JPS59143330A - プラズマエツチング装置 - Google Patents
プラズマエツチング装置Info
- Publication number
- JPS59143330A JPS59143330A JP59014980A JP1498084A JPS59143330A JP S59143330 A JPS59143330 A JP S59143330A JP 59014980 A JP59014980 A JP 59014980A JP 1498084 A JP1498084 A JP 1498084A JP S59143330 A JPS59143330 A JP S59143330A
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- plasma
- magnetic field
- substrate
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001020 plasma etching Methods 0.000 title claims description 20
- 239000000758 substrate Substances 0.000 claims description 39
- 238000005530 etching Methods 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 23
- 239000004065 semiconductor Substances 0.000 claims description 18
- 239000000919 ceramic Substances 0.000 claims description 4
- 230000005405 multipole Effects 0.000 claims description 2
- 239000002245 particle Substances 0.000 claims 5
- 239000000463 material Substances 0.000 claims 4
- 238000009832 plasma treatment Methods 0.000 claims 2
- 230000001846 repelling effect Effects 0.000 claims 2
- 235000006693 Cassia laevigata Nutrition 0.000 claims 1
- 241000735631 Senna pendula Species 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 229940124513 senna glycoside Drugs 0.000 claims 1
- 239000007787 solid Substances 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 27
- 150000002500 ions Chemical class 0.000 description 11
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- BGPVFRJUHWVFKM-UHFFFAOYSA-N N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] Chemical compound N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] BGPVFRJUHWVFKM-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 235000013339 cereals Nutrition 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- KPLQYGBQNPPQGA-UHFFFAOYSA-N cobalt samarium Chemical compound [Co].[Sm] KPLQYGBQNPPQGA-UHFFFAOYSA-N 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 230000005596 ionic collisions Effects 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 229910000938 samarium–cobalt magnet Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
- H01J37/32688—Multi-cusp fields
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/462,200 US4483737A (en) | 1983-01-31 | 1983-01-31 | Method and apparatus for plasma etching a substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59143330A true JPS59143330A (ja) | 1984-08-16 |
Family
ID=23835545
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59014980A Pending JPS59143330A (ja) | 1983-01-31 | 1984-01-30 | プラズマエツチング装置 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US4483737A (enExample) |
| JP (1) | JPS59143330A (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60246599A (ja) * | 1983-06-15 | 1985-12-06 | セントル・ナシヨナル・ドウ・ラ・ルシエルシユ・サイエンテイフイツク(セ・エン・エ−ル・エス) | 高密度・低電子温度の均質大容積プラズマ発生方法および装置 |
| JPS62172700A (ja) * | 1986-01-24 | 1987-07-29 | 理化学研究所 | プラズマ閉込用磁場発生装置 |
| JPH02235332A (ja) * | 1989-01-25 | 1990-09-18 | Internatl Business Mach Corp <Ibm> | プラズマ処理装置 |
Families Citing this family (64)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59175125A (ja) * | 1983-03-24 | 1984-10-03 | Toshiba Corp | ドライエツチング装置 |
| JPS6021382A (ja) * | 1983-07-15 | 1985-02-02 | Canon Inc | プラズマcvd装置 |
| US4572759A (en) * | 1984-12-26 | 1986-02-25 | Benzing Technology, Inc. | Troide plasma reactor with magnetic enhancement |
| US4623417A (en) * | 1985-08-23 | 1986-11-18 | Texas Instruments Incorporated | Magnetron plasma reactor |
| US4786352A (en) * | 1986-09-12 | 1988-11-22 | Benzing Technologies, Inc. | Apparatus for in-situ chamber cleaning |
| GB8622820D0 (en) * | 1986-09-23 | 1986-10-29 | Nordiko Ltd | Electrode assembly & apparatus |
| JPH0834205B2 (ja) * | 1986-11-21 | 1996-03-29 | 株式会社東芝 | ドライエツチング装置 |
| KR880013424A (ko) * | 1987-04-08 | 1988-11-30 | 미타 가츠시게 | 플라즈머 장치 |
| US5643473A (en) * | 1987-07-31 | 1997-07-01 | Hitachi, Ltd. | Dry etching method |
| US5032205A (en) * | 1989-05-05 | 1991-07-16 | Wisconsin Alumni Research Foundation | Plasma etching apparatus with surface magnetic fields |
| US4990229A (en) * | 1989-06-13 | 1991-02-05 | Plasma & Materials Technologies, Inc. | High density plasma deposition and etching apparatus |
| US5032202A (en) * | 1989-10-03 | 1991-07-16 | Martin Marietta Energy Systems, Inc. | Plasma generating apparatus for large area plasma processing |
| US5196670A (en) * | 1989-10-03 | 1993-03-23 | University Of Cincinnati | Magnetic plasma producing device with adjustable resonance plane |
| DE69218720T2 (de) * | 1991-10-17 | 1997-07-17 | Applied Materials Inc | Plasmareaktor |
| US5306985A (en) * | 1992-07-17 | 1994-04-26 | Sematech, Inc. | ECR apparatus with magnetic coil for plasma refractive index control |
| US5457298A (en) * | 1993-07-27 | 1995-10-10 | Tulip Memory Systems, Inc. | Coldwall hollow-cathode plasma device for support of gas discharges |
| US5451259A (en) * | 1994-02-17 | 1995-09-19 | Krogh; Ole D. | ECR plasma source for remote processing |
| US5869802A (en) * | 1995-12-21 | 1999-02-09 | Plasmaquest, Inc. | Plasma producing structure |
| TW303480B (en) * | 1996-01-24 | 1997-04-21 | Applied Materials Inc | Magnetically confined plasma reactor for processing a semiconductor wafer |
| US6048435A (en) * | 1996-07-03 | 2000-04-11 | Tegal Corporation | Plasma etch reactor and method for emerging films |
| US6500314B1 (en) * | 1996-07-03 | 2002-12-31 | Tegal Corporation | Plasma etch reactor and method |
| US6165375A (en) * | 1997-09-23 | 2000-12-26 | Cypress Semiconductor Corporation | Plasma etching method |
| US6163006A (en) * | 1998-02-06 | 2000-12-19 | Astex-Plasmaquest, Inc. | Permanent magnet ECR plasma source with magnetic field optimization |
| US20020069970A1 (en) * | 2000-03-07 | 2002-06-13 | Applied Materials, Inc. | Temperature controlled semiconductor processing chamber liner |
| US6652763B1 (en) * | 2000-04-03 | 2003-11-25 | Hrl Laboratories, Llc | Method and apparatus for large-scale diamond polishing |
| US6863835B1 (en) | 2000-04-25 | 2005-03-08 | James D. Carducci | Magnetic barrier for plasma in chamber exhaust |
| US6664740B2 (en) * | 2001-02-01 | 2003-12-16 | The Regents Of The University Of California | Formation of a field reversed configuration for magnetic and electrostatic confinement of plasma |
| US6611106B2 (en) * | 2001-03-19 | 2003-08-26 | The Regents Of The University Of California | Controlled fusion in a field reversed configuration and direct energy conversion |
| US6602381B1 (en) | 2001-04-30 | 2003-08-05 | Lam Research Corporation | Plasma confinement by use of preferred RF return path |
| US7632375B2 (en) * | 2004-12-30 | 2009-12-15 | Lam Research Corporation | Electrically enhancing the confinement of plasma |
| US9607719B2 (en) | 2005-03-07 | 2017-03-28 | The Regents Of The University Of California | Vacuum chamber for plasma electric generation system |
| US8031824B2 (en) * | 2005-03-07 | 2011-10-04 | Regents Of The University Of California | Inductive plasma source for plasma electric generation system |
| US9123512B2 (en) * | 2005-03-07 | 2015-09-01 | The Regents Of The Unviersity Of California | RF current drive for plasma electric generation system |
| US8444926B2 (en) * | 2007-01-30 | 2013-05-21 | Applied Materials, Inc. | Processing chamber with heated chamber liner |
| CN101728224B (zh) * | 2008-10-10 | 2012-05-23 | 鼎岳科技股份有限公司 | 利用于半导体的制造设备以及制造方法 |
| DK2251454T3 (da) | 2009-05-13 | 2014-10-13 | Sio2 Medical Products Inc | Coating og inspektion af beholder |
| US9458536B2 (en) | 2009-07-02 | 2016-10-04 | Sio2 Medical Products, Inc. | PECVD coating methods for capped syringes, cartridges and other articles |
| US11624115B2 (en) | 2010-05-12 | 2023-04-11 | Sio2 Medical Products, Inc. | Syringe with PECVD lubrication |
| US9878101B2 (en) | 2010-11-12 | 2018-01-30 | Sio2 Medical Products, Inc. | Cyclic olefin polymer vessels and vessel coating methods |
| US9272095B2 (en) | 2011-04-01 | 2016-03-01 | Sio2 Medical Products, Inc. | Vessels, contact surfaces, and coating and inspection apparatus and methods |
| AU2012318242A1 (en) | 2011-11-11 | 2013-05-30 | Sio2 Medical Products, Inc. | Passivation, pH protective or lubricity coating for pharmaceutical package, coating process and apparatus |
| US11116695B2 (en) | 2011-11-11 | 2021-09-14 | Sio2 Medical Products, Inc. | Blood sample collection tube |
| CA2855698C (en) | 2011-11-14 | 2020-03-10 | The Regents Of The University Of California | Systems and methods for forming and maintaining a high performance frc |
| EP2846755A1 (en) | 2012-05-09 | 2015-03-18 | SiO2 Medical Products, Inc. | Saccharide protective coating for pharmaceutical package |
| US20150297800A1 (en) | 2012-07-03 | 2015-10-22 | Sio2 Medical Products, Inc. | SiOx BARRIER FOR PHARMACEUTICAL PACKAGE AND COATING PROCESS |
| CA2890066C (en) | 2012-11-01 | 2021-11-09 | Sio2 Medical Products, Inc. | Coating inspection method |
| WO2014078666A1 (en) | 2012-11-16 | 2014-05-22 | Sio2 Medical Products, Inc. | Method and apparatus for detecting rapid barrier coating integrity characteristics |
| EP2925903B1 (en) | 2012-11-30 | 2022-04-13 | Si02 Medical Products, Inc. | Controlling the uniformity of pecvd deposition on medical syringes, cartridges, and the like |
| US9764093B2 (en) | 2012-11-30 | 2017-09-19 | Sio2 Medical Products, Inc. | Controlling the uniformity of PECVD deposition |
| EP2961858B1 (en) | 2013-03-01 | 2022-09-07 | Si02 Medical Products, Inc. | Coated syringe. |
| CN105392916B (zh) | 2013-03-11 | 2019-03-08 | Sio2医药产品公司 | 涂布包装材料 |
| US9937099B2 (en) | 2013-03-11 | 2018-04-10 | Sio2 Medical Products, Inc. | Trilayer coated pharmaceutical packaging with low oxygen transmission rate |
| EP2971227B1 (en) | 2013-03-15 | 2017-11-15 | Si02 Medical Products, Inc. | Coating method. |
| CA2924205C (en) | 2013-09-24 | 2023-01-10 | Tri Alpha Energy, Inc. | Systems and methods for forming and maintaining a high performance frc |
| EP3693493A1 (en) | 2014-03-28 | 2020-08-12 | SiO2 Medical Products, Inc. | Antistatic coatings for plastic vessels |
| MY182756A (en) | 2014-10-13 | 2021-02-05 | Tri Alpha Energy Inc | Systems and methods for merging and compressing compact tori |
| MX369532B (es) | 2014-10-30 | 2019-11-11 | Tae Tech Inc | Sistemas y metodos para formar y mantener una configuracion de campo invertido (frc) de alto rendimiento. |
| SI3295459T1 (sl) | 2015-05-12 | 2021-04-30 | Tae Technologies, Inc. | Sistemi in postopki za zmanjšanje neželenih vrtinčnih tokov |
| US11077233B2 (en) | 2015-08-18 | 2021-08-03 | Sio2 Medical Products, Inc. | Pharmaceutical and other packaging with low oxygen transmission rate |
| DK3357067T3 (da) | 2015-11-13 | 2021-11-22 | Tae Tech Inc | Systemer og fremgangsmåder til frc- plasmapositionsstabilitet |
| BR112019008478B1 (pt) | 2016-10-28 | 2024-03-05 | Tae Technologies, Inc | Método para gerar e manter um campo magnético com uma configuração de campo reverso (frc) |
| JP7365693B2 (ja) | 2016-11-04 | 2023-10-20 | ティーエーイー テクノロジーズ, インコーポレイテッド | マルチスケール捕捉タイプ真空ポンピングを用いた高性能frcの改良された持続性のためのシステムおよび方法 |
| PE20190836A1 (es) | 2016-11-15 | 2019-06-17 | Tae Tech Inc | Sistemas y metodos para mejorar el sostenimiento de una frc de alto rendimiento y un calentado de los electrones de onda rapida de alta armonica en una frc de alto redimiento |
| BR112022013552A2 (pt) | 2020-01-13 | 2022-09-06 | Tae Tech Inc | Sistema e métodos para formação e manutenção de plasma frc de alta energia e temperatura por meio de fusão de esferoma e injeção de feixe neutro |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5494282A (en) * | 1977-12-30 | 1979-07-25 | Ibm | Negative ion extractor |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4361472A (en) * | 1980-09-15 | 1982-11-30 | Vac-Tec Systems, Inc. | Sputtering method and apparatus utilizing improved ion source |
-
1983
- 1983-01-31 US US06/462,200 patent/US4483737A/en not_active Expired - Lifetime
-
1984
- 1984-01-30 JP JP59014980A patent/JPS59143330A/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5494282A (en) * | 1977-12-30 | 1979-07-25 | Ibm | Negative ion extractor |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60246599A (ja) * | 1983-06-15 | 1985-12-06 | セントル・ナシヨナル・ドウ・ラ・ルシエルシユ・サイエンテイフイツク(セ・エン・エ−ル・エス) | 高密度・低電子温度の均質大容積プラズマ発生方法および装置 |
| JPS62172700A (ja) * | 1986-01-24 | 1987-07-29 | 理化学研究所 | プラズマ閉込用磁場発生装置 |
| JPH02235332A (ja) * | 1989-01-25 | 1990-09-18 | Internatl Business Mach Corp <Ibm> | プラズマ処理装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| US4483737B1 (enExample) | 1991-07-30 |
| US4483737A (en) | 1984-11-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS59143330A (ja) | プラズマエツチング装置 | |
| US6250250B1 (en) | Multiple-cell source of uniform plasma | |
| US6849857B2 (en) | Beam processing apparatus | |
| US7863582B2 (en) | Ion-beam source | |
| US5767628A (en) | Helicon plasma processing tool utilizing a ferromagnetic induction coil with an internal cooling channel | |
| US5032205A (en) | Plasma etching apparatus with surface magnetic fields | |
| KR102478896B1 (ko) | 이온-이온 플라즈마 원자 층 에칭 프로세스 및 반응기 | |
| US5762814A (en) | Plasma processing method and apparatus using plasma produced by microwaves | |
| US5430355A (en) | RF induction plasma source for plasma processing | |
| US4277304A (en) | Ion source and ion etching process | |
| US7034285B2 (en) | Beam source and beam processing apparatus | |
| US6949735B1 (en) | Beam source | |
| US4713585A (en) | Ion source | |
| US4873445A (en) | Source of ions of the triode type with a single high frequency exitation ionization chamber and magnetic confinement of the multipole type | |
| US5686796A (en) | Ion implantation helicon plasma source with magnetic dipoles | |
| GB2231197A (en) | Plasma apparatus electrode assembly | |
| WO2002078041A2 (en) | Neutral particle beam processing apparatus | |
| EP0591975B1 (en) | Two parallel plate electrode type dry etching apparatus | |
| JPH10270430A (ja) | プラズマ処理装置 | |
| US6909086B2 (en) | Neutral particle beam processing apparatus | |
| US10790153B2 (en) | Methods and apparatus for electron beam etching process | |
| US6858838B2 (en) | Neutral particle beam processing apparatus | |
| KR20020004934A (ko) | 선형이온빔의 플라즈마소스 | |
| US6899527B2 (en) | Closed-drift hall effect plasma vacuum pump for process reactors | |
| WO2009048294A2 (en) | Magnetized inductively coupled plasma processing apparatus and generating method |