JPS59155122A - 半導体薄膜およびその形成方法 - Google Patents

半導体薄膜およびその形成方法

Info

Publication number
JPS59155122A
JPS59155122A JP58028571A JP2857183A JPS59155122A JP S59155122 A JPS59155122 A JP S59155122A JP 58028571 A JP58028571 A JP 58028571A JP 2857183 A JP2857183 A JP 2857183A JP S59155122 A JPS59155122 A JP S59155122A
Authority
JP
Japan
Prior art keywords
thin film
disilane
glow discharge
formation
conductivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58028571A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0584051B2 (enExample
Inventor
Nobuhiro Fukuda
福田　信弘
Makoto Konagai
誠 小長井
Yutaka Ohashi
豊 大橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsui Toatsu Chemicals Inc
Original Assignee
Mitsui Toatsu Chemicals Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Toatsu Chemicals Inc filed Critical Mitsui Toatsu Chemicals Inc
Priority to JP58028571A priority Critical patent/JPS59155122A/ja
Publication of JPS59155122A publication Critical patent/JPS59155122A/ja
Publication of JPH0584051B2 publication Critical patent/JPH0584051B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/24—
    • H10P14/3411—

Landscapes

  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)
JP58028571A 1983-02-24 1983-02-24 半導体薄膜およびその形成方法 Granted JPS59155122A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58028571A JPS59155122A (ja) 1983-02-24 1983-02-24 半導体薄膜およびその形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58028571A JPS59155122A (ja) 1983-02-24 1983-02-24 半導体薄膜およびその形成方法

Publications (2)

Publication Number Publication Date
JPS59155122A true JPS59155122A (ja) 1984-09-04
JPH0584051B2 JPH0584051B2 (enExample) 1993-11-30

Family

ID=12252303

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58028571A Granted JPS59155122A (ja) 1983-02-24 1983-02-24 半導体薄膜およびその形成方法

Country Status (1)

Country Link
JP (1) JPS59155122A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61283113A (ja) * 1985-06-10 1986-12-13 Sanyo Electric Co Ltd エピタキシヤル成長方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
APPL.PHYS.LETT=1983 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61283113A (ja) * 1985-06-10 1986-12-13 Sanyo Electric Co Ltd エピタキシヤル成長方法

Also Published As

Publication number Publication date
JPH0584051B2 (enExample) 1993-11-30

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