JPS59132492A - 半導体記憶装置 - Google Patents

半導体記憶装置

Info

Publication number
JPS59132492A
JPS59132492A JP57223678A JP22367882A JPS59132492A JP S59132492 A JPS59132492 A JP S59132492A JP 57223678 A JP57223678 A JP 57223678A JP 22367882 A JP22367882 A JP 22367882A JP S59132492 A JPS59132492 A JP S59132492A
Authority
JP
Japan
Prior art keywords
transistor
potential
bit line
gate
pull
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57223678A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0252358B2 (en:Method
Inventor
Hirohiko Mochizuki
望月　裕彦
Yoshihiro Takemae
義博 竹前
Tomio Nakano
中野　富男
Kimiaki Sato
公昭 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57223678A priority Critical patent/JPS59132492A/ja
Priority to US06/561,964 priority patent/US4601017A/en
Priority to EP83307728A priority patent/EP0114492B1/en
Priority to DE8383307728T priority patent/DE3379360D1/de
Publication of JPS59132492A publication Critical patent/JPS59132492A/ja
Publication of JPH0252358B2 publication Critical patent/JPH0252358B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4094—Bit-line management or control circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
JP57223678A 1982-12-22 1982-12-22 半導体記憶装置 Granted JPS59132492A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP57223678A JPS59132492A (ja) 1982-12-22 1982-12-22 半導体記憶装置
US06/561,964 US4601017A (en) 1982-12-22 1983-12-15 Semiconductor memory device having active pull-up circuits
EP83307728A EP0114492B1 (en) 1982-12-22 1983-12-19 Semiconductor memory device having active pull-up circuits
DE8383307728T DE3379360D1 (en) 1982-12-22 1983-12-19 Semiconductor memory device having active pull-up circuits

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57223678A JPS59132492A (ja) 1982-12-22 1982-12-22 半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS59132492A true JPS59132492A (ja) 1984-07-30
JPH0252358B2 JPH0252358B2 (en:Method) 1990-11-13

Family

ID=16801929

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57223678A Granted JPS59132492A (ja) 1982-12-22 1982-12-22 半導体記憶装置

Country Status (4)

Country Link
US (1) US4601017A (en:Method)
EP (1) EP0114492B1 (en:Method)
JP (1) JPS59132492A (en:Method)
DE (1) DE3379360D1 (en:Method)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6194296A (ja) * 1984-10-16 1986-05-13 Fujitsu Ltd 半導体記憶装置
JPS629590A (ja) * 1985-07-08 1987-01-17 Nec Corp 増幅回路

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6043296A (ja) * 1983-08-17 1985-03-07 Mitsubishi Electric Corp 半導体記憶装置
JPS61151898A (ja) * 1984-12-26 1986-07-10 Fujitsu Ltd 半導体記憶装置におけるワ−ド線ドライバ回路
EP0189908B1 (en) * 1985-01-30 1992-10-28 Nec Corporation Dynamic memory with improved arrangement for precharging bit lines
JPS61217993A (ja) * 1985-03-22 1986-09-27 Mitsubishi Electric Corp 半導体メモリ
JPS61239493A (ja) * 1985-04-05 1986-10-24 Fujitsu Ltd 半導体記憶装置
JPH0664907B2 (ja) * 1985-06-26 1994-08-22 株式会社日立製作所 ダイナミツク型ｒａｍ
US4740921A (en) * 1985-10-04 1988-04-26 Motorola, Inc. Precharge of a dram data line to an intermediate voltage
JPS62114190A (ja) * 1985-11-13 1987-05-25 Mitsubishi Electric Corp 半導体記憶装置
JPS62134894A (ja) * 1985-12-06 1987-06-17 Mitsubishi Electric Corp 半導体記憶装置
USRE34463E (en) * 1985-12-06 1993-11-30 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device with active pull up
US4701644A (en) * 1986-08-13 1987-10-20 Harris Corporation Low power sense amplifier
JPS6376193A (ja) * 1986-09-19 1988-04-06 Fujitsu Ltd 半導体記憶装置
JPS6376192A (ja) * 1986-09-19 1988-04-06 Fujitsu Ltd 半導体記憶装置
US4768167A (en) * 1986-09-30 1988-08-30 International Business Machines Corporation High speed CMOS latch with alternate data storage and test functions
US4804871A (en) * 1987-07-28 1989-02-14 Advanced Micro Devices, Inc. Bit-line isolated, CMOS sense amplifier
JP2537264B2 (ja) * 1988-04-13 1996-09-25 株式会社東芝 半導体記憶装置
JPH02198097A (ja) * 1989-01-25 1990-08-06 Nec Ic Microcomput Syst Ltd 半導体スタチックメモリ
EP0430614B1 (en) * 1989-12-01 1996-02-07 Matsushita Electronics Corporation A dynamic type semiconductor memory
US5304874A (en) * 1991-05-31 1994-04-19 Thunderbird Technologies, Inc. Differential latching inverter and random access memory using same
US5214317A (en) * 1992-05-04 1993-05-25 National Semiconductor Corporation CMOS to ECL translator with incorporated latch
KR950014256B1 (ko) * 1993-04-06 1995-11-23 삼성전자주식회사 낮은 전원전압을 사용하는 반도체 메모리장치
US5602785A (en) * 1995-12-13 1997-02-11 Micron Technology, Inc. P-channel sense amplifier pull-up circuit with a timed pulse for use in DRAM memories having non-bootstrapped word lines
US5933043A (en) * 1996-10-22 1999-08-03 Kabushiki Kaisha Toshiba High speed level shift circuit
US6111802A (en) * 1997-05-19 2000-08-29 Fujitsu Limited Semiconductor memory device
US6147893A (en) * 1999-01-27 2000-11-14 Vlsi Technology, Inc. Programmable read only memory with high speed differential sensing at low operating voltage
US10318903B2 (en) 2016-05-06 2019-06-11 General Electric Company Constrained cash computing system to optimally schedule aircraft repair capacity with closed loop dynamic physical state and asset utilization attainment control

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57152698U (en:Method) * 1981-03-17 1982-09-25
JPS5942693A (ja) * 1982-09-01 1984-03-09 Nec Corp センスアンプ回路

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4028557A (en) * 1976-05-21 1977-06-07 Bell Telephone Laboratories, Incorporated Dynamic sense-refresh detector amplifier
JPS53120238A (en) * 1977-03-29 1978-10-20 Mitsubishi Electric Corp Semiconductor amplifier
US4262342A (en) * 1979-06-28 1981-04-14 Burroughs Corporation Charge restore circuit for semiconductor memories
JPS5730192A (en) * 1980-07-29 1982-02-18 Fujitsu Ltd Sense amplifying circuit
JPS5894189A (ja) * 1981-11-27 1983-06-04 Fujitsu Ltd ダイナミツク型半導体記憶装置
JPS5891594A (ja) * 1981-11-27 1983-05-31 Fujitsu Ltd ダイナミツク型半導体記憶装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57152698U (en:Method) * 1981-03-17 1982-09-25
JPS5942693A (ja) * 1982-09-01 1984-03-09 Nec Corp センスアンプ回路

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6194296A (ja) * 1984-10-16 1986-05-13 Fujitsu Ltd 半導体記憶装置
JPS629590A (ja) * 1985-07-08 1987-01-17 Nec Corp 増幅回路

Also Published As

Publication number Publication date
EP0114492A3 (en) 1986-09-10
EP0114492B1 (en) 1989-03-08
EP0114492A2 (en) 1984-08-01
JPH0252358B2 (en:Method) 1990-11-13
DE3379360D1 (en) 1989-04-13
US4601017A (en) 1986-07-15

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