膜４の厚さを従来の高融点シリサ
イド膜６（第一３１１）図参照）よりも薄くする必要か
ある。そう（、なｉｊれば従来と同様、機械的ストレス
が生（、゛るからである。Next, as shown in Figure 1B, by adjusting the flow rate ratio of tungsten hexafluoride gas, which is the source gas for the tungsten silicide film, and silane gas, using the C, V D method, tungsten, which is a high melting point metal, is A tungsten silicide film 4 is formed in which the composition ratio of tungsten among silicon and silicon is higher than the stoichiometric composition. At this time, it is necessary to make the thickness of the tungsten silicide film 4 thinner than the conventional high melting point silicide film 6 (see figure 1 311). Yes, this is because, as in the past, mechanical stress will be generated.
次に、ＣＶＤ法を用い、六フッ化タングステンガスとシ
ランガスとの流量比を調整することにより、タングステ
ンとシリコンのうち、タングステンの組成比が化学量論
的組成と同一あるいはそれよりも低いタングステンシリ
サイド膜５を第１ｃ図に示すようにタングステンシリサ
イド膜４上に形成する。その後、従来と同様、タングス
テンシリサイド膜４．５及び多結晶シリ：Ｊン膜３の一
部を除去し、ゲート電極を形成する。Next, by adjusting the flow rate ratio of tungsten hexafluoride gas and silane gas using the CVD method, tungsten silicide with a tungsten composition ratio of tungsten and silicon that is the same as or lower than the stoichiometric composition is produced. A film 5 is formed on the tungsten silicide film 4 as shown in FIG. 1c. Thereafter, as in the conventional method, a portion of the tungsten silicide film 4.5 and the polycrystalline silicon film 3 are removed to form a gate electrode.
多結晶シリコン膜３と接するタングステンシリサイド膜
４中のタングステンの組成比は化学量論的組成よりも高
いので、多結晶シリコン膜３とタングステンシリサイド
膜４とが反応し、密着性が保たれる。一方、その上部に
形成されたタングステンシリサイド膜５中のタングステ
ンの組成比は化学量論的組成と同一あるいはそれよりも
低いのて、多結晶シリごボン膜′うとタングステンシリ
サイド膜５とは反応し、ない。このようなタングステン
シリサイド膜４，５の２層構造は、六フッ化タングステ
ンガスとシランガスとの流量比を調整することにより容
易に実現可能である。その結果、密着性にすぐれかつ機
械的ストレスか生じないゲート電極を有する半導体装置
を容易に得ることができるとともに、その製造の際のプ
ロセス的な余裕も高いものとなる。Since the composition ratio of tungsten in the tungsten silicide film 4 in contact with the polycrystalline silicon film 3 is higher than the stoichiometric composition, the polycrystalline silicon film 3 and the tungsten silicide film 4 react to maintain adhesion. On the other hand, since the composition ratio of tungsten in the tungsten silicide film 5 formed thereon is the same as or lower than the stoichiometric composition, the polycrystalline silicon film does not react with the tungsten silicide film 5. ,do not have. Such a two-layer structure of the tungsten silicide films 4 and 5 can be easily realized by adjusting the flow rate ratio of tungsten hexafluoride gas and silane gas. As a result, a semiconductor device having a gate electrode with excellent adhesion and no mechanical stress can be easily obtained, and there is also a high degree of margin in the manufacturing process.
なお、上記実施例ではタングステンシリサイド膜を形成
する場合について示したが、モリブデンシリサイド膜、
タンタルシリサイド膜、チタンシリサイド膜等の他の高
融点シリサイド膜を用いても同様の効果を奏する。In addition, although the above example shows the case where a tungsten silicide film is formed, a molybdenum silicide film, a molybdenum silicide film,
Similar effects can be obtained by using other high melting point silicide films such as tantalum silicide film and titanium silicide film.
以上のようにこの発明によれば、多結晶シリコン層上に
形成され、高融点金属とシリコンから成り、高融点金属
の組成比が化学量論的組成よりも高い第１の高融点シリ
サイド膜と、第１．の高融点シリサイド膜上に形成され
、第１の高融点シリサイド膜を構成している高融点金属
と同種の高融点金属とシリコンから成り、高融点金属の
組成比か化学量論的組成と同一あるいは化学量論的組成
よりも低い第２の高融点シリサイド膜とを設けたので、
多結晶シリコン層は、第１の高融点シリサイド膜とは反
応し、第２の高融点シリサイド膜とは反応しない。その
結果、多結晶シリコン層と高融点シリサイド膜との密着
性に優れかつ機械的ストレスが生じに＜＜、プロセス的
な余裕の高い半導体装置を容易に得ることができるとい
う効果がある。As described above, according to the present invention, the first high melting point silicide film is formed on a polycrystalline silicon layer, is made of a high melting point metal and silicon, and has a composition ratio of the high melting point metal higher than the stoichiometric composition. , 1st. It is formed on the high melting point silicide film of the first high melting point silicide film, and is made of the same kind of high melting point metal and silicon as the high melting point metal constituting the first high melting point silicide film, and the composition ratio or stoichiometric composition of the high melting point metal is the same as that of the high melting point metal. Alternatively, by providing a second high melting point silicide film with a lower stoichiometric composition,
The polycrystalline silicon layer reacts with the first high melting point silicide film and does not react with the second high melting point silicide film. As a result, it is possible to easily obtain a semiconductor device that has excellent adhesion between the polycrystalline silicon layer and the high melting point silicide film, is free from mechanical stress, and has a high process margin.
第１八図ないし第１Ｃ図はこの発明に係る半導体装置の
製造方法の一実施例を示す断面工程図、１１２図は従来
の半導体装置を示す断面図、第３八図ないし第３Ｄ図は
従来の半導体装置の製造方法を示す断面工程図である。
図において、３は多結晶シリコン膜、４及び５はタング
ステンシリサイド膜である。
なお、各図中同一符号は同一または相当部分を示す。
第１Ａ図
ｍｉｓ図
４−タンフ叉テンシリサイド＊18 to 1C are cross-sectional process diagrams showing one embodiment of the method for manufacturing a semiconductor device according to the present invention, FIG. 112 is a cross-sectional view showing a conventional semiconductor device, and FIGS. 38 to 3D are conventional FIG. 3 is a cross-sectional process diagram showing a method for manufacturing a semiconductor device. In the figure, 3 is a polycrystalline silicon film, and 4 and 5 are tungsten silicide films. Note that the same reference numerals in each figure indicate the same or corresponding parts. Figure 1A misFigure 4 - Tanf fork tensilicide*
Claims (2)
コンから成り、高融点金属の組成比が化学量論的組成よ
りも高い第１の高融点シリサイド膜と、 前記第１の高融点シリサイド膜上に形成され、前記第１
の高融点シリサイド膜を構成している高融点金属と同種
の高融点金属とシリコンから成り、高融点金属の組成比
が化学量論的組成と同一あるいは化学量論的組成よりも
低い第２の高融点シリサイド膜とを備えた半導体装置。(1) a polycrystalline silicon layer; a first high-melting point silicide film formed on the polycrystalline silicon layer, made of a high-melting point metal and silicon, and having a composition ratio of the high-melting point metal higher than the stoichiometric composition; , formed on the first high melting point silicide film, and formed on the first high melting point silicide film.
A second film is made of a high melting point metal of the same kind as the high melting point metal constituting the high melting point silicide film and silicon, and the composition ratio of the high melting point metal is the same as the stoichiometric composition or lower than the stoichiometric composition. A semiconductor device comprising a high melting point silicide film.
とシリコンから成り、高融点金属の組成比が化学量論的
組成よりも高い第１の高融点シリサイド膜を前記多結晶
シリコン層上に形成する工程と、 前記第１の高融点シリサイド膜を構成している高融点金
属と同種の高融点金属とシリコンから成り、高融点金属
の組成比が化学量論的組成と同一あるいは化学量論的組
成よりも低い第２の高融点シリサイド膜を前記第１の高
融点シリサイド膜上に形成する工程とを備えた半導体装
置の製造方法。(2) A step of preparing a polycrystalline silicon layer, and applying a first high-melting point silicide film consisting of a high-melting point metal and silicon, in which the composition ratio of the high-melting point metal is higher than the stoichiometric composition, on the polycrystalline silicon layer. The first high melting point silicide film is made of a high melting point metal of the same kind as the high melting point metal and silicon, and the composition ratio of the high melting point metal is the same as the stoichiometric composition or the stoichiometric amount is forming a second high melting point silicide film having a lower theoretical composition on the first high melting point silicide film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16461790A JPH0461169A (en) | 1990-06-22 | 1990-06-22 | Semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16461790A JPH0461169A (en) | 1990-06-22 | 1990-06-22 | Semiconductor device and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0461169A true JPH0461169A (en) | 1992-02-27 |
Family
ID=15796602
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16461790A Pending JPH0461169A (en) | 1990-06-22 | 1990-06-22 | Semiconductor device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0461169A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1197389A (en) * | 1997-09-11 | 1999-04-09 | Lg Semicon Co Ltd | Fabrication of semiconductor device |
| JPH11200050A (en) * | 1998-01-14 | 1999-07-27 | Mitsubishi Electric Corp | Formation of tungsten silicide film, production of semiconductor device and semiconductor wafer treating device |
-
1990
- 1990-06-22 JP JP16461790A patent/JPH0461169A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1197389A (en) * | 1997-09-11 | 1999-04-09 | Lg Semicon Co Ltd | Fabrication of semiconductor device |
| JPH11200050A (en) * | 1998-01-14 | 1999-07-27 | Mitsubishi Electric Corp | Formation of tungsten silicide film, production of semiconductor device and semiconductor wafer treating device |
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