JPS59155178A - Semiconductor device with schottky barrier diode - Google Patents
Semiconductor device with schottky barrier diodeInfo
- Publication number
- JPS59155178A JPS59155178A JP555784A JP555784A JPS59155178A JP S59155178 A JPS59155178 A JP S59155178A JP 555784 A JP555784 A JP 555784A JP 555784 A JP555784 A JP 555784A JP S59155178 A JPS59155178 A JP S59155178A
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- schottky barrier
- barrier metal
- peripheral interface
- barrier diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000004888 barrier function Effects 0.000 title claims abstract description 30
- 239000004065 semiconductor Substances 0.000 title claims abstract description 13
- 229910052751 metal Inorganic materials 0.000 claims abstract description 14
- 239000002184 metal Substances 0.000 claims abstract description 14
- 230000002093 peripheral effect Effects 0.000 claims abstract description 9
- 230000003647 oxidation Effects 0.000 claims abstract description 7
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 12
- 229910052710 silicon Inorganic materials 0.000 abstract description 12
- 239000010703 silicon Substances 0.000 abstract description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 10
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 10
- 210000003323 beak Anatomy 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 1
- 241000293849 Cordylanthus Species 0.000 description 5
- 239000002253 acid Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、シ言ットキバリアダイオ・−ドを有するバイ
ポーラＩＣ１ＭＴＳＴＣなどの半導体装置に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor device such as a bipolar IC1MTSTC having a static barrier diode.
従来、ショットキバリアダイオードは、半導体とバリア
メタルとの接触によって生ずる電位障壁を利用したもの
であるため、バリア周辺部をガードリング構造−ＩＰＭ
Ｏ８構造として、その周辺部における電界集中をやわら
げたり、結晶の不完全性を改善して、逆方向電圧−電流
特性等の性能向上を行なっているのが一般的である。Conventionally, Schottky barrier diodes utilize a potential barrier created by contact between a semiconductor and a barrier metal, so the area around the barrier is constructed with a guard ring structure - IPM.
Generally, the O8 structure is used to reduce the concentration of electric field in the periphery of the O8 structure, improve crystal imperfections, and improve performance such as reverse voltage-current characteristics.
しかしながら、バイポーラＩＣやＭＩＳＩＣ等に組み込
んだショットキバリアダイオードにおいては、ガードリ
ング構造やＭＯ８構造をとることにより、それらを形成
するためのマスク合わせ余裕等が必要となり、Ｘ子面積
が大となり、ＩＣの集積度を向上させるための大きな制
約となっている。However, in Schottky barrier diodes built into bipolar ICs, MISICs, etc., the guard ring structure and MO8 structure require mask alignment margins to form them, resulting in a large X-element area and This is a major constraint for improving the degree of integration.
そこで１本発明者は、ガードリング構造やＭＯ８構造を
採用することなく所期の特性が得られ、素子面積が可及
的小なるショットキバリアダイオードを組み込んだバイ
ポーラＩＣ等の半導体装置を検討した。Therefore, the present inventor investigated a semiconductor device such as a bipolar IC incorporating a Schottky barrier diode, which can obtain desired characteristics without employing a guard ring structure or an MO8 structure and has a device area as small as possible.
このような目的を達成するために１本発明は。One aspect of the present invention is to achieve this purpose.
半導体鎖酸とバリアメタルとの周辺界面の少な（とも一
部領域に１選択熱酸化処理をもって形成されたフィール
ド酸１ヒ膜が介在してなるショットキバリアダイオード
を有する半導体装置を検討した。A semiconductor device having a Schottky barrier diode with a small peripheral interface between a semiconductor chain acid and a barrier metal (in which a field acid film formed by selective thermal oxidation treatment is interposed in some regions) was studied.
以下１本発明者が検討したショットキバリアダイオード
を有するＩＣを図面を参照しながら具体的に詳述するう
第１図は１本発明者が検討したＩＣにおけるショットキ
バリアダイオードを示す断面図である。An IC having a Schottky barrier diode studied by the present inventor will be described in detail below with reference to the drawings. FIG. 1 is a sectional view showing a Schottky barrier diode in an IC studied by the present inventor.
同図において、１ｆｌＮ型シリコン領域でバイポーラＩ
ＣにおけるＮ型エピタキシャル層、ＭＯ８ＩＣにおける
Ｎ型シリコン基板等で、ショットキバリアダイオードに
おける半導体領域である。、２に、フィールド酸化シリ
コン膜で、ナイトライド膜を酸化抑止膜とした選択熱酸
化処理により形成したもので、ＬＯＣＯ８構造またはア
イソプレーナ構造のもので、バイポーラＩＣにおいてに
、アイソレーション領域にも使用年れるものである。こ
の酸化シリコン膜２の形状は、図示するように、ナイト
ライド膜下の周辺においてバードビークが形成されてい
るものである。、３１ｄ、バリアメタルであり、ＩＣの
配線金属として使用されるアルミニウムあるいは白金、
タングステン、クロム、モリブデン等を下地膜とし、そ
の上に電極用導電体膜を重層したものである。In the same figure, bipolar I in the 1flN type silicon region
It is an N-type epitaxial layer in C, an N-type silicon substrate in MO8IC, etc., and is a semiconductor region in a Schottky barrier diode. , 2. It is a field silicon oxide film formed by selective thermal oxidation treatment using a nitride film as an oxidation inhibiting film. It has a LOCO8 structure or an isoplanar structure, and is also used in isolation areas in bipolar ICs. It is something that grows old. As shown in the figure, the shape of this silicon oxide film 2 is such that a bird's beak is formed in the periphery under the nitride film. , 31d, aluminum or platinum, which is a barrier metal and is used as an IC wiring metal;
The base film is made of tungsten, chromium, molybdenum, etc., and a conductive film for electrodes is layered on top of the base film.
上記の例においては、バリアメタ／Ｉ／３とＮ型シリコ
ン領域ｌとの周辺界面の全部をバードビーク形状を有す
る酸化シリコン膜２により介在させている構造としてい
る。In the above example, the structure is such that the entire peripheral interface between the barrier metal /I/3 and the N-type silicon region 1 is interposed by the silicon oxide film 2 having a bird's beak shape.
上述したように、上記のＩＣにおけるショットキバリア
ダイオードは、バリアメタル３とＮＳシリコン（半導体
）領域１との周辺界面にバードビーク形状の酸化シリコ
ン膜２を介在させてなるものであるため、その領域での
電界集中をバードビーク形状の酸化シリコン膜２によっ
て緩和すると共に、結晶欠陥等の発生が防止できる。こ
れは、バードビーク形状の酸化シリコン膜１は、連続的
に膜厚が変化してなり、従来のＭＯ８構造のものに酷似
した効果を奏するためで、このバードビーク形状のもの
に、選択熱酸化により酸化シリコン膜２を形成する際、
自然にできるものである。そのため、上記の例は、従来
のガードリング構造や′ＭＯ８構造と採用して、素子面
積を大とする必要がなく、逆方向電圧−電流特性がより
、リーク電流が極めて小さい、す□ぐれた性能のショッ
トキバリアダイオードである。また、このショットキバ
リアダイオードは、その製作において、極めて簡易であ
る。As mentioned above, the Schottky barrier diode in the above IC is formed by interposing the bird's beak-shaped silicon oxide film 2 at the peripheral interface between the barrier metal 3 and the NS silicon (semiconductor) region 1. The bird's beak-shaped silicon oxide film 2 can alleviate the electric field concentration and prevent the occurrence of crystal defects. This is because the bird's beak-shaped silicon oxide film 1 has a film thickness that changes continuously and has an effect very similar to that of the conventional MO8 structure. When forming the silicon film 2,
It's something that comes naturally. Therefore, the above example adopts the conventional guard ring structure or 'MO8 structure, which eliminates the need to increase the element area, has better reverse voltage-current characteristics, and has an extremely small leakage current. High performance Schottky barrier diode. Further, this Schottky barrier diode is extremely simple to manufacture.
第２図は１本発明の実施例を示す素子要部の断面図でＴ
ｈｅ、バリアメタル３とＮ型シリコン領域１との周辺界
面の一部にガードリング用Ｐ＋型層４を設け、その上に
通常の絶縁膜５を設けているものであろう他の領域はバ
ードビークをもつ酸化シリコン膜２である。FIG. 2 is a sectional view of the main part of an element showing an embodiment of the present invention.
he, a guard ring P+ type layer 4 is provided in a part of the peripheral interface between the barrier metal 3 and the N type silicon region 1, and the other area where a normal insulating film 5 is provided is a bird's beak. This is a silicon oxide film 2 having the following characteristics.
これは、バリアメタル３とＮ型シリコン領域１との周辺
界面を設計仕様上バードビークをもつ酸イヒシリコン膜
２により介在させることができない場合に有効である。This is effective when the peripheral interface between the barrier metal 3 and the N-type silicon region 1 cannot be interposed by the oxidized silicon film 2 having a bird's beak due to design specifications.
本発明は、アイソプレーナ構造のバイポーラＩＣやＬＯ
ＣＯ８構造のＭＩＳＩＣ等の選択熱酸化により絶縁膜を
形成する半導体装置におけるショットキバリアダイオー
ドに適用できるものである。The present invention provides bipolar ICs with isoplanar structure and LO
The present invention can be applied to a Schottky barrier diode in a semiconductor device such as a MISIC with a CO8 structure in which an insulating film is formed by selective thermal oxidation.
第１図は本発明者が検討したＩＣにおけるショットキバ
リアダイオードを示す断面図、第２図は本発明の実施例
を示す断面図である。
１・・・Ｎ型シリコンウエーノ・、２・・・選択熱酸化
により設けたバードビークをもつ酸化シリコン膜、３・
・・バリアメタル、４・・・Ｐ＋型層、５・・・醸化シ
リコン膜。FIG. 1 is a sectional view showing a Schottky barrier diode in an IC studied by the present inventor, and FIG. 2 is a sectional view showing an embodiment of the present invention. 1...N-type silicon waeno, 2...Silicon oxide film with bird's beak formed by selective thermal oxidation, 3.
... Barrier metal, 4... P+ type layer, 5... Fermented silicon film.
Claims (1)
面の少なくとも一部領域に選択酸化処理なもって形成さ
れた酸化膜が介在し、前記第１導電型の半導体領域の１
部には上記バリアメタルと接する第２導電型の半導体領
域を有することを特徴とするショットキバリアダイオー
ドを有する半導体装置。1. An oxide film formed by selective oxidation treatment is interposed in at least a part of the peripheral interface between the semiconductor region of the first conductivity type and the barrier metal;
1. A semiconductor device having a Schottky barrier diode, comprising a semiconductor region of a second conductivity type in contact with the barrier metal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP555784A JPS59155178A (en) | 1984-01-18 | 1984-01-18 | Semiconductor device with schottky barrier diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP555784A JPS59155178A (en) | 1984-01-18 | 1984-01-18 | Semiconductor device with schottky barrier diode |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5532477A Division JPS53140979A (en) | 1977-05-16 | 1977-05-16 | Semiconductor device having schottky barrier diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59155178A true JPS59155178A (en) | 1984-09-04 |
Family
ID=11614497
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP555784A Pending JPS59155178A (en) | 1984-01-18 | 1984-01-18 | Semiconductor device with schottky barrier diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59155178A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014011175A (en) * | 2012-06-27 | 2014-01-20 | Canon Inc | Schottky barrier diode and device using the same |
| JP2017085184A (en) * | 2017-02-14 | 2017-05-18 | キヤノン株式会社 | Schottky barrier diode and device using the same |
-
1984
- 1984-01-18 JP JP555784A patent/JPS59155178A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014011175A (en) * | 2012-06-27 | 2014-01-20 | Canon Inc | Schottky barrier diode and device using the same |
| US9553211B2 (en) | 2012-06-27 | 2017-01-24 | Canon Kabushiki Kaisha | Schottky barrier diode and apparatus using the same |
| JP2017085184A (en) * | 2017-02-14 | 2017-05-18 | キヤノン株式会社 | Schottky barrier diode and device using the same |
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