JPS6062164A - Manufacture of semiconductor pressure sensor - Google Patents
Manufacture of semiconductor pressure sensorInfo
- Publication number
- JPS6062164A JPS6062164A JP17145783A JP17145783A JPS6062164A JP S6062164 A JPS6062164 A JP S6062164A JP 17145783 A JP17145783 A JP 17145783A JP 17145783 A JP17145783 A JP 17145783A JP S6062164 A JPS6062164 A JP S6062164A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- diaphragm
- thickness
- pressure sensor
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 17
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 238000009792 diffusion process Methods 0.000 claims abstract description 18
- 239000013078 crystal Substances 0.000 claims abstract description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 45
- 239000010703 silicon Substances 0.000 claims description 45
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 43
- 239000012530 fluid Substances 0.000 claims description 5
- 238000005530 etching Methods 0.000 abstract description 15
- 238000000034 method Methods 0.000 abstract description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 6
- 239000007864 aqueous solution Substances 0.000 abstract description 2
- 230000003647 oxidation Effects 0.000 abstract description 2
- 238000007254 oxidation reaction Methods 0.000 abstract description 2
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 239000000243 solution Substances 0.000 description 6
- 239000002253 acid Substances 0.000 description 4
- 229920001296 polysiloxane Polymers 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000003486 chemical etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 150000003376 silicon Chemical class 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Pressure Sensors (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
この発明は、半導体感圧抵抗素子を用いて圧力を検出す
る半導体圧力センサの製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a method for manufacturing a semiconductor pressure sensor that detects pressure using a semiconductor pressure-sensitive resistance element.
一般にシリコンのピエゾ抵抗効果を利用した圧力センサ
は、第１図に示すような構造を有してＬ・る。すなわち
、第１図において、Ｎ形シリコン単結晶基板（以下単に
シリコン基板という）１の中央部に起歪ダイヤフラムと
なる肉薄部（以下シリコンダイヤフラムという）２を形
成する。起歪ダイヤフラムの受圧面３と反対の面４にＰ
形拡散ゲージ抵抗層５を形成する。このＰ形拡散ゲージ
拡散層５は大きな温度依存性があるので、この温度特性
を補償するためフルブリッジ結線され、酸化膜１０を開
口して形成した電極１１に外部とＡｕ細線あるいはＡＩ
細線６によって結線される。Generally, a pressure sensor that utilizes the piezoresistance effect of silicon has a structure as shown in FIG. That is, in FIG. 1, a thin part (hereinafter referred to as a silicon diaphragm) 2 that becomes a strain diaphragm is formed in the center of an N-type silicon single crystal substrate (hereinafter simply referred to as a silicon substrate) 1. P on the surface 4 opposite to the pressure receiving surface 3 of the strain diaphragm.
A diffused gauge resistance layer 5 is formed. Since this P-type diffusion gauge diffusion layer 5 has a large temperature dependence, in order to compensate for this temperature characteristic, a full bridge connection is made, and an electrode 11 formed by opening the oxide film 10 is connected to the outside using a thin Au wire or an AI wire.
The wires are connected by a thin wire 6.
前記のシリコンダイヤフラム２は、通常２００μｍ前後
のシリコン基板１の中央部に形成される。シリコンダイ
ヤフラム２は、第２図に示すようにシリコン基板１を化
学エツチングによりＰ形拡散ゲージ抵抗層５が形成され
る面とは反対の面より堀り込むことＫより形成し、その
厚みは検出圧力の範囲に応じて決定する。例えばＩＫｙ
／ｃｍ”までの流体圧力を検出する場合には、直径２ｍ
１１１φで板厚を４０μｍｌｃするとＩＫｙ／ｃｍ”の
流体圧力では拡散抵抗値変化は約１％となり、ＩＯＶの
直流電圧を印加すると約２００ｍＶの直流出力が得られ
る。The silicon diaphragm 2 is usually formed at the center of the silicon substrate 1 with a thickness of about 200 μm. As shown in FIG. 2, the silicon diaphragm 2 is formed by chemically etching the silicon substrate 1 from the surface opposite to the surface on which the P-type diffusion gauge resistance layer 5 is formed, and its thickness is measured. Determine depending on the pressure range. For example, IKy
2 m diameter when detecting fluid pressure up to
When the plate thickness is 40 μm 111φ and the fluid pressure is IKy/cm”, the diffusion resistance value change is about 1%, and when a DC voltage of IOV is applied, a DC output of about 200 mV is obtained.
このようにして作られた感圧チップは、中央部に圧力導
入孔を有するシリコンあるいはは５けい酸系の耐熱ガラ
ス（例えは、商標名パイレックス：コーニング社）等の
材料で作られた台１に低融点ガラスあるいは金属ろう材
等の接着剤８で接着固定し半導体圧力センサが構成され
る。シリコンタイヤフラム２の受圧面３１Ｃ気体または
液体等の流体圧力９（第１図）が印加されると、シリコ
ンダイヤフラム２に歪みが生じ、この歪みに応じて前記
Ｐ形拡散ゲージ抵抗層５の抵抗値が変化する。The pressure-sensitive chip made in this way is mounted on a stand made of a material such as silicone or penta-silicic acid heat-resistant glass (for example, Pyrex (trade name: Corning Corporation)), which has a pressure introduction hole in the center. A semiconductor pressure sensor is constructed by bonding and fixing the semiconductor pressure sensor to the substrate with an adhesive 8 such as low melting point glass or metal brazing material. When fluid pressure 9 (FIG. 1) such as gas or liquid is applied to the pressure receiving surface 31C of the silicone tire phragm 2, distortion occurs in the silicone diaphragm 2, and the resistance of the P-type diffusion gauge resistance layer 5 increases in accordance with this distortion. The value changes.
この変化をフルブリッジ結線の出方端子から電圧の変化
として読み取り、流体圧力を測定することができる。This change can be read as a change in voltage from the output terminal of the full bridge connection and the fluid pressure can be measured.
さて、以上の説明から分るように、圧力センサの感度を
決定するのはシリコン基板１に形成されたシリコンダイ
ヤフラム２の厚さである。従って、シリコンダイヤフラ
ム２を極めて精度よく加工することが肝要であるが、従
来、このシリコンダイヤフラム２は強酸系のシリコンエ
ツチング液や強アルカリ系のシリコンエツチング液でＰ
形拡散ゲージ抵抗層５とは反対の面から化学的に加工さ
れていた。この際のエツチングマスクとしては、シリコ
ン酸化膜である５ｉ０２膜が用いられる。このシリコン
酸化膜はシリコン基板１に拡散法によりＰ形拡散ゲージ
抵抗層５を形成する際に必然的にできるもので、後工程
でシリコンダイヤフラム２をＰ形拡散ゲージ抵抗層５と
は反対の面から堀り込む時には工程上非常に好都合であ
る。Now, as can be seen from the above explanation, it is the thickness of the silicon diaphragm 2 formed on the silicon substrate 1 that determines the sensitivity of the pressure sensor. Therefore, it is important to process the silicon diaphragm 2 with extremely high precision. Conventionally, this silicon diaphragm 2 has been etched using a strong acid-based silicon etching solution or a strong alkaline-based silicon etching solution.
It was chemically processed from the side opposite to the shaped diffusion gauge resistance layer 5. A 5i02 film, which is a silicon oxide film, is used as an etching mask at this time. This silicon oxide film is inevitably formed when forming the P-type diffused gauge resistance layer 5 on the silicon substrate 1 by the diffusion method, and in a later process, the silicon diaphragm 2 is attached to the side opposite to the P-type diffused gauge resistance layer 5. It is very convenient for the process when digging from scratch.
しかし、この方法は次の点で難点がある。まず、第２図
に示すように第１にシリコン基板１上に生成し得る熱酸
化膜である５ｉ０２膜２１の厚みは２μｍ程度が最大で
あり、しかもこのＳｉｎ、膜２１はシリコンダイヤフラ
ム２のエツチング加工中に同時にエツチングされ薄くな
り【行くため、堀り込むことができる深さには限界が生
じ、加工可能な深さ２２は１５０μｍが最大である。も
ちろん、８ ｉ ０ を膜２１を再度生成せしめてかか
る作業を継続することも可能であるが、この場合には拡
散により、形成したＰ形拡散ゲージ抵抗層５の不純物プ
ロファイルが変化し抵抗値が初めの設定値と異なるなど
の不都合が生じるので、できる限り１回の作業で形成し
てしまうことが好ましい。従って、例えはシリコンダイ
ヤフラム２の厚みを４０μｍに設定すれは、シリコン恭
板１の拡散投入時点の厚み２３は１９０μｍとしなけれ
ばならない。シリコン基板１０口径は厚さと密接な関係
があり、１９０μｍの厚みでは作業上扱い得るシリコン
基板１０口径は５０φまでである。シリコン半導体の拡
散作業はバッチ作業であるから基板口径が大きけれは大
きい程コスト上有利であるが、以上の理由により半導体
圧力センサの製造に投入できる基板口径に制限があるた
め感圧チップの製作コストが高くなり、これが半導体圧
力センサの普及を妨げる一因となっていた〇
第２に、片面からエツチングにより堀り′込むと加工精
度が悪くなるという事実が挙げられる。これは強酸系の
エツチング液を使った場合にのみ現われ、シリコンの結
晶方向によるエツチング速度の差を利用した強アルカリ
系エツチング液を使った場合には現われない。強酸系の
エツチング液を使うとシリコンタイヤフラムの厚みに第
２図に示すように不均一性が生じる。これはエツチング
によって堀り込む深さが深くなれはなる程顕著に現われ
る現象で、従って、堀り込む深さが深くなるにつれ′Ｃ
ｓ度にバラツキが大きくなり、感圧チップの歩留り低下
の一因となる。また、シリコンダイヤフラム２の端部の
エツジ２４が丸みを帯び、これは堀り込む深さが深くな
る程顕著になる。このことはシリコンダイヤフラム２の
端部の応力が加わった場合、応力が均等に加わらないと
いう望ましくない結果をもたらし、抵抗値変化の直線性
が低下する原因となる。However, this method has the following drawbacks. First, as shown in FIG. 2, the maximum thickness of the 5i02 film 21, which is a thermally oxidized film that can be formed on the silicon substrate 1, is about 2 μm. During machining, the material is etched and thinned at the same time, so there is a limit to the depth to which it can be dug, and the maximum machinable depth 22 is 150 μm. Of course, it is possible to continue this process by regenerating the film 21 using 8 i 0 , but in this case, due to diffusion, the impurity profile of the formed P-type diffused gauge resistance layer 5 changes and the resistance value changes. Since inconveniences such as differences from the initial set values may occur, it is preferable to form the values in one operation as much as possible. Therefore, for example, if the thickness of the silicon diaphragm 2 is set to 40 .mu.m, the thickness 23 of the silicon diaphragm 1 at the time of diffusion injection must be 190 .mu.m. The diameter of the silicon substrate 10 is closely related to the thickness, and when the thickness of the silicon substrate is 190 μm, the diameter of the silicon substrate 10 that can be handled is up to 50φ. Diffusion work for silicon semiconductors is a batch process, so the larger the substrate diameter, the more cost-effective it is.However, for the above reasons, there is a limit to the substrate diameter that can be used in the manufacture of semiconductor pressure sensors, which reduces the production cost of pressure-sensitive chips. This was one of the reasons for preventing the spread of semiconductor pressure sensors.Secondly, there is the fact that etching from one side deteriorates the processing accuracy. This appears only when a strong acid-based etching solution is used, and does not appear when a strong alkaline-based etching solution is used, which takes advantage of the difference in etching speed depending on the crystal orientation of silicon. When a strong acid-based etching solution is used, non-uniformity occurs in the thickness of the silicone tire flam, as shown in Figure 2. This is a phenomenon that becomes more pronounced as the etching depth increases, and therefore, as the etching depth increases, 'C
The dispersion increases with time, which becomes a factor in reducing the yield of pressure-sensitive chips. Furthermore, the edge 24 at the end of the silicon diaphragm 2 is rounded, and this becomes more noticeable as the depth of digging increases. This brings about the undesirable result that when stress is applied to the ends of the silicon diaphragm 2, the stress is not applied evenly, which causes a decrease in the linearity of the change in resistance value.
この発明は、上記の点にかんがみてなされたもので、シ
リコンダイヤフラムの製作が容易にでき、製造工程中の
歩留りが良く、大量処理が可能な半導体圧力センサの製
造方法を提供するものである。The present invention has been made in view of the above points, and provides a method of manufacturing a semiconductor pressure sensor that allows easy manufacture of a silicon diaphragm, high yield during the manufacturing process, and allows mass processing.
第３図（ａ）、（ｂ）はこの発明の一実施例を示す概略
図で、シリコン基板１の起歪ダイヤフラムとなる肉薄部
２は第３図（ａ）のようにして形成する。FIGS. 3(a) and 3(b) are schematic diagrams showing one embodiment of the present invention, and the thin portion 2 of the silicon substrate 1 which becomes the strain diaphragm is formed as shown in FIG. 3(a).
すなわち、まず、厚さ３００〜３５０μｍ結晶方向＜１
００＞のシリコン基板１を熱酸化により酸化し１表面に
約２μｍのＳ’ｉ０２膜３１を膜種１る。That is, first, the thickness is 300 to 350 μm and the crystal direction is <1.
00> silicon substrate 1 is oxidized by thermal oxidation, and an S'i02 film 31 of about 2 μm is formed on the surface of the silicon substrate 1.
次に、ＳｉＯ，膜３１に写真食刻法によりシリコン基板
１０両面の同一位置に角形の開口部を設ける。Next, square openings are formed in the SiO film 31 at the same position on both sides of the silicon substrate 10 by photolithography.
続いてこのシリコン基板１をＫＯＨ水溶液中に投入し、
シリコン基板１０両面よりエツチングし堀り込み孔３２
を形成する。シリコンダイヤフラム２の厚み３３が目的
の厚みになったらエツチングを停止し、良く水洗して酸
化膜である５ｉ０２膜３１を除去する。次いで、第３図
（ｂ）のように新しく酸化膜３４を前記シリコン基板１
に被覆し直し、通常の拡散作業により拡散ゲージ抵抗層
３５を形成する。なお、この場合、通常の写真食刻法で
は堀り込み孔３２の中に拡散ゲージ抵抗層３５を精度良
くパターニングすることはもちろん不可能であり、投影
露光器などの特殊な装置を用いなければならないことは
いうまでもない。拡散ゲージ抵抗層３５はＡＩ電極パッ
ド３６を通じて外部と接続される。Next, this silicon substrate 1 is placed in a KOH aqueous solution,
Holes 32 are etched from both sides of the silicon substrate 10.
form. When the thickness 33 of the silicon diaphragm 2 reaches the desired thickness, the etching is stopped and the 5i02 film 31, which is an oxide film, is removed by thorough washing with water. Next, as shown in FIG. 3(b), a new oxide film 34 is formed on the silicon substrate 1.
Then, a diffusion gauge resistance layer 35 is formed by a conventional diffusion process. In this case, it is of course impossible to precisely pattern the diffusion gauge resistance layer 35 inside the drilled hole 32 using ordinary photolithography, and this cannot be done without using special equipment such as a projection exposure device. Needless to say, it won't happen. The diffusion gauge resistance layer 35 is connected to the outside through an AI electrode pad 36.
なお、上記の実施例は堀り込み孔３２の形成に化学エツ
チング法を用いたが、これ（限らず超音波加工法や、化
学エツチング法と超音波加工法の組み合せでもよい。Although chemical etching was used to form the drill holes 32 in the above embodiments, the present invention is not limited to this, but may also be an ultrasonic processing method or a combination of chemical etching and ultrasonic processing.
以上説明したように、この発明は、Ｎ形シリコン単結晶
基板の両面から堀り込み部を形成して起歪ダイヤフラム
となる肉薄部を形成し、次いで、前記肉薄部の一方の面
ＫＰ形拡散層を形成して外部電極と接続して半導体圧力
センサを楕成するよ５Ｋしたので、エツチングの際の堀
り込み部の掘り込み深さは従来に較べ格段と浅くなり、
かつ、肉薄部の厚みのバラツキが極めて小さくなること
から感度にバラツキのない、かつ、抵抗値変化の直線性
が向上する半導体圧力センナがＩＪＪられる利点がある
。As explained above, in the present invention, trenched portions are formed on both sides of an N-type silicon single crystal substrate to form a thin wall portion that becomes a strain diaphragm, and then one surface of the thin wall portion is KP type diffused. Since we formed a layer and connected it to an external electrode to form an oval semiconductor pressure sensor in 5K, the depth of the trench during etching is much shallower than in the past.
In addition, since the variation in the thickness of the thin portion is extremely small, there is an advantage that the semiconductor pressure sensor can be used as an IJJ, with no variation in sensitivity and improved linearity of resistance change.
第１図は一般的な半導体圧力センサの構造断面図、第２
図は感圧チップを強酸系エツチング液にてエツチング形
成した場合のシリコンダイヤプラムの断面図、第３図（
ａ）、（ｂ）はこの発明の一実施例を示す感圧チップの
工程図である。
図中、１はシリコン基板、２はシリコンダイヤフラム、
３１は５ｔ０２膜、３２は堀り込み孔、３３はシリコン
ダイヤプラムの厚み、３４は酸化膜、３５は拡散ゲージ
抵抗層、３６はＡＩ電極パッドである。
なお、図中の同一符号は同一または相当部分を示す・
代理人 大老僧雄 （外２名）Figure 1 is a structural cross-sectional view of a general semiconductor pressure sensor, Figure 2
The figure shows a cross-sectional view of a silicon diaphragm when a pressure-sensitive chip is etched using a strong acid etching solution.
Figures a) and (b) are process diagrams of a pressure-sensitive chip showing an embodiment of the present invention. In the figure, 1 is a silicon substrate, 2 is a silicon diaphragm,
31 is a 5t02 film, 32 is a drilling hole, 33 is the thickness of a silicon diaphragm, 34 is an oxide film, 35 is a diffusion gauge resistance layer, and 36 is an AI electrode pad. In addition, the same reference numerals in the diagram indicate the same or equivalent parts. Agent: Dairo Soo (2 others)
Claims (1)
し、起歪シリコンダイヤフラムとなる肉薄部の他方の面
より流体圧力を受圧する感圧シリコンチップと、この感
圧シリコンチップを固定するために中央部に圧力導入孔
を有する台とから構成される半導体圧力センサの製造方
法において、前記Ｎ形シリコン単結晶基板の両面から掘
り込み部を形成して起歪ダイヤプラムとなる肉薄部を形
成し１次いで、前記肉薄部の一方の面に前記Ｐ形の拡散
層を形成することを特徴とする半導体圧力センサの製造
方法。A pressure-sensitive silicon chip that has a P-type diffusion layer on one side of an N-type silicon single crystal substrate and receives fluid pressure from the other side of a thin part that becomes a strain-induced silicon diaphragm, and this pressure-sensitive silicon chip. In a method of manufacturing a semiconductor pressure sensor, the semiconductor pressure sensor comprises a base having a pressure introduction hole in the center for fixing the sensor, and a thin-walled semiconductor pressure sensor is formed by forming recesses from both sides of the N-type silicon single crystal substrate to form a strain diaphragm. 1. A method of manufacturing a semiconductor pressure sensor, comprising: forming a thin part, and then forming the P-type diffusion layer on one surface of the thin part.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17145783A JPS6062164A (en) | 1983-09-16 | 1983-09-16 | Manufacture of semiconductor pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17145783A JPS6062164A (en) | 1983-09-16 | 1983-09-16 | Manufacture of semiconductor pressure sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6062164A true JPS6062164A (en) | 1985-04-10 |
Family
ID=15923456
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17145783A Pending JPS6062164A (en) | 1983-09-16 | 1983-09-16 | Manufacture of semiconductor pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6062164A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS638748A (en) * | 1986-06-26 | 1988-01-14 | ゼロツクス コ−ポレ−シヨン | Multi-layer amorphous silicon image forming member |
| EP0389071A2 (en) * | 1989-01-30 | 1990-09-26 | Dresser Industries Inc. | Method for fabricating semiconductor diaphragms |
| JPH02120851U (en) * | 1989-03-15 | 1990-09-28 | ||
| CN104819789A (en) * | 2015-02-10 | 2015-08-05 | 华进半导体封装先导技术研发中心有限公司 | Stress sensor and manufacture method thereof |
| US9186898B2 (en) * | 2007-03-28 | 2015-11-17 | Brother Kogyo Kabushiki Kaisha | Method for producing piezoelectric actuator |
-
1983
- 1983-09-16 JP JP17145783A patent/JPS6062164A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS638748A (en) * | 1986-06-26 | 1988-01-14 | ゼロツクス コ−ポレ−シヨン | Multi-layer amorphous silicon image forming member |
| EP0389071A2 (en) * | 1989-01-30 | 1990-09-26 | Dresser Industries Inc. | Method for fabricating semiconductor diaphragms |
| JPH02120851U (en) * | 1989-03-15 | 1990-09-28 | ||
| US9186898B2 (en) * | 2007-03-28 | 2015-11-17 | Brother Kogyo Kabushiki Kaisha | Method for producing piezoelectric actuator |
| CN104819789A (en) * | 2015-02-10 | 2015-08-05 | 华进半导体封装先导技术研发中心有限公司 | Stress sensor and manufacture method thereof |
| CN104819789B (en) * | 2015-02-10 | 2017-05-24 | 华进半导体封装先导技术研发中心有限公司 | Stress sensor and manufacture method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5178016A (en) | Silicon pressure sensor chip with a shear element on a sculptured diaphragm | |
| JP2560140B2 (en) | Semiconductor device | |
| JPS6197572A (en) | Manufacture of semiconductor acceleration sensor | |
| JP3489309B2 (en) | Method for manufacturing semiconductor dynamic quantity sensor and anisotropic etching mask | |
| JPS6062164A (en) | Manufacture of semiconductor pressure sensor | |
| US4881056A (en) | Facedown-type semiconductor pressure sensor with spacer | |
| JP3191770B2 (en) | Semiconductor acceleration sensor and method of manufacturing the same | |
| US6308575B1 (en) | Manufacturing method for the miniaturization of silicon bulk-machined pressure sensors | |
| JP3105680B2 (en) | Semiconductor differential pressure sensor and differential pressure transmitter using the same | |
| JP2864700B2 (en) | Semiconductor pressure sensor and method of manufacturing the same | |
| JP2905902B2 (en) | Semiconductor pressure gauge and method of manufacturing the same | |
| JPS6097676A (en) | Semiconductor pressure sensor and manufacture thereof | |
| JP3018594B2 (en) | Method for manufacturing electrode of semiconductor element for high temperature | |
| JP2512220B2 (en) | Multi-function sensor | |
| JPH02148768A (en) | Glass package small-sized pressure sensor | |
| JPH0231470A (en) | Manufacture of semiconductor pressure converter | |
| JPS5828754B2 (en) | Pressure-electric conversion device | |
| JPH0821774A (en) | Semiconductor pressure sensor and its manufacture | |
| JPH0536993A (en) | Semiconductor pressure detector | |
| JPH04181136A (en) | Pressure detector and its manufacture | |
| JPS635232A (en) | Pressure detector | |
| JPH05251715A (en) | Semiconductor pressure sensor and its manufacture | |
| JPH06232422A (en) | Electronic apparatus having transducer whose major part is composed of polycrystalline semiconductor | |
| JP2680471B2 (en) | Semiconductor pressure sensor and method of manufacturing the same | |
| JPH0533018Y2 (en) |