JPS59139624A - 試料の加熱方法 - Google Patents
試料の加熱方法Info
- Publication number
- JPS59139624A JPS59139624A JP1405483A JP1405483A JPS59139624A JP S59139624 A JPS59139624 A JP S59139624A JP 1405483 A JP1405483 A JP 1405483A JP 1405483 A JP1405483 A JP 1405483A JP S59139624 A JPS59139624 A JP S59139624A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- sample
- along
- edge
- per unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1405483A JPS59139624A (ja) | 1983-01-31 | 1983-01-31 | 試料の加熱方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1405483A JPS59139624A (ja) | 1983-01-31 | 1983-01-31 | 試料の加熱方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59139624A true JPS59139624A (ja) | 1984-08-10 |
| JPH0454964B2 JPH0454964B2 (enrdf_load_stackoverflow) | 1992-09-01 |
Family
ID=11850370
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1405483A Granted JPS59139624A (ja) | 1983-01-31 | 1983-01-31 | 試料の加熱方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59139624A (enrdf_load_stackoverflow) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8314360B2 (en) * | 2005-09-26 | 2012-11-20 | Ultratech, Inc. | Apparatuses and methods for irradiating a substrate to avoid substrate edge damage |
| JP2018120891A (ja) * | 2017-01-23 | 2018-08-02 | パナソニックIpマネジメント株式会社 | 基材加熱装置および方法および電子デバイスの製造方法 |
| US11465141B2 (en) | 2016-09-23 | 2022-10-11 | Alveo Technologies, Inc. | Methods and compositions for detecting analytes |
| US11473128B2 (en) | 2014-10-06 | 2022-10-18 | Alveo Technologies, Inc. | System and method for detection of nucleic acids |
| US12275007B2 (en) | 2018-12-20 | 2025-04-15 | Alveo Technologies, Inc. | Handheld impedance-based diagnostic test system for detecting analytes |
-
1983
- 1983-01-31 JP JP1405483A patent/JPS59139624A/ja active Granted
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8314360B2 (en) * | 2005-09-26 | 2012-11-20 | Ultratech, Inc. | Apparatuses and methods for irradiating a substrate to avoid substrate edge damage |
| US11473128B2 (en) | 2014-10-06 | 2022-10-18 | Alveo Technologies, Inc. | System and method for detection of nucleic acids |
| US11465141B2 (en) | 2016-09-23 | 2022-10-11 | Alveo Technologies, Inc. | Methods and compositions for detecting analytes |
| JP2018120891A (ja) * | 2017-01-23 | 2018-08-02 | パナソニックIpマネジメント株式会社 | 基材加熱装置および方法および電子デバイスの製造方法 |
| US12275007B2 (en) | 2018-12-20 | 2025-04-15 | Alveo Technologies, Inc. | Handheld impedance-based diagnostic test system for detecting analytes |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0454964B2 (enrdf_load_stackoverflow) | 1992-09-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5336641A (en) | Rapid thermal annealing using thermally conductive overcoat | |
| JPS6412088B2 (enrdf_load_stackoverflow) | ||
| JPH0410216B2 (enrdf_load_stackoverflow) | ||
| US4773964A (en) | Process for the production of an oriented monocrystalline silicon film with localized defects on an insulating support | |
| US4578143A (en) | Method for forming a single crystal silicon layer | |
| JPS59139624A (ja) | 試料の加熱方法 | |
| JPH03280418A (ja) | 半導体膜の製造方法 | |
| US4737233A (en) | Method for making semiconductor crystal films | |
| JPH0419698B2 (enrdf_load_stackoverflow) | ||
| JPS61116820A (ja) | 半導体のアニ−ル方法 | |
| JPH027415A (ja) | Soi薄膜形成方法 | |
| JPH0420254B2 (enrdf_load_stackoverflow) | ||
| JPH0883766A (ja) | 非晶質シリコンの結晶化方法および薄膜トランジスタの製造方法 | |
| JPH025295B2 (enrdf_load_stackoverflow) | ||
| JPH07107894B2 (ja) | 多結晶薄膜基板のアニ−ル方法 | |
| JPS5983993A (ja) | 単結晶半導体層の成長方法 | |
| JP2695462B2 (ja) | 結晶性半導体膜及びその形成方法 | |
| JPS58139423A (ja) | ラテラルエピタキシヤル成長法 | |
| JPS59138329A (ja) | 絶縁基板上への単結晶薄膜形成方法 | |
| JPS59121823A (ja) | 単結晶シリコン膜形成法 | |
| JPS61145818A (ja) | 半導体薄膜の熱処理方法 | |
| JPH0453124A (ja) | 単結晶シリコン薄膜の製造方法およびその装置 | |
| JPH0351091B2 (enrdf_load_stackoverflow) | ||
| JPH08293466A (ja) | 半導体薄膜の製造方法 | |
| JPS5943815B2 (ja) | エピタキシヤル成長法 |