JPS59135783A - ジヨセフソン記憶装置 - Google Patents
ジヨセフソン記憶装置Info
- Publication number
- JPS59135783A JPS59135783A JP58008775A JP877583A JPS59135783A JP S59135783 A JPS59135783 A JP S59135783A JP 58008775 A JP58008775 A JP 58008775A JP 877583 A JP877583 A JP 877583A JP S59135783 A JPS59135783 A JP S59135783A
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- line
- insulating film
- superconductor
- disposed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002887 superconductor Substances 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 238000009413 insulation Methods 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims 1
- 230000010354 integration Effects 0.000 abstract description 3
- 238000004132 cross linking Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 15
- 239000010410 layer Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 6
- 238000003491 array Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 210000004556 brain Anatomy 0.000 description 2
- 210000004907 gland Anatomy 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 241000257465 Echinoidea Species 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000007596 consolidation process Methods 0.000 description 1
- 239000012792 core layer Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 229910000464 lead oxide Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910001281 superconducting alloy Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58008775A JPS59135783A (ja) | 1983-01-24 | 1983-01-24 | ジヨセフソン記憶装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58008775A JPS59135783A (ja) | 1983-01-24 | 1983-01-24 | ジヨセフソン記憶装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59135783A true JPS59135783A (ja) | 1984-08-04 |
| JPS6317346B2 JPS6317346B2 (enrdf_load_stackoverflow) | 1988-04-13 |
Family
ID=11702257
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58008775A Granted JPS59135783A (ja) | 1983-01-24 | 1983-01-24 | ジヨセフソン記憶装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59135783A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2022118464A1 (enrdf_load_stackoverflow) * | 2020-12-04 | 2022-06-09 | ||
| WO2022118463A1 (ja) * | 2020-12-04 | 2022-06-09 | 日本電気株式会社 | 量子デバイス及びその製造方法 |
-
1983
- 1983-01-24 JP JP58008775A patent/JPS59135783A/ja active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2022118464A1 (enrdf_load_stackoverflow) * | 2020-12-04 | 2022-06-09 | ||
| WO2022118464A1 (ja) * | 2020-12-04 | 2022-06-09 | 日本電気株式会社 | 量子デバイス及びその製造方法 |
| WO2022118463A1 (ja) * | 2020-12-04 | 2022-06-09 | 日本電気株式会社 | 量子デバイス及びその製造方法 |
| JPWO2022118463A1 (enrdf_load_stackoverflow) * | 2020-12-04 | 2022-06-09 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6317346B2 (enrdf_load_stackoverflow) | 1988-04-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4193125A (en) | Read only memory | |
| TW201232554A (en) | Memory device and method of operating the same | |
| TW201232548A (en) | Memory architecture of 3D array with improved uniformity of bit line capacitances | |
| JP4917205B2 (ja) | 電気的に安定化された薄膜高温超伝導体及びその製造方法 | |
| JP3382588B2 (ja) | 超伝導−通常−超伝導ジョセフソン接合中に通常層を作製するためのイオン注入の使用 | |
| JP3647323B2 (ja) | 半導体集積回路 | |
| JPS59135783A (ja) | ジヨセフソン記憶装置 | |
| JP5062508B2 (ja) | 超電導素子とその製造方法 | |
| JPS6215869A (ja) | ジヨセフソン素子の作製方法 | |
| JPH0834320B2 (ja) | 超電導素子 | |
| JPS6146081A (ja) | ジヨセフソン接合素子の製造方法 | |
| JPS5923120B2 (ja) | 多層構造によるジヨセフソン集積回路 | |
| US5304817A (en) | Superconductive circuit with film-layered josephson junction and process of fabrication thereof | |
| JP3564539B2 (ja) | 超伝導論理集積回路のパタンレイアウト方法 | |
| JP2504498B2 (ja) | 半導体装置 | |
| JPH0387063A (ja) | プレーナセル構造のメモリセルアレイ | |
| JP2994304B2 (ja) | 超伝導集積回路および超伝導集積回路の製造方法 | |
| JPS59188145A (ja) | 半導体装置 | |
| US6147360A (en) | Superconducting device and a method of manufacturing the same | |
| CN115666211A (zh) | 超导量子干涉仪及其制备方法 | |
| US3346829A (en) | Cryotron controlled storage cell | |
| JP2825374B2 (ja) | 超電導素子 | |
| JPS60147179A (ja) | 超電導多端子素子 | |
| JP2656364B2 (ja) | 超電導素子の製造方法 | |
| JP3202631B2 (ja) | 銅酸化物超伝導薄膜の製造方法 |