JPS59143330A - プラズマエツチング装置 - Google Patents

プラズマエツチング装置

Info

Publication number
JPS59143330A
JPS59143330A JP59014980A JP1498084A JPS59143330A JP S59143330 A JPS59143330 A JP S59143330A JP 59014980 A JP59014980 A JP 59014980A JP 1498084 A JP1498084 A JP 1498084A JP S59143330 A JPS59143330 A JP S59143330A
Authority
JP
Japan
Prior art keywords
chamber
plasma
magnetic field
substrate
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59014980A
Other languages
English (en)
Japanese (ja)
Inventor
トーマス・デイー・マンテイ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
UNI SHINSHINATEI
YUNIBAASHITEI OBU SHINSHINATEI
Original Assignee
UNI SHINSHINATEI
YUNIBAASHITEI OBU SHINSHINATEI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by UNI SHINSHINATEI, YUNIBAASHITEI OBU SHINSHINATEI filed Critical UNI SHINSHINATEI
Publication of JPS59143330A publication Critical patent/JPS59143330A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32688—Multi-cusp fields

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • ing And Chemical Polishing (AREA)
JP59014980A 1983-01-31 1984-01-30 プラズマエツチング装置 Pending JPS59143330A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/462,200 US4483737A (en) 1983-01-31 1983-01-31 Method and apparatus for plasma etching a substrate

Publications (1)

Publication Number Publication Date
JPS59143330A true JPS59143330A (ja) 1984-08-16

Family

ID=23835545

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59014980A Pending JPS59143330A (ja) 1983-01-31 1984-01-30 プラズマエツチング装置

Country Status (2)

Country Link
US (1) US4483737A (cg-RX-API-DMAC7.html)
JP (1) JPS59143330A (cg-RX-API-DMAC7.html)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60246599A (ja) * 1983-06-15 1985-12-06 セントル・ナシヨナル・ドウ・ラ・ルシエルシユ・サイエンテイフイツク（セ・エン・エ−ル・エス） 高密度・低電子温度の均質大容積プラズマ発生方法および装置
JPS62172700A (ja) * 1986-01-24 1987-07-29 理化学研究所 プラズマ閉込用磁場発生装置
JPH02235332A (ja) * 1989-01-25 1990-09-18 Internatl Business Mach Corp <Ibm> プラズマ処理装置

Families Citing this family (64)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59175125A (ja) * 1983-03-24 1984-10-03 Toshiba Corp ドライエツチング装置
JPS6021382A (ja) * 1983-07-15 1985-02-02 Canon Inc プラズマｃｖｄ装置
US4572759A (en) * 1984-12-26 1986-02-25 Benzing Technology, Inc. Troide plasma reactor with magnetic enhancement
US4623417A (en) * 1985-08-23 1986-11-18 Texas Instruments Incorporated Magnetron plasma reactor
US4786352A (en) * 1986-09-12 1988-11-22 Benzing Technologies, Inc. Apparatus for in-situ chamber cleaning
GB8622820D0 (en) * 1986-09-23 1986-10-29 Nordiko Ltd Electrode assembly & apparatus
JPH0834205B2 (ja) * 1986-11-21 1996-03-29 株式会社東芝 ドライエツチング装置
KR880013424A (ko) * 1987-04-08 1988-11-30 미타 가츠시게 플라즈머 장치
US5643473A (en) * 1987-07-31 1997-07-01 Hitachi, Ltd. Dry etching method
US5032205A (en) * 1989-05-05 1991-07-16 Wisconsin Alumni Research Foundation Plasma etching apparatus with surface magnetic fields
US4990229A (en) * 1989-06-13 1991-02-05 Plasma & Materials Technologies, Inc. High density plasma deposition and etching apparatus
US5032202A (en) * 1989-10-03 1991-07-16 Martin Marietta Energy Systems, Inc. Plasma generating apparatus for large area plasma processing
US5196670A (en) * 1989-10-03 1993-03-23 University Of Cincinnati Magnetic plasma producing device with adjustable resonance plane
DE69218720T2 (de) * 1991-10-17 1997-07-17 Applied Materials Inc Plasmareaktor
US5306985A (en) * 1992-07-17 1994-04-26 Sematech, Inc. ECR apparatus with magnetic coil for plasma refractive index control
US5457298A (en) * 1993-07-27 1995-10-10 Tulip Memory Systems, Inc. Coldwall hollow-cathode plasma device for support of gas discharges
US5451259A (en) * 1994-02-17 1995-09-19 Krogh; Ole D. ECR plasma source for remote processing
US5869802A (en) * 1995-12-21 1999-02-09 Plasmaquest, Inc. Plasma producing structure
TW303480B (en) 1996-01-24 1997-04-21 Applied Materials Inc Magnetically confined plasma reactor for processing a semiconductor wafer
US6048435A (en) * 1996-07-03 2000-04-11 Tegal Corporation Plasma etch reactor and method for emerging films
US6500314B1 (en) * 1996-07-03 2002-12-31 Tegal Corporation Plasma etch reactor and method
US6165375A (en) * 1997-09-23 2000-12-26 Cypress Semiconductor Corporation Plasma etching method
US6163006A (en) * 1998-02-06 2000-12-19 Astex-Plasmaquest, Inc. Permanent magnet ECR plasma source with magnetic field optimization
US20020069970A1 (en) * 2000-03-07 2002-06-13 Applied Materials, Inc. Temperature controlled semiconductor processing chamber liner
US6652763B1 (en) * 2000-04-03 2003-11-25 Hrl Laboratories, Llc Method and apparatus for large-scale diamond polishing
US6863835B1 (en) 2000-04-25 2005-03-08 James D. Carducci Magnetic barrier for plasma in chamber exhaust
US6664740B2 (en) 2001-02-01 2003-12-16 The Regents Of The University Of California Formation of a field reversed configuration for magnetic and electrostatic confinement of plasma
US6611106B2 (en) * 2001-03-19 2003-08-26 The Regents Of The University Of California Controlled fusion in a field reversed configuration and direct energy conversion
US6602381B1 (en) 2001-04-30 2003-08-05 Lam Research Corporation Plasma confinement by use of preferred RF return path
US7632375B2 (en) * 2004-12-30 2009-12-15 Lam Research Corporation Electrically enhancing the confinement of plasma
US9123512B2 (en) 2005-03-07 2015-09-01 The Regents Of The Unviersity Of California RF current drive for plasma electric generation system
US9607719B2 (en) 2005-03-07 2017-03-28 The Regents Of The University Of California Vacuum chamber for plasma electric generation system
US8031824B2 (en) * 2005-03-07 2011-10-04 Regents Of The University Of California Inductive plasma source for plasma electric generation system
US8444926B2 (en) * 2007-01-30 2013-05-21 Applied Materials, Inc. Processing chamber with heated chamber liner
CN101728224B (zh) * 2008-10-10 2012-05-23 鼎岳科技股份有限公司 利用于半导体的制造设备以及制造方法
MX345403B (es) 2009-05-13 2017-01-30 Sio2 Medical Products Inc Revestimiento por pecvd utilizando un precursor organosilícico.
US9545360B2 (en) 2009-05-13 2017-01-17 Sio2 Medical Products, Inc. Saccharide protective coating for pharmaceutical package
US9458536B2 (en) 2009-07-02 2016-10-04 Sio2 Medical Products, Inc. PECVD coating methods for capped syringes, cartridges and other articles
US11624115B2 (en) 2010-05-12 2023-04-11 Sio2 Medical Products, Inc. Syringe with PECVD lubrication
US9878101B2 (en) 2010-11-12 2018-01-30 Sio2 Medical Products, Inc. Cyclic olefin polymer vessels and vessel coating methods
US9272095B2 (en) 2011-04-01 2016-03-01 Sio2 Medical Products, Inc. Vessels, contact surfaces, and coating and inspection apparatus and methods
CN103930595A (zh) 2011-11-11 2014-07-16 Sio2医药产品公司 用于药物包装的钝化、pH保护性或润滑性涂层、涂布方法以及设备
US11116695B2 (en) 2011-11-11 2021-09-14 Sio2 Medical Products, Inc. Blood sample collection tube
JP6186367B2 (ja) 2011-11-14 2017-08-23 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 高性能ｆｒｃを形成し維持するシステム
US20150297800A1 (en) 2012-07-03 2015-10-22 Sio2 Medical Products, Inc. SiOx BARRIER FOR PHARMACEUTICAL PACKAGE AND COATING PROCESS
WO2014071061A1 (en) 2012-11-01 2014-05-08 Sio2 Medical Products, Inc. Coating inspection method
US9903782B2 (en) 2012-11-16 2018-02-27 Sio2 Medical Products, Inc. Method and apparatus for detecting rapid barrier coating integrity characteristics
US9764093B2 (en) 2012-11-30 2017-09-19 Sio2 Medical Products, Inc. Controlling the uniformity of PECVD deposition
CA2892294C (en) 2012-11-30 2021-07-27 Sio2 Medical Products, Inc. Controlling the uniformity of pecvd deposition on medical syringes, cartridges, and the like
US20160015898A1 (en) 2013-03-01 2016-01-21 Sio2 Medical Products, Inc. Plasma or cvd pre-treatment for lubricated pharmaceutical package, coating process and apparatus
JP6453841B2 (ja) 2013-03-11 2019-01-16 エスアイオーツー・メディカル・プロダクツ・インコーポレイテッド 被覆包装
US9937099B2 (en) 2013-03-11 2018-04-10 Sio2 Medical Products, Inc. Trilayer coated pharmaceutical packaging with low oxygen transmission rate
US9863042B2 (en) 2013-03-15 2018-01-09 Sio2 Medical Products, Inc. PECVD lubricity vessel coating, coating process and apparatus providing different power levels in two phases
LT3031051T (lt) 2013-09-24 2018-04-10 Tae Technologies, Inc. Būdas aukštų eksploatacinių savybių frc formuoti ir palaikyti
WO2015148471A1 (en) 2014-03-28 2015-10-01 Sio2 Medical Products, Inc. Antistatic coatings for plastic vessels
MY182756A (en) 2014-10-13 2021-02-05 Tri Alpha Energy Inc Systems and methods for merging and compressing compact tori
KR102590200B1 (ko) 2014-10-30 2023-10-16 티에이이 테크놀로지스, 인크. 고성능 frc를 형성하고 유지하는 시스템 및 방법
EP3295459B1 (en) 2015-05-12 2020-10-28 TAE Technologies, Inc. Systems and methods for reducing undesired eddy currents
US11077233B2 (en) 2015-08-18 2021-08-03 Sio2 Medical Products, Inc. Pharmaceutical and other packaging with low oxygen transmission rate
CN115206553A (zh) 2015-11-13 2022-10-18 阿尔法能源技术公司 用于frc等离子体位置稳定性的系统和方法
CN110140182A (zh) 2016-10-28 2019-08-16 阿尔法能源技术公司 用于利用具有可调节束能量的中性束注入器改善支持高性能frc升高的能量的系统和方法
MX2019005262A (es) 2016-11-04 2019-06-24 Tae Tech Inc Sistemas y metodos para un mantenimiento mejorado de una configuracion de campo invertido (frc) de alto rendimiento con bombeo de vacio de tipo captura de escala multiple.
EP3716286B1 (en) 2016-11-15 2025-07-09 TAE Technologies, Inc. Systems for improved sustainment of a high performance frc and high harmonic fast wave electron heating in a high performance frc
CA3167556A1 (en) 2020-01-13 2021-07-22 Tae Technologies, Inc. System and methods for forming and maintaining high energy and temperature frc plasma via spheromak merging and neutral beam injection

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5494282A (en) * 1977-12-30 1979-07-25 Ibm Negative ion extractor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4361472A (en) * 1980-09-15 1982-11-30 Vac-Tec Systems, Inc. Sputtering method and apparatus utilizing improved ion source

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5494282A (en) * 1977-12-30 1979-07-25 Ibm Negative ion extractor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60246599A (ja) * 1983-06-15 1985-12-06 セントル・ナシヨナル・ドウ・ラ・ルシエルシユ・サイエンテイフイツク（セ・エン・エ−ル・エス） 高密度・低電子温度の均質大容積プラズマ発生方法および装置
JPS62172700A (ja) * 1986-01-24 1987-07-29 理化学研究所 プラズマ閉込用磁場発生装置
JPH02235332A (ja) * 1989-01-25 1990-09-18 Internatl Business Mach Corp <Ibm> プラズマ処理装置

Also Published As

Publication number Publication date
US4483737B1 (cg-RX-API-DMAC7.html) 1991-07-30
US4483737A (en) 1984-11-20

Similar Documents

Publication Publication Date Title
JPS59143330A (ja) プラズマエツチング装置
US6250250B1 (en) Multiple-cell source of uniform plasma
US6849857B2 (en) Beam processing apparatus
US7863582B2 (en) Ion-beam source
US5767628A (en) Helicon plasma processing tool utilizing a ferromagnetic induction coil with an internal cooling channel
US5032205A (en) Plasma etching apparatus with surface magnetic fields
KR102478896B1 (ko) 이온-이온 플라즈마 원자 층 에칭 프로세스 및 반응기
US5762814A (en) Plasma processing method and apparatus using plasma produced by microwaves
US5430355A (en) RF induction plasma source for plasma processing
US4277304A (en) Ion source and ion etching process
US7034285B2 (en) Beam source and beam processing apparatus
US6949735B1 (en) Beam source
US4713585A (en) Ion source
US4873445A (en) Source of ions of the triode type with a single high frequency exitation ionization chamber and magnetic confinement of the multipole type
US5686796A (en) Ion implantation helicon plasma source with magnetic dipoles
GB2231197A (en) Plasma apparatus electrode assembly
WO2002078041A2 (en) Neutral particle beam processing apparatus
EP0591975B1 (en) Two parallel plate electrode type dry etching apparatus
JPH10270430A (ja) プラズマ処理装置
US6909086B2 (en) Neutral particle beam processing apparatus
US10790153B2 (en) Methods and apparatus for electron beam etching process
US6858838B2 (en) Neutral particle beam processing apparatus
KR20020004934A (ko) 선형이온빔의 플라즈마소스
US6899527B2 (en) Closed-drift hall effect plasma vacuum pump for process reactors
WO2009048294A2 (en) Magnetized inductively coupled plasma processing apparatus and generating method