JPH0821774A - Semiconductor pressure sensor and its manufacture - Google Patents
Semiconductor pressure sensor and its manufactureInfo
- Publication number
- JPH0821774A JPH0821774A JP15567794A JP15567794A JPH0821774A JP H0821774 A JPH0821774 A JP H0821774A JP 15567794 A JP15567794 A JP 15567794A JP 15567794 A JP15567794 A JP 15567794A JP H0821774 A JPH0821774 A JP H0821774A
- Authority
- JP
- Japan
- Prior art keywords
- sensor substrate
- diaphragm
- supporting member
- sensor
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は半導体圧力センサに係
り、特にゼロ点温度特性に優れ、温度ヒステリシスが小
さく、低感度出力時にもＳ／Ｎ比の良い安定した信号が
得られるようにした半導体圧力センサ及びその製造方法
に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor pressure sensor, and more particularly to a semiconductor which is excellent in zero-point temperature characteristics, has a small temperature hysteresis, and is capable of obtaining a stable signal with a good S / N ratio even at low sensitivity output. The present invention relates to a pressure sensor and a manufacturing method thereof.
【０００２】[0002]
【従来の技術】本発明に最も近い公知例として、特開平
2−54137号公報がある。2. Description of the Related Art
There is a publication of 2-54137.
【０００３】従来から知られている半導体圧力センサ
は、その両面にかかる圧力差に応動するダイアフラムを
使用している。このダイアフラムは、その一方の表面に
配置された応力センサを持つ単結晶半導体基板からなる
センサ基板で構成される。そして、この目的に広く使用
される応力センサはピエゾ抵抗特性を示し、これによっ
て応力センサの抵抗はセンサ基板内の応力が変化する
時、センサによって経験される応力と共に変化する。ま
た、ダイアフラムを形成するために、センサ基板の他方
の表面内に円形空洞が形成される。そして、センサ基板
の他方の表面に支持部材を接合している。Conventionally known semiconductor pressure sensors use a diaphragm that responds to the pressure difference applied to both sides of the diaphragm. This diaphragm is composed of a sensor substrate made of a single crystal semiconductor substrate having a stress sensor arranged on one surface thereof. And, widely used stress sensors for this purpose exhibit piezoresistive properties such that the resistance of the stress sensor changes with the stress experienced by the sensor as the stress in the sensor substrate changes. Also, a circular cavity is formed in the other surface of the sensor substrate to form the diaphragm. Then, a support member is joined to the other surface of the sensor substrate.
【０００４】通常、円形の薄肉ダイアフラムを有する正
方形の単結晶半導体基板からなるセンサ基板が使用され
ている。これは、このような正方形のセンサ基板の多く
は、結晶ウエハの切断もしくはスライスで容易に得られ
ることによる。また、チップを支持部材に接合する場合
には、センサ基板と熱膨張係数の等しい材料を用いてい
るが、この支持部材もウエハに穴を開け、半導体（シリ
コン）ウエハと接着した後に切断して得ていることによ
る。そして、接着部分は肉厚部全体を支持部材と接合し
ている。Usually, a sensor substrate made of a square single crystal semiconductor substrate having a circular thin diaphragm is used. This is because many of such square sensor substrates are easily obtained by cutting or slicing a crystal wafer. Further, when the chip is bonded to the supporting member, a material having the same thermal expansion coefficient as that of the sensor substrate is used. This supporting member also has a hole formed in the wafer and is cut after being bonded to the semiconductor (silicon) wafer. It depends on what you have obtained. Then, the entire thick portion of the bonded portion is joined to the support member.
【０００５】しかしながら、従来の半導体圧力センサで
は、支持部材との接合領域の形状がダイアフラムの形状
と対称性を持たないことから、半導体圧力センサの雰囲
気温度が変化した際に、支持部材とセンサ基板との材料
の差によってダイアフラムに熱歪が発生する。また、応
力自身が発熱するための温度不均一が、センサ自身のオ
フセット電圧を変化させる。さらに、静圧(ダイアフラ
ムの両面で共通の圧力)が変化する際に、ゼロシフトと
いう内容の誤ったあるいは偽りの信号を発生させる。そ
して、このゼロシフト現象のために、高精度が要求され
る差圧力の測定では電気信号の補償が必要となる。特に
特開平2−54137号公報においては、このような、温度変
化時や静圧印加により発生する応力を緩和するため、セ
ンサ基板と支持部材と接合する面に、ダイアフラムを囲
みこれと同心の接合環帯を設けている。この接合環帯
は、フォトリソグラフィー技術により設けていて、接合
環帯以外の部分のシリコンを、１〜２μｍエッチングし
て接合部を高くしてある構成をとっている。However, in the conventional semiconductor pressure sensor, since the shape of the joining region with the support member does not have symmetry with the shape of the diaphragm, when the ambient temperature of the semiconductor pressure sensor changes, the support member and the sensor substrate. Due to the difference in the materials between and, thermal strain occurs in the diaphragm. In addition, the temperature non-uniformity due to heat generation of the stress itself changes the offset voltage of the sensor itself. Furthermore, when the static pressure (the pressure common to both sides of the diaphragm) changes, an erroneous or false signal with the content of zero shift is generated. Due to this zero shift phenomenon, the electric signal must be compensated for the measurement of the differential pressure that requires high accuracy. In particular, in Japanese Patent Laid-Open No. 54137/1990, in order to relieve such stress caused by temperature change or static pressure application, a diaphragm is enclosed on the surface where the sensor substrate and the support member are joined, and a concentric joint is formed. It has an annulus. This bonding ring is provided by a photolithography technique, and has a structure in which the silicon in the portion other than the bonding ring is etched by 1 to 2 μm to increase the bonding portion.
【０００６】[0006]
【発明が解決しようとする課題】上記従来の技術は、セ
ンサ基板に設ける接合環帯を形成するのに、接合環帯以
外の部分を数μｍエッチングし、接続部を高くする方法
をとっている。このような方法による場合、ダイアフラ
ムの加工とは別に接合環帯を形成する加工が必要にな
り、これだけで２つの工程をとることになる。また、２
つの工程を（２回のエッチング）施す場合、必ず１回の
加工で、センサ基板に段差ができるため、２回目の加工
を行う際には、フォトリソグラフィーの作業が困難にな
る。このように、上記従来技術には作業工程が増えると
共に、作業性が悪くなるというような問題があった。According to the above-mentioned conventional technique, in order to form the bonding loop provided on the sensor substrate, a portion other than the bonding loop is etched by several μm to raise the connection portion. . In the case of such a method, it is necessary to perform the process of forming the joining ring zone in addition to the process of the diaphragm, and this alone requires two steps. Also, 2
When two processes are performed (etching twice), a step is always formed in the sensor substrate by one process, so that the photolithography work becomes difficult when performing the second process. As described above, the above-mentioned conventional technique has a problem that the workability is deteriorated as the number of work steps is increased.
【０００７】本発明の目的は、センサ基板に円環状の支
持部を設けるのではなく、支持部材にエッチング等の方
法により円環状の支持部を設け、センサ基板と接合する
ことで、工程の削減を図り作業性を向上させ、原価低減
を図ること、また、静圧変化時の応力，温度変化時の応
力を緩和させることができると共に、ゼロシフト量の少
ないしかも高感度で高精度な差圧力測定を行うことが可
能で、信頼性の高い半導体圧力センサを提供すること、
さらにセンサ基板と支持部材をウエハ状態で形成しエッ
チング，陽極接合という工程をとることで、大量に安価
な半導体圧力センサを提供することである。An object of the present invention is not to provide an annular support portion on the sensor substrate, but to provide an annular support portion on the support member by a method such as etching and join the sensor substrate, thereby reducing the number of steps. It is possible to improve workability, reduce costs, reduce stress when static pressure changes and temperature change, and to measure differential pressure with small zero shift, high sensitivity and high accuracy. To provide a reliable and reliable semiconductor pressure sensor,
Further, it is to provide a large amount of inexpensive semiconductor pressure sensors by forming a sensor substrate and a supporting member in a wafer state and performing steps of etching and anodic bonding.
【０００８】[0008]
【課題を解決するための手段】上記目的を達成するため
に、支持部材には、エッチング、あるいは、サンドブラ
スト等により円環状の支持部を形成し、さらに貫通孔を
形成する。これをダイアフラムを形成したセンサ基板に
陽極接合する。この時、センサ基板は、支持部材に対し
て、円環状の支持部を介して保持されるようにしてお
く。また、圧力センサを大量に形成できるよう、センサ
基板，支持部材には、それぞれ複数個の感歪ゲージ素
子，貫通孔を設けウエハ状態に形成しておくようにする
ものである。In order to achieve the above object, an annular supporting portion is formed on a supporting member by etching, sandblasting or the like, and a through hole is further formed. This is anodically bonded to the sensor substrate on which the diaphragm is formed. At this time, the sensor substrate is held by the supporting member via the annular supporting portion. In order to form a large number of pressure sensors, the sensor substrate and the supporting member are provided with a plurality of strain sensitive gauge elements and through holes, respectively, and are formed in a wafer state.
【０００９】[0009]
【作用】本発明による半導体圧力センサにおいては、支
持部材に設ける円環状の支持部は、エッチング等により
容易に形成できるので、作業工程が削減でき作業性が向
上する。また、センサ基板は支持部材の円環状の支持部
に保持されているので、センサ基板と支持部材の接合部
分の面積の縮小化ならびに対称性により、温度や静圧の
変化に起因する応力の変化が、ダイアフラム上の応力セ
ンサへ与える影響が少なくなり、これによって温度や静
圧の変化に起因するゼロシフト信号は最小となる。In the semiconductor pressure sensor according to the present invention, since the annular support portion provided on the support member can be easily formed by etching or the like, the work steps can be reduced and the workability is improved. Further, since the sensor substrate is held by the annular supporting portion of the supporting member, the stress caused by the change in temperature or static pressure is reduced due to the reduction of the area of the joint portion between the sensor substrate and the supporting member and the symmetry. However, it has less effect on the stress sensor on the diaphragm, which minimizes the zero shift signal due to changes in temperature and static pressure.
【００１０】さらに、センサ基板，支持部材をウエハ状
態に形成することで一度に大量の圧力センサが形成でき
る。Further, by forming the sensor substrate and the supporting member in a wafer state, a large number of pressure sensors can be formed at one time.
【００１１】[0011]
【実施例】以下、本発明の実施例を図に基づいて説明す
る。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings.
【００１２】図１は本発明に係る半導体圧力センサの実
施例を示す正面図と下面図である。１は、感歪ゲージ素
子４を形成したセンサ基板、２は、後に圧力等入口とな
る貫通孔６を有した支持部材である。センサ基板１の表
面には、ダイアフラム３の周辺に感歪ゲージ素子４を４
個配設して、ダイアフラム３にかかる応力を感知するよ
うにしている。この感歪ゲージ素子４は、例えば、イオ
ン打込や熱拡散により、不純物をドーピングして形成す
る。また、この感歪ゲージ素子４はピエゾ抵抗特性を示
し、その抵抗はセンサが経験する応力によって変化す
る。さらに、感歪ゲージ素子４を配設した表面と反対側
の面内には、円形または多角形の空洞８を形成してい
る。FIG. 1 is a front view and a bottom view showing an embodiment of a semiconductor pressure sensor according to the present invention. Reference numeral 1 is a sensor substrate on which the strain sensitive gauge element 4 is formed, and 2 is a supporting member having a through hole 6 which becomes an inlet for pressure and the like later. On the surface of the sensor substrate 1, the strain sensitive gauge element 4 is provided around the diaphragm 3.
Individually arranged, the stress applied to the diaphragm 3 is sensed. The strain sensitive gauge element 4 is formed by doping impurities by, for example, ion implantation or thermal diffusion. Further, the strain sensitive gauge element 4 exhibits a piezoresistive characteristic, and its resistance changes depending on the stress experienced by the sensor. Further, a circular or polygonal cavity 8 is formed in the surface opposite to the surface on which the strain sensitive gauge element 4 is arranged.
【００１３】一方、支持部材２は、その中央部付近に円
形の圧力導入口となる貫通孔６を有しており、感歪ゲー
ジ素子４を配設した表面の反対側の面に接続している。
また、ダイアフラム３を囲むセンサ基板１の肉厚部９の
支持部材２と対向する面である接合領域には、ダイアフ
ラム３を囲みかつこれと同心の円環状の支持部５を設け
る。この円環状の支持部５は、エッチング、あるいは、
サンドブラスト等の方法により形成されるものである。
円環状の支持部５の形成においては、上記の方法により
容易に加工できるため、作業性が向上する効果を持つ。
ここで、センサ基板１は圧力センサとしての特性を維持
するために、支持部材２によって保持される。支持部材
２には、圧力センサ自身の特性に影響を与えないよう
に、センサ基板１と同じか、または、近似した熱膨張係
数を持つ材料で、なおかつ、センサ基板１と電気的絶縁
を保つために絶縁材料を用いる。これらのセンサ基板１
と、支持部材２を所定の位置に合わせ、陽極接合を行
う。接合されたセンサ基板１と支持部材２は、機械的に
強固に接合されるので、信頼性が向上する効果を持つ。
次に、上記のように構成した、センサ基板１，支持部材
２をウエハ状態に形成した場合の実施例について図２に
より説明する。On the other hand, the support member 2 has a through hole 6 serving as a circular pressure inlet near the center thereof, and is connected to the surface opposite to the surface on which the strain sensitive gauge element 4 is arranged. There is.
Further, a circular ring-shaped support portion 5 that surrounds the diaphragm 3 and is concentric with the diaphragm 3 is provided in a bonding region that is a surface of the thick portion 9 of the sensor substrate 1 that surrounds the diaphragm 3 and faces the support member 2. This annular support portion 5 is formed by etching or
It is formed by a method such as sandblasting.
In forming the annular support portion 5, the workability can be improved because it can be easily processed by the above method.
Here, the sensor substrate 1 is held by the support member 2 in order to maintain the characteristics of the pressure sensor. The supporting member 2 is made of a material having a thermal expansion coefficient that is the same as or similar to that of the sensor substrate 1 so as not to affect the characteristics of the pressure sensor itself, and to maintain electrical insulation from the sensor substrate 1. An insulating material is used for. These sensor boards 1
Then, the support member 2 is aligned with a predetermined position and anodic bonding is performed. Since the sensor substrate 1 and the support member 2 that are joined together are mechanically strongly joined together, they have the effect of improving reliability.
Next, an embodiment in which the sensor substrate 1 and the supporting member 2 configured as described above are formed in a wafer state will be described with reference to FIG.
【００１４】１１は感歪ゲージ素子４を複数個形成した
ウエハ、２２は貫通孔６と円環状の支持部５を複数個形
成したウエハである。同様にしてこれらも、エッチン
グ，陽極接合という工程をとる。センサ基板１がウエハ
状態になることで、センサ基板１のウエハ１１のエッチ
ングにより、一度に多数のダイアフラム３が容易に加工
できるので、さらに作業性が向上する。これを支持部材
２のウエハ２２と陽極接合すれば、均一な特性を持った
半導体圧力センサができる。後にダイサーやワイヤソー
などでさいの目状に切り出すことで、大量に複数個の圧
力センサを歩留りが高く安価に製作することができる。Reference numeral 11 is a wafer on which a plurality of strain sensitive gauge elements 4 are formed, and 22 is a wafer on which a plurality of through holes 6 and a plurality of annular supporting portions 5 are formed. Similarly, these also take steps of etching and anodic bonding. When the sensor substrate 1 is in the wafer state, a large number of diaphragms 3 can be easily processed at one time by etching the wafer 11 of the sensor substrate 1, so that workability is further improved. If this is anodically bonded to the wafer 22 of the supporting member 2, a semiconductor pressure sensor having uniform characteristics can be obtained. A large number of pressure sensors can be manufactured at a high yield and at a low cost by cutting them into dices with a dicer or a wire saw later.
【００１５】より詳細に説明すると、センサ基板１のウ
エハ１１の材料は、半導体プロセスを利用できるシリコ
ンを用いる。半導体プロセスの利点を生かし、センサ基
板１のウエハ１１の表面には、複数個の感歪ゲージ素子
４を設ける。その反対側の面には、ダイアフラム３を形
成するためのエッチングマスクを設ける。エッチングマ
スクはＳｉＯ2 膜や、ＳｉＮ膜などであらかじめ設けて
おく。この面の露出したＳｉをエッチングにより加工す
る。エッチング加工による場合、例えば、異方性エッチ
ングによれば、深い加工を高速にかつ高精度に実施でき
るので、ダイアフラム３の厚さのばらつきを押さえるこ
とが可能となり、歩留りの向上が図れる。また、等方性
エッチングによればダイアフラム３のコーナ部に丸みが
できるので、センサ耐圧向上を図れる効果を持つ。支持
部材２のウエハ２２の材料には、シリコンと近似した熱
膨張係数を持つ硼珪酸ガラスを用いる。これらの接合に
は陽極接合を用いる。陽極接合による場合、センサ基板
１のウエハ１１と支持部材２のウエハ２２を重ね合わせ
てセッティングし、センサ基板１のウエハ１１を直流高
電圧の正極、支持部材２のウエハ２２を同負極にそれぞ
れ接合する。これを高温雰囲気中、例えば、２５０〜４
００℃で、高電圧、例えば、５００〜1500Ｖの電圧を印
加すると、支持部材２のウエハ２２の材料である硼珪酸
ガラス中の酸化ナトリウム(Ｎａ2Ｏ）が、２Ｎａ+，Ｏ2
-に電離し、各々陰極，陽極に移動する。陽極側に移動し
たＯ2 -は、センサ基板１のウエハ１１の材料であるシリ
コン（Ｓｉ）と結合してシリコン酸化膜を生成し、セン
サ基板１のウエハ１１と支持部材２のウエハ２２を強固
に結合する。陰極側には、Ｎａが析出される。陽極接合
による場合、接合部は均一にしかも気密に接合できるの
で、信頼性の高い圧力センサを歩留り良く製作できる。More specifically, the material of the wafer 11 of the sensor substrate 1 is silicon which can be used in the semiconductor process. By utilizing the advantage of the semiconductor process, a plurality of strain sensitive gauge elements 4 are provided on the surface of the wafer 11 of the sensor substrate 1. An etching mask for forming the diaphragm 3 is provided on the opposite surface. The etching mask is previously provided with a SiO 2 film, a SiN film, or the like. The exposed Si of this surface is processed by etching. In the case of etching, for example, anisotropic etching allows deep processing to be performed at high speed and with high precision, so that it is possible to suppress variations in the thickness of the diaphragm 3 and improve the yield. Further, since the corners of the diaphragm 3 can be rounded by the isotropic etching, the pressure resistance of the sensor can be improved. Borosilicate glass having a thermal expansion coefficient similar to that of silicon is used as the material of the wafer 22 of the supporting member 2. Anodic bonding is used for these bonding. In the case of anodic bonding, the wafer 11 of the sensor substrate 1 and the wafer 22 of the supporting member 2 are set so as to be overlapped with each other, and the wafer 11 of the sensor substrate 1 is bonded to the positive electrode of DC high voltage and the wafer 22 of the supporting member 2 is bonded to the negative electrode, respectively. To do. In a high temperature atmosphere, for example, 250 to 4
When a high voltage, for example, a voltage of 500 to 1500 V is applied at 00 ° C., sodium oxide (Na 2 O) in the borosilicate glass, which is the material of the wafer 22 of the supporting member 2, becomes 2Na +, O 2
- ionized to move each cathode, the anode. The O 2 − that has moved to the anode side is combined with silicon (Si) that is the material of the wafer 11 of the sensor substrate 1 to form a silicon oxide film, and the wafer 11 of the sensor substrate 1 and the wafer 22 of the support member 2 are solidified. Bind to. Na is deposited on the cathode side. In the case of anodic bonding, since the bonded portion can be bonded uniformly and airtightly, a highly reliable pressure sensor can be manufactured with high yield.
【００１６】以上の如く構成した半導体圧力センサにお
いては、センサ基板１のダイアフラム３と支持部材２の
円環状の支持部５との接合領域が同心円で対称性が保た
れているため、温度や静圧の変化に起因する応力の変化
が、ダイアフラム３上の感歪ゲージ素子４へ与える影響
が少なくなり、これによって温度や静圧の変化に起因す
るゼロシフト信号を最小とすることができる。また、セ
ンサ基板１のダイアフラム３と支持部材２との接合面積
を、支持部材２側のパターニングで最適な面積にするこ
とができる。さらに、センサ基板１のダイアフラム３と
支持部材２との接合方法として、陽極接合という極めて
接着強度の強い方法を用いているため、僅かな接合面積
でもセンサ基板１を確実に固定することができる。さら
にまた、陽極接合がウエハ間で行われているため、個々
の半導体圧力センサの接合部は均一に接合され、ダイシ
ング後の個々の半導体圧力センサの接合部は全体に渡っ
て均一とすることができ、しかも気密封止の歩留りも良
くなる。In the semiconductor pressure sensor constructed as described above, since the joint region between the diaphragm 3 of the sensor substrate 1 and the annular support portion 5 of the support member 2 is concentric and symmetric, the temperature and static pressure are kept constant. A change in stress caused by a change in pressure has less influence on the strain-sensitive gauge element 4 on the diaphragm 3, whereby a zero shift signal caused by a change in temperature or static pressure can be minimized. Further, the bonding area between the diaphragm 3 of the sensor substrate 1 and the support member 2 can be set to an optimum area by patterning on the support member 2 side. Furthermore, since the method of bonding the diaphragm 3 of the sensor substrate 1 and the supporting member 2 to each other is anodic bonding, which has extremely high adhesive strength, the sensor substrate 1 can be reliably fixed even with a small bonding area. Furthermore, since the anodic bonding is performed between the wafers, the bonding parts of the individual semiconductor pressure sensors can be bonded uniformly, and the bonding parts of the individual semiconductor pressure sensors after dicing can be made uniform throughout. In addition, the yield of hermetic sealing is improved.
【００１７】すなわち、より詳細に説明すると、センサ
基板１と支持部材２の接合面積が小さいので、温度及び
静圧が変化した際に熱歪みが円形または多角形のダイア
フラム３にほとんど影響しないため、ゼロシフト量が減
少する。また、熱応力の発生も少なく、かつ、センサ基
板１と支持部材２の材料の差による静圧変化での応力発
生も接合部で緩和されるので、ゼロシフト特性も改善す
ることができる。さらに、過大圧による接着部の強度
は、ダイアフラム３が破壊するまで持つように面積を決
めておけば、ごく少ない接合面積、すなわちごく少ない
面積の円環状の支持部５を設けることができる。さらに
また、ウエハ間接合が可能であるので、アセンブリ工程
を簡略化することができる。以上のような工程は半導体
プロセス工程の利点を生かしたもので、信頼性の向上，
低価格化に寄与することができる。上述したように、本
実施例の半導体圧力センサでは、円形または多角形のダ
イアフラム３を囲むセンサ基板１の肉厚部９と対向する
面の支持部材２に、円環状の支持部５を形成し、センサ
基板１と支持部材２との接合部を少なくし、陽極接合に
よる接合をウエハ間で行うようにしているので、静圧変
化時の応力，温度変化時の応力を緩和させることがで
き、低コストでゼロシフト量の少ないかつ均一な特性を
持たせることが可能となる。さらに、従来難しい電気信
号の補償回路を必要としたゼロシフト特性が改善できる
ので、より高感度で高精度な差圧力測定を行うことが可
能となる。More specifically, since the bonding area between the sensor substrate 1 and the supporting member 2 is small, thermal strain hardly affects the circular or polygonal diaphragm 3 when the temperature and static pressure change. Zero shift amount decreases. Further, the generation of thermal stress is small, and the stress generation due to the change in static pressure due to the difference in material between the sensor substrate 1 and the supporting member 2 is alleviated at the joint portion, so that the zero shift characteristic can be improved. Furthermore, if the area of the adhesive portion due to excessive pressure is determined so that the diaphragm 3 has the strength until it breaks, a very small joining area, that is, an annular support portion 5 having a very small area can be provided. Furthermore, since wafer-to-wafer bonding is possible, the assembly process can be simplified. The above-mentioned steps take advantage of the semiconductor process steps to improve reliability,
It can contribute to lower prices. As described above, in the semiconductor pressure sensor of this embodiment, the annular support portion 5 is formed on the support member 2 on the surface facing the thick portion 9 of the sensor substrate 1 surrounding the circular or polygonal diaphragm 3. Since the bonding portion between the sensor substrate 1 and the supporting member 2 is reduced and the bonding by anodic bonding is performed between the wafers, the stress when the static pressure changes and the stress when the temperature changes can be relaxed. It is possible to provide uniform characteristics with a small amount of zero shift at low cost. Furthermore, since the zero shift characteristic which requires a compensating circuit for an electric signal, which has been difficult in the past, can be improved, it becomes possible to perform differential pressure measurement with higher sensitivity and higher accuracy.
【００１８】[0018]
【発明の効果】以上の説明で明らかなように、本発明に
よれば次の効果がある。As is apparent from the above description, the present invention has the following effects.
【００１９】支持部材に、センサ基板のダイアフラムを
囲む肉厚部と接合する面に、ダイアフラムを囲みかつこ
れと同心の円環状の支持部を設けるようにしたので、静
圧変化時の応力，温度変化時の応力を緩和させることが
できると共に、ゼロシフト量の少ないしかも高感度で高
精度な差圧力測定を行うことが可能で安価な極めて信頼
性の高い半導体圧力センサが提供できる。Since the support member is provided with an annular support portion that surrounds the diaphragm and is concentric with the diaphragm on the surface of the support substrate that is joined to the thick portion that surrounds the diaphragm of the sensor substrate, stress and temperature when the static pressure changes. It is possible to provide a semiconductor pressure sensor that is capable of relieving stress at the time of change, has a small amount of zero shift, can perform high-sensitivity and high-precision differential pressure measurement, and is inexpensive and extremely reliable.
【００２０】さらに、接合部は陽極接合によるので、接
合面は均一で気密な接合面になるため信頼性の高い圧力
センサが得られる。これら、センサ基板と支持部材をウ
エハ状態に形成しておけば、歩留り，信頼性の高い安価
な圧力センサが大量に製造できる。また、センサ基板と
支持部材の材質を熱膨張係数の近い材質を用いること
で、センサへの温度影響がさらに低減できる。Further, since the joining portion is formed by anodic joining, the joining surface is a uniform and airtight joining surface, so that a highly reliable pressure sensor can be obtained. If these sensor substrate and supporting member are formed in a wafer state, inexpensive and highly reliable yield sensors can be manufactured in large quantities. Further, by using materials having a thermal expansion coefficient close to each other for the sensor substrate and the supporting member, the temperature influence on the sensor can be further reduced.
【図１】本発明の一実施例を示す図である。FIG. 1 is a diagram showing an embodiment of the present invention.
【図２】本発明の他の実施例を示す図である。FIG. 2 is a diagram showing another embodiment of the present invention.
１…センサ基板、２…支持部材、３…ダイアフラム、４
…感歪ゲーシ素子、５…円環状の支持部、６…貫通孔、
７…ダイシングライン、８…空洞、９…肉厚部、１１，
２２…ウエハ。1 ... Sensor substrate, 2 ... Support member, 3 ... Diaphragm, 4
... strain-sensitive gate element, 5 ... annular support portion, 6 ... through hole,
7 ... Dicing line, 8 ... Cavity, 9 ... Thick part, 11,
22 ... Wafer.
Claims (3)
イアフラム薄肉部に形成した四角形のセンサ基板と、貫
通孔を有し、前記センサ基板を支持する支持部材とから
なる半導体圧力センサにおいて、前記支持部材に、前記
センサ基板との接合面に接合される円環状の支持部を設
けたことを特徴とする半導体圧力センサ。1. A semiconductor pressure sensor comprising a square sensor substrate having a strain-sensitive gauge element for detecting a differential pressure or pressure formed in a thin portion of a diaphragm, and a support member having a through hole and supporting the sensor substrate. A semiconductor pressure sensor, wherein the support member is provided with an annular support portion that is joined to a joint surface with the sensor substrate.
て、前記センサ基板として、感歪ゲージ素子を複数個形
成したウエハ，前記支持部材として、貫通孔と円環状の
支持部を複数個形成したウエハを用い一括して陽極接
合、その後に一括して切断して複数個の圧力センサを得
ることを特徴とする半導体圧力センサの製造方法。2. The semiconductor pressure sensor according to claim 1, wherein the sensor substrate is a wafer on which a plurality of strain sensitive gauge elements are formed, and the supporting member is a wafer on which a plurality of through holes and annular supporting portions are formed. A method for manufacturing a semiconductor pressure sensor, characterized in that a plurality of pressure sensors are obtained by collectively performing anodic bonding and then collectively cutting.
としてシリコン，前記支持部材の材質として硼珪酸ガラ
スを使用することを特徴とする半導体圧力センサ。3. The semiconductor pressure sensor according to claim 1, wherein silicon is used as a material of the sensor substrate and borosilicate glass is used as a material of the supporting member.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15567794A JPH0821774A (en) | 1994-07-07 | 1994-07-07 | Semiconductor pressure sensor and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15567794A JPH0821774A (en) | 1994-07-07 | 1994-07-07 | Semiconductor pressure sensor and its manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0821774A true JPH0821774A (en) | 1996-01-23 |
Family
ID=15611168
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15567794A Pending JPH0821774A (en) | 1994-07-07 | 1994-07-07 | Semiconductor pressure sensor and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0821774A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6951136B2 (en) | 2003-08-05 | 2005-10-04 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor pressure sensor device to detect micro pressure |
| JP2006170823A (en) * | 2004-12-16 | 2006-06-29 | Yokogawa Electric Corp | Semiconductor pressure sensor |
-
1994
- 1994-07-07 JP JP15567794A patent/JPH0821774A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6951136B2 (en) | 2003-08-05 | 2005-10-04 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor pressure sensor device to detect micro pressure |
| JP2006170823A (en) * | 2004-12-16 | 2006-06-29 | Yokogawa Electric Corp | Semiconductor pressure sensor |
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