JP3191770B2 - Semiconductor acceleration sensor and method of manufacturing the same - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

TECHNICAL FIELD The present invention relates to an automobile, an aircraft,
The present invention relates to a semiconductor acceleration sensor used for home electric appliances and the like and a method for manufacturing the same, and more particularly to a three-axis acceleration sensor having sensitivity in the x-axis, y-axis, and z-axis.

[0002]

2. Description of the Related Art In general, a cantilever type and a doubly supported type have been proposed as acceleration sensors. As a detection method, there are a method of detecting mechanical strain as a change in electric resistance and a method of detecting a change in capacitance. For example, Japanese Patent Application Laid-Open No. 6-109755 discloses a doubly-supported acceleration sensor that detects mechanical strain as a change in electric resistance.
100782.

FIG. 26 is a schematic sectional view showing a manufacturing process of a conventional semiconductor acceleration sensor, and FIG. 27 is a schematic plan view showing a state of the conventional semiconductor acceleration sensor as viewed from above. First, an n-type single-crystal silicon substrate 1
A silicon oxide film 12 is formed on the substrate 1 by thermal oxidation or the like, and an opening 12a is formed by etching the silicon oxide film 12 using a photoresist (not shown) patterned in a predetermined shape as a mask. The photoresist is removed by plasma ashing or the like. At this time, the opening 12a is formed at a location surrounding the substantially square central portion 11a of the single crystal silicon substrate 11.

Subsequently, a p + type buried sacrificial layer 6a is formed by ion-implanting and annealing a p-type impurity such as boron (B) using the silicon oxide film 12 having the opening 12a formed therein as a mask. Then, the silicon oxide film 12 is removed by etching (FIG. 27A).

[0005] Next, an n-type epitaxial layer 13 is formed on the surface of the single-crystal silicon substrate 11 on which the p + -type buried sacrificial layer 6 a is formed, and as shown in FIG. Using a photoresist (not shown) as a mask, a p-type impurity such as boron (B) is ion-implanted and annealed in a rectangular shape substantially opposing the portion 2b with the vicinity of the central portion 2a missing. By performing p +
A p + type impurity layer 31 reaching the mold embedded sacrificial layer 6a is formed, and the photoresist is removed (FIG. 26B). Here, the epitaxial layer 13 is formed to have a thickness that bends when an acceleration is applied, because the epitaxial layer 13 later becomes the bent portion 2.

Next, a p-type impurity such as boron (B) is diffused at a position corresponding to the bent portion 2 of the epitaxial layer 13 to form a piezo resistor 7 (FIG. 26C). A diffusion wiring 14 is formed by diffusing a p-type impurity such as boron (B) into the epitaxial layer 13 so as to be electrically connected.
Is formed (FIG. 26D).

Next, a protection film 16 such as a silicon nitride film is formed by a CVD method or the like on a surface of the single crystal silicon substrate 11 different from the surface on which the epitaxial layer 13 is formed and on a surface of the epitaxial layer 13 on which the piezoresistor 7 is formed. By etching the protective film 16 formed on the single crystal silicon substrate 11 using a photoresist (not shown) patterned in a shape as a mask, a portion corresponding to an outer peripheral edge of the weight portion 3 described later is formed. An opening 17 is formed, and the photoresist is removed (FIG. 26E).

Next, the protective film 16 in which the opening 17 is formed
Is formed on the single-crystal silicon substrate 11 by using an alkaline etchant such as a potassium hydroxide (KOH) solution to form the cut portion 5 reaching the p + type buried sacrificial layer 6a. (Fig. 26
(F)).

Next, the protective film 16 at a desired position on the diffusion wiring 14 is removed by etching, and a metal wiring 8 is formed by sputtering, etching or the like so as to be electrically connected to the diffusion wiring 14. 26 (g)).

Finally, an etchant made of an acidic solution containing hydrofluoric acid or the like is introduced into the cut portion 5, and the p + type buried sacrificial layer 6a and the p + type impurity layer 31 are removed by isotropic etching to form the cut groove 6. And the weight 3, the support member 4, and the neck 3 a of the weight 3
a, a flexible portion 2 having both ends connected to the frame 1
To form Then, the slit 19 that partially divides the bending portion 2 so that the bending of the bending portion 2 is concentrated is formed by RIE (Reacti).
ve Ion Etching) and the like, and the beam 2b is formed in the bent portion 2 (FIG. 26 (h)).

In the semiconductor acceleration sensor, when an acceleration is applied to the weight 3, the weight 3 is displaced in a direction opposite to the direction in which the acceleration is applied, and the flexure 2 flexes, and is formed on one surface of the flexure 2. The piezoresistor 7 is bent, and the resistance value of the piezoresistor 7 changes. The change in the resistance value is converted into an electric signal to detect the acceleration.

[0012]

However, in the manufacturing process of the semiconductor acceleration sensor as described above, when the p + type buried sacrificial layer 6a is etched, the aspect ratio of about 1 mm in depth and 5 to 10 μm in gap is 200. Since the above-described closed space is etched in the longitudinal direction of the bending portion 2, there is a problem that convection of the etchant hardly occurs and the etching does not progress.

The etchant staying in the closed space is
There is a problem that the selectivity is deteriorated due to the composition change due to the nitric acid self-catalysis, and even the bent portion 2 which largely affects the sensitivity of the semiconductor acceleration sensor is etched, and desired characteristics cannot be obtained.

The present invention has been made in view of the above points, and an object of the present invention is to provide a semiconductor acceleration sensor capable of forming a bent portion with high accuracy and a method of manufacturing the same. .

[0015]

According to the first aspect of the present invention,
A frame having an upper surface and a lower surface, a flexure having a plurality of beams and a center, wherein the beams extend between at least a portion of an inner edge of the frame and the center. A bending portion in which the beam portion and the central portion are integrally connected; a weight portion suspended and supported by the central portion; and a lower surface side of the frame, the inner side surface being a side surface of the weight portion. And a support member facing each other across the notch portion, a notch groove formed between the weight portion and the beam portion, and an acceleration detecting portion that detects distortion by converting distortion generated in the bending portion into an electric signal and detecting acceleration. A semiconductor acceleration sensor in which the cut portion and the cut groove communicate with each other, wherein the weight portion and the support member are configured using a semiconductor substrate, and the bending portion and the frame are the Provided on semiconductor substrate Is constructed using an epitaxial layer, wherein the cut groove is formed by removing the sacrificial layer, the sacrificial layer, of said epitaxial layer, small
At locations <br/> adjacent in a longitudinal direction of the beam portion of Kutomo the deflection unit to the etchant introduction opening reaching the sacrificial layer provided was so removed by introducing an etchant from the etchant inlet It is characterized by the following.

According to a second aspect of the present invention, in the semiconductor acceleration sensor according to the first aspect, the acceleration detecting section includes:
The present invention is characterized in that acceleration is detected by using a piezoresistor whose resistance value changes by bending and converting a change in the resistance value of the piezoresistor into an electric signal.

According to a third aspect of the present invention, in the semiconductor acceleration sensor according to the first aspect, the acceleration detecting section includes:
An electrode is disposed substantially opposed to the first electrode, and the acceleration is detected by detecting the deflection of the bending portion and / or the weight portion during acceleration application as a change in capacitance by the electrode. is there.

According to a fourth aspect of the present invention, in the semiconductor acceleration sensor according to any one of the first to third aspects,
A high-concentration impurity layer is used as the sacrificial layer.

According to a fifth aspect of the present invention, in the semiconductor acceleration sensor according to any one of the first to third aspects,
A porous silicon layer is used as the sacrificial layer.

According to a sixth aspect of the present invention, in the semiconductor acceleration sensor according to any one of the first to fifth aspects,
The etchant introduction port is provided in the beam part of the bending part.

According to a seventh aspect of the present invention, in the semiconductor acceleration sensor according to the sixth aspect, the shape as viewed from the surface of the etchant inlet formed in the beam portion of the bending portion is:
The present invention is characterized in that four corners of a circle, an ellipse or a rectangle are rounded.

According to an eighth aspect of the present invention, in the semiconductor acceleration sensor according to the seventh aspect, the etchant inlet is provided over the entire length of the bending portion in the longitudinal direction of the beam portion. is there.

According to a ninth aspect of the present invention, in the semiconductor acceleration sensor according to any one of the first to fifth aspects,
The etchant introduction port is provided in a portion of the epitaxial layer excluding the bending portion and a frame forming portion.

According to a tenth aspect of the present invention, there is provided a semiconductor substrate comprising: forming a sacrificial layer at a predetermined position on one surface of a semiconductor substrate; forming an epitaxial layer on a surface of the semiconductor substrate on which the sacrificial layer is formed; A step of forming an acceleration detecting section for detecting acceleration by converting strain into an electric signal on the side of the substrate on which the epitaxial layer is formed, and a portion corresponding to an outer peripheral edge of a weight portion of the semiconductor substrate; A step of forming a cut portion reaching the sacrificial layer by anisotropic etching from a side different from the epitaxial layer forming surface, a step of forming a cut groove by etching away the sacrificial layer, Forming a bending portion for suspending and supporting the weight portion and a frame for supporting the bending portion by removing a desired portion by etching. In the method of manufacturing, said of the epitaxial layer, longitudinal of the beam portion of at least the flexible portion
A location adjacent to the direction, is characterized in that it has added a step of forming an etchant introduction opening reaching said sacrificial layer, and removing the sacrificial layer by introducing an etchant from the etchant inlet .

According to an eleventh aspect of the present invention, in the method for manufacturing a semiconductor acceleration sensor according to the tenth aspect, as the acceleration detecting portion, a resistance value is changed by bending at a position corresponding to the bent portion of the epitaxial layer. A piezo resistor is formed, and acceleration is detected by converting a change in the resistance value of the piezo resistor into an electric signal.

According to a twelfth aspect of the present invention, in the method for manufacturing a semiconductor acceleration sensor according to the tenth aspect, an electrode which is substantially opposed to the electrode is formed as the acceleration detecting portion, and the bent portion and / or the acceleration detecting portion is applied. The acceleration is detected by detecting the deflection of the weight portion as a change in capacitance by the electrode.

According to a thirteenth aspect of the present invention, in the method for manufacturing a semiconductor acceleration sensor according to any one of the tenth to twelfth aspects, a high-concentration impurity layer is formed as the sacrificial layer by impurity diffusion. It is assumed that.

According to a fourteenth aspect of the present invention, in the method for manufacturing a semiconductor acceleration sensor according to any one of the tenth to twelfth aspects, a high-concentration impurity layer is formed as the sacrificial layer by impurity diffusion. The high-concentration impurity layer is made porous by a method to form a porous silicon layer.

According to a fifteenth aspect of the present invention, in the method of manufacturing a semiconductor acceleration sensor according to any one of the tenth to fourteenth aspects, the etchant inlet is formed in the beam portion of the bending portion. It is characterized by having done.

According to a sixteenth aspect of the present invention, in the method for manufacturing a semiconductor acceleration sensor according to the fifteenth aspect, the shape as viewed from the surface of the etchant inlet formed in the bending portion is elliptical or rectangular at four corners. And formed over the entire length of the beam portion of the bending portion in the longitudinal direction.

According to a seventeenth aspect of the present invention, in the method for manufacturing a semiconductor acceleration sensor according to any one of the tenth to fourteenth aspects, the etchant inlet is formed by forming the bent portion and the frame in the epitaxial layer. It is characterized in that it is formed at a location excluding the location.

According to an eighteenth aspect of the present invention, in the method for manufacturing a semiconductor acceleration sensor according to any one of the tenth to seventeenth aspects, the width of the etchant introduction port is set in consideration of anisotropic etching characteristics. It is designed to stop automatically at the point where it reaches the sacrificial layer, and the etchant introduction port is formed by anisotropic etching.

According to a nineteenth aspect of the present invention, in the method of manufacturing a semiconductor acceleration sensor according to any one of the tenth to eighteenth aspects, when the cut portion is formed by anisotropic etching, the etchant is simultaneously introduced. The mouth is formed by anisotropic etching.

According to a twentieth aspect of the present invention, in the method of manufacturing a semiconductor acceleration sensor according to any one of the tenth to seventeenth aspects, the etchant inlet is formed by RIE. Things.

[0035]

Embodiments of the present invention will be described below with reference to the drawings.

Embodiment 1 FIG. 1 is a schematic perspective view showing a semiconductor acceleration sensor according to an embodiment of the present invention in a partially broken state. The semiconductor acceleration sensor according to the present embodiment is formed by processing a semiconductor substrate, and has a frame-like frame 1 having an upper surface side and a lower surface side, a central portion 2a and a beam portion 2b, and a beam portion. 2b extends between at least a portion of the inner peripheral side surface of the frame 1 and the central portion 2a, and includes the beam portion 2b and the central portion 2a.
And a weight portion 3 which is swingably supported by a central portion 2a via a neck portion 3a.
And a support member that supports the lower surface side of the frame and surrounds an outer peripheral edge of the weight portion through a notch portion. Here, a cut groove 6 is formed between the weight portion 3 and the beam portion 2b, and the cut groove 6 is configured to communicate with the cut portion 5.

A plurality of piezoresistors 7 are formed in the vicinity of the central portion 2a of the bending portion 2 and at four base ends, respectively. These piezoresistors 7 are for detecting acceleration as an electrical output, and the piezoresistors 7 are respectively bridge-connected. Diffusion wiring (not shown) is formed so as to be electrically connected to piezoresistor 7, and metal wiring 8 is formed so as to be electrically connected to the diffusion wiring.
Are formed. Then, a voltage is applied to the bridge of each piezoresistor 7 from an external power supply, and the bridges are balanced when no acceleration is applied at all.

When the acceleration is applied, the weight 3
Swings and the bending portion 2 bends. As a result, a strain is generated in the bending portion due to the stress corresponding to the applied acceleration, and the resistance value of the piezoresistor 7 changes in accordance with the strain, so that the bridge formed by the piezoresistor 7 loses its balance. The voltage output corresponding to the acceleration is obtained from the bridge.

A recess 9a is formed at a position corresponding to the weight 3.
Is formed on the supporting member 4 by anodic bonding or the like.

Here, in the present embodiment, as shown in FIG. 1, the bending portion 2 on the side of the weight 3 on which the bending portion 2 is formed is formed.
And an etchant inlet 10 at a location other than the frame 1
Are formed.

The manufacturing process of the semiconductor acceleration sensor according to the present embodiment will be described below with reference to the drawings. FIG. 2 is a schematic cross-sectional view illustrating a manufacturing process of the semiconductor acceleration sensor according to the present embodiment, and FIG.
FIG. 4 is a schematic perspective view showing a partially broken state of the manufacturing process of (h), FIG. 4 is a schematic plan view showing a state viewed from the top of the semiconductor acceleration sensor according to the present embodiment, and FIG.
Is a schematic cross-sectional view of the semiconductor acceleration sensor of the above figure,
(A) is a schematic sectional view before removal of the p + type buried sacrificial layer 6a in AA ', and (b) is a schematic sectional view before removal of the p + type buried sacrificial layer 6a in BB'. (C) is a schematic cross-sectional view after removing the p + type buried sacrificial layer 6a at AA ′;
(D) is a schematic cross-sectional view after removing the p + type buried sacrificial layer 6a at BB '.

In the semiconductor acceleration sensor according to the present embodiment, a silicon oxide film 12 is formed on one main surface of an n-type single crystal silicon substrate 11 having a thickness of 400 to 600 μm, which is a semiconductor substrate, by thermal oxidation or the like. An opening 12a is formed by etching the silicon oxide film 12 using a photoresist (not shown) patterned in a predetermined shape as a mask, and the photoresist is removed by plasma ashing or the like. At this time, the opening 12a is formed at a location surrounding the substantially square central portion 11a of the single crystal silicon substrate 11. The shape of the central portion 11a is not particularly limited, and may be, for example, a circle, an ellipse, or a rectangle (rectangle, square).

Subsequently, by using the silicon oxide film 12 in which the opening 12a is formed as a mask, deposition and thermal diffusion or ion implantation and annealing of a p-type impurity such as boron (B) are performed, thereby forming a sacrificial layer (or A p + -type buried sacrificial layer 6a (a high concentration impurity layer) is formed (FIG. 2).
(A), the silicon oxide film 12 is removed by etching.

In this embodiment, the p + type buried sacrificial layer 6a is formed using the silicon oxide film 12 as a mask, but a silicon nitride film may be used as a mask.

In the present embodiment, the p + type buried sacrificial layer 6a is formed on the single crystal silicon substrate 11, but an n type impurity such as phosphorus (P) is deposited and thermally diffused or ion implanted. Alternatively, the n + type buried sacrificial layer may be formed by performing an annealing process.

Further, the p + type buried sacrificial layer 6a is
It may extend from the entire outer edge of 1a to completely surround that portion, or may extend from a portion of the outer edge. When extending from the whole, the p + type buried sacrificial layer 6a
May have an annular shape. For example, the central portion 11a is circular, and the p + type buried sacrificial layer 6a is an annular portion between a concentric circle formed by a concentric circle and the central portion 11a, or a central portion. 11a is an inner square, and the p + type buried sacrificial layer 6a is formed by an outer square concentric with and in the same direction as the sacrificial layer 6a, and may be an annular portion between the inner square and the outer square. Further, the p + -type buried sacrificial layer 6a may be a portion formed by a portion between the circular central portion 11a and the outer square or a portion formed by a combination thereof in reverse.
A rectangle may be used instead of a square, and an ellipse may be used instead of a circle.

Further, the p + type buried sacrificial layer 6a is
When extending from a portion of the outer edge of 1a, the p + -type buried sacrificial layer 6a has an equal angle (eg, 90 degrees) around the central portion 11a.
Ii) may be substantially long layers separated by a distance of 9);
In the case of 0 °, the p + type buried sacrificial layer 6a has four beam forms facing each other at the central portion 11a (that is, the central portion 1a).
1a). In other words, p +
The mold embedding sacrificial layer 6a may extend radially from the central portion 11a, and the number thereof is not limited.

Next, an n-type epitaxial layer 13 is formed on one main surface of the single-crystal silicon substrate 11 with a thickness corresponding to the bent portion 2 which bends when an acceleration is applied (FIG. 2B). Patterned photoresist (not shown)
Is used as a mask to deposit a p-type impurity such as boron (B) and thermal diffusion or ion implantation and annealing at a position corresponding to a later-described bent portion 2 of the epitaxial layer 13 to thereby obtain a piezoresistor 7 and a piezoresistor. The diffusion wiring 14 is formed so as to be electrically connected to the photoresist 7, and the photoresist is removed (FIGS. 2C and 3A).

A silicon oxide film 15 is formed on the epitaxial layer 13 and on the two main surfaces of the single crystal silicon substrate 11.
Is formed, and a protective film 16 such as a silicon nitride film is formed on the silicon oxide film 15 (FIG. 2D).

Next, the silicon oxide film 15 / protective film 16 formed on the two main surfaces of the single crystal silicon substrate 11 is etched using a resist mask patterned into a predetermined shape, so that the weight 3 An opening 17 is formed at a position corresponding to the outer peripheral edge, and the resist mask is removed (FIG. 2E).

Next, using the silicon oxide film 15 / protective film 16 in which the opening 17 is formed as a mask, a single crystal silicon substrate 11 is formed using an alkaline etchant such as a KOH solution.
By performing anisotropic etching, a cut portion 5 reaching the p + type buried sacrificial layer 6a is formed (FIG. 2F,
FIG. 3 (b).

Next, a contact hole (not shown) is formed by removing the silicon oxide film 15 / protective film 16 at a desired position on the diffusion wiring 14 by etching, and the contact hole is buried. Piezo resistance 7
A metal wiring 8 of aluminum (Al) or the like is formed so as to be electrically connected to the substrate, and the silicon oxide film 15 / protective film 16 on the single crystal silicon substrate 11 are removed by etching (FIG. 2 (g), FIG. 3 (c)).

Next, a lower stopper 9 having a concave portion 9a at a position corresponding to the weight portion 3 is bonded to the two main surfaces of the single-crystal silicon substrate 11 by anodic bonding or the like, and the frame 1 and the flexure of the epitaxial layer 13 are formed. Reactive ion etching (RIE: Reactive Ion Et
ching), anisotropic etching or isotropic etching to form an etchant inlet 10 (FIG. 3).
(D)).

Next, an etchant (50% hydrofluoric acid aqueous solution: 69% nitric acid aqueous solution: acetic acid = 1: 1 to 3: 8 by volume) composed of an acidic solution containing hydrofluoric acid or the like is introduced from the etchant inlet 10. , The p + -type buried sacrificial layer 6 a is removed by isotropic etching to form a cut groove 6, which has a frame-like frame 1 having an upper surface side and a lower surface side, a central portion 2 a and a beam portion 2 b, The beam portion 2b extends between at least a part of the inner peripheral side surface of the frame 1 and the central portion 2a, and has a bent portion 2 in which the beam portion 2b and the central portion 2a are integrally connected, and a neck portion at the central portion 2a. Weight part 3 suspended and supported via 3a
And a support member 4 that supports the lower surface side of the frame 1 and surrounds the outer peripheral edge of the weight 3 via the cutout 5 (FIGS. 2H and 3E).

Finally, an upper stopper (not shown) having a concave portion at a position corresponding to the weight portion 3 is bonded to the two main surfaces of the single crystal silicon substrate 11 by anodic bonding or the like. At this time, the upper stopper (not shown) is bonded to the single crystal silicon substrate 11 via the metal wiring 8.

Therefore, in this embodiment, FIG.
As shown in FIG. 5, the portions of the epitaxial layer 13 other than the frame 1 and the bent portion 2 are removed by etching to form the etchant inlet 10. Can be done
As a result, there is no influence of the liquid composition fluctuation due to the autocatalytic decomposition reaction of nitric acid in a locally closed space, and the p + -type buried sacrificial layer 6a and the epitaxial layer 13 are accurately bent without deteriorating the selectivity. The part 2 can be formed.

Further, conventionally, etching had to be performed in the longitudinal direction 18 of the beam 2b. In the present embodiment, etching can be performed from a direction perpendicular to the longitudinal direction 18 of the beam 2b. Can be shortened.

If the etchant inlet 10 is formed at the same time when the cut 5 is formed by anisotropic etching, the etchant inlet 10 can be formed without increasing the number of steps.

If the width of the etchant inlet 10 is designed to automatically stop etching at the point where the etching reaches the p + type buried sacrificial layer 6a in consideration of the anisotropic etching characteristics, the etching proceeds too much. This can prevent the weight portion 3 from being etched, thereby reducing the sensitivity.

In this embodiment, n-type is used as the conductivity type of single crystal silicon substrate 11 and epitaxial layer 13, and p-type is used as the conductivity type of impurity diffusion for forming piezoresistor 7 and diffusion wiring 14. Although used, it is not limited to this, and an opposite conductivity type may be used.

Further, in the present embodiment, the etchant inlet 10 is formed in a portion of the epitaxial layer 13 excluding the portion serving as the frame 1 and the bending portion 2, but the present invention is not limited to this. Hereinafter, different embodiments will be described.

FIGS. 6 to 16 are schematic plan views showing a semiconductor acceleration sensor according to another embodiment of the present invention as viewed from above. In FIG. 6, the corner portion of the shape as viewed from above the etchant inlet 10 shown in FIG. 4 is rounded, thereby improving the mechanical strength against stress concentration at the end of the beam 2b. be able to.

FIG. 7 shows the etchant inlet 1 shown in FIG.
0 is formed at a location adjacent to the beam 2b,
As a result, only the p + -type buried sacrificial layer 6a in the lower part of the beam portion 2b and the vicinity thereof is removed by etching, so that the weight 3 increases the sensitivity by increasing the weight. FIG.
In the case of (1), it is necessary to form a slit in the epitaxial layer 13 by RIE or the like so that the flexible portion 2 and the weight portion 3 have flexibility.

FIG. 8 shows the etchant inlet 1 shown in FIG.
0 is formed at a position adjacent to the beam portion 2b, whereby only the p + type buried sacrificial layer 6a in the lower portion of the beam portion 2b and in the vicinity thereof is removed by etching.
High sensitivity can be achieved by increasing the weight of the weight portion 3. Also,
Since the beam portion 2b is partially connected to the epitaxial layer 13, the bending portion 2 may be bent due to the viscosity of the resist when the wafer is rotated at a high speed to apply the resist, or the like.
It can be prevented from being broken and has excellent mechanical strength in handling surface (workability). In the case shown in FIG. 8, it is necessary to form a slit in the epitaxial layer 13 by RIE or the like so that the flexible portion 2 and the weight portion 3 have flexibility. Further, in FIG. 8, a plurality of rectangular etchant inlets 10 are formed, but the present invention is not limited to this. For example, an elliptical etchant inlet may be used.

FIGS. 9 to 12 correspond to FIGS. 4 and 7 to 9 respectively.
, The etchant inlet 10a is further provided in the beam 2b.
Is formed, whereby the p + type buried sacrificial layer 6 is formed.
"a" is etched from the side and the center of the beam 2b, and the etching time can be shortened. The shape of the etchant inlet 10a as viewed from above may be any shape such as a circle, an ellipse, a rectangle, or a shape in which four corners of a rectangle are rounded. Considering concentration, it is desirable that the four corners of a circle, an ellipse, and a rectangle are rounded. Further, a plurality of the etchant introduction ports 10a may be formed on a center line parallel to the longitudinal direction of the beam 2b.

FIGS. 13 to 16 show a structure in which an etchant inlet 10b is further formed in the beam 2b in the longitudinal direction of the beam 2b in FIGS. 4 and 7 to 9, thereby forming a p + type embedding. The sacrificial layer 6a is etched from the side and the center of the beam 2b, so that the etching time can be reduced. The etchant inlet 10b
The shape as viewed from above may be any shape such as an elliptical shape, a rectangular shape, or a shape in which the four corners of the rectangle are rounded. However, considering the stress concentration at the etchant inlet 10b, the elliptical shape, It is desirable that the four corners of the rectangle be rounded.

Here, in all the above embodiments,
FIGS. 6 to 12 show, as shown in FIGS. 1 and 3, the bending portion 2 and the supporting portion 3 of the epitaxial layer 13.
Is removed by etching. For example, in the case shown in FIGS. 7, 8, 11 and 12, as shown in FIG. 17, the beam 2b in the epitaxial layer 13 is used. Alternatively, the slit 19 may be formed by etching only the portion adjacent to the support portion 3, and in this case, the sensitivity can be improved by increasing the weight of the weight portion 3. However, FIGS. 9 to 12 show a configuration in which an etchant inlet 10b is further formed in the beam 2b in FIG.

In the case shown in FIGS. 9 to 16, FIG.
As shown in FIG. 8, of the epitaxial layer 13, the bent portion 2
11 and 12, but in the case shown in FIGS. 11, 12, 15, and 16, the beam 2b and the support 3 in the epitaxial layer 13.
The slit 19 may be formed by etching only a portion adjacent to the slit 3. In this case, the weight of the weight 3 can be increased to improve the sensitivity.

Embodiment 2 = FIG. 19 is a schematic perspective view showing a partially broken state of a semiconductor acceleration sensor according to another embodiment of the present invention, and FIG. 20 shows a semiconductor acceleration sensor according to the present embodiment. FIG. 21 is a schematic plan view showing a state of the semiconductor acceleration sensor as viewed from above, and FIG. 21 is a diagram illustrating a semiconductor acceleration sensor according to the present embodiment taken along line AA ′ of FIG.
FIG. 22 is a schematic cross-sectional view showing a manufacturing process of the semiconductor acceleration sensor according to the present embodiment.
FIG. 23 is a schematic cross-sectional view showing a manufacturing process of the semiconductor acceleration sensor according to the present embodiment.
It is a schematic sectional drawing which shows the manufacturing process in FIG.

First, a silicon oxide film 12 is formed on one main surface of the single crystal silicon substrate 11 by thermal oxidation or the like, and the silicon oxide film 12 is etched to form a substantially square center of the single crystal silicon substrate 11. A substantially elongated opening 12a extends outwardly from the outer edge of portion 11a and is spaced at equal angles (90 °). The opening 12a may be formed at a location surrounding the center 11a.

Subsequently, using the silicon oxide film 12 in which the opening 12a is formed as a mask, a p-type impurity such as boron (B) is deposited and subjected to thermal diffusion or ion implantation and annealing to thereby form a p + -type buried layer. A sacrificial layer 6a is formed (FIGS. 21 (a), 22 (a), 23 (a)),
The silicon oxide film 12 is removed by etching.

In this embodiment, the p + -type buried sacrificial layer 6a is formed on the single-crystal silicon substrate 11, but an n-type impurity such as phosphorus (P) is deposited and thermally diffused or ion-deposited. The n + type buried sacrificial layer may be formed by performing implantation and annealing.

The p + type buried sacrificial layer 6a is
It may extend from the entire outer edge of 1a to completely surround that portion, or may extend from a portion of the outer edge. When extending from the whole, the p + type buried sacrificial layer 6a
May have an annular shape, for example, the central portion 11a is circular, and the p + type buried sacrificial layer 6a is an annular portion between a concentric circle formed by a concentric circle and the central portion 1a, or a central portion. 11a is an inner square, and the p + type buried sacrificial layer 6a is formed by an outer square concentric with and in the same direction as the sacrificial layer 6a, and may be an annular portion between the inner square and the outer square. Further, the p + -type buried sacrificial layer 6a may be a portion formed between the circular central portion 11a and the outer square or a portion formed by a combination of the opposite, and further, a rectangle may be replaced with a rectangle instead of a square. Alternatively, an elliptical shape may be used.

Further, the p + type buried sacrificial layer 6a is
When extending from a portion of the outer edge of 1a, the p + -type buried sacrificial layer 6a has an equal angle (eg, 90 degrees) around the central portion 11a.
Ii) may be substantially long layers separated by a distance of 9);
In the case of 0 °, the p + -type buried sacrificial layer 6a has four beam forms opposing each other at the central part 11a (that is, a form of crossing at the central part). In other words, the p + type buried sacrificial layer 6a may extend radially from the central portion 11a, and the number thereof is not limited.

Next, on one main surface of the single-crystal silicon substrate 11, a thickness n corresponding to the bending portion 2 which bends when an acceleration is applied is applied.
Type epitaxial layer 13 and low pressure CVD on both sides
Silicon oxide film 15 by a method, pyrogenic oxidation or the like.
Is formed, and a protective film 16 such as a silicon nitride film is formed on the silicon oxide film 15 by a low pressure CVD method or the like, and silicon on a portion corresponding to the outer peripheral edge of the weight portion 3 on the two main surfaces of the single crystal silicon substrate 11 is formed. The opening 17 is formed by removing the oxide film 15 / protective film 16 by etching.
(B), FIG. 22 (b), FIG. 23 (b)).

In this embodiment, the silicon oxide film 15 / the protective film 16 are formed, but the present invention is not limited to this. Only the silicon oxide film 15 or the protective film 16 may be formed. . However, the silicon oxide film 15
By forming the protective film 16, the internal stress of each film can be compressed and pulled (or reversed) to reduce the warpage of the beam 2b.

Next, using the silicon oxide film 15 / the protective film 16 in which the opening 17 is formed as a mask, an alkaline etchant such as a potassium hydroxide (KOH) solution is used to form a p-type film.
The notch 5 is formed by performing anisotropic etching of the single crystal silicon substrate 11 until reaching the + -type buried sacrificial layer 6a.
Is formed (FIGS. 21C and 22C). Next, the metal wiring 20, the upper stopper bonding electrode 21, and the movable electrode 2 are formed on the protective film 16 on one main surface side of the single crystal silicon substrate 11.
2 and the electrode pad 23 are formed of gold (Au), Al, or the like (FIGS. 21D, 22D, and 23C). At this time,
The metal wiring 20, the upper stopper bonding electrode 21, the movable electrode 22, and the electrode pad 23 may be formed via a chromium (Cr) film or the like in order to enhance the adhesion to the underlying layer. In addition, metal wiring 20, upper stopper bonding electrode 21, movable electrode 2
2 and the electrode pad 23, a metal layer is formed by vapor deposition or sputtering, and the metal layer is patterned into a predetermined shape by using a photolithography technique and an etching technique. There is a method of forming a metal layer by performing evaporation or sputtering after forming a resist or the like other than where the 21, the movable electrode 22 and the electrode pad 23 are formed, and removing the resist or the like, a so-called lift-off method.

Next, the silicon oxide film 15 / protective film 16 on the two main surfaces of the single crystal silicon substrate 11 are removed by etching, and a lower stopper 9 having a concave portion 9a at a position corresponding to the weight 3 is formed by anodic bonding or the like. Reactive ion etching (RIE: Reactive Ion) is performed on the portion of the epitaxial layer 13 except for the portion that becomes the frame 1 and the bending portion 2 in the epitaxial layer 13.
Etching), removal by anisotropic etching or isotropic etching to form an etchant inlet 10 (FIGS. 21 (e), 22 (e), 23 (d)). The shape of the etchant introduction port 10 includes the shapes shown in FIGS. 4, 6 to 16, and the effect of each shape is shown in FIGS.
The same effects as those shown in FIGS.

Next, an etchant (50% hydrofluoric acid aqueous solution: 69% nitric acid aqueous solution: acetic acid = 1: 1 to 3: 8 by volume) composed of an acidic solution containing hydrofluoric acid or the like is introduced from the etchant inlet 10. , The p + -type buried sacrificial layer 6 a is removed by isotropic etching to form a cut groove 6, which has a frame-like frame 1 having an upper surface side and a lower surface side, a central portion 2 a and a beam portion 2 b, The beam portion 2b extends between at least a part of the inner peripheral side surface of the frame 1 and the central portion 2a, and has a bent portion 2 in which the beam portion 2b and the central portion 2a are integrally connected, and a neck portion at the central portion 2a. Weight part 3 suspended and supported via 3a
And a support member 4 that supports the lower surface side of the frame 1 and surrounds the outer peripheral edge of the weight portion 3 through the cutout portion 5 (FIGS. 21F and 22F).

Lastly, a desired portion of the silicon oxide film 15 / protective film 16 and the epitaxial layer 13 on one main surface side of the single crystal silicon substrate 11 is etched to form a slit 19, and the slit 19 is formed. The upper stopper 24 having the concave portion 24a at the position to be fixed and having the fixed electrode 25 formed so as to face the movable electrode 22 is bonded to the upper stopper bonding electrode 21 by anodic bonding or the like. here,
The upper stopper 24 includes a fixed electrode 25 and an electrode pad 2.
3 is formed with a contact hole 26 for making contact. (FIGS. 21 (g), 22 (g), 23)
(E)).

In this embodiment, the slit 1
9 can be formed simultaneously when the etchant inlet 10 and the cut groove 6 are formed, whereby the number of steps can be reduced. In the case where the etchant introduction port 10 is formed by etching away the portion of the epitaxial layer 13 excluding the frame 1 and the bent portion 2, for example, as shown in FIG. Side (the side on which the epitaxial layer 13 is formed).

As described above, in the present embodiment, the portion of the epitaxial layer 13 adjacent to the bent portion 2 is removed by etching to form the etchant introduction port 10, so that the etchant stagnation phenomenon is eliminated. Convection can be carried out quickly, and as a result, the p + -type buried sacrificial layer 6a and the epitaxial layer 1 are not affected by the liquid composition fluctuation due to the autocatalytic decomposition reaction of nitric acid in a locally closed space.
The bent portion 2 can be formed with high precision without deteriorating the selectivity of 3.

Further, conventionally, etching had to be performed in the longitudinal direction 18 of the beam 2b. However, in the present embodiment, etching can be performed from a direction perpendicular to the longitudinal direction 18 of the beam 2b. Can be shortened.

In this embodiment, the acceleration is detected by converting the change in the capacitance between the opposing electrodes (the movable electrode 22 and the fixed electrode 25) into an electric signal and detecting the acceleration. This eliminates the need for a process for forming the diffusion wirings 14 and the contact holes, thereby simplifying the process.

In the piezoresistor 7, the sensitivity changes with temperature. In the present embodiment, the sensitivity does not change with temperature, the sensitivity-temperature characteristics are improved, and the sensitivity is adjusted by adjusting the gap between the electrodes. Becomes possible.

If the etchant inlet 10 is formed simultaneously with the formation of the cut 5 by anisotropic etching, the etchant inlet 10 can be formed without increasing the number of steps.

If the width of the etchant inlet 10 is designed to automatically stop etching at the point where the etching reaches the p + type buried sacrificial layer 6a in consideration of the anisotropic etching characteristics, the etching proceeds too much. This can prevent the weight portion 3 from being etched, thereby reducing the sensitivity.

Further, in the present embodiment, the n-type is used as the conductivity type of single crystal silicon substrate 11 and epitaxial layer 13, but the present invention is not limited to this, and the opposite conductivity type may be used. .

In all of the above embodiments, the weight 3 is supported by the four beams 2b. However, the present invention is not limited to this. For example, eight beams, twelve beams The weight 3 may be supported by any number of beams 2b such as beams, 16 beams, and the like.

In all of the above embodiments,
The case of the p + type buried sacrificial layer 6a as the sacrificial layer has been described. However, the present invention is not limited to this. If the porous silicon layer is formed as the sacrificial layer, the single crystal silicon substrate 11 and the epitaxial layer 13 can be formed. About 150 compared to
The selectivity twice or more is obtained, and the bent portion 2 can be formed with high accuracy.

Here, as a method of forming the porous silicon layer, for example, as shown in FIG. 25, electrodes 28a and 28b
8b is connected to an external DC power supply (not shown).
Then, the electrolytic bath 27 is filled with an electrolytic solution 29 containing a strong acid such as a hydrofluoric acid (HF) solution, and between the electrodes 28a and 28b, one main surface is patterned into a predetermined shape by a substrate fixing jig 30. A single crystal silicon substrate 11 on which a silicon oxide film 12 is formed is disposed. And electrode 2
By applying a voltage to the electrodes 8a and 28b to use the electrode 28a as a cathode and the electrode 28b as an anode, fluorine ions are generated in the electrolytic solution 29, and the fluorine ions are converted into the p + type buried sacrificial layer 6.
is dissolved to form a porous silicon layer. Further, the single crystal silicon substrate 11 may be directly made porous by using an anodizing method.

Further, in all the above embodiments, the case where the etchant is introduced only from the etchant introduction port 10 has been described. However, the present invention is not limited to this, and both the cut portion 5 and the etchant introduction port 10 may be used. An etchant may be introduced from.

Further, in all the above-described embodiments, the p + type buried sacrificial layer 6a is removed by etching after the lower stopper 9 is bonded, and the slit 19 is formed. Not something.

In all of the above embodiments,
If the metal wiring is arranged so as to be rotationally symmetric with respect to a center line passing through the center of gravity of the weight portion 3 and perpendicular to the sensor, the metal wiring is formed evenly on the four beam portions 2b. In addition, it is possible to provide a structure in which thermal strain is uniformly applied and an offset hardly occurs.

[0095]

According to the first aspect of the present invention, there is provided a frame having an upper surface side and a lower surface side, and a bending portion having a plurality of beams and a central portion, wherein the beams are at least the inner edges of the frame. A bending portion extending between the portion and the center portion, the beam portion and the center portion being integrally connected, a weight portion suspended and supported by the center portion, and a lower surface side of the frame supported, A supporting member facing the side of the weight portion and the cut portion, and a cut groove formed between the weight portion and the beam portion,
A semiconductor acceleration sensor having an acceleration detection unit that detects acceleration by converting distortion generated in the bending portion into an electric signal, and the cut portion and the cut groove communicate with each other, and the weight portion and the support member are formed using a semiconductor substrate, flexures and frame is constructed using epitaxial layer provided on a semiconductor substrate, notches are formed by removing the sacrificial layer, the sacrificial layer of the epitaxial layer, small
At least , an etchant introduction port that reaches the sacrificial layer is provided at a position adjacent to the beam portion of the bending portion in the longitudinal direction, and is removed by introducing the etchant from the etchant introduction port, so that convection of the etchant also occurs in the cut groove. It has become possible to provide a semiconductor acceleration sensor capable of maintaining selectivity without being affected by a change in the composition of an etchant in a closed space and capable of accurately forming a bent portion.

According to a second aspect of the present invention, in the semiconductor acceleration sensor according to the first aspect, a piezoresistor whose resistance value changes due to bending is used as the acceleration detector, and a change in the resistance value of the piezoresistor is converted into an electric signal. By doing so, the acceleration is detected, so that the same effect as the first aspect of the invention can be obtained.

According to a third aspect of the present invention, in the semiconductor acceleration sensor according to the first aspect of the present invention, as the acceleration detecting section, electrodes which are arranged substantially opposite to each other are used, and the bending of the bending section and / or the weight section at the time of applying the acceleration is performed. Since the acceleration is detected by detecting the change in capacitance by the electrode, in addition to the effect of the invention described in claim 1, the sensitivity-temperature characteristics are improved, and the process is more efficient than when forming a piezo-resistance. Can be simplified, and the sensitivity setting can be easily adjusted by the gap between the electrodes.

According to a fourth aspect of the present invention, in the semiconductor acceleration sensor according to any one of the first to third aspects,
Since the high-concentration impurity layer is used as the sacrifice layer, the same effects as those of the first to third aspects of the invention can be obtained.

According to a fifth aspect of the present invention, in the semiconductor acceleration sensor according to any one of the first to third aspects,
Claim 1 because the porous silicon layer is used as the sacrificial layer.
In addition to the effects of the invention according to any one of claims 3 to 3,
Further, the bending portion can be formed with higher accuracy.

According to a sixth aspect of the present invention, in the semiconductor acceleration sensor according to any one of the first to fifth aspects,
Since the etchant introduction port was provided in the beam part of the bending part,
In addition to the effects of the invention according to any one of claims 1 to 5, it is possible to shorten the time required for etching and removing the sacrificial layer below the beam .

According to a seventh aspect of the present invention, in the semiconductor acceleration sensor according to the sixth aspect, the shape as viewed from the surface of the etchant inlet formed in the beam portion of the bending portion is four corners of a circle, an ellipse, or a rectangle. Has a rounded shape,
In addition to the effect of the invention described in claim 6, the mechanical strength against stress concentration can be improved.

According to an eighth aspect of the present invention, in the semiconductor acceleration sensor according to the seventh aspect, the etchant inlet is provided over the entire length of the beam portion of the bending portion in the longitudinal direction. In addition, the time required for etching and removing the sacrificial layer below the bent portion can be reduced.

According to a ninth aspect of the present invention, in the semiconductor acceleration sensor according to any one of the first to fifth aspects,
Since the etchant introduction port is provided in a portion of the epitaxial layer other than the bent portion and the frame formation portion, in addition to the effects of the invention according to any one of claims 1 to 5, the sacrificial layer is removed by etching. Time can be shortened.

According to a tenth aspect of the present invention, a step of forming a sacrificial layer at a predetermined position on one surface of a semiconductor substrate, a step of forming an epitaxial layer on a surface of the semiconductor substrate on which the sacrificial layer is formed, On the layer forming surface side, a step of forming an acceleration detection unit that detects acceleration by converting strain into an electric signal, and a portion corresponding to the outer peripheral edge of the weight portion of the semiconductor substrate is referred to as an epitaxial layer forming surface of the semiconductor substrate. A step of forming a notch reaching the sacrificial layer by anisotropic etching from a different surface side, a step of forming a cut groove by etching away the sacrificial layer, and a step of etching a desired portion of the epitaxial layer to remove a weight portion the method of manufacturing a semiconductor acceleration sensor having a step of forming a frame for supporting the the flexure flexures for suspending the support, of the epitaxial layer, small The phrase next to the longitudinal direction of the beam portion of the flexible portion is also
At a position in contact with, and forming an etchant introduction opening that reaches the sacrificial layer, since the addition of the step of removing the sacrificial layer by introducing an etchant from the etchant inlet, also enables convection etchant in cut grooves, closed space Thus, a method of manufacturing a semiconductor acceleration sensor capable of maintaining selectivity without forming a change in the composition of an etchant and forming a bent portion with high accuracy can be provided.

According to an eleventh aspect of the present invention, in the method of manufacturing a semiconductor acceleration sensor according to the tenth aspect, a piezoresistor whose resistance value changes due to bending is provided as an acceleration detecting portion at a portion corresponding to a bending portion of the epitaxial layer. Forming
Since the acceleration is detected by converting the change in the resistance value of the piezoresistor into an electric signal, the same effect as that of the tenth aspect can be obtained.

According to a twelfth aspect of the present invention, in the method for manufacturing a semiconductor acceleration sensor according to the tenth aspect, electrodes which are substantially opposed to each other are formed as an acceleration detecting portion, and a flexure portion and / or a weight portion when acceleration is applied. When the acceleration is detected by detecting the deflection of the electrode as a change in the capacitance by the electrode, in addition to the effect of the invention according to claim 10, the sensitivity temperature characteristics are improved and the piezo resistance is formed. Can simplify the process,
The sensitivity setting can be easily adjusted by the gap between the electrodes.

According to a thirteenth aspect of the present invention, in the method of manufacturing a semiconductor acceleration sensor according to any one of the tenth to twelfth aspects, a high concentration impurity layer is formed as a sacrificial layer by impurity diffusion. The same effect as the invention according to any one of claims 12 to 12 is obtained.

According to a fourteenth aspect of the present invention, in the method for manufacturing a semiconductor acceleration sensor according to any one of the tenth to twelfth aspects, a high-concentration impurity layer is formed as a sacrificial layer by impurity diffusion, and a high-concentration impurity layer is formed by anodization. (1) The porous silicon layer is formed by making the concentration impurity layer porous.
In addition to the effects of the invention described in any one of claims 0 to 12, the bending portion can be formed with higher accuracy.

According to a fifteenth aspect of the present invention, in the method of manufacturing a semiconductor acceleration sensor according to any one of the tenth to fourteenth aspects, the etchant introduction port is connected to the beam portion of the bending portion.
Claim 10 to Claim 1 because it is formed in the
In addition to the effects of the invention described in any one of 4 above, the time for etching and removing the sacrificial layer below the bent portion can be shortened.

According to a sixteenth aspect of the present invention, in the method for manufacturing a semiconductor acceleration sensor according to the fifteenth aspect, the beam of the bending portion is provided.
Shape seen from the formed etchant inlet surface in section is in the shape of oval or rectangular four rounded corners,
In addition, since it is formed over the entire length of the bent portion in the longitudinal direction, in addition to the effect of the invention according to claim 15, the mechanical strength against stress concentration is improved, and the etching time of the sacrificial layer below the bent portion is removed. Can be shortened.

According to a seventeenth aspect of the present invention, in the method for manufacturing a semiconductor acceleration sensor according to any one of the tenth to fourteenth aspects, the etchant introduction port is formed by removing a bent portion and a frame forming portion in the epitaxial layer. Since the sacrifice layer is formed at the bent portion, in addition to the effect of the invention according to any one of claims 10 to 14, the time for etching and removing the sacrifice layer can be shortened, and the bending of the bending portion is reduced. The step of etching the epitaxial layer so as to concentrate can be omitted.

The invention according to claim 18 is the method for manufacturing a semiconductor acceleration sensor according to any one of claims 10 to 17, wherein the width of the etchant introduction port is determined by considering the anisotropic etching characteristics. Claim 1 because the etchant inlet is formed by anisotropic etching, and is designed to stop automatically at the point where it reaches.
In addition to the effects of the invention described in any one of claims 0 to 17, a decrease in sensitivity due to etching of the weight portion can be prevented.

According to a nineteenth aspect of the present invention, in the method for manufacturing a semiconductor acceleration sensor according to any one of the tenth to eighteenth aspects, when the cut portion is formed by anisotropic etching, the etchant inlet is simultaneously formed. Since it is formed by anisotropic etching, the number of steps can be reduced in addition to the effect of the invention according to any one of claims 10 to 18.

According to a twentieth aspect of the present invention, in the method of manufacturing a semiconductor acceleration sensor according to any one of the tenth to seventeenth aspects, the etchant inlet is formed by RIE. In addition to the effects of the invention according to any one of the seventeenth aspects, the bending portion can be formed with high accuracy.

[Brief description of the drawings]

FIG. 1 is a schematic perspective view showing a partially broken state of a semiconductor acceleration sensor according to an embodiment of the present invention.

FIG. 2 is a schematic sectional view showing a manufacturing process of the semiconductor acceleration sensor according to the present embodiment.

FIG. 3 is a schematic perspective view showing a partially broken state of the manufacturing steps of FIGS. 2 (d) to 2 (h).

FIG. 4 is a schematic plan view showing a state of the semiconductor acceleration sensor according to the present embodiment as viewed from above.

FIGS. 5A and 5B are schematic cross-sectional views of the semiconductor acceleration sensor shown in the upper figure, in which FIG. 5A is a schematic cross-sectional view before removing a p + type buried sacrificial layer at AA ′, and FIG. FIG. 4C is a schematic cross-sectional view before removing a p + type buried sacrificial layer in FIG.
FIG. 4D is a schematic cross-sectional view after removing a + -type buried sacrificial layer, and FIG.
FIG. 14 is a schematic cross-sectional view after removing the p + type buried sacrificial layer at -B ′.

FIG. 6 is a schematic plan view showing a state of a semiconductor acceleration sensor according to another embodiment of the present invention as viewed from above.

FIG. 7 is a schematic plan view showing a state of a semiconductor acceleration sensor according to another embodiment of the present invention as viewed from above.

FIG. 8 is a schematic plan view showing a state of a semiconductor acceleration sensor according to another embodiment of the present invention as viewed from above.

FIG. 9 is a schematic plan view showing a state of a semiconductor acceleration sensor according to another embodiment of the present invention as viewed from above.

FIG. 10 is a schematic plan view showing a state of a semiconductor acceleration sensor according to another embodiment of the present invention as viewed from above.

FIG. 11 is a schematic plan view showing a state of a semiconductor acceleration sensor according to another embodiment of the present invention as viewed from above.

FIG. 12 is a schematic plan view showing a state of a semiconductor acceleration sensor according to another embodiment of the present invention as viewed from above.

FIG. 13 is a schematic plan view showing a state of a semiconductor acceleration sensor according to another embodiment of the present invention as viewed from above.

FIG. 14 is a schematic plan view showing a state of a semiconductor acceleration sensor according to another embodiment of the present invention as viewed from above.

FIG. 15 is a schematic plan view showing a state of a semiconductor acceleration sensor according to another embodiment of the present invention as viewed from above.

FIG. 16 is a schematic plan view showing a state of a semiconductor acceleration sensor according to another embodiment of the present invention as viewed from above.

FIG. 17 is a schematic perspective view showing a partially broken state of a semiconductor acceleration sensor according to another embodiment of the present invention.

FIG. 18 is a schematic perspective view showing a partially broken state of a semiconductor acceleration sensor according to another embodiment of the present invention.

FIG. 19 is a schematic perspective view showing a partially broken state of a semiconductor acceleration sensor according to another embodiment of the present invention.

FIG. 20 is a schematic plan view showing a state of the semiconductor acceleration sensor according to the present embodiment as viewed from above.

FIG. 21 is a schematic cross-sectional view showing a manufacturing step of AA ′ in FIG. 20 of the semiconductor acceleration sensor according to the present embodiment;

FIG. 22 is a schematic cross-sectional view showing a manufacturing step at BB ′ in FIG. 20 of the semiconductor acceleration sensor according to the present embodiment;

FIG. 23 is a schematic cross-sectional view showing a manufacturing step at CC ′ in FIG. 20 of the semiconductor acceleration sensor according to the present embodiment.

FIG. 24 is a schematic perspective view showing a partially broken state of a semiconductor acceleration sensor according to another embodiment of the present invention.

FIG. 25 is a schematic sectional view showing an apparatus for forming a porous silicon layer according to another embodiment of the present invention.

FIG. 26 is a schematic sectional view showing a manufacturing process of a semiconductor acceleration sensor according to a conventional example.

FIG. 27 is a schematic plan view showing a state of a semiconductor acceleration sensor according to a conventional example viewed from above.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Frame 2 Flexure part 2a Central part 2b Beam part 3 Weight part 3a Neck part 4 Support member 5 Cut part 6 Cut groove 6a p + type buried sacrificial layer 7 Piezoresistor 8 Metal wiring 9 Lower stopper 9a Concave part 10,10a, 10b etchant Inlet 11 Single crystal silicon substrate 11a Central portion 12 Silicon oxide film 12a Opening 13 Epitaxial layer 14 Diffusion wiring 15 Silicon oxide film 16 Protective film 17 Opening 18 Longitudinal direction 19 Slit 20 Metal wiring 21 Upper stopper junction electrode 22 Movable electrode 23 Electrode pad 24 Upper stopper 24a Depression 25 Fixed electrode 26 Contact hole 27 Electrolyte tank 28a, 28b Electrode 29 Electrolytic solution 30 Substrate fixing jig 31 p + type impurity layer

────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Takuro Ishida 1048 Kazuma Kadoma, Kadoma-shi, Osaka Matsushita Electric Works, Ltd. (56) References JP-A-8-236784 (JP, A) JP-A-5-102495 ( JP, A) JP-A-7-193543 (JP, A) JP-A-9-15257 (JP, A) JP-A-9-289327 (JP, A) JP-A 8-287082 (JP, A) JP Hei 9-167418 (JP, A) (58) Field surveyed (Int. Cl. ⁷ , DB name) H01L 29/84 G01L 5/16 G01P 15/125

Claims (20)

(57) [Claims] A frame having an upper surface side and a lower surface side;
A bent portion having a plurality of beam portions and a central portion, wherein the beam portion extends between at least a part of an inner edge portion of the frame and the central portion, and the beam portion and the central portion A flexure portion integrally connected, a weight portion suspended and supported by the central portion, a support member supporting the lower surface side of the frame, and an inner side surface facing the side surface of the weight portion and a cut portion. A notch groove formed between the weight portion and the beam portion, and an acceleration detection portion that detects an acceleration by converting distortion generated in the bending portion into an electric signal, and detects the acceleration. A semiconductor acceleration sensor communicating with a notch groove, wherein the weight portion and the support member are configured using a semiconductor substrate, and the bending portion and the frame use an epitaxial layer provided on the semiconductor substrate. Composed of Serial notches are formed by removing the sacrificial layer, the sacrificial layer, the epitaxial layer
At least in the longitudinal direction of the beam portion of the bending portion
At a position adjacent, the etchant inlet reaching the sacrificial layer provided, a semiconductor acceleration sensor is characterized in that so as to remove by introducing an etchant from the etchant inlet. 2. The method according to claim 1, wherein the acceleration detecting section uses a piezoresistor whose resistance value changes by bending, and detects acceleration by converting a change in the resistance value of the piezoresistor into an electric signal. The semiconductor acceleration sensor according to claim 1, wherein 3. An acceleration detecting section, wherein electrodes which are substantially opposed to each other are used, and the deflection of the bending section and / or the weight section at the time of acceleration application is detected as a change in capacitance by the electrodes to detect acceleration. 2. The semiconductor acceleration sensor according to claim 1, wherein the acceleration is measured. 4. The semiconductor acceleration sensor according to claim 1, wherein a high-concentration impurity layer is used as said sacrificial layer. 5. The semiconductor acceleration sensor according to claim 1, wherein a porous silicon layer is used as the sacrificial layer. 6. The method according to claim 6, wherein the etchant inlet is connected to the bending portion.
6. The semiconductor acceleration sensor according to claim 1 , wherein said semiconductor acceleration sensor is provided in said beam portion . 7. A shape as viewed from the surface of an etchant inlet formed in the beam portion of the bending portion is a shape in which four corners of a circle, an ellipse, or a rectangle are rounded. Item 7. A semiconductor acceleration sensor according to item 6. 8. The method according to claim 1, wherein the etchant introduction port is provided at the bending portion.
8. The semiconductor acceleration sensor according to claim 7, wherein the semiconductor acceleration sensor is provided over the entire length of the beam portion in the longitudinal direction. 9. The semiconductor acceleration according to claim 1, wherein the etchant introduction port is provided in a portion of the epitaxial layer excluding the bending portion and a frame forming portion. Sensor. 10. A sacrificial layer at a predetermined position on one surface of a semiconductor substrate.
Forming the sacrificial layer of the semiconductor substrate
Forming an epitaxial layer on the side of the
Distortion is applied to the side of the conductive substrate on which the epitaxial layer is formed.
Form acceleration detector to detect acceleration by converting to air signal
Corresponding to the outer peripheral edge of the weight portion of the semiconductor substrate.
Forming the epitaxial layer on the semiconductor substrate.
The sacrificial layer by anisotropic etching from the side different from the side
Forming a notch to reach the maximum, and etching the sacrificial layer.
Forming a cut groove by removing the notch;
A desired portion of the epitaxial layer is removed by etching.
A flexure for suspending and supporting the weight and a flexure for supporting the flexure;
And a step of forming a
In the manufacturing method, the epitaxial layerOf which,
A portion of the bending portion adjacent to the beam portion in the longitudinal direction
To,Forming an etchant inlet to reach the sacrificial layer
Process and introduction of etchant from the etchant introduction port
And removing the sacrifice layer.
Manufacturing method of a semiconductor acceleration sensor. 11. A piezoresistor whose resistance value changes due to bending is formed at a position corresponding to the bending portion of the epitaxial layer as the acceleration detection unit, and a change in the resistance value of the piezoresistance is converted into an electric signal. 11. The method for manufacturing a semiconductor acceleration sensor according to claim 10, wherein the acceleration is detected. 12. An electrode which is substantially opposed to each other and is formed as the acceleration detecting section, and the deflection of the bending section and / or the weight section at the time of application of acceleration is taken as a change in capacitance by the electrode, and the acceleration is detected. The method for manufacturing a semiconductor acceleration sensor according to claim 10, wherein the detection is performed. 13. A high-concentration impurity layer is formed as said sacrificial layer by impurity diffusion.
A method for manufacturing a semiconductor acceleration sensor according to claim 12. 14. A high-concentration impurity layer is formed as said sacrificial layer by impurity diffusion, and said high-concentration impurity layer is made porous by anodization to form a porous silicon layer. A method for manufacturing a semiconductor acceleration sensor according to claim 12. 15. The method for manufacturing a semiconductor acceleration sensor according to claim 10, wherein said etchant introduction port is formed in said beam portion of said bending portion. 16. A shape of the bending portion as viewed from the surface of an etchant introduction port formed in the beam portion , wherein the four corners of an ellipse or a rectangle are rounded, and the bending portion is provided.
The method of manufacturing a semiconductor acceleration sensor according to claim 15, wherein the semiconductor acceleration sensor is formed over the entire length of the beam portion in the longitudinal direction. 17. The semiconductor device according to claim 10, wherein the etchant inlet is formed in a portion of the epitaxial layer excluding the bent portion and a frame forming portion. A manufacturing method of the semiconductor acceleration sensor according to the above. 18. The width of the etchant inlet is designed so as to automatically stop at a point reaching the sacrificial layer in consideration of anisotropic etching characteristics, and the etchant inlet is formed by anisotropic etching. The method for manufacturing a semiconductor acceleration sensor according to any one of claims 10 to 17, wherein the method is performed. 19. The method according to claim 10, wherein, when forming the cut portion by anisotropic etching, the etchant inlet is formed by anisotropic etching at the same time. 3. The method for manufacturing a semiconductor acceleration sensor according to claim 1. 20. The method of manufacturing a semiconductor acceleration sensor according to claim 10, wherein said etchant introduction port is formed by RIE.