JPS59132645A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS59132645A
JPS59132645A JP58006915A JP691583A JPS59132645A JP S59132645 A JPS59132645 A JP S59132645A JP 58006915 A JP58006915 A JP 58006915A JP 691583 A JP691583 A JP 691583A JP S59132645 A JPS59132645 A JP S59132645A
Authority
JP
Japan
Prior art keywords
region
terminal
drain
thyristor
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58006915A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0441501B2 (enExample
Inventor
Teruyoshi Mihara
輝儀 三原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissan Motor Co Ltd
Original Assignee
Nissan Motor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Motor Co Ltd filed Critical Nissan Motor Co Ltd
Priority to JP58006915A priority Critical patent/JPS59132645A/ja
Publication of JPS59132645A publication Critical patent/JPS59132645A/ja
Publication of JPH0441501B2 publication Critical patent/JPH0441501B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs

Landscapes

  • Thyristors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP58006915A 1983-01-19 1983-01-19 半導体装置 Granted JPS59132645A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58006915A JPS59132645A (ja) 1983-01-19 1983-01-19 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58006915A JPS59132645A (ja) 1983-01-19 1983-01-19 半導体装置

Publications (2)

Publication Number Publication Date
JPS59132645A true JPS59132645A (ja) 1984-07-30
JPH0441501B2 JPH0441501B2 (enExample) 1992-07-08

Family

ID=11651525

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58006915A Granted JPS59132645A (ja) 1983-01-19 1983-01-19 半導体装置

Country Status (1)

Country Link
JP (1) JPS59132645A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02148767A (ja) * 1988-11-29 1990-06-07 Fuji Electric Co Ltd 伝導度変調型ｍｏｓｆｅｔ
FR2640445A1 (fr) * 1987-10-30 1990-06-15 Plessey Overseas Circuit de commutation d'un element inductif pour circuit de dephasage
JPH0427164A (ja) * 1990-04-12 1992-01-30 Mitsubishi Electric Corp 半導体装置およびその製造方法ならびに該装置を用いたフラッシュ制御装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2640445A1 (fr) * 1987-10-30 1990-06-15 Plessey Overseas Circuit de commutation d'un element inductif pour circuit de dephasage
JPH02148767A (ja) * 1988-11-29 1990-06-07 Fuji Electric Co Ltd 伝導度変調型ｍｏｓｆｅｔ
JPH0427164A (ja) * 1990-04-12 1992-01-30 Mitsubishi Electric Corp 半導体装置およびその製造方法ならびに該装置を用いたフラッシュ制御装置

Also Published As

Publication number Publication date
JPH0441501B2 (enExample) 1992-07-08

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