JPS59155927A - パタ−ン形成方法 - Google Patents

パタ−ン形成方法

Info

Publication number
JPS59155927A
JPS59155927A JP58031118A JP3111883A JPS59155927A JP S59155927 A JPS59155927 A JP S59155927A JP 58031118 A JP58031118 A JP 58031118A JP 3111883 A JP3111883 A JP 3111883A JP S59155927 A JPS59155927 A JP S59155927A
Authority
JP
Japan
Prior art keywords
resist
pattern
film
radiation
resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58031118A
Other languages
English (en)
Japanese (ja)
Other versions
JPH05848B2 (enExample
Inventor
Masaru Sasago
勝 笹子
Kazuhiko Tsuji
和彦 辻
Koichi Kugimiya
公一 釘宮
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP58031118A priority Critical patent/JPS59155927A/ja
Publication of JPS59155927A publication Critical patent/JPS59155927A/ja
Publication of JPH05848B2 publication Critical patent/JPH05848B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP58031118A 1983-02-25 1983-02-25 パタ−ン形成方法 Granted JPS59155927A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58031118A JPS59155927A (ja) 1983-02-25 1983-02-25 パタ−ン形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58031118A JPS59155927A (ja) 1983-02-25 1983-02-25 パタ−ン形成方法

Publications (2)

Publication Number Publication Date
JPS59155927A true JPS59155927A (ja) 1984-09-05
JPH05848B2 JPH05848B2 (enExample) 1993-01-06

Family

ID=12322486

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58031118A Granted JPS59155927A (ja) 1983-02-25 1983-02-25 パタ−ン形成方法

Country Status (1)

Country Link
JP (1) JPS59155927A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4738910A (en) * 1985-06-12 1988-04-19 Hitachi, Ltd. Method of applying a resist

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4738910A (en) * 1985-06-12 1988-04-19 Hitachi, Ltd. Method of applying a resist

Also Published As

Publication number Publication date
JPH05848B2 (enExample) 1993-01-06

Similar Documents

Publication Publication Date Title
US5989788A (en) Method for forming resist patterns having two photoresist layers and an intermediate layer
US4315984A (en) Method of producing a semiconductor device
KR100675782B1 (ko) 비 흡수 레티클 및 이를 제조하는 방법
JP3373147B2 (ja) フォトレジスト膜及びそのパターン形成方法
JPH0210362A (ja) 微細パターン形成方法
JP2002202585A5 (enExample)
JPS59155927A (ja) パタ−ン形成方法
JPH035653B2 (enExample)
JPH05234965A (ja) コンタクトホールの形成方法
JP2560773B2 (ja) パターン形成方法
JPS59155926A (ja) パタ−ン形成方法
US6156480A (en) Low defect thin resist processing for deep submicron lithography
JP2555675B2 (ja) パターン形成方法
JPH02156244A (ja) パターン形成方法
JPS5984427A (ja) パタ−ン形成方法
JP3421268B2 (ja) パターン形成法
JPH02140914A (ja) 半導体装置の製造方法
JP3221418B2 (ja) パターン形成方法
JPH035654B2 (enExample)
JPS58153932A (ja) 写真蝕刻方法
JPH06140297A (ja) レジスト塗布方法
JPH06326018A (ja) パターン形式用レジスト構造とパターン形成方法
JPH05299337A (ja) 多層レジスト膜形成方法
JPH0425695B2 (enExample)
JP2666420B2 (ja) 半導体装置の製造方法