JPS5915504Y2 - Resin-encapsulated semiconductor device - Google Patents
Resin-encapsulated semiconductor deviceInfo
- Publication number
- JPS5915504Y2 JPS5915504Y2 JP1978168720U JP16872078U JPS5915504Y2 JP S5915504 Y2 JPS5915504 Y2 JP S5915504Y2 JP 1978168720 U JP1978168720 U JP 1978168720U JP 16872078 U JP16872078 U JP 16872078U JP S5915504 Y2 JPS5915504 Y2 JP S5915504Y2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor chip
- resin
- semiconductor device
- glass
- lead wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
Description
【考案の詳細な説明】
本考案は樹脂封止型半導体装置、特にガラス被覆処理を
した半導体チップによる樹脂封止半導体装置に関するも
のである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a resin-sealed semiconductor device, and particularly to a resin-sealed semiconductor device using a glass-coated semiconductor chip.
従来の樹脂封止型半導体装置として第１図に例示するよ
うな構造が知られている。A structure as illustrated in FIG. 1 is known as a conventional resin-sealed semiconductor device.
即ち、１はリード線、２は端子板、３は半導体チップ、
４は絶縁ワニス、５はエポキシ樹脂がらなり、比較的小
電力の整流ダイオードなどに利用されている。That is, 1 is a lead wire, 2 is a terminal board, 3 is a semiconductor chip,
4 is made of insulating varnish, and 5 is made of epoxy resin, and is used for relatively low-power rectifier diodes.
しかるに、第１図のような樹脂封止型半導体装置の構造
では半導体チップの電極部と接着する端子板の面が単な
る平面であるため、半導体チップの所定部分、例えば露
出接合部にガラス被覆処理を施し、表面不活性化による
信頼性向上を図った半導体装置においては電極部と端子
板の接着時、又はエポキシ樹脂などによる成型時にガラ
ス被覆部とストレスがかかり、折角処理したガラス被覆
部が破損するなどの障害を発生する。However, in the structure of a resin-sealed semiconductor device as shown in FIG. 1, the surface of the terminal plate that is bonded to the electrode portion of the semiconductor chip is simply a flat surface. In semiconductor devices that have been treated to improve reliability by surface inactivation, stress is applied to the glass covering part when bonding the electrode part and the terminal plate, or when molding with epoxy resin, etc., and the glass covering part, which has been carefully treated, can be damaged. This may cause problems such as
本考案は前記するようなガラス被覆部の破損による故障
、製造時の困難性を解決し、あわせてリード線に加えら
れる回転ストレスを阻止するようにしたものである。The present invention solves the above-mentioned troubles caused by breakage of the glass coating and the difficulties in manufacturing, and also prevents rotational stress from being applied to the lead wires.
次に図面によって本考案を詳細に説明する。Next, the present invention will be explained in detail with reference to the drawings.
第２図は本考案の実施例をしめず断面構造図である。FIG. 2 is a cross-sectional structural diagram showing an embodiment of the present invention.
１はリード線、２は端子板、３は半導体チップ、４は絶
縁性保護物質、５はエポキシ樹脂などのモールド材、６
は回転防止突起部、７は電極部、８はガラス被覆部、９
は電極接着突起台である。1 is a lead wire, 2 is a terminal board, 3 is a semiconductor chip, 4 is an insulating protective material, 5 is a molding material such as epoxy resin, 6
7 is the anti-rotation protrusion, 7 is the electrode portion, 8 is the glass covering portion, 9 is the anti-rotation protrusion;
is the electrode adhesive protrusion base.
又、第３図ａ、ｌ）にリード線部分のみをしめした。Also, only the lead wire portion is shown in Fig. 3 a, l).
ｂは正面図であり、ａはその側面図であり、同一符号は
同一部分をあられしている。b is a front view, a is a side view thereof, and the same reference numerals represent the same parts.
本考案では端子板２の一端に設する電極接着突起台９を
半導体チップ３の電極部７に半田付などで接着すること
により、半導体チップの表面の所定部分、例えば露出接
合部に施したガラス被覆部８に製造時及び使用時にスト
レスが加わらない構造となる。In the present invention, by adhering the electrode adhesion protrusion 9 provided at one end of the terminal board 2 to the electrode part 7 of the semiconductor chip 3 by soldering or the like, glass is applied to a predetermined part of the surface of the semiconductor chip, for example, an exposed joint part. The structure is such that stress is not applied to the covering portion 8 during manufacturing and use.
即ち、電極接着突起台９の高さはガラス被覆部８の厚さ
以上にすることにより、所期の目的を達威しえる。That is, by making the height of the electrode adhesion protrusion base 9 greater than the thickness of the glass covering portion 8, the intended purpose can be achieved.
更に本考案においては端子板２の電極接着突起台９と反
対側に回転防止突起部６を設けることによりリード線１
に加わる回転ストレスを半導体チップ３の部分に加える
ことなくモールド材部分で吸収する。Furthermore, in the present invention, by providing the anti-rotation protrusion 6 on the opposite side of the terminal plate 2 from the electrode adhesion protrusion base 9, the lead wire 1
Rotational stress applied to the semiconductor chip 3 is absorbed by the molding material part without being applied to the semiconductor chip 3 part.
本考案のように構成した樹脂封止型半導体装置は、表面
安定化、特にガラス被覆処理した高信頼性半導体チップ
の特性を製造時及び使用時における熱的９機械的ストレ
スから保護し、実用上その効果大なるものであり、整流
ダイオード、双方向性スイッチングダイオードなどとし
て利用しうる。The resin-sealed semiconductor device constructed as in the present invention protects the characteristics of the highly reliable semiconductor chip with surface stabilization, especially glass coating, from thermal and mechanical stress during manufacturing and use, and is useful for practical use. The effect is great, and it can be used as a rectifier diode, bidirectional switching diode, etc.
第１図は従来の樹脂封止型半導体装置、第２図は本考案
の実施例をしめす断面構造図、第３図においてリード線
部分の正面図をｂ、側面図をａでしめす。
図中、１はリード線、２は端子板、３は半導体チップ、
４は絶縁性保護物質、５はモールド材、６は回転防止突
起部、７は電極部、８はガラス被覆部、９は電極接着突
起台である。FIG. 1 shows a conventional resin-sealed semiconductor device, FIG. 2 shows a cross-sectional structure of an embodiment of the present invention, and FIG. 3 shows a front view of the lead wire portion at b and a side view at a. In the figure, 1 is a lead wire, 2 is a terminal board, 3 is a semiconductor chip,
4 is an insulating protective material, 5 is a molding material, 6 is an anti-rotation protrusion, 7 is an electrode part, 8 is a glass covering part, and 9 is an electrode adhesion protrusion base.
Claims (1)
子板を一端に有するリード線からなり、該端子板の先端
に該半導体チップの電極部と接着するための電極接着突
起台を設け、且つ該端子板の先端と反対側にリード線の
回転を防止する回転防止突起部を有し、該電極接着突起
台の高さを該半導体チップのガラス被覆処理のガラス層
の厚み以上としたことを特徴とする樹脂封止型半導体装
置。It consists of a semiconductor chip whose surface is coated with glass at a predetermined portion and a lead wire having a terminal plate at one end, an electrode adhesion protrusion is provided at the tip of the terminal plate for adhering to the electrode part of the semiconductor chip, and the terminal It has a rotation preventing protrusion on the opposite side of the tip of the plate to prevent rotation of the lead wire, and the height of the electrode adhesion protrusion is set to be greater than or equal to the thickness of the glass layer of the glass coating of the semiconductor chip. resin-sealed semiconductor device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1978168720U JPS5915504Y2 (en) | 1978-12-08 | 1978-12-08 | Resin-encapsulated semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1978168720U JPS5915504Y2 (en) | 1978-12-08 | 1978-12-08 | Resin-encapsulated semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5586350U JPS5586350U (en) | 1980-06-14 |
| JPS5915504Y2 true JPS5915504Y2 (en) | 1984-05-08 |
Family
ID=29170126
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1978168720U Expired JPS5915504Y2 (en) | 1978-12-08 | 1978-12-08 | Resin-encapsulated semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5915504Y2 (en) |
-
1978
- 1978-12-08 JP JP1978168720U patent/JPS5915504Y2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5586350U (en) | 1980-06-14 |
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