JPS59155982A - 半導体レ−ザ素子及びその製造方法 - Google Patents

半導体レ−ザ素子及びその製造方法

Info

Publication number
JPS59155982A
JPS59155982A JP3042083A JP3042083A JPS59155982A JP S59155982 A JPS59155982 A JP S59155982A JP 3042083 A JP3042083 A JP 3042083A JP 3042083 A JP3042083 A JP 3042083A JP S59155982 A JPS59155982 A JP S59155982A
Authority
JP
Japan
Prior art keywords
layer
grooves
current
semiconductor laser
stripe
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3042083A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6353716B2 (enExample
Inventor
Kaneki Matsui
完益 松井
Haruhisa Takiguchi
滝口　治久
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP3042083A priority Critical patent/JPS59155982A/ja
Publication of JPS59155982A publication Critical patent/JPS59155982A/ja
Publication of JPS6353716B2 publication Critical patent/JPS6353716B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP3042083A 1983-02-24 1983-02-24 半導体レ−ザ素子及びその製造方法 Granted JPS59155982A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3042083A JPS59155982A (ja) 1983-02-24 1983-02-24 半導体レ−ザ素子及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3042083A JPS59155982A (ja) 1983-02-24 1983-02-24 半導体レ−ザ素子及びその製造方法

Publications (2)

Publication Number Publication Date
JPS59155982A true JPS59155982A (ja) 1984-09-05
JPS6353716B2 JPS6353716B2 (enExample) 1988-10-25

Family

ID=12303454

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3042083A Granted JPS59155982A (ja) 1983-02-24 1983-02-24 半導体レ−ザ素子及びその製造方法

Country Status (1)

Country Link
JP (1) JPS59155982A (enExample)

Also Published As

Publication number Publication date
JPS6353716B2 (enExample) 1988-10-25

Similar Documents

Publication Publication Date Title
JPH0279486A (ja) 半導体レーザ素子
JPS6085585A (ja) 埋め込み型半導体レ−ザ
US4686679A (en) Window VSIS semiconductor laser
JPH0671121B2 (ja) 半導体レーザ装置
JPH01186688A (ja) 半導体レーザ装置
JPS6362292A (ja) 半導体レ−ザ装置およびその製造方法
JPS6353716B2 (enExample)
JPS60167488A (ja) 半導体レ−ザ装置
JP2518221B2 (ja) 半導体レ−ザ素子
JPH01132191A (ja) 半導体レーザ素子
JPS5834988A (ja) 半導体レ−ザの製造方法
JP4024319B2 (ja) 半導体発光装置
JPS6390879A (ja) 半導体レ−ザの製造方法
JPS6377186A (ja) 半導体レ−ザの製造方法
JPH01166592A (ja) 半導体レーザ素子
JPH05875B2 (enExample)
JP3081363B2 (ja) 赤色半導体レーザ
JP3038186B2 (ja) 半導体レーザ素子の製造方法
JPS6255986A (ja) 半導体レ−ザ装置
JPS6342867B2 (enExample)
JPS61220392A (ja) 半導体発光素子
JPS60123082A (ja) 半導体レ−ザ素子
JPH0353580A (ja) 半導体レーザ素子
JPS60119787A (ja) 半導体レ−ザ素子及びその製造方法
JPS5967680A (ja) 光双安定素子