JPS59139679A - Semiconductor pressure sensing device - Google Patents
Semiconductor pressure sensing deviceInfo
- Publication number
- JPS59139679A JPS59139679A JP1271983A JP1271983A JPS59139679A JP S59139679 A JPS59139679 A JP S59139679A JP 1271983 A JP1271983 A JP 1271983A JP 1271983 A JP1271983 A JP 1271983A JP S59139679 A JPS59139679 A JP S59139679A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- film
- semiconductor
- face
- sensing device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 19
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 21
- 239000010703 silicon Substances 0.000 claims abstract description 21
- 239000010408 film Substances 0.000 claims abstract description 20
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 10
- 239000010409 thin film Substances 0.000 claims abstract description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 9
- 230000001681 protective effect Effects 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 150000004767 nitrides Chemical class 0.000 claims abstract description 4
- 239000013078 crystal Substances 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 20
- 239000008188 pellet Substances 0.000 abstract description 7
- 238000000034 method Methods 0.000 abstract description 6
- 238000005530 etching Methods 0.000 abstract description 2
- 230000000994 depressogenic effect Effects 0.000 abstract 3
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 230000000415 inactivating effect Effects 0.000 abstract 1
- 238000005121 nitriding Methods 0.000 abstract 1
- 230000005074 turgor pressure Effects 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Pressure Sensors (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は半導体圧力感知装置、特にシリコンダイヤフラ
人形圧カセンサに関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to semiconductor pressure sensing devices, and more particularly to silicon diaphragm pressure sensors.
半導体圧力センサは在来のブルドン管やベローズを用い
た機械式圧力センサと異なりて小形化。Semiconductor pressure sensors are smaller than conventional mechanical pressure sensors that use Bourdon tubes or bellows.
低価格イ１．高性能化が期待でき、その代表的なものに
シリコンダイヤフラム膨圧カセンサがある。Low price 1. A typical example of this is the silicon diaphragm turgor pressure sensor, which is expected to offer improved performance.
シリコンダイヤフラム膨圧カセンサの構造は第１図に示
すように、例えば厚さ２４０μｍ程度のシリコンベレッ
ト１の一生面（（１００）面又は（１１０）而）に深い
凹陥部２を形成して一部が上下の圧力差により敏感に凹
凸変形するような約２０μｍの薄膜とし、この薄膜部３
０表面（凹陥部形成面の反対側の面）にＢ（ホウ素）を
部分的に拡散して４個の拡散抵抗４を感知素子として存
在させたもので、薄膜の凹凸変形による拡散抵抗の伸縮
からブリッジ結合させた抵抗の変化として圧力を検出す
るものである。As shown in FIG. 1, the structure of the silicon diaphragm turgor pressure sensor is as shown in FIG. This thin film part 3 is made of a thin film of approximately 20 μm that is sensitively deformed into unevenness due to the pressure difference between the upper and lower sides.
B (boron) is partially diffused on the 0 surface (the surface opposite to the surface on which the recesses are formed), so that four diffused resistors 4 are present as sensing elements, and the expansion and contraction of the diffused resistors due to the uneven deformation of the thin film The pressure is detected as a change in the resistance bridge-coupled from the
このようなシリコンダイヤフラム膨圧カセンサは、通常
、第１図に示すように、ベレット１の凹陥部の形成され
ている側の面の周辺部をダイ又はパッケージ５にガラス
等の接着剤６を介して固着し、パッケージ等の通孔部７
を通して同図矢印で示すように薄膜面に圧力（Ｐ）がか
かるようにしている。従来より拡散抵抗の形成された薄
膜の上而には電極とともに絶縁膜、例えば５ｉＯｚ（酸
化シリコン）等が保護用被膜８として形成されている（
保護用被膜が形成されない場合もある）が、凹陥部２の
形成されたペレット面はシリコンがそのままに露出され
ていたつ
しかしセンサの用途が多様化するに従Ｉうて異なる種々
の気体や液体が圧力センサのペレット面に接触する状態
で利用されるようになると、シリコンのみではある種の
気体や液体により化合物を発生し、センサの信頼性に問
題が生じることが考えられる。As shown in FIG. 1, such a silicon diaphragm turgor pressure sensor is usually constructed by attaching the peripheral part of the surface of the pellet 1 on which the concave portion is formed to a die or package 5 through an adhesive 6 such as glass. The hole 7 of the package, etc.
Through this, pressure (P) is applied to the thin film surface as shown by the arrow in the figure. Conventionally, an insulating film, such as 5iOz (silicon oxide), etc., is formed as a protective film 8 together with electrodes on the thin film on which the diffused resistance is formed.
However, as the applications of sensors become more diverse, various gases and liquids may be exposed to the pellet surface where the recessed portion 2 is formed. When used in contact with the pellet surface of a pressure sensor, silicon alone may generate compounds with certain gases or liquids, causing problems with the reliability of the sensor.
本発明は上記した問題点を解決するためになされたもの
であり、その目的は、半導体圧力センサの信頼性の向上
にあり、他の目的は多様な用途に適応できる圧力センサ
の提供にある。The present invention has been made to solve the above-mentioned problems, and its purpose is to improve the reliability of a semiconductor pressure sensor, and another purpose is to provide a pressure sensor that can be applied to a variety of uses.
上記目的を達成するための手段として本発明ではダイヤ
フラム形圧力七ンサにおいて、拡散抵抗等の感知素子の
形成されない側の半導体面に半導体窒化物、例えばシリ
コンナイトライド（ｓｉｓＮ４）を保護膜として形成す
ることにより、露出したシリコン面と不活性化したもの
である。As a means for achieving the above object, in the present invention, in a diaphragm type pressure sensor, a semiconductor nitride such as silicon nitride (sisN4) is formed as a protective film on the semiconductor surface on the side where sensing elements such as diffused resistors are not formed. This makes the exposed silicon surface passivated.
第２図に本発明によるシリコンダイヤフラム膨圧カセン
サの一実施例を断面図により示す。FIG. 2 shows a cross-sectional view of an embodiment of the silicon diaphragm turgor pressure sensor according to the present invention.
同図において、第１図で掲げた在来形のシリコンダイヤ
フラム膨圧カセンサと共通する構成部分には共通の指示
番号が付されている。同図で示すように、本発明ではダ
イヤフラム形シリコンペレットの拡散抵抗の設けられて
ないシリコン主面、すなわち凹陥部筒２のシリコン面に
対し不活性化スルためにシリコンナイトライド化を行な
い、例えば厚さ１μｍ又はそれ以下の厚さのシリコンナ
イトライド（Ｓ＋５Ｎ４）膜９を形成して保護膜とする
。In the figure, common reference numbers are given to components common to the conventional silicon diaphragm turgor pressure sensor shown in FIG. As shown in the figure, in the present invention, silicon nitride is applied to the main silicon surface of the diaphragm-shaped silicon pellet on which no diffusion resistance is provided, that is, the silicon surface of the recessed cylinder 2, in order to pass passivation. A silicon nitride (S+5N4) film 9 having a thickness of 1 μm or less is formed as a protective film.
このシリコンナイトライド膜形成にあたってはウェハ状
のＳｉ基板の一主面に異方性エツチング技術等によって
凹陥部２を形成する一方、反対側の薄膜３主面に公知の
選択拡散技術により拡散抵抗４を形成した後、凹陥部側
のＳｉ面（図示されナイカ薄いＳｉｎ、膜を介在させる
）にプラズマ放電技術等を利用しＮ、をＳｉに反応させ
ることによりＳｌ、Ｎ、膜１を生成する。この８１ ｓ
Ｎ４膜は同時に拡散抵抗を形成した面に付着させて最
終保護膜として利用してもよい。In forming this silicon nitride film, a concave portion 2 is formed on one main surface of the wafer-shaped Si substrate by an anisotropic etching technique, while a diffused resistor 4 is formed on the main surface of the thin film 3 on the opposite side by a well-known selective diffusion technique. After forming , N is reacted with Si using a plasma discharge technique or the like on the Si surface on the side of the recess (a thin Si film is interposed as shown in the figure), thereby producing Sl, N, and film 1. This 81s
The N4 film may be simultaneously attached to the surface on which the diffused resistor is formed and used as a final protective film.
このようにしてＳｉ面に形成されたＳ ｔ ｓ Ｎ４膜
は極めて高い不活性を有し、活性な気体や液体と接触し
ても化合物を作り錐く、かつ構造的にち密であるため物
理的強度も大きく保護膜として有ゆである。The S ts N4 film formed on the Si surface in this way has extremely high inertness, and even when it comes into contact with active gases or liquids, it forms compounds and is structurally dense, so it is physically It has great strength and is useful as a protective film.
したがって本発明によれば、圧力センサとしての信頼性
が向上するとともに、多様な用途に適応できるため使用
範囲を大幅に拡大できる。Therefore, according to the present invention, the reliability as a pressure sensor is improved, and the range of use can be greatly expanded because it can be applied to various uses.
本発明は前記実施例に限定されず、これ以外に下記のよ
うに種々の変形例が考えられる。The present invention is not limited to the above-mentioned embodiments, and various modifications can be made as described below.
（１１ペレットの両生面に凹陥部が形成されない場合は
拡散抵抗の設けられない側の面をシリコンナイトライド
化する。(If a concave portion is not formed on the amphiboid surface of the pellet No. 11, the surface on the side where the diffusion resistance is not provided is made into silicon nitride.
（２） 凹陥部側に拡散抵抗が設けられた場合は拡散
抵抗の設けられない他の主面側をシリコンナイトライド
化するー
（３）ダイヤスラム形圧カセンサの基体はシリコン以外
の半導体、例えば化合物半導体を使用する場合も含まれ
る。(2) If a diffused resistor is provided on the recess side, the other main surface side where the diffused resistor is not provided is made of silicon nitride. (3) The base of the diaphragm pressure sensor is made of a semiconductor other than silicon, such as a compound. This also includes cases where semiconductors are used.
（４）ベレットにおいて凹陥部の形成されない他の部分
の反体側主面には各種の回路素子を組み込むことができ
る。(4) Various circuit elements can be incorporated into the opposite main surface of the pellet in the other portion where the recessed portion is not formed.
本発明はダイヤフラム膨圧力センサ一般に適用できる。The present invention can be applied to diaphragm swelling pressure sensors in general.
この圧力センサは自動車部品、家庭電器品、楽器、工業
用製品等各方面に応用できる。This pressure sensor can be applied to various fields such as automobile parts, home appliances, musical instruments, and industrial products.
第１図は在来のシリコンダイヤフラム膨圧カセンサの例
を示す縦断面図である。
第２図は本発明によるシリコンタ゛イヤフラム形圧カセ
ンサの一例を示す縦断面図である。
１・・・シリコン基板、２・・・凹陥部、３・・・薄膜
部、４・・・拡散抵抗、５・・・ダイ又はパッケージ、
６・・・接着剤、７・・・通孔、８・・・絶縁膜、９・
・・シリコンナイトライド膜。FIG. 1 is a longitudinal sectional view showing an example of a conventional silicon diaphragm turgor pressure sensor. FIG. 2 is a longitudinal sectional view showing an example of a silicon diaphragm type pressure sensor according to the present invention. DESCRIPTION OF SYMBOLS 1... Silicon substrate, 2... Recessed part, 3... Thin film part, 4... Diffused resistance, 5... Die or package,
6...Adhesive, 7...Through hole, 8...Insulating film, 9...
...Silicon nitride film.
Claims (1)
、この薄膜の一方の主面に感知素子を設けたダイヤフラ
ム形圧力感知装置において、上記感知装置の設けられな
い側の半導体主面に半導体窒化物を保護膜として形成し
た半導体圧力感知装置。 ２、上記半導体基板はシリコンからなり、半導体窒化物
はＳ ｓ ｓ Ｎ４ （三四シリコン化ナイトライド）
である特許請求の範囲第１項に記載の半導体圧力感知装
置。 ３、上記感知素子を設けられない側の半導体主面は凹陥
部な３打ものである萌許梢求の範囲第１項又は第２項に
記載の半導体圧力感知装置。[Scope of Claims] 1. A diaphragm pressure sensing device in which a recess is formed in a semiconductor crystal substrate to partially form a thin film, and a sensing element is provided on one main surface of the thin film, in which the sensing device is provided. A semiconductor pressure sensing device in which a semiconductor nitride is formed as a protective film on the main surface of the non-semiconductor side. 2. The semiconductor substrate is made of silicon, and the semiconductor nitride is SssN4 (S34 silicon nitride).
A semiconductor pressure sensing device according to claim 1. 3. The semiconductor pressure sensing device according to item 1 or 2, wherein the main surface of the semiconductor on the side where the sensing element is not provided is a recessed portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1271983A JPS59139679A (en) | 1983-01-31 | 1983-01-31 | Semiconductor pressure sensing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1271983A JPS59139679A (en) | 1983-01-31 | 1983-01-31 | Semiconductor pressure sensing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59139679A true JPS59139679A (en) | 1984-08-10 |
Family
ID=11813232
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1271983A Pending JPS59139679A (en) | 1983-01-31 | 1983-01-31 | Semiconductor pressure sensing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59139679A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010038905A (en) * | 2008-07-10 | 2010-02-18 | Denso Corp | Sensor device |
-
1983
- 1983-01-31 JP JP1271983A patent/JPS59139679A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010038905A (en) * | 2008-07-10 | 2010-02-18 | Denso Corp | Sensor device |
| US8006553B2 (en) | 2008-07-10 | 2011-08-30 | Denso Corporation | Semiconductor sensor having heater on insulation film and manufacturing method of the same |
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