JPS59152686A - 半導体レ−ザ素子 - Google Patents

半導体レ−ザ素子

Info

Publication number
JPS59152686A
JPS59152686A JP2807583A JP2807583A JPS59152686A JP S59152686 A JPS59152686 A JP S59152686A JP 2807583 A JP2807583 A JP 2807583A JP 2807583 A JP2807583 A JP 2807583A JP S59152686 A JPS59152686 A JP S59152686A
Authority
JP
Japan
Prior art keywords
laser
region
active layer
semiconductor laser
oscillation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2807583A
Other languages
English (en)
Japanese (ja)
Other versions
JPH047113B2 (enrdf_load_html_response
Inventor
Morichika Yano
矢野　盛規
Saburo Yamamoto
三郎 山本
Hiroshi Hayashi
寛 林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP2807583A priority Critical patent/JPS59152686A/ja
Priority to DE8383301600T priority patent/DE3376936D1/de
Priority to EP83301600A priority patent/EP0095826B1/en
Publication of JPS59152686A publication Critical patent/JPS59152686A/ja
Publication of JPH047113B2 publication Critical patent/JPH047113B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP2807583A 1982-05-28 1983-02-21 半導体レ−ザ素子 Granted JPS59152686A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2807583A JPS59152686A (ja) 1983-02-21 1983-02-21 半導体レ−ザ素子
DE8383301600T DE3376936D1 (en) 1982-05-28 1983-03-22 Semiconductor laser
EP83301600A EP0095826B1 (en) 1982-05-28 1983-03-22 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2807583A JPS59152686A (ja) 1983-02-21 1983-02-21 半導体レ−ザ素子

Publications (2)

Publication Number Publication Date
JPS59152686A true JPS59152686A (ja) 1984-08-31
JPH047113B2 JPH047113B2 (enrdf_load_html_response) 1992-02-07

Family

ID=12238649

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2807583A Granted JPS59152686A (ja) 1982-05-28 1983-02-21 半導体レ−ザ素子

Country Status (1)

Country Link
JP (1) JPS59152686A (enrdf_load_html_response)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008153260A (ja) * 2006-12-14 2008-07-03 Fujitsu Ltd 光半導体素子及びその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008153260A (ja) * 2006-12-14 2008-07-03 Fujitsu Ltd 光半導体素子及びその製造方法

Also Published As

Publication number Publication date
JPH047113B2 (enrdf_load_html_response) 1992-02-07

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